APM9932/C

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

N-Channel 20V/15A, RDS(ON)=12m(typ.) @ VGS=10V RDS(ON)=17m(typ.) @ VGS=4.5V

Pin Description
APM9932
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
S1 G1 S2 G2

APM9932C
1 2 3 4 8 7 6 5 D D D D

P-Channel -20V/-6A, RDS(ON)=30m(typ.) @ VGS=-4.5V RDS(ON)=45m(typ.) @ VGS=-2.5V

SO-8
D1 D1

SO-8
D

Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
G1 G1 G2

Applications

Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G2

S1

S1

S2

N-Channel MOSFET
S2

N- and P-Channel MOSFET

D2

D2

P-Channel MOSFET

Ordering and Marking Information

APM9932/C
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel

APM9932/C K :

APM9932/C XXXXX

XXXXX - Date Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw

APM9932/C
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM PD TJ TSTG RjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed TA=25C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient TA=100C

(TA = 25C unless otherwise noted)

N-Channel 20 16 15 30 2.5 1.0 150 -55 to 150 50 P-Channel -20 12 -6 -10 2.5 W 1.0 C C C/W A V Unit

* Surface Mounted on FR4 Board, t 10 sec.

Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter

(TA = 25C unless otherwise noted)

APM9932/C Min. N-Ch 20 -20 1 -1 0.6 -0.6 1.3 -1.3 100 100 12 17 P-Ch N-Ch P-Ch 0.6 -0.6 30 45 18 27 42 60 1.3 -1.3 V m nA Typ. Max.

Test Condition

Unit

VGS=0V , IDS=250A VDS=18V , VGS=0V VDS=-18V , VGS=0V VDS=VGS , IDS=250A VDS=VGS , IDS=-250A VGS=16V , VDS=0V VGS=12V , VDS=0V VGS=10V , IDS=9A VGS=4.5V , IDS=7A VGS=-4.5V , IDS=-6A VGS=-2.5V , IDS=-5A ISD=5A , VGS=0V ISD=-2A , VGS=0V

P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch

V A V

Gate Leakage Current

RDS(ON)a

Drain-Source On-state Resistance

VSDa

Diode Forward Voltage

Notes
a

: Pulse test ; pulse width 300s, duty cycle 2%

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Electrical Characteristics (Cont.)
Symbol Dynamica Qg Qgs Qgd td(ON) Total Gate Charge N-Channel VDS=10V , IDS= 6A Gate-Source Charge VGS=4.5V P-Channel VDS=-4V , IDS=-1A VGS=-4.5V N-Channel VDD=10V , IDS=1A , Tr Turn-on Rise Time VGEN=4.5V , RG=10 P-Channel td(OFF) Tf Ciss Coss Crss Turn-off Delay Time VDD=-4V , IDS=-1A , VGEN=-4.5V , RG=10 Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VGS=0V , VDS=15V Frequency=1.0MHz P-Channel VGS=0V , VDS=-4V Frequency=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 14 19 5 4.1 2.8 1.6 6 23 5 45 16 45 5 32 1225 1400 330 520 220 320 pF 12 45 10 80 40 90 20 55 ns 22 25 nC Parameter

(TA = 25C unless otherwise noted)

APM9932/C Min. Typ. Max.

Test Condition

Unit

Gate-Drain Charge

Turn-on Delay Time

Notes
a

: Guaranteed by design, not subject to production testing

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Typical Characteristics
N-Channel

Output Characteristics
20
VGS=3,4,5,6,7,8,9,10V

Transfer Characteristics
20

ID-Drain Current (A)

ID-Drain Current (A)

16

VGS=2.5V

15

12

10

8
V GS=2V

TJ=125C

5
TJ=25C TJ=-55C

10

0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50
IDS=250uA

On-Resistance vs. Drain Current

0.030

VGS(th)-Threshold Voltage (V) (Normalized)

1.00 0.75 0.50 0.25 0.00 -50

RDS(ON)-On-Resistance ()

1.25

0.025 0.020 0.015 0.010 0.005 0.000

VGS=4.5V

V GS=10V

-25

25

50

75

100 125 150

12

16

20

Tj - Junction Temperature (C)

ID - Drain Current (A)

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Typical Characteristics (Cont.)
N-Channel

On-Resistance vs. Gate-to-Source Voltage

0.16
ID=15A

On-Resistance vs. Junction Temperature

2.0
VGS=10V ID=15A

RDS(ON)-On-Resistance ()

0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 9 10

RDS(ON)-On-Resistance () (Normalized)

