Cau Kien Dien Tu - Pham Thanh Huyen

Phm Thanh Huyn
----- -----
Bi ging
Cu kin in t
Chuyn ngnh: KTVT, KTTT, KH-THGT
H ni 5/ 2005
Li ni u
Cu kin in t l mn hc nghin cu cu to, nguyn tc lm vic
cng nh l nhng ng dng in hnh ca cc linh kin in t c bn. y c
coi l mt mn c s quan trng trc khi tip cn su hn vo phn k thut
in t. Mn hc trang b kin thc nn tng sinh vin tip thu kin thc cc
mn hc tip theo nh K thut mch in t, K thut xung, K thut o lng
v thc tp ti phng th nghim.
Bi ging Cu kin in t c bin son vi mc ch nh trn v da
trn cc gio trnh v ti liu tham kho mi nht hin nay, c dng lm ti
liu tham kho cho sinh vin chnh qui cc chuyn ngnh: K thut Vin thng,
K thut Thng tin, T ng ho, Trang thit b in, iu khin hc v Tn hiu
Giao thng. Ngoi ra, y cng l ti liu tham kho b ch cho sinh vin ngnh
C kh v sinh vin h ti chc khi cn tm hiu su hn v in t c bn.
Mc d c kim tra cn thn nhng ti liu chc chn cn c sai st.
Tc gi xin gi li cm n chn thnh ti cc ng nghip trong b mn K thut
in t ng gp nhiu kin qu bu cho ti liu ny.
Rt mong nhn c cc kin ng gp ca bn c. Cc kin ng
gp xin gi v B m K thut in t - Khoa in in t - H. GTVT.
H Ni thng 5 nm 2005
Tc gi
Chng I: C s vt l ca vt liu linh kin
Chng I
C s vt l ca vt liu linh kin

I. Khi nim v l thuyt vng nng lng
1. Bn cht ca nguyn t
Tt c cc vt cht u hnh thnh t cc ht
nh li ti. Nhng ht ny c mt dy c v lm cho
vt cht dng nh l lin tc v chng qu nh v di
chuyn vi tc cc nhanh. Cc nh khoa hc
nhn bit c 92 loi vt cht c bn trong t nhin,
chng c gi l cc nguyn t. Sau ny c mt vi
nguyn t do con ngi to ra. Mi mt nguyn t
u c cu trc ht ca ring n, gi l cc nguyn t.
Cho ti cui th k 19 ngi ta vn cho rng nguyn
t l mt phn t vt cht khng c cu trc v khng th phn chia. Tuy nhin, sau
hng lot nhng nghin cu, ti nay ngi ta a ra m hnh ng n ca nguyn t
d rng vn cha thc s bit c c ht vt cht no nh nht hay khng. Di y l
mt s kt qu ca l thuyt nguyn t c tha nhn rng ri, n gii thch c tnh
ca vt cht tt hn bt c l thuyt no khc.
Tt c cc nguyn t u bao gm mt ht nhn nh tp trung hu ht khi lng
ca nguyn t. Quay xung quanh ht nhn ny l cc in t (electron) mang in tch
m, nh v nh hn nhiu.
Ht nhn bao gm cc ht proton v ntron, proton mang in tch dng cn
ntron khng mang in.
qp = - qe = 1,6 x 10-19 C
Khi nguyn t trng thi bnh thng s proton = s in t nn nguyn t trung
ho v in.
Mt s thay i nh trong cu to ca nguyn t cng c th to nn mt s khc
bit cc k ln v tnh cht ca n. V d, chng ta ch c th sng c nu th bng
oxy thun tu nhng khng th sng nu ch c kh nito. oxy c th lm kim loi b n
mn nhng nito th khng. Mc d iu kin bnh thng c oxy v nito u khng
mu, khng mi, khng v v trng lng nguyn t gn bng nhau. Chng khc nhau v
oxy c 8 proton trong khi nito ch c 7.
M hnh lng t ca nguyn t
in t nhng qu o lng t xc nh, n quay quanh ht nhn nh s cn
bng gia 2 lc:
Lc in gia in tch (-) ca in t v in tch (+) ca ht nhn .
Lc hp dn (lc hng tm) gia 2 thc th c khi lng l in t v ht
nhn.
Cu kin in t
Cc in t lin kt vi ht nhn khng phi nhng mc nng lng bt k m

ch nhng mc nng lng ri rc xc nh theo nhng qu o cho php. Nhng mc
nng lng ny gi l mc lng t. Cc mc nng lng ny khng cch u nhau.
Cc in t cng xa ht nhn lin kt vi ht nhn cng yu.
Mi nguyn t c v s nhng qu o c th nhng khng phi tt c cc qu
o ny u c in t .
Bohr cho rng:
Cc e khng chuyn ng trong nguyn t theo nhng qu o bt k m ch theo
mt qu o xc nh gi l qu o lng t. Khi chuyn ng trong qu o ny e
khng b mt i nng lng. Ch khi e nhy t qu o ny sang qu o khc th trng
thi nng lng ca n mi thay i. Khi lng t nh sng photon b bc x hay
hp th.
Hai tin ca Bohr:

+ Tin v trng thi dng: nguyn t ch tn ti trong nhng trng thi c
nng lng xc nh gi l trng thi dng. Trong cc trng thi dng nguyn t khng
bc x.
+ Tin v s bc x v hp th nng lng ca nguyn t: trng thi dng c
nng lng cng thp th cng bn vng. Khi nguyn t trng thi dng c nng lng
ln bao gi cng c xu hng chuyn sang trng thi dng c nng lng nh. Khi ny
n bc x ra 1 photon c nng lng ng bng hiu 2 mc nng lng .
S in t ti a trn mi qu o l 1 s xc nh: (2n2)
n=1
lp K
2 in t
n=2
lp L
8 in t
n=3
lp M
18 in t
n=4
lp N
32 in t
n=5
lp O
50 in t
Cc in t lp ngoi cng c gi l cc in t ho tr
in t ha tr s xc nh tnh cht vt l cng nh ho hc ca nguyn t
S in t ho tr ln nht l 8 (vi kh tr)
S in t ho tr nh nht l 1 (vi kim)
Bn knh qu o lng t
h2
1
r = n2. .
Z me .e 2 .K 0
Pham Thanh Huyen_GTVT

trong :
n = 1, 2, 3, l s lng t
Z: s th t ca nguyn t trong bng tun hon (s proton trong ht nhn)
me = 9,1 x 10-31 kg
l khi lng ca in t
-19
e = -1,6 x 10 C
l in tch ca in t
h
h=
= 1,054.10 34 Js l momen gc ca in t (hng s Plank rt gn)
2
h = 6,625.10-34 Js
l hng s Plank
K0 = 9.109 Nm2/C l h s t l
Nng lng ca in t trn qu o (cn gi l nng lng trng thi dng
hay nng lng trng thi ngh)
Wn =
me .e 4
1 2
1
= R.h.Z 2 . 2
.
Z
.
2
2 2
n
2.(4 0 ) h
n
me .e 4
= 3,27.1015.s 1
4 (4 0 ) 2 h 3
Tn s photon bc x khi in t nhy t qu o c mc nng lng WK sang
mc nng lng Wi c tnh theo cng thc:
W Wi
1
1
f = K
= R.Z 2 .( 2 2 )
h
ni
nK
nK, ni l 2 s lng t ng vi trng thi dng WK v Wi
Ngi ta gi dy ph bc x ra khi in t nhy:
+ T qu o ngoi v qu o th nht l dy vch ph Lyman
+ T qu o ngoi v qu o th hai l dy vch ph Banme
+ T qu o ngoi v qu o th ba l dy vch ph Paschen
+ T qu o ngoi v qu o th t l dy vch ph Bracket
.
Vi R l hng s Ritbe R =
2. Cc mc nng lng ca nguyn t

