Resonant Cavity Far Infrared Photo-detector based on Self-Assembled InAs/GaAs Quantum Dots The far infrared region (10-1000

m) of electromagnetic spectrum is of particular interest for various applications include studies of lattice vibrations in crystals, anti-ferromagnetic resonance, energy gap measurements in superconductors and imaging through fog and imaging through dust. Based on the above requirements, a great interest has arisen in developing compact, portable, far infrared detectors. In this paper, we purpose and validate a novel design for far infrared resonant cavity enhanced quantum dot photo-detector based on intervalanceband linear and nonlinear absorption process in self assembled InAs/ GaAs quantum dots (QDs). The quantum dot photodiode (QDP) structure consists of QDs active layers inserted into two distributed Bragg reflectors (DBRs), DBR mirrors consist of multiple pairs of GaAs/AlGaAs quarter-wave stacks. Resonant cavity enhanced the quantum efficiency due to the multiple reflections between the mirrors and increases the effective absorption length of QDP. Self assembled InAs/GaAs QD is modelled by anisotropic parabolic potential along x-y plane and finite well potential along growth (z-direction). Luttinger Kohn Hamiltonian in the presence of strain is numerically solved to calculate the Eigen energies, Eigen vectors and wave functions of the QDs. Calculated energy levels and wave functions are subsequently used to calculate dipole matrix elements, absorption coefficients and quantum efficiency of resonant QDP. Quantum efficiency is calculated as a function of wavelength and as a function of distance between two mirrors. Large valence band offsets between InAs and GaAs barrier reduces thermionic emission, decrease in thermionic emission results in low value of dark current.