SILVACO LAB ASSIGNMENT 1

SUBMITTED BY:M.CHANDRAKANTH(EE12M1022) P.SREEVIVAS REDDY(EE12P1007)

CODE FOR PN DIODE WITH P TYPE DOSE OF 1E15:

go athena # line x loc=0.00 spac=10 line x loc=25 spac=1 line x loc=75 spac=0.1 line x loc=125 spac=1 line x loc=200 spac=10 # line y loc=0.00 spac=1 line y loc=1 spac=0.1 line y loc=5 spac=10 # ntype wafer init silicon c.phosphor=1.0e15 orientation=100 two.d # deposition of oxide deposit oxide thick=0.5 # pregion etch oxide start x=25 y=-0.5 etch cont x=25 y=0 etch cont x=75 y=0 etch done x=75 y=-0.5 # pdiffusion diffus time=42.22 temp=1296.72 nitro press=1.00 c.boron=1e15 # extract name="pregion depth" xj material="Silicon" mat.occno=1 x.val=50 \ junc.occno=1 # etch oxide all # deposition of oxy nitride deposit oxynitride thick=0.2 # for metal p etch oxynitride start x=25 y=0.1 etch cont x=50 y=-0.2 etch cont x=175 y=-0.2 etch done x=200 y=0.1

# for metal n etch oxynitride etch cont x=175 etch cont x=200 etch done x=200

start x=175 y=0.1 y=-0.2 y=-0.2 y=0.1

# deposition of al deposit aluminum thick=0.2 # for metal n etch aluminum above p1.y=-0.2 extract name="pregion depth" xj material="Silicon" mat.occno=1 x.val=50\ junc.occno=1 tonyplot stop electrode name=anode x=40 electrode name=cathode x=190

go atlas # set material models models cvt srh print numcarr=2 method gummel newton solve init solve vcathode=0 outf=solve_tmp1 #load in temporary files and ramp Vds load infile=solve_tmp1 log outfile=question1.log solve name=anode vanode=-2 vfinal=3.3 vstep=0.05 tonyplot question1.log -set question1_log.set extract name="CUTIN VOLTAGE" xintercept(maxslope(curve(v."anode",i."anode")))

stop

A)SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=25 AND 50,175,200 SHOWING 1UM PDEPTH,P-DOSE=1E15

CALCULATIONS:

JUNCTION DEPTH=1.14UM CUTIN VOLTAGE=1.43V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 0.64um DIFFUSION TIME:42.67MIN DIFFUSION TEMP:1296 PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 1UM P-DEPTH,P-DOSE=1E15
B)

CALCULATIONS:

JUNCTION DEPTH=1.14UM CUTIN VOLTAGE=1.234V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 0.64 DIFFUSION TIME:42.67MIN DIFFUSION TEMP:1296 PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=25 AND 50,175,200 SHOWING 1UM P-DEPTH,P-DOSE=1E16
C)

CALCULATIONS:

JUNCTION DEPTH=1.0183UM CUTIN VOLTAGE=1.43V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 0.0854UM DIFFUSION TIME:37.67MIN DIFFUSION TEMP:1130 PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 1UM P-DEPTH,P-DOSE=1E16
D)

CALCULATIONS:

JUNCTION DEPTH=1.01253UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.19E-12 YMIN= 0.0854UM DIFFUSION TIME:37.67MIN DIFFUSION TEMP:1130 PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 1UM P-DEPTH,P-DOSE=1E17
E)

CALCULATIONS:

JUNCTION DEPTH=1.1253UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 9.51NM DIFFUSION TIME:36.67MIN DIFFUSION TEMP:1144 PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=25 AND 50,175,200 SHOWING 1UM PDEPTH,P-DOSE=1E17
F)

CALCULATIONS:

JUNCTION DEPTH=1.1253UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 9.51NM DIFFUSION TIME:36.67MIN DIFFUSION TEMP:1144 PRESSURE:1ATM

NOTE:PLOTS OF I-V CHARECTERISTICS AND REVERSE SATURATION CURRENTS ARE SAME AS ABOVE WITH METAL CONTACTS AT 37.5 AND 50,100 AND125

SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 2*YMIN(YMIN=0.645UM) P-DEPTH,P-DOSE=1E15
G)

CALCULATIONS:

JUNCTION DEPTH=1.2UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.1958E-12 YMIN= 0.645UM

DIFFUSION TIME:44MIN DIFFUSION TEMP:1315 PRESSURE:1ATM

I-V CURVE:

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)