Theo cng thc:
Wn =
me .e 4
1 2
1
= R.h.Z 2 . 2
.
Z
.
2
2 2
n
2.( 4 0 ) h
n
Ta thy ng vi mi gi tr ca n s c mt mc nng lng tng ng. Tp hp

cc mc nng lng ny cho ta gin nng lng ca nguyn t.
Di y l gin nng lng ca nguyn t Hidro
Cu kin in t
E(eV)
O ion ho
13,6
12,07
M 2nd
L 1st
91nm
121nm
10,2
486.1nm
N 3rd
656.3nm
12,74
K - ground
Ngi ta chn mc nng lng thp nht l mc 0 (mc t- ground) cn cc mc

khc gi l mc kch thch.
Khi nhn nng lng th in t s chuyn ln mc nng lng cao xa ht nhn
hn v s bt khi nguyn t nu nng lng nhn c ln, chnh l gi tr ln
nht trong gin nng lng (nng lng ion ho).
Nguyn t ch tn ti trng thi kch thch (c nng lng W2) trong khong t
-10
10 10-7 s sau n tr v trng thi tnh (nng lng W1). Khi , n bc x ra 1
photon c tn s:
W W1
[Hz] vi W2 > W1 v tnh bng n v [J]
f = 2
h
12400
hay photon c bc sng =
vi E n v [eV] v [A0]
E 2 E1
1 eV l nng lng c tnh bng cng ca 1e chuyn di trong in trng gia
2 im c hiu in th l 1V.
1eV = 1,6.10-19 C x 1V = 1,6.10-19 J
3. Cc phng php cung cp nng lng cho nguyn t
a. S va chm ca in t vi nguyn t:
Gia tc cho in t trong 1 ng phng cung cp cho in t mt nng lng ln
vi vn tc cao. Khi in t ny va p vi nguyn t, n truyn nng lng cho nguyn
t lm cho cc in t (ch yu l in t ho tr) nhy ln mc nng lng cao hn. Khi
nng lng cung cp ny ln in t ho tr ca nguyn t c th b bt ra khi
nguyn t, nng lng ny gi l th nng ion ho.
Mi vt cht u c th nng ion ho t 4 25 eV.
Nng lng d tha s tn ti di dng ng nng ca 2 in t v mt ion dng

b. S va chm ca quang t vi nguyn t
Kch thch loi ny ch thc hin c khi photon c nng lng ng bng
chnh lch nng lng gia 2 mc nng lng tnh W1 v W2 ca nguyn t. Ni cch
khc, photon ch b hp th khi nng lng ca n bng:
h.f = W2 W1
Nu tn s nh sng chiu vo ln ion ho nguyn t th nng lng hf c
th ln hn hoc bng th nng ion ho. Nng lng d tha s tn ti di dng ng
nng ca in t pht ra v ion dng va hnh thnh.
Ch : Nguyn t b kch thch c th tr v trng thi ban u trong mt ln hoc mt
vi ln nhy (bc x mt hoc mt vi photon)
4. L thuyt di nng lng trong cht rn
Hu ht cc kim loi v bn dn u c cu trc mng tinh th, ngha l cc
nguyn t b tr theo mt quy lut nht nh hnh thnh nn mng tinh th.
Khi to nn mng tinh th cc in t chu s nh hng v rng buc ln nhau.
c bit l cc in t ho tr, khi chng khng cn lin kt ch vi mt nguyn t
ring l m chng thuc v mt h cc nguyn t nh l mt h thng nht.
Kt qu l hnh thnh nn di nng lng thay cho mc nng lng nh nguyn
t c lp.
Gii thch: Xt cu trc ca mt khi tinh th gm N nguyn t (khong 1023 nguyn
t)
Si: 1s2 2s2 2 p6 3s2 3p2 (14 in t )
Ge: 1s2 2s2 2 p6 3s2 3p6 4s2 3d10 4p2 (32 in t)
Nh vy, khi khong cch gia cc nguyn t kh ln ( coi chng khng gy
nh hng ti nhau), c 2N in t chim ht 2N trng thi s c th v tt c c cng
mc nng lng; c 2N in t chim 2N trng thi trong s 6N trng thi p c th v tt
c cng mc nng lng.
Khi khong cch gia cc nguyn t gim xung hnh thnh nn mng tinh th th
theo quy tc hn ch Pauli cc in t trn s khng th c cng mc nng lng, do
m chng hnh thnh nn s lng ln cc mc nng lng tch ri nhng rt gn nhau
gi l vng nng lng.
Tip tc gim khong cch gia cc nguyn t th cc di nng lng ny s gi
ph ln nhau v nh th c 4N in t chim 4N trng thi trong s 8N trng thi c th
c. Nh vy, mi nguyn t b ra 4 in t ng gp vo mng tinh th, di nng
lng m chng chim gi l di ho tr (valance band)
4N trng thi cn li khng c in t chim gi gi l di dn (conduction band),
phn cch gia di dn v di ho tr gi l di cm, n khng cho php tn ti bt c
mc nng lng no trong .
Cu trc di nng lng ph thuc vo hng tc ng ca nguyn t vi nhau v
s nguyn t trong mng.
Da vo cu trc vng nng lng ngi ta phn loi cht rn thnh 3 loi:
Eg > 2 eV
cch in
Cu kin in t
Eg < 2 eV
bn dn
khng c Eg
dn in
Ch : rng di cm ph thuc vo nhit , Eg gim khi nhit tng vi tc
Eg>2eV
Eg>2eV
Cch in
Bn dn
Dn in
gim l 3,6.10-4eV/K
Vt liu
Ge
Eg ti 0 K
0,785 eV
Eg ti 300 K
0,72 eV
Si
1,21 eV
1,1 eV
5. S phn b nng lng ca in t hm Fecmi

nhit 0 tuyt i, tt c cc in t u trng thi nng lng thp nht c
th v tun theo nguyn l loi tr Pauli. Vng ho tr c in y hon ton cn vng
dn th trng hon ton.
Khi nhit tng th di tc dng kch thch nhit mt s in t vng ho tr
s nhy ln vng dn v li mt l trng (trng thi khng c in t chim gi)
trong vng ho tr.
Theo cc nh lut c hc thng k th iu kin cn bng nhit xc sut in
y ca in t trn cc mc nng lng s c xc nh bi hm Fecmi:
1
f (E) =
( E E F ) / KT
1+ e
vi K = 1,38.10-23 J/K ~ 8,625.10-5 eV/K (hng s Bozman)
1
tng t c hm phn b l trng: 1 f(E) =
( E F E ) / KT
1+ e
Khi E EF > 3KT th f ( E ) = e ( E EF ) / KT
nh ngha mc Fecmi: nhit 0 tuyt i, tt c cc mc nng lng di mt
mc no u b in t chim y cn nhng mc nng lng cao hn u b trng,
ngi ta gi mc nng lng ranh gii gia cc mc c chim y v mc cn trng
l mc nng lng Fecmi 0 K.
Ni cch khc, mc Fecmi l mc nng lng m xc sut xut hin in t
l 1/2. EF l thc o xc sut chim ng cc trng thi nng lng cho php.
EF = 3,64.10-19.n2/3 vi n l mt in t t do / m3

Nhn xt:
f(E)
Ti T = 0 K
+ f(E) = 0 khi E > EF, ngha l khng
1
c trng thi lng t no cao hn EF c xut
hin in t.
+ f(E) = 1 khi E < EF, ngha l tt c 1/2
cc trng thi lng t c nng lng nh hn
EF u b in t chim ng.
T=0K
T = 300 K
T = 2500 K
E - EF
0
Xc sut ti vng chim ng khi T 0
u
lun
bng
1/2
khi
E = EF, khng ph thuc vo T.
Hm phn b Fecmi f(E) i xng qua EF ngha l xc sut in t chim ng
mc nng lng ( E F E ) bng xc sut in t chim ng mc nng lng
( E F + E )
V tr ca mc Fecmi trong gin nng lng cho php xc nh tnh cht ca
vt liu.
Nu mc Fecmi thuc:
Di dn
cht dn in
Di ho tr
cht cch in
Gia vng cm
bn dn nguyn tnh
Gn y vng dn Ec
bn dn loi N
Gn nh vng ho tr Ev
bn dn loi P
II. Cht cch in (dielectric)

