LED DOT MATRIX BL-M23A881XXX

Features: 60.20mm (2.3) 5.0 dot matrix LED display, RGB COLOR Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance.

Electrical-optical characteristics: (Ta=25C) Part No Row Cathode Row Anode Emitted Column Anode Column Cathode Color
Super Red BL-M23E881RGBXX BL-M23F881RGBXX Green Ultra Blue Ultra Red BL-M23E881DUGU B-XX BL-M23F881DUGU B-XX Ultra Green Ultra Blue

(Test Condition: IF=20mA) Chip VF Unit:V P Material Typ Max (nm)

GaAl As/GaAs,DH GaP/GaP InGaN GaAl As/GaAs,DDH AlGaInP InGaN 660 570 470 660 574 470 1.85 2.20 2.70 1.85 2.20 2.70 2.20 2.50 4.20 2.20 2.50 4.20

Iv TYP.(mcd ) 280 250

150

310
380 270

-XX: Surface / Lens color 0 Number Ref Surface Color White Epoxy Color Water clear

1 Black White diffused

2 Gray Red Diffused

3 Red Green Diffused

4 Green Yellow Diffused

Absolute maximum ratings (Ta=25C) Parameter Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature T OPR Storage Temperature T STG Lead Soldering Temperature T SOL S 25 60 5 150 G 30 65 5 150 B
30 120 5 100

D 25 60 5 150 -40 to +80 -40 to +85

UG
30 75 5 150

UB
30 120 5 100

Unit mA mW V mA C C

Max.2605C for 3 sec Max. (1.6mm from the base of the epoxy bulb)

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LED DOT MATRIX BL-M23A881XXX

Package configuration & Internal circuit diagram

Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice.

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LED DOT MATRIX BL-M23A881XXX

Typical electrical-optical characteristics curves:

1.0 (A) (B ) (C) ( D) (2) (3) (8) ( 4) (1) (6) ( 5) (9) (10)

0.5

0 350

400

450

500

550

600

650

700

750

800

850

900

950

1000

Wav elength(nm) RELATIV E INTENS ITY Vs WA VELE NGT H( p )

(1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red

(9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green

50 F O R W A R D C U R R E N T ( m A ) 40 30 20 10 0 1.2

8 64 5

2 3

R E L A T I V E L U M I N O U S I N T E N S I T Y 3.0

4.0 1 3.0 F O R W A R D C U R R E N T ( m A )

50 40 30 20 10 0

1 6 2,4,8,A 3 5

2.0

5 B

1.0 0 20 40 60 80 100

1.6

2.0

2.4

2.6

20

40

60

80

100

FORWARD VOLT AGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE

FORWARD CURRENT (mA) RELATIVE LUMI NOUS INTENSI TY VS. FORWARD CURRENT

AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE

R E L A T I 1 V 3 E 2 5 4 L 2 U M 1 3 I N O U 0.5 S I N T E N S 0.2 I T Y 0.1 -30 -20

3KHz 300KHz 1KHz 100KHz F-REFRESH R ATE 10 10KH z 9 8 7 6 5 I D C M A X . I p 4 e a k M A 3 X . 2 -10 0 10 20 30 40 50 60 70 1 AMBIENT TEM PER ATUR E Ta( ) 1 10 100 1000 tp-PU LSE DU RATION uS (1,2 ,3 ,4,6,8,B.D.J. K) 10,000 I D C M A X . I p e a k M A X .

30KHz 3 KHz 300Hz 100KHz 10KHz 1KHz 100H z 10 9 8 7 6 5 4 3 2 1 1 10 100 1000 tp-P ULSE DU RATION uS (5)

10,000

NOTE:25 free air temperat ure unless otherw ise sp ecifie d

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LED DOT MATRIX BL-M23A881XXX

Packing and weighting

35.7g/pcs

Maximum 10pcs/bag

Maximum 5 Bag/Inner Box

3 Inner Box /Box

9 Inner Box /Box

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