Problem 1:

Equivalent dynamic force from Newtons 2nd law: ( The maximum bending moment is: ( The moment of inertia of beam (I) is: ( )( ) ) ( ) ( ) )( )

Constant C is: The corresponding maximum stress is: ( ( Maximum strain is: )( ) )

The Voltage generated in the PZT piezoelectric crystal is:

Or: with ( )( )

Problem 2:
The diameter of the dot film on the paper is:

Volume of the dot is: ( ) ( )

The linear expansion () required on the PZT is:

The linear strain () actuated on the PZT is:

The required voltage to be:

Therefore, the required voltage (V) with t is: ( ) ( )

Problem 3:
Since etch rate in <111> direction is zero, hence we do not need calculate under-cut length. Hence ( )
B
15.00 2.00

Mask
30.00 15.00

15.00

21.20

(b)
99.90

A-A

100.00

(a) A

15.00

21.20

54.7
200

(c)
30.00

B-B

Figure 1: (a) Top of the self-limiting stable profile (SLSP), (b) Cross-sectional view A-A, (c) Cross-sectional view B-B.

200

54.7

Problem 4:
A generic surface micromachining process, which have two layers of structural layers and two layers of sacrificial materials. The substrate is silicon (Si), the structural layer #1 is polycrystalline silicon, and the structural layers #2 is Parylene. Parylene is considered by many to be the ultimate conformal coating for the protection of devices, components and surfaces in the electronics, instrumentation, aerospace, medical and engineering industries. Material for sacrificial layer #1 is LPCVD silicon oxide (SiO2). Because substrate is silicon, we can use the chemical reaction in this process: SiH4 + O2 -> SiO2 + 2H2 In temperature range of 400 to 500 oC with an activation energy around Ea = 0.4 eV. Addition SiO2 easily etching by HF. Structural layer #2 is polycrystalline silicon also using method CVD: SiH4 -> Si + 2H2 This process takes place in a temperature range of 600 to 650 oC with reactivation energy of 1.7 eV. Sacrificial layer #2 may be SiO2. Because, structural layer #2 is Parylene just only protect structural layer #1. We use SiO2 for sacrificial layer #2 due to we remove at the same time sacrificial layer #1 and #2 by HF.

Parylene SiO2 Polycrystalline Silicon SiO2 Subtrate Silicon (Si)

Structural layer #2 Sacrificial layer #2 Structural layer #1 Sacrificial layer #1

Figure 2: Candidate materials for sacrificial layers