1. nh ngha
Cht cch in (cn gi l cht kh in) l cc cht ngn khng cho dng in lu
thng.
Tuy nhin, trn thc t ngi ta c th coi cht cch in l cc cht c in tr sut
rt cao vo khong 107 1017 m nhit bnh thng.
Hu ht cc cht kh u l cc cht cch in tt, thu tinh, giy kh, g kh v cc
cht do cng l cc cht cch in. Nc thun tu l mt cht cch in tt nhng khi
b nhim, d l rt nh, n s cho php dng in chy qua. Oxit kim loi l cht cch
in mc du kim loi dng thun tu li l cht dn in.
Trong k thut in t, cht cch in c s dng l cht in mi, di y ta ch
xt ti cht in mi.
2. Cc tham s c bn ca cht in mi
a. thm thu tng i (hng s in mi)
C th ni trong cht in mi ch c nhng ht mang in rng buc. Di tc
dng ca in trng cc in t rng buc (lin kt) tip nhn nng lng in v dch
khi v tr cn bng hnh thnh nn nhng lng cc in, ngi ta gi l hin tng
phn cc ca in mi. Mc thay i in dung ca t in khi thay i chn khng
10
Cu kin in t
hay khng kh gia hai bn cc ca n bng cht in mi s biu din phn cc ca

cht in mi. Thng s ny gi l thm thu tng i ca cht in mi, thm
thu in hay hng s in mi.
c tnh nh sau:
C
= d
C0
Vi Cd: in dung ca t khi s dng in mi
Co: in dung ca t khi s dng chn khng hoc khng kh
biu th kh nng phn cc ca cht in mi. Cht in mi dng lm t in
cn c hng s in mi ln cn cht in mi dng lm cht cch in cn nh.
cng ln th kh nng tch lu nng lng in ca t cng ln.
b. tn hao in mi Pa
tn hao in mi c c trng bng tr s cng to ra trn mt n v th
tch cht in mi, gi l sut tn hao in mi. Ngoi ra, c trng cho kh nng
to nhit ca cht in mi khi t n trong in trng ngi ta s dng tham s gc
tn hao in mi.
Gi s mt t in c tnh n tn hao thng qua in tr R th s tng ng
c th coi nh sau:
Ic
IR
UR
Uc
V gin vecto tng ng l:
IC
IR
UR
U
I
Do : tg = R vi s bn tri hoc tg = R vi s bn phi
IC
UC
Khi tn hao c tnh:

Pa = U 2 . .C.tg
Trong :
Pa: cng sut in lm nng cht in mi
U: in p t trn t
: tn s gc (rad/s)

tg : gc tn hao in mi
Nhn xt:
+ tg cng nh th Pa cng nh
+ Di tn lm vic ca t cng rng th tn hao cng ln.
+ Vi t cao tn c th tnh Pa nh sau:
Pa = U 2 2 C 2 R
c. bn v in (Et)
bn v in ca cht in mi Et l cng in trng tng ng vi im
nh thng. Ngha l khi t vo in mi mt in trng bng in p nh thng Ut
th cht in mi khng cn kh nng cch in.
U
[KV/mm ; KV/cm]
E dt = dt
d
vi d l b dy ca cht in mi b nh thng
Hin tng nh thng cht in mi nh trn gi l hin tng nh thng do
in. Tuy nhin, vic ny s i km vi vic lm nng cht in mi v gy ph hu
thc s cht in mi. Ngoi ra, cht in mi c th b nh thng do qu trnh in
ho.
d. Nhit chu ng
L nhit cao nht m cht in mi vn cn gi c tnh cht l ha ca n.
e. Dng in trong cht in mi
Trong cht in mi c 2 thnh phn dng l dng in dch chuyn (hay dng
cm ng) v dng in r.
Dng in dch chuyn IC.M xut hin khi cht in mi nm trong in trng ca
in p xoay chiu hay ch tn ti thi im ngt in p mt chiu.
Dng in r Ir l dng lun tn ti trong cht in mi, n c to ra do in
tch t do v in t pht x chuyn ng di tc ng ca in trng. Nu dng r
ln th s lm mt tnh cht cch in ca cht in mi. Dng tng s l:
I = IC.M + Ir
f. dn in ca cht in mi
in tr ca cht in mi gia hai bn cc khi ta t mt in p mt chiu ln
chng. in tr cch in c xc nh theo tr s ca dng in r:
U
Rcd =
I I CM
IC.M : tng cc thnh phn dng in phn cc

nh gi dn in ca cht in mi ngi ta dng tham s in tr sut
khi v in tr b mt s
S
= R (.m)
d
: in tr trong mt th tch in mi
12
Cu kin in t
R: in tr ca khi in mi
S: din tch ca bn cc
d: b dy ca khi in mi
3. Phn loi v ng dng ca cht in mi
C hai loi cht in mi:
a. Cht in mi th ng
L vt cht c dng lm cht cch in v cht in mi trong t in nh: mica,
gm, thu tinh, cao su, giy, .
+ Mica: chu c in p cao, bn v in Edt = (50-200)kV/mm, nhit chu
ng c th ln ti 6000C, hng s in mi = 6 8 , gc tn hao nh tg = 0,0004 .
in tr sut rt ln = 10 7 m . Mica thng c s dng lm t in, lm mn
cch in ca n in t, lm cun cm
+ Gm: l t nung c kh nng chu nhit tt, hng s in mi ln t vi chc,vi trm
ti vi nghn. Gc tn hao nh tn s ln hn 1MHz v di 100Hz. Ngoi ra, c th
ch to t vt liu gm cc linh kin vi hnh dng rt khc nhau v thay i d dng.
Gm thng c s dng ch to t in c kch thc nh, in dung ln, t cao
tn hoc tn thp, t cao p hoc p thp
+ Giy lm t in: c bn v in kh cao (khong 30kV/mm), nhit chu ng
1000C ( nhit ln hn giy s b oxy ho v bn c hc gim), hng s in mi
kh nh = 3 4 . Giy s dng lm t hoc cch in cho cp in thoi phi rt mng
(0,007 - 0,05mm) qun c nhiu lp m vn m bo kch thc nh gn.
+ Sn cch in: l dung dch keo khi kh to thnh lp mng c tnh cht cch in, c
3 nhm c bn:
. Sn tm: dng tm cch in cc cht cch in c b mt xp nh giy,
ba, si, la lm v bc cho cun dy, bin p
. Sn ph: ph ln b mt si dy, b mt dng c tng cch in v
chng va p.
. Sn dnh: dng dnh cc cht cch in vi nhau hoc cht cch in vi
kim loi.
b. Cht in mi tch cc
L cc vt liu c th iu khin bng in trng (gm, thu tinh ), c hc (vt
liu c tnh cht p in nh thch anh ) hay quang hc (hunh quang )
+ Thch anh p in (SiO2): thch anh l tinh th SiO2 thin nhin trong sut hoc c
mu thng gi l pha l thin nhin. Tinh th thch anh p in c th ko di bng
phng php nhn to, khi cc tnh cht ca n gn ging nh ca tnh cht ca tinh
th thin nhin. Khi a vo s dng ngi ta phi s dng li ca kim cng to ra
c cc tm n tinh th. Gc ct khc nhau s cho tnh cht khc nhau. Di tc dng
ca bin dng c hc ta c th nhn c cc in tch trn cc mt i din ca tm
thch anh. Tr s in tch ln nht c th c to nn khi tm thch anh b ct vung
gc vi trc in X v khi tc ng mt lc dc theo trc X th hin tng p in gi l
p in theo hng dc. Nu t mt lc vo cc cnh bn ca tm thch anh th trn
cc cnh xut hin cc in tch v hiu ng ny gi l hiu ng p in ngang. Khi

thay i hng lc tc dng, du ca cc in tch trn cc mt s thay i. Thch anh
c s dng to b dao ng cng hng c tn s dao ng rt n nh hay lm b
chn lc tn s
+ Cht pht quang (hunh quang): loi bt pht sng khi in t p vo (v d nh ZnS)
dng ph ln mn ca n ng, mn hnh
III. Cht dn in (conductor)
1. nh ngha
Cht dn in l mt cht m cc electron c th d dng di chuyn t
nguyn t ny sang nguyn t khc.
Cht dn in c dn in cao. Tr s in tr sut ca n nh nht so vi cc
loi vt liu khc (10-8 10-5 m). Trong t nhin, cht dn in c th th rn (kim
loi, hp kim), lng (thu ngn, kim loi nng chy, dung dch in phn) hay kh (cht
kh v hi kh di cng in trng cao).
Cht dn in tt nht ti nhit phng l bc. ng v nhm cng l cc cht
dn in cc k tt. Trong hu ht cc mch in t v cc h thng in ngi ta s
dng dy ng, nhm, thic cn bc hay vng
ch c s dng trong cc trng hp c bit do
gi thnh ca chng rt cao.
Electron di chuyn trong cht dn in khng
theo mt dng u n m di chuyn t nguyn t
ny sang nguyn t khc k cn. S lng electron
di chuyn l mt s cc ln v chiu chuyn ng
ca chng ngc vi chiu quy c ca dng in.
2. Cc tham s c bn ca vt liu dn in
a. in tr sut:
= R.
S
l
: in tr sut [m, mm]
R : tr s in tr ca dy dn []
S : tit din ngang ca dy dn [m2, mm2]
l : chiu di dy dn [m, mm]
in tr sut ca vt liu dn in nm trong khong 0,016 m (ca Ag) n 10
m (ca hp kim Fe, Cr, Al)
b. H s nhit ca in tr sut
L h s biu th s thay i ca in tr sut khi nhit thay i 10C
Khi nhit tng th in tr sut cng tng theo quy lut:
T = 0 (1 + .T )
T : in tr sut ti nhit T [K]