0.14

1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50

-25

25

50

75

100 125

150

VGS - Gate-to-Source Voltage (V)

TJ - Junction Temperature (C)

Gate Charge
10
V DS=10V ID=6A

Capacitance
1800
Frequency=1MHz

VGS-Gate-Source Voltage (V)

1500

Capacitance (pF)

Ciss

1200 900 600

Coss

2 300

Crss

10

15

20

25

30

10

15

20

QG - Gate Charge (nC)

VDS - Drain-to-Source Voltage (V)

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Typical Characteristics (Cont.)
N-Channel

Source-Drain Diode Forward Voltage

20 10 80 70 60

Single Pulse Power

IS-Source Current (A)

Power (W)

50 40 30 20 10

TJ=150C

TJ=25C

0.1 0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 0.01

0.1

10

30

VSD -Source-to-Drain Voltage (V)

Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient Thermal Impedance

1
Duty Cycle=0.5

D=0.2 D=0.1

0.1
D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA SINGLE PULSE

D=0.02

0.01 1E-4

1E-3

0.01

0.1

10

30

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Typical Characteristics
P-Channel

Output Characteristics
10
-VGS=2,3,4,5,6,7,8,9,10V

Transfer Characteristics
10

-ID-Drain Current (A)

6
-VGS=2V

-ID-Drain Current (A)

4
TJ=125C

2
TJ=25C TJ=-55C

0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

-VDS - Drain-to-Source Voltage (V)

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50
-IDS=250uA

On-Resistance vs. Drain Current

0.08

-VGS(th)-Threshold Voltage (V) (Normalized)

1.25 1.00 0.75 0.50 0.25 0.00 -50

RDS(ON)-On-Resistance ()

0.07 0.06
-VGS=2.5V

0.05 0.04
-VGS=4.5V

0.03 0.02 0.01

-25

25

50

75

100 125 150

0.00

10

Tj - Junction Temperature (C)

-ID - Drain Current (A)

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Typical Characteristics (Cont.)
P-Channel

On-Resistance vs. Gate-to-Source Voltage

0.12
-ID=6A

On-Resistance vs. Junction Temperature

1.8
-VGS=4.5V -ID=6A

RDS(ON)-On-Resistance ()

0.10 0.08 0.06 0.04 0.02 0.00

RDS(ON)-On-Resistance () (Normalized)

1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50

10

-25

25

50

75

100 125

150

-VGS - Gate-to-Source Voltage (V)

TJ - Junction Temperature (C)

Gate Charge
5
-VDS=4V -ID=1A

Capacitance
2000
Frequency=1MHz

-VGS-Gate-Source Voltage (V)

1600

Capacitance (pF)

Ciss

1200

800
Coss

400

Crss

12

16

20

10

QG - Gate Charge (nC)

-VDS - Drain-to-Source Voltage (V)

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Typical Characteristics (Cont.)
P-Channel

Source-Drain Diode Forward Voltage

10 80

Single Pulse Power

-IS-Source Current (A)

60 1
TJ=150C TJ=25C

Power (W)
1.2 1.4

40

0.1

20

0.0

0.2

0.4

0.6

0.8

1.0

0 0.01

0.1

10

30

-VSD -Source-to-Drain Voltage (V)

Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient Thermal Impedance

1
Duty Cycle=0.5

D=0.2 D=0.1

0.1
D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA SINGLE PULSE

D=0.02

0.01 1E-4

1E-3

0.01

0.1

10

30

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

www.anpec.com.tw

APM9932/C
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)

e1 D

e2

A1

1 L

0.004max.

Dim A A1 D E H L e1 e2 1

Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013

0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

10

www.anpec.com.tw

APM9932/C
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

temperature

Peak temperature

183C Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.

60 seconds 215-219C or 235 +5/-0C 10 C /second max.

Package Reflow Conditions

pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
www.anpec.com.tw

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

11

APM9932/C
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles

Carrier Tape & Reel Dimensions

t E Po P P1 D

F W

Bo

Ao

D1 T2

Ko

J C A B

T1

Application

A 330 1

B 62 +1.5 D

C 12.75+ 0.15 D1

J 2 0.5 Po

T1 12.4 0.2 P1 2.0 0.1

T2 2 0.2 Ao 6.4 0.1

W 12 0. 3 Bo 5.2 0. 1

P 8 0.1 Ko

E 1.750.1 t

SOP- 8

F 5.5 1

1.55 +0.1 1.55+ 0.25 4.0 0.1

2.1 0.1 0.30.013

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

12

www.anpec.com.tw

APM9932/C
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500

Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369

Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002

13

www.anpec.com.tw