7MBR10SA120

IGBT MODULE (S series) 1200V / 10A / PIM

IGBT Modules

Features
Low VCE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit

Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current ICP Symbol VCES VGES IC Condition

Continuous 1ms

Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake

t No

nd e mm o c e r
ICP PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso -IC PC VCES VGES IC 1 device Continuous 1ms 1 device

ew n for
Tc=25C Tc=80C Tc=25C Tc=80C Tc=25C Tc=80C Tc=25C Tc=80C

de
Rat ing 1200 20 15 10 30 20 10 75 1200 20 15 10 30 20 75 1200 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 3.5 *1

n sig
Unit V V A A A W V V A A W V V A A A 2s C C V Nm

Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive)

Converter

50Hz/60Hz sine wave Tj=150C, 10ms half sine wave

Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque

AC : 1 minute

*1 Recommendable value : 2.5 to 3.5 Nm (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.

IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=10mA VGE=15V, Ic=10A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=10A VGE=15V RG=120 IF=10A chip terminal Min.

7MBR10SA120
Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.15 2.6 1200 0.35 0.25 0.1 0.45 0.08 2.3 2.35 1.2 0.6 1.0 0.3 V 3.2 0.35 1.0 0.2 2.6 1.2 0.6 1.0 0.3 1.0 s mA A V s Unit mA A V V pF s

Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value

Thermal resistance Characteristics

Item

Thermal resistance ( 1 device )

Contact thermal resistance

N
*

ot

nd e mm
Symbol Condition

for

IF=10A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=10A, VGE=15V chip terminal VCC=600V IC=10A VGE=15V RG=120 VR=1200V IF=10A chip terminal VR=1600V T=25C T=100C T=25/50C

2.1 2.2 0.35 0.25 0.45 0.08 1.1 1.2

Converter

mA V mA K

de
w ne
Min. 465 3305

5000 495 3375

Thermistor

sig

n.

1.5 1.0

520 3450

o c e r

Characteristics Typ. Max. 1.67 2.78 1.67 1.85 0.05

Unit

Rth(j-c)

Rth(c-f)

Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound

C/W

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

[Converter] 21(P) [B ra k e ] 2 2 (P 1 ) [In v er ter ]

[T h e rm is to r]

8
2 0 (G u) 1 8 (G v) 1 6 (G w )

1(R)

2(S)

3(T) 7 (B )

1 9 (E u ) 4 (U )

1 7 (E v ) 5 (V )

1 5 (E w ) 6 (W )

1 4 (G b)

1 3 (G x)

1 2 (G y)

1 1 (G z) 1 0 (E n )

23(N)

2 4 (N 1 )

IGBT Modules
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage
25

7MBR10SA120

[ Inverter ] Collector current vs. Collector-Emitter voltage

25

Tj= 25 C (typ.)

Tj= 125 C (typ.)

VGE= 20V 20

15V 12V 20

15V VGE= 20V 12V

Collector current : Ic [ A ]

15 10V 10

Collector current : Ic [ A ]

15 10V

10

5 8V 8V

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)

25 10

[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)

o

Tj= 25 C 20

Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

15

10

0 0 1 2

Collector - Emitter voltage : VCE [ V ]

[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)

5000

VGE=0V, f= 1MHz, Tj= 25 C

t No

e m m
3

ew n for
4

de
10 15

n sig
Ic= 20A Ic= 10A Ic= 5A

nd
2 0 5

eco
4
o

20

25

Gate - Emitter voltage : VGE [ V ]

[ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25 C

1000 25
o

800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]

20 Gate - Emitter voltage : VGE [ V ]

1000

Cies

600

15

500

400

10

200

100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100

IGBT Modules

7MBR10SA120

1000

[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120, Tj=25C

[ Inverter ] Switching time vs. Collector current (typ.)

1000

Vcc=600V, VGE=15V, Rg=120, Tj=125C

toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500

Switching time : ton, tr, toff, tf [ nsec ]

ton

ton

tr

tr

tf 100

100 tf

50 0 5 10 Collector current : Ic [ A ] 15 20

50 0 5 10 Collector current : Ic [ A ] 15 20

[ Inverter ] Switching time vs. Gate resistance (typ.)

Vcc=600V, Ic=10A, VGE=15V, Tj=25C

5000 3

[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120

ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125 C)
o

1000

500

100

50 50 100

Gate resistance : Rg [

[ Inverter ] Switching loss vs. Gate resistance (typ.)

8

Vcc=600V, Ic=10A, VGE=15V, Tj=125C

25

No

nd e mm
tf

for
1 0 0 2000

de
w ne
5 10

n sig

.
o o o o

Eon(25 C)

Eoff(125 C)

Eoff(25 C) Err(125 C)

Err(25 C)

o c e r
500
]

1000

15

20

Collector current : Ic [ A ]

[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE= <15V, Rg>120 , Tj<125C = =

Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 6 Collector current : Ic [ A ] Eoff Err 0 50 100 500 Gate resistance : Rg [
]

20

15

10

2 5

0 1000 2000 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]

IGBT Modules

7MBR10SA120

[ Inverter ] Forward current vs. Forward on voltage (typ.)

25 300

[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=120

Tj=125 C 20

Tj=25 C 100

trr(125 C)

Reverse recovery time : trr [ nsec ]

trr(25 C) 50

15

Reverse recovery current : Irr [ A ]

Forward current : IF [ A ]

10

10

Irr(125 C)

Irr(25 C)

0 0 1 2 Forward on voltage : VF [ V ] 3 4

1 0 5 10 Forward current : IF [ A ] 15 20

[ Converter ] Forward current vs. Forward on voltage (typ.)

25

Tj= 25 C 20

Tj= 125 C

Forward current : IF [ A ]

15

10

0 0.0

0.4

0.8

Forward on voltage : VFM [ V ]

Transient thermal resistance

10 200 100

t No

nd e mm
1.2

ew n for

de

n sig

eco
1.6

2.0

[ Thermistor ] Temperature characteristic (typ.)

FWD[Inverter] Thermal resistanse : Rth(j-c) [ C/W ] Conv. Diode Resistance : R [ k ] 1 IGBT [Inverter,Brake] 10

0.1

0.1 0.001 0.01 0.1 -60 -40 -20 0 20 40 60 80

o

100

120

140

160

180

Pulse width : Pw [ sec ]

Temperature [

C]

IGBT Modules

7MBR10SA120

[ Brake ] Collector current vs. Collector-Emitter voltage

25

[ Brake ] Collector current vs. Collector-Emitter voltage

25

Tj= 25 C (typ.)

Tj= 125 C (typ.)

VGE= 20V 20

15V 12V 20

VGE= 20V

15V

12V

Collector current : Ic [ A ]

15 10V 10

Collector current : Ic [ A ]

15 10V

10

5 8V 8V

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)

25 10

[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)

o

Tj= 25 C 20

Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

15

10

0 0 1 2

Collector - Emitter voltage : VCE [ V ]

[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C

5000 1000
o

t No

e m m
3

ew n for
4

de
10 15

n sig
Ic= 20A Ic= 10A Ic= 5A

nd

eco
4

0 5 20 25 Gate - Emitter voltage : VGE [ V ]

[ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25 C

25
o

800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]

20 Gate - Emitter voltage : VGE [ V ]

1000

Cies

600

15

500

400

10

200

100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100

IGBT Modules
Outline Drawings, mm

7MBR10SA120

No

nd e mm o c e r

ew n for

de

n sig