14
Cu kin in t
0 : in tr sut ti 0 [K]
: h s nhit ca in tr sut [K-1]

Nu kim loi nguyn cht th h s nhit l nh nhau v bng: = 0,004 K-1
c. H s dn nhit
L lng nhit truyn qua mt n v din tch trong mt n v thi gian khi
gradien nhit bng mt n v.
S dn nhit l qu trnh truyn nhit do s chuyn ng hn lon ca cc nguyn
t hay phn t to nn.
T
Lng nhit Q truyn qua b mt S trong thi gian t l: Q = .
.S .t
l
: h s dn nhit [W/(m.K)]
T : lng chnh lch nhit hai im cch nhau l
T/l : gradien nhit
S : din tch b mt
t : thi gian
d. Cng thot ca in t trong kim loi
Biu th nng lng ti thiu cn cung cp cho in t ang chuyn ng nhanh
nht 0 [K] in t ny c th thot khi b mt kim loi.
0 [K] mc nng lng ln nht m in t c th t c l EF v nng lng
cn thit in t thot khi kim loi l EB m EF < EB nn in t c th thot ra
khi b mt kim loi th cn cung cp cho n mt nng lng l:
EW = EB -EF gi l cng thot ca in t trong kim loi
th nng lng dng tnh cng thot
E (eV)
E (eV)
EB
EB
EF
EF
Bn ngoi kim loi
EW
EF
(E)
Mt in t t do
Khong cch
Tng T
Khi cung cp nng lng cho in t trong mng tinh th di dng nhit th s
phn b nng lng ca in t thay i v d vo cng thc pht x nhit hay cn gi
l cng thc Bushman hay Richardson tnh dng in nhit.
I th = S . A0 .T .e
S : din tch si kim loi [m ]
2
Ew
KT

A0 : hng s [A/(m.K)2]
T : nhit [K]
K : hng s Bozman [eV/K] K = 6,625.10-5 eV/K
Ew : cng thot ca in t [eV]
e. in th tip xc
Cho hai kim loi khc nhau tip xc khi xut hin hiu in th tip xc gia
hai kim loi ny. Khi tip xc nhau cc in t s chy t kim loi c cng thot thp
hn sang kim loi c cng thot cao. Qu trnh ny tip din n khi kim loi 2 nhn
nhiu in t n mc to nn 1 trng cn li s dch chuyn in t t kim loi 1 sang
kim loi 2. V s chnh lch th nng c tnh:
EAB = EW2 EW1
S chnh lch in th tip xc gia hai kim loi bng hiu hai cng thot ca
chng. Tng ng vi th nng EAB c in th tip xc VAB [V] c tr s bng EAB
Ngi ta da vo hin tng ny ch to cp nhit in.
3. Phn loi v ng dng
C 2 loi vt liu dn in l vt liu dn in c in tr sut thp v vt liu dn
in c in tr sut cao.
a. Vt liu dn in c in tr sut thp
Cht dn in c in tr sut thp thng c dng lm vt liu dn in.
Bc (Ag) c dn in cao nht vi = 1,65 x 10-8 m c dng trong k
thut in t nhng phn quan trng yu cu dn in cao, do l kim loi qu him
nn ngi ta thng ch trng bc ln cc vt liu ph bin hn nh ng hay nhm.
ng (ng nguyn cht, ng ) (Cu) vi = 1,75 x 10-8 m c bn cao, d
gia cng do c s dng rng ri trong k thut in v in t lm dy dn, anot,
ng dn sng Hp cht ca Cu c = 0,03 0,06 m. Ni chung l c dn in
km ng nguyn cht nhng c bn c hc rt cao, v d nh ng thau (hp kim
vi Zn), ng trng (hp kim vi Zn, Ni), ng Bronda (hp kim vi Al, Sn)
Nhm (Al) c dn in tt th 3 sau Ag, Cu vi = 0,0267 m. Nhm c
tnh cht do, chc, h s phn x cao, chng n mn tt.
Thic Sn vi = 0,115 m dn in tt nhng tnh cht c hc rt km nn ch
c dng lm vt liu hn dy dn.
b. Cht dn in c in tr sut cao

Dng ch to cc dng c o in, in tr, bin tr, dy mayxo v cc thit b
nung nng bng in
16
Cu kin in t
IV. Vt liu t
1. nh ngha
Vt liu t l vt liu khi t vo trong mt t trng th n b nhim t
Khi khng c t trng ngoi th bn thn trong vt liu t tn ti cc vng nhim
t t pht gi l ngun t. Tuy nhin t thng ca cc vt liu t trong khng gian ngoi
u bng 0 v hng ca cc momen t ca tng ngun ring bit trong n khc nhau.
2. Tnh cht
a. T tr v t thm
Mt s cht c th lm cho cc ng t thng tr nn xa nhau hn trong khng
kh. Mt s cht khc li c th lm cho nhng ng t thng li gn nhau hn so vi
trong khng kh.
T tr l mt i lng nh gi s ngn cn vic lp nn t thng ca mt mch
t. N c tnh theo cng thc sau:
1 l
Rm = .
S
: t thm ca vt liu trong mch t
l : di ca mch t
S : din tch tit din ca mch t
Ch : H s in mi trong chn khng 0 [F/m] v t thm trong chn khng 0
[H/m] nhng v tng i th khng c th nguyn.
1/ gi l t tr sut ca 1m3 vt liu t
t thm c th tnh theo cng thc sau:
B [H/m]
=
H
vi B l cm ng t [Tesla] v H l cng t trng [A/m]

t thm ca chn khng, khng kh hay vt liu khng t tnh bt k lun l
mt hng s, c gi l t thm ca khng gian t do v c gi tr bng:
0 = 4.10-7 [H/m] .
b. t thm tng i r
t thm c o mt cch tng i vi chn khng, chn khng c gn
t thm bng 1.
Hin tng: khi a vt liu c t tnh vo trong lng cun dy dn in th mt
t thng tng hp qua cun dy tng ln nhiu ln. l v cc vt liu t ny c kh
nng dn t tt. S gia tng t thng tng hp l cm ng t B khi cho vt liu t vo
mch in c gi l t thm tng i r
= r x 0 = B/H
r khng c th nguyn

Ngc li, nu cn lm cho nam chm in yu i th cho len kh hoc sp ong
lm vt liu li, ngi ta gi y l cc cht nghch t.
Bng h s t thm tng i ca mt s vt liu thng dng c cho di
y:
Vt liu
t thm tng i
Bc
<1
Len kh
<1
Khng kh
1
Nhm
>1
Niken
50 60
Cobalt
60 70
Thp
60 - 100
Ferit
100 - 3000
St luyn
3000 8000
Permalloy
3,000 30,000
Permalloy c bit
100,000 1,000,000
c. t d
t d l php o mt cht s nh t tnh tt nh th no v v th tr thnh
nam chm vnh cu.
d t c din t bng phn trm. Nu mt t thng trong vt liu l X
(Tesla) khi n c a vo mt t trng c cng cao nht (ngha l dng in c
tip tc tng th thanh kim loi cng khng b t ho thm, n bo ho) v ch cn Y
(Tesla) khi ngt dng in th t d c tnh bng (Y / X).100%
Mi cht c t d khc nhau. Cc cht c t d cao c s dng lm
nam chm vnh cu. Trong khi cc cht c t d rt thp c s dng lm nam
chm in (c bit l nam chm in xoay chiu) v nu t d cao vt liu s tr nn
chm chp, tc l kh nng chuyn i cc tnh kh khn.
d. ng cong t ho B = f (H)
ng cong t ho c biu din trong B
hnh bn, n biu th s tng quan gia cm
ng t B v cng trng H. T ng cong
ny c th xc nh ng cong t thm tng
i theo cng thc trn.
0-A : do H yu nn cc domen t khng
sp xp thng hng B tng chm
A-B : H mnh hn v cc domen t sp xp
A
thng hng theo mt hng B tng mnh gn
nh tuyn tnh vi H
0
B-C : cc domen gn nh thng hng v C
gi l im bo ho v khi vt liu gi l bo ho.
18
C
B
Cu kin in t
Cc vt liu t khc s c ng
B
cong t ha khc v qua xc nh
c ng cong t thm tng i.
C
+Bbh
Hin tng t tr
Ban u khi vt liu cha
d b
nhim t, tng H ta c on O-a-b-c
ti c th t Hmax, gim H ti 0 th
Bd
cm ng t cn trong vt liu
H
-Hmax HC
nhim t l Bd (gi l cm ng t
a
d) on Cd. gim cm ng t
h Hmax
e o
A/m
d ti 0 th cn cung cp mt cng
t trng m v khi bng 0 th
cng t trng cn thit l Ch gi
g
l lc khng t. Tip tc tng gi tr
ngc ca cng t trng th B
-Bbh
f
cng tng theo gi tr m n gi tr
Bbh, ta c on cong t ho e-f. Gim
Vng t tr
cng t trng ngc li gim
n 0 th cm ng t B cng gim n gi tr cm ng t d, on o-g. gim
cm ng t n 0 ta li phi tng cng t trng theo chiu dng n tr s Ch,
on o-h v y cng chnh l lc khng t. Tip tc tng cng t trng theo chiu
dng ta c on h-c ca th.
Nh vy, th B/H c dng vng khp kn i xng.
Xt 3 loi vt liu vi 3 kiu vng t tr in hnh nh hnh di y
St mm:
+B
Bd
Bd
He
He
St mm
Thp cng
Ferit
+ tr nh nht
+ Lm vic iu kin m cng t trng b thay i o ngc ln. V
d nh nam chm in, li cun dy cao tn
Thp cng:
+ tr trong li ln => tn hao
+ cm ng t d ln => c s dng lm nam chm vnh cu, hoc cc thit

b khc nhng khng nn lm vic ni cng H i hng nhanh
Ferit:
+ Tn tht tr ln
+ B t tr s Bd khng i cho n khi H tng n cc i hng ngc li =>
lm b nh t.
Dng in xoy trong li st t:
Khi to mt li st t t trong mt cun dy th t trng bin i trn cun dy
s to ra mt sc in ng cm ng v to ra dng in lu thng trong li st t gi l
dng in xoy hay dng Fuco (chiu ca dng in ny c xu hng chng li s thay
i ca t trng). Dng in ny s lm nng li st t v gy hao ph nng lng.
hn ch dng in xoy ngi ta to li st t t cc l thp mng c sn cch in
tng in tr ca chng i vi dng in xoy. V d: li bin p lun c lm theo
cch ny.
Tuy nhin, trong mt s trng hp th dng in xoy ny li c li v n c xu
hng chng li s bin thin, tc l gp phn n nh. V d nh dng c o lng kiu
t in li dng dng in xoy lm cho kim ch th nhanh chng t trng thi cn
bng.
3. Phn loi v ng dng ca vt liu t
Ngi ta chia vt liu t thnh 2 loi l: vt liu t mm c t thm cao v lc
khng t nh v vt liu t cng c t thm nh v lc khng t cao
a. Vt liu t mm
+ Vt liu t mm dng tn s thp
V d nh l: St, hp kim st-silic, st-niken lm li bin p, nam chm in. y
l cc vt liu c thm t rt cao nhng t d li thp.
+ Vt liu t mm dng tn s cao vi trm KHz vi MHz
Ferit c c im: dn in cao, t thm rt cao, Ferit thch hp dng lm
li ca cc linh kin nh: cun dy c h s phm cht cao, bin p di tn rng, cun
dy trung tn, anten, bin p xung, cun lm lch tia in t. ..
Permalloy l hp kim ca Ni, Fe, Mn, Cr, Cu, Si,
c im: t thm cao c vi ngn ti vi trm ngn H/m, dng lm bin p micro,
u t, bin p nh cht lng cao.
b. Vt liu t cng
+ Nu phn chia theo ng dng th c cc loi sau:
. Vt liu t: ch to nam chm vnh cu. Ngi ta s dng cc vt liu t c
c tnh khng t ln v t d ln, tc l c kh nng nh t tt, vi hnh dng hp
l nh hnh mng nga ch to nam chm vnh cu. Khi b mt nam chm vnh cu
hoc dng in mt chiu t ho th vt trn s tr thnh mt nam chm vnh cu.
Vt liu t ghi m, ghi hnh. T trng c th c s dng lu tr d liu cc
trng thi khc nhau. Cc mi trng lu tr d liu thng dng bao gm bng t, a t
v b nh bt t.
. Bng t: chnh l cc bng ghi m trong cc my cassette hay ghi hnh cho
20
Cu kin in t
my video. Bn thn bng t cha hng triu cc ht oxit st c gn trn mt dy bng

mylar hay bng nha. T trng dao ng ti u ghi s phn cc nhng ht ny. Khi t
trng thay i cng trong khi bng chy vi mt tc u n s to ra cc vng
m trong cc ht oxit st c phn cc tng ng. Khi bng chy vi cng tc
qua mt my cassette ch playback, cc t trng xung quanh cc ht n gy ra
mt t trng dao ng c nhn dng bi u c. T trng ny c cng kiu bin
thin ging nh trng t gc u ghi. Bng t c nhiu dng vi rng v dy
khc nhau cho cc ng dng khc nhau. Tc ca bng t quyt nh trung thc
ca vic ghi bng. Tc cao l dnh cho m nhc v video cn tc thp dnh cho
ting ni. D liu trn mt bng t c th b bin dng hay b xo bi cc t trng bn
ngoi v nhit .
. a t: Mt a t c th dng cng hay mm. Cc a ny c nhiu kch
thc khc nhau. Cc a cng lu tr hu ht d liu v ni chung l nm bn trong
my tnh. a mm thng c kch thc 5 1/4inch v 3 1/2inch ng knh, c th
c a vo hay ly ra t mt my ghi/pht gi l a mm. Nguyn tc ca cc a
t cng tng t nh bng t. Tuy nhin, y thng tin c lu tr di dng s, tc
l ch c hai cch t ho cc ht khc nhau. iu ny s to ra nhng b lu tr hon
ho khng li. Thm na, a t hot ng khc vi bng t do khc bit v mt hnh
hc. Trn mt bng t, thng tin c tri ra trn mt dy di v rng, u ghi hay c
ng yn trong khi bng t quay. Ngc li, trn a t khng c hai bit no nm xa hn
ng knh ca a. iu ny c ngha l d liu c th c lu tr v s dng nhanh
hn nhiu so vi mt bng t. Ngy nay, vi s pht trin khng ngng ca khoa hc k
thut, ngi ta to ra c cc a cng bao gm nhiu a t xp chng ln nhau,
gia chng c khe h nh cc u ghi/c c th di chuyn d dng trn mt a t
ang quay tc cao.
. B nh bt t: y l phng php lu tr d liu phc tp m khng cn phi
di chuyn cc thnh phn nh trong my pht bng t hay cc a. B nh bt t l s
kt hp hon ho ca k thut lu tr d liu t cng nh k thut lu tr d liu in t.
S bit d liu c lu trn cc t trng nh trong mt phng tin c to ra t phim
t v vt liu bn dn. u im ca b nh bt t l mt cao, kh nng phc hi d
liu nhanh, tui th di v chi ph thp.
+ Phn loi theo cng ngh ch to
Hp kim thp c ti thnh Martenxit l vt liu n gin v r
Hp kim l t cng
Nam chm t bt
Ferit t cng: BaO.6Fe2O3 ch to nam chm tn s cao
Bng, si kim loi v khng kim loi dng ghi m
V. Cht bn dn (Semiconductor)
1. nh ngha v tnh cht
Bt u t nhng nm 60 cht bn dn tr nn khng th thiu i vi ngnh k
thut in t, n c mt tt c cc thit b in t.
Vt liu bn dn l vt liu m trong mt s iu kin n tr thnh cch in v
trong mt s iu kin khc n li dn in. Tnh a nng ny nm ch s dn in c

