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TEC
25.0
+0.1 -0.15
BUZ900D BUZ901D
10.90 0.1
30.2 0.15
20 M ax.
39.0 1.1
16.9 0.15
1.0
FEATURES
HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)
R 4.0 0.1
R 4.4 0.2
HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE Case Source PCHANNEL ALSO AVAILABLE AS BUZ905D & BUZ906D DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE
TO3
Pin 1 Gate Pin 2 Drain
Magnatec.
Prelim. 10/94
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain Source Breakdown Voltage Gate Source Breakdown Voltage Gate Source CutOff Voltage Drain Source Saturation Voltage
BUZ900D BUZ901D
Min.
160 200 14 0.1
Typ.
Max.
Unit
V V
1.5 12 10
V V
mA 10 4 S
Test Conditions
VDS = 10V f = 1MHz VDS = 20V ID = 7A
Min.
Typ.
950 550 18 160 80
Max.
Unit
pF
ns
300
Derating Chart
250
CH AN NE L D ISS IP ATION (W )
200
150
100
50
Magnatec.
Prelim. 10/94
MAGNA
TEC
22 20 18
I D D R AIN C U RR EN T (A)
7V
BUZ900D BUZ901D
22 20 18
I D D R AIN C U RR EN T (A)
16
6V
16 14 12
7V 6V
14
5V
12
PC
5V
PC
10 8 6
25
10 8 6 4
4V
0W
25
4V
0W
3V
3V
4 2 0 0 10 20 30 40 50
2V
2V
1V
2 0 60 70 0 10 20 30 40 50
1V
60
70
100
100
V DS = 20V
Transconductance
I D D R AIN C U RR EN T (A)
10
DC
10
TC = 25C TC = 75C
OP
ER
AT
IO
1
BUZ900D BUZ901D
160V
0.1 1 10 100
200V
0.1 1000 0 2
4
10
12
14
16
22 20 18
12
I D D RA IN C UR R EN T (A)
16 14 12 10 8 6 4 2 0
TC = 75C TC = 100C
10 8 6
I D = 9A I D = 14A
4
I D = 5A
2
I D = 3A
0 1 2 3 4 5 6 7 8 9
V GS GATE SOURCE VOLTAGE (V)
10
11
Magnatec.
Prelim. 10/94