MAGNA

TEC
25.0
+0.1 -0.15

BUZ900D BUZ901D

MECHANICAL DATA Dimensions in mm

NCHANNEL POWER MOSFET

8.7 Max. 1.50 Typ. 11.60 0.3

10.90 0.1

POWER MOSFETS FOR AUDIO APPLICATIONS

30.2 0.15

20 M ax.

39.0 1.1

16.9 0.15

1.0

FEATURES
HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)

R 4.0 0.1

R 4.4 0.2

HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE Case Source PCHANNEL ALSO AVAILABLE AS BUZ905D & BUZ906D DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE

TO3
Pin 1 Gate Pin 2 Drain

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25C unless otherwise stated) VDSX Drain Source Voltage VGSS ID ID(PK) PD Tstg Tj RJC Gate Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction Case @ Tcase = 25C BUZ900D 160V 14V 16A 16A 250W 55 to 150C 150C 0.5C/W BUZ901D 200V

Magnatec.

Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

Prelim. 10/94

MAGNA

TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain Source Breakdown Voltage Gate Source Breakdown Voltage Gate Source CutOff Voltage Drain Source Saturation Voltage

BUZ900D BUZ901D

STATIC CHARACTERISTICS (Tcase = 25C unless otherwise stated)

Test Conditions
VGS = 10V ID = 10mA VDS = 0 VDS = 10V VGD = 0 BUZ900D BUZ901D IG = 100A ID = 100mA ID = 16A VDS = 160V IDSX Drain Source CutOff Current VGS = 10V BUZ900D VDS = 200V BUZ901D yfs* Forward Transfer Admittance VDS = 10V ID = 3A 1.4

Min.
160 200 14 0.1

Typ.

Max.

Unit
V V

1.5 12 10

V V

mA 10 4 S

DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated)

Characteristic
Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turnon Time Turn-off Time

Test Conditions
VDS = 10V f = 1MHz VDS = 20V ID = 7A

Min.

Typ.
950 550 18 160 80

Max.

Unit
pF

ns

* Pulse Test: Pulse Width = 300s , Duty Cycle 2%.

300

Derating Chart

250
CH AN NE L D ISS IP ATION (W )

200

150

100

50

0 0 25 50 75 100 125 150

TC CASE TEMPERATURE (C)

Magnatec.

Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

Prelim. 10/94

MAGNA

TEC
22 20 18
I D D R AIN C U RR EN T (A)
7V

BUZ900D BUZ901D

Typical Output Characteristics

TC = 25C

22 20 18
I D D R AIN C U RR EN T (A)

Typical Output Characteristics

TC = 75C

16
6V

16 14 12

7V 6V

14
5V

12
PC

5V

PC

10 8 6

25

10 8 6 4

4V

0W

25

4V

0W

3V

3V

4 2 0 0 10 20 30 40 50

2V

2V

1V

2 0 60 70 0 10 20 30 40 50

1V

60

70

V DS DRAIN SOURCE VOLTAGE (V)

V DS DRAIN SOURCE VOLTAGE (V)

100

Forward Bias Safe Operating Area

TC = 25C G FS TRA NSC ON D UC TAN CE (S)

100
V DS = 20V

Transconductance

I D D R AIN C U RR EN T (A)

10
DC

10
TC = 25C TC = 75C

OP

ER

AT

IO

1
BUZ900D BUZ901D

160V

0.1 1 10 100

200V

0.1 1000 0 2
4

10

12

14

16

V DS DRAIN SOURCE VOLTAGE (V)

I D DRAIN CURRENT (A)

Drain Source Voltage

vs
16 14
V DS DR AIN S OU RC E V OLTAGE (V )

Gate Source Voltage

TC = 25C

22 20 18

Typical Transfer Characteristics

V DS = 10V TC = 25C

12
I D D RA IN C UR R EN T (A)

16 14 12 10 8 6 4 2 0
TC = 75C TC = 100C

10 8 6
I D = 9A I D = 14A

4
I D = 5A

2
I D = 3A

0 1 2 3 4 5 6 7 8 9
V GS GATE SOURCE VOLTAGE (V)

10

11

V GS GATE SOURCE VOLTAGE (V)

Magnatec.

Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

Prelim. 10/94