th c iu khin to ra cc hiu ng nh s khuch i m thanh, s chnh lu
dng in, chuyn i v trn ln tn hiu
Xt v c tnh dn in th vt liu bn dn c in tr sut ln hn vt liu dn
in nhng nh hn vt liu cch in.
Loi vt liu
in tr sut (m)
-8
-5
Dn
in
10 10
Bn dn
10-6 108
7
17
Cch in
10 10
c im ni bt ca vt liu bn dn l in tr sut ca n ph thuc rt nhiu
v nhit , in tr sut gim khi nhit tng. Ngoi ra n cn ph thuc vo loi
cht pha tp, nng tp cht, nh sng chiu vo, th nng ion ho .
Trong k thut in t, mt s cht bn dn c s dng rng ri l Silicon (Si),
Germani (Ge) v Galium Arsenide (GaAs). Germani (Ge) c s dng trong nhng
nm u ca cng ngh bn dn cn hin nay ch xut hin trong nhng ng dng c
bit.
in tr sut ca Si v Ge c gi tr trong khong: 0.01 10 m
C hai loi cht bn dn l bn dn thun (cn gi l bn dn rng hay bn dn
nguyn tnh) v bn dn tp (hay bn dn ngoi tnh).
Ht ti in trong cht bn dn (carrier
nhit 0[K] Si v Ge c 4 in t lp ngoi cng nhng c 4 in t ny u
tham gia vo 4 lin kt cng ho tr vi 4 nguyn t Si v Ge khc sao cho chng u
c 8 in t lp ngoi cng. Nh vy, mng tinh th khng c in t t do.
Khi nhit tng cc in t bt khi lin kt v di chuyn trong mng tinh th,
khi ny hnh thnh cc l trng v di chuyn nhng theo hng ngc li.
C ch l trng tham gia vo dn in:
Khi c mt lin kt khng hon chnh tc l c mt l trng xut hin th in t
ho tr ca lin kt bn cnh c th ri khi nguyn t ca n lp y vo l trng .
Khi chuyn t mt lin kt hon chnh sang l trng bn cnh th in t li mt l
trng. L trng ny li c lp y bi mt in t ho tr ca mt lin kt khc v c
nh vy c th coi l trng di chuyn theo hng ngc vi in t. Theo chiu dng
in th l trng mang in tch dng v c cng ln vi in tch ca in t.
Do trong cht bn dn ht ti in l in t v l trng. (iu ny hon ton
khc vi kim loi v kim loi ch c ht ti in l in t)
Nng ht ti in
Trn thc t cc in t v l trng phn b trong mng theo phn b xc sut ca
c hc lng t.
n = N C .e ( EC EF ) / KT
p = N V .e ( EF EV ) / KT
2mn KT 3 / 2
N C = 2.(
)
h2
2m p KT 3 / 2
N V = 2.(
)
h2
22
Cu kin in t
Vi
n, p: nng in t v l trng trong vng dn v vng ha tr

NC, NV: mt trng thi hiu dng ca vng dn v vng ho tr
mn, mp: l khi lng hiu dng ca in t v l trng. Cc gi tr ny
ph thuc v vng nng lng m chng chim gi. Trong iu kin nhit phng c
th coi mn = mp
Mt trng thi
hiu dng (ti 300K)
NC (cm -3)
NV (cm -3)
Ge
Si
GaA s
1,02.1019
5,65.1018
2,82.1019
1,83.1019
4,35.1017
7,57.1018
2. Bn dn thun (bn dn nguyn tnh Intrinsic)

a. nh ngha v tnh cht
Cht bn dn thun l cht bn dn m trong cu trc
mng tinh th ti mi nt mng ch c nguyn t ca mt
nguyn t.
v d: Si nguyn cht v Ge nguyn cht
Cu trc tinh th ca Si c cho hnh bn
nhit rt thp (0 tuyt i), cc in t ho
tr c lin kt cht ch vi li ion do dn in thp,
in tr sut cao. Chng c coi nh cht cch in
Khi nhit tng cao hn, cc in t ho tr nhn nng lng di dng nhit.
Lin kt gia in t ny v ion c th b ph v v in t tch ra khi nguyn t tr
thnh in t t do. Cc in t t do va tch ra c th di chuyn t do trong mng tinh
th do dn in ca cht bn dn tng. Nng lng cn thit b gy lin kt ca
in t vi li ion chnh l rng di cm Eg ( chnh l nng lng kch thch
in t nhy t di ho tr ln di dn)
Khi in t thot ra khi lin kt th n to ra mt l trng. L trng c c tnh
tng t in t v mang in tch dng. (Trn thc t l trng chnh l mc nng
lng b b trng). Di tc ng ca in trng th c in t v l trng u di
chuyn trong mng tinh th.
Trong bn dn thun nng in t bng nng l trng
E / KT
ni = pi = ( N C .N V )1 / 2 .e g
Nng (ti 300K)
ni (cm -3)
Ge
2,8.1013
Si
1,0.1010
GaA s
2,0.106
b. Mt s cht bn dn thng dng

* Silicon
Silicon (Si) thng c s dng rng ri ch to diode, mch tch hp. Tuy
nhin, c tnh cht mong mun ngi ta phi pha cc cht khc vo trong Si. Si c th
c khai thc trong t nhin hoc c cht lng cao nht th to ra bng cch nui
cc tinh th trong iu kin phng th nghim, sau s c a vo trong cc chip.
* Selenium

Selenium (Se) c tr khng ph thuc rt mnh vo cng nh sng tc ng
vo n. y l tnh cht chung ca vt liu bn dn nhng th hin r nht Se, v vy
Se c s dng ch to cc t bo quang in. Ngoi ra, Se c cn dng ch
to cc thit b chnh lu khu vc in p khng n nh do kh nng chu c in
p cao bt thng ca Se tt hn nhiu so vi Si.
* Germanium
Germanium (Ge) nguyn cht l mt cht dn in km. N tr thnh cht bn
dn khi thm mt s tp cht vo. Germanium c s dng rng ri trong thi k u
nhng v Ge d b h hng bi nhit nn sau ngi ta t dng loi vt liu ny, tr
nhng trng hp c bit.
3. Bn dn pha tp (bn dn ngoi tnh Extrinsic)
Bn dn tp l bn dn m trong mng tinh th mt s nt mng c thay th
bi nguyn t ca mt nguyn t khc. Qu trnh thm tp cht vo c gi l qu trnh
pha tp v vic ny lm cho tnh cht ca vt liu thay i rt nhiu tu vo cht pha tp
v nng ca cht . Mc pha tp c tnh bng n v ppm (n v phn triu)
Khi ny nng ca in t v l trng khng cn cn bng na. Nu bn dn c
ht ti in ch yu l in t th ngi ta gi bn dn loi N v nu ht ti in ch
yu l l trng th gi l bn dn loi P.
a. Bn dn loi N (bn dn loi cho, pha tp cht donor)
L bn dn hnh thnh khi pha tp cht nhm V vo bn dn thun.
V d: pha tp cht As, P, Sn (nhm V) vo bn dn nn Si (nhm IV)
Nguyn t tp cht c 5 in t ho tr lp ngoi cng nn n s dng 4 in t
cho 4 lin kt cng ho tr vi 4 nguyn t Si (hoc Ge) bn cnh. in t th 5 s
tha ra v c lin kt rt yu vi nguyn t tp cht. gii phng in t ny ch cn
cung cp mt nng lng rt nh vo khong 0,01 eV i vi Ge v 0,05 eV i vi Si.
Khi tch khi nguyn t th in t th 5 s tr thnh in t t do v nguyn t
tp cht tr thnh ion dng c nh. Nh vy s in t t do chnh bng s nguyn t
pha tp vo. Tp cht nhm V v vy c gi l tp cht cho (hay tp cht donor)
nhit khong 30
E (eV)
500K cc in t th 5 u c
Di dn
gii phng thnh in t t do,
ngha l nhy ln vng dn m EC
0,01 (Ge)
trong vng ho tr vn khng c l
0,05 (Si)
ED
Mc donor
trng (ngi ta cn gi ch ny
EF
Di cm
l ch ion ho ht donor) . S d
Eg
vy l do nguyn t ca bn dn
tp c cu trc tinh th khc nhiu EV
so vi cu trc tinh th ca bn
Di ho tr
dn nn v cc mc nng lng
cho php c hnh thnh 0
khong cch rt nh di di dn
Gin di nng lng ca bn dn loi N
(mc nng lng ny gi l mc
donor ED, xem hnh bn). Khi c
cung cp nng lng chng s d dng nhy ln vng dn (nng lng ny cha ln
24
Cu kin in t
in t vng ho tr nhy ln vng dn).

R rng l bn dn loi N nng ht dn in t nhiu hn nhiu so vi nng
l trng. in t c gi l ht dn a s (majority) v l trng c gi l ht dn
thiu s (minority).
nN >> pN
b. Bn dn loi P (bn dn loi nhn, pha tp cht acceptor)
Khi a tp cht l nguyn t ca nguyn t nhm III vo bn dn thun th ta c
bn dn loi P.
V d: pha Ga, In, B (nhm III) vo bn dn nn Ge (nhm IV)
Nguyn t tp cht c 3 in t lp ngoi cng nhng chng li phi thit lp 4
mi lin kt cng ho tr vi 4 nguyn t Si hoc Ge bn cnh. Do mi lin kt th 4
c mt l trng. Cc in t bn cnh s nhy sang lp y vo l trng ny v
nguyn t tp cht s tr thnh ion m cn nguyn t c in t va ri i tr thnh ion
dng c nh. Tp cht nhm III v vy c gi l tp cht nhn (hay tp cht
acceptor).
Tp cht pha vo s to ra
E (eV)
mt mc nng lng ring EA nm
trn nh vng ho tr, gi l
Di dn
mc acceptor EA cch EV mt on
rt nh, xem hnh bn. Do vy, ch EC
cn cung cp mt nng lng nh
ko in t khi vng ho tr
Di cm
EF
Eg
chim ng mc nng lng ny E
A
Mc acceptor
ca tp cht nhn, ko theo s to
ra l trng trong di ho tr nhng EV
trn di dn vn khng c in t.
Di ho tr
Nu tip tc tng nng tp 0
cht nhn th nng ca cc l
trng tng ln ng k trong di
Gin di nng lng ca bn dn loi P
ho tr nhng nng in t t do
trn di dn vn khng tng. Nh vy, nng l trng ln hn nhiu so vi nng
in t v l trng c gi l ht dn a s v in t c gi l ht dn thiu s.
pP >> nP
KL: Qa trnh pha tp cht vo bn dn nguyn tnh khng ch lm tng dn in m
cn to ra mt cht dn in c in t chim u th (loi N) hay l trng chim u th
(loi P).
* Ngoi cc loi bn dn k trn, hin nay ngi ta quan tm nhiu ti mt s hp
cht oxit kim loi cng c nhng tnh cht nh cc cht bn dn thun tu. chnh l
cng ngh MOS (metal-oxide semiconductor) v CMOS (complementary metal-oxide
semiconductor). c im ni tri ca cc thit b MOS v CMOS l chng hu nh
khng cn bt c nng lng no hot ng. Chng cn t nng lng n ni m mt
vin pin trn thit b MOS hay CMOS s ko di thi gian s dng cho n khi no n
cn nm trn gi ca n. Thm na, cc thit b MOS v CMOS c tc rt cao. iu
ny cho php n hot ng tn s cao v c kh nng thc hin nhiu php tnh trn
giy. Ngy cng c nhiu transistor v mch tch hp s dng cng ngh MOS v

CMOS v n cho php mt s lng ln diode v transistor ring bit nm trn mt chip
n. Ni cch khc, cng ngh MOS/CMOS c mt tch hp cao hn. Tuy nhin, vn
ln nht i vi MOS v CMOS l cc thit b d b h hng v tnh in.
4. Mc Fecmi trong cht bn dn (Fecmi energy level)
Trong bn dn nguyn tnh mc Fecmi nm
gia vng cm, iu ny chng t rng nng E (eV)
ca in t t do v l trng l cn bng nhau.
Hnh bn l hm phn b Fecmi v gin di EC
nng lng ca cht bn dn nguyn tnh cc nhit
T=0K
EF
khc nhau
T=250K
Khi pha tp cht vo v nhit cho gi
T=1000K
thit l tt c cc nguyn t tp cht u b ion ho EV
th mc Fecmi s phi di chuyn v mc Fecmi biu
th xc sut chim ng cc trng thi nng lng
cho php.
Vi bn dn loi N mc Fecmi s di chuyn
0
1/2
1 f(E)
ln pha trn v pha y di dn biu th rng c
rt nhiu trng thi nng lng trong di dn c cc in t donor chim y. Vi bn
dn loi P th ngc li, mc Fecmi di chuyn xung pha di v pha di ho tr
biu th mt s lng ln in t tp trung mc nng lng acceptor rt gn nh vng
ho tr.
Ch : Nu nng tp cht pha vo rt cao (> 1017 nguyn t/cm3) th mc Fecmi c
th trng vi y vng dn hoc nh vng ho tr, ngi ta gi l bn dn suy bin.
Ngoi ra c mt nh ngha chnh xc hn l khi EC EF < 3KT th l bn dn suy
bin. Nhm cht bn dn suy bin c s dng ch to cc loi linh kin c tnh
cht in quang c bit nh diode tunen, LED, LASER
Hn na, hm Fecmi cn l mt hm ca nhit .
5. Dng in trong cht bn dn
Dng in trong cht bn dn gm 2 thnh phn l dng khuch tn v dng tri.
a. Dng in khuch tn (diffusion current)
Dng in khuch tn l dng in xut hin khi c s chnh lch nng ht dn
cc vng khc nhau trong khi cht. Khi ht dn s chuyn t ni c nng cao
xung ni c nng thp.
Hin tng ny mang tnh cht thng k:
+ Mt dng l trng:
dp
J P = e.DP .
dx
+ Mt dng in t:
dn
J n = e.Dn .
dx
Vi dn/dx v dp/dx l gradien nng ca in t v l trng
Dp, Dn l h s khuch tn ca l trng v in t
Trong h s khuych tn D v linh ng quan h vi nhau theo h thc
26
Cu kin in t
sau:
Dp
Dn
KT
gi l in th nhit (VT = 26mV ti T = 300K)
e
n
H s khuch tn (cm2/s)
Ge
Si
Dn
99
34
Dp
47
13
= VT vi VT =
b. Dng in tri (drift current)

Dng in tri l dng chuyn ng ca ht dn di tc dng ca in trng
Trong cht bn dn c 2 loi ht ti in l in t vi in tch m, linh ng
n, nng n v l trng vi in tch dng, linh ng p, nng p. Khi thit lp
mt in trng E th cc ht ti in ny s chuyn ng theo 2 hng ngc nhau
nhng chiu dng in ca 2 loi ht ny s cng mt hng.
Do mt dng tri Jtr c tnh:
Jtr = Jn + Jp = ( n + p ).E = .E
vi
= (n. n + p. p).e / dn in (conductivity)
linh ng (ti 300K)
Ge
Si
3900
1400
n (cm2/V-s)
1900
450
p (cm2/V-s)
GaAs
8800
400
T cng thc ca dn in ta thy nng pha tp cht cng cao dn in

cng ln, in tr sut cng gim. Nhng khi linh ng ca ht dn li gim.
Vy, mt dng in tng trong cht bn dn l:
J = J kt + J tr
Chng II: Linh kin th ng
Chng II
cc linh kin th ng
Trng thi in ca mt phn t c th hin qua hai thng s trng thi l in
p u gia 2 u v dng in i chy qua n, khi phn t t n to c cc thng s ny
th n c gi l phn t tch cc (c th ng vai tr nh mt ngun in p hay
ngun dng in). Ngc li, phn t khng t to c in p hay dng in trn n
th cn phi c nui t mt ngun sc in ng bn ngoi. Ngi ta gi l cc
phn t th ng, c th trong mch in v thit b in t l in tr, t in v cun
dy. Chng ny s cp n mt s tnh cht quan trng ca cc loi linh kin .
I. in tr (Resistor)
1 - nh ngha v k hiu
a - nh ngha
in tr l linh kin dng ngn cn dng in trong mch. Ni mt cch khc
l n iu khin mc dng v in p trong mch.
t c mt gi tr dng in mong mun ti mt im no ca mch in
hay gi tr in p mong mun gia hai im ca mch ngi ta phi dng in tr c
gi tr thch hp. Tc dng ca in tr khng khc nhau trong mch in mt chiu v
c mch xoay chiu, ngha l ch lm vic ca in tr khng ph thuc vo tn s
ca tn hiu tc ng ln n.
Hu ht in tr u lm t cht cch in v n c mt hu khp cc mch in.
C th xc nh gi tr in tr theo nh lut Ohm nh sau:
U
[]
Trong ch tnh:
R=
I
U
u
hay
Trong ch tn hiu nh: r =
gi l in tr vi phn
I
i
Vi U: st p trn in tr [V]
I : dng in chy qua in tr [A]
Cc gi tr ca R thng l : m, ,k , M ,G.
in tr dn c dng mt chiu v xoay chiu. in p v dng in trn in tr
thun c lch pha bng 0 (cng pha).
b - K hiu ca in tr trong m ch in
in tr thng
in tr bin i
1/8 W
1/4 W
1/2 W
1W
5W
10 W
in tr
cng sut
Hnh dng thc t:
c - Cu trc ca in tr
in tr c nhiu dng kt cu khc nhau tu theo loi nhng ni chung c th
biu din cu trc tng qut ca mt in tr nh sau:
Vt liu cn in
M chp v chn
V bc
Li
2 - Cc tham s k thut c trng cho in tr.

Khi s dng mt in tr th cc tham s cn quan tm l: gi tr in tr tnh
bng Ohm ( ); sai s hay dung sai l mc thay i tng i ca gi tr thc so vi gi
tr sn xut danh nh ghi trn n tnh theo phn trm (%); cng sut ti a cho php
tnh bng oat (W) v i khi c tham s v c im cu to v loi vt liu c dng
ch to in tr.
a - Tr s in tr v dung sai
Tr s ca in tr l tham s c bn, yu cu i vi tr s l t thay i theo nhit

, m , thi gian N c trng cho kh nng cn in ca in tr.
Tr s ca in tr ph thuc vo vt liu cn in, kch thc ca in tr v nhit
mi trng.
l
Cng thc:
R = .
S
Trong :
: in tr sut ca vt liu cn in [m]
l: chiu di dy dn
[m]
S: tit din dy dn
[m2]
Dung sai (sai s) biu th mc chnh lch tr s thc t ca in tr so vi tr s
danh nh v c tnh theo %.
R Rdd
Dung sai c tnh : tt
.100%
Rdd
Vi Rtt v Rdd l gi tr in tr thc t v danh nh
Da vo ngi ta sn xut in tr theo 5 cp chnh xc
Dng trong mch yu cu
Cp 005 : c sai s 0.5%
Cp 001 : c sai s 0.1%
chnh xc cao
Cp I : c sai s 5%
Dng trong k thut
Cp II : c sai s 10%
mch in t thng thng
Cp III : c sai s 20%
b - Cng sut tiu tn cho php (Ptt max)
Khi c dng in chy qua in tr s tiu tn nng lng in di dng nhit,
vi cng sut l:
U2
Ptt =
= I 2 .R [W]
R
Tu theo vt liu cn in c dng m in tr ch chu c ti mt nhit
no . V vy s W chnh l thng s cho bit kh nng chu nhit ca in tr.
Cng sut tiu tn cho php l cng sut in cao nht m in tr c th chu
ng c, nu qu ngng th in tr s nng ln v c th b chy.
2
U
2
Ptt max = max = I max .R
R
in tr lm vic bnh thng th:
Ptt < Ptt max
Thng thng ngi ta s chn cng sut ca in tr theo cng thc:
PR 2Ptt
Trong 2 l h s an ton. Trng hp c bit c th chn h s an ton ln hn.
in tr than c cng sut tiu tn thp trong khong 0.125; 0.25; 0.5;1.2W
in tr dy qun c cng sut tiu tn t 1W tr ln v cng sut cng ln th
yu cu in tr c kch thc cng to ( tng kh nng to nhit).
Trong tt c cc mch in, ti khu vc cp ngun tp trung dng mnh nn cc
in tr phi c kch thc ln. Ngc li, ti khu vc x l tn hiu, ni c dng yu
nn cc in tr c kch thc nh b.
30
Cu kin in t

c - H s nhit ca in tr: TCR (temperature co-efficient of resistor)
H s nhit ca in tr biu th s thay i tr s ca in tr theo nhit mi
trng v c tnh theo cng thc:
1 R
TCR = .
.100% [ppm/0C]
R T
R: lng thay i ca tr s in tr khi nhit thay i mt lng T.
TCR l tr s bin i tng i tnh theo phn triu ca in tr trn 1C. TCR
cng b tc n nh nhit cng cao.
in tr than lm vic n nh nht nhit 20C. Khi nhit tng hay gim
th tr s ca in tr than u tng.
in tr dy cun c s thay i in tr theo nhit nh cht dn in thng
thng, ngha l tr s ca in tr tng gim theo s gim tngca nhit .
C th tnh s thay i ca tr s in tr theo TCR v T nh sau:
R
R = 6 .TCR.T [ ]
10
TCR cng nh cng tt. TCR 0 th ngi ta thng dng vt liu cn in
c 0.5m v c h s nhit ca in tr ````nh.
V d: Bt than nn, mng than tinh th, mng kim loi (Ni Cr), mng oxit kim loi
d - Tp m ca in tr
C 2 loi tp m l tp m xo ng nhit v tp m dngin.
+ Tp m xo ng nhit l loi tp m chung cho tt c cc tr khng, tr tnh
di nh hng ca nhit .
+ Tp m dng in l do cc thay i bn trong ca in tr khi c dng in
chy qua n.
Mc tp m ch yu ph thuc vo vt liu cn in.
Bt than nn c mc tp m cao nht.
Mng kim loi v dy qun c mc tp m thp nht.
3 - Cch ghi v c tham s trn thn in tr
Trn thn in tr thng ghi cc tham s c trng tin cho vic s dng, nh
l: tr s in tr, dung sai, cng sut tiu tn (nu c). C th ghi trc tip trn thn
in tr hoc theo qui c.
a - Cch ghi trc tip
Nu thn in tr ln (v d nh in tr dy qun) th ngi ta ghi y gi
tr v n v o
V d: 220K 1W
(in tr c tr s 220, dung sai 10%, cng sut tiu tn cho php l 1W).
b - Ghi theo qui c
Khng ghi n v Ohm. Quy c nh sau:
+ Cc ch ci biu th n v: R (hoc E) = ; M = M;
+ V tr ca ch ci biu th du thp phn
K = K.

+ Ch s cui biu th h s nhn
V d: 6R8 = 6.8
R3
= 0.3
K47 = 0.47K
150
= 150
2M2 = 2.2M
4R7 = 4E7 = 4.7
332R = 33.100
Qui c theo m
Gm cc s ch th tr s (ch s cui ch h s nhn hay s s 0 thm vo) v
ch ci ch % dung sai.
F = 1%; G = 2%; J = 5%; K = 10%; M =20%
V d: 681J = 680
5%
10%
153K = 15000
4703G = 470 K
2%
Qui c mu
Khi cc in tr c kch thc nh (v d nh in tr than) th ngi ta khng th
ghi s v ch ln c. Ngi ta s dng cc vch mu ghi tham s. C 2 loi vng
mu l loi 4 mu v 5 mu.
4vng mu
Hai vng u ch s c ngha thc
Vng ba ch s s 0 thm vo
Vng bn ch dung sai
5 vng mu
Ba vng u ch s c ngha thc
Vng bn ch s s 0 thm vo
Vng nm ch dung sai
Bng quy c mu cho in tr
Tr s
thc
Mu
Vch 1,2
(3)
en
0
Nu
1
2
Cam
3
Vng
4
Lc
5
Lam
6
Tm
7
Xm
8
Trng
9
32
H s
nhn
Vch 3 (4)
100
101
102
103
104
105
106
107
108
109
Dung sai
Vch 4 (5)
1%
2%
-
Cu kin in t
Vng kim
Bch kim

10
5%
10-2
10%
-1
Ch :
+ Vng 1 l vng gn u in tr hn vng cui cng. Tuy nhin, c nhiu in
tr c kch thc nh nn kh phn bit u no gn u in tr hn, khi ta xem
vng no c trng nh th vng l vng cui. Nn in tr ra xa v quan st
bng mt, khi ta s khng nhn thy vng trng nh, ngha l d dng nhn ra c
vng no l vng 1.
+ Trng hp ch c 3 vng mu th sai s l 20%
+ Ngi ta khng ch to in tr c cc tr s t nh nht n ln nht m ch
ch to in tr c tr s theo tiu chun (xem bng di y). Do vy nu cn nhng
gi tr c bit phi chn gi tr gn trong bng nht hoc phi u ni kt hp nhiu
in tr vi nhau c gi tr thch hp.
Bng cc gi tr sn xut thc ca in tr
M
<10
K
0,33
10
180
1
18,0
0,27
6,5
0,5
12
220
1,2
22,0
0,33
8,2
1
1,5
15
18
270
330
1,5
1,8
27,0
33,0
0,39
0,47
10,0
12,0
2
3
22
27
390
470
2,2
2,7
39,0
47,0
0,56
0,68
15,0
18,0
3,3
33
560
3,3
56,0
0,82
22,0
3,9
4
39
47
680
820
3,9
4,7
68,0
82,0
1,0
1,2
4,7
5
56
68
5,6
6,8
100
120
1,8
2,2
5,6
82
8,2
150
2,7
6
6,5
100
120
10,0
12,0
180
220
3,3
4,7
150
15,0
5,6
4. Cc kiu mc in tr
a. Mc ni tip
Gi s mc 3 in tr ni tip nhau nh hnh v, khi 3 in tr ny s tng
ng vi 1 in tr Rtd.
a
R1
R2
R3
Rtd
Khi s dng in tr th cn quan tm ti hai thng s k thut l tr s in tr R

v cng sut tiu tn P ca n. Bng cch mc ni tip nhiu in tr ta s c in tr

tng ng c tham s nh sau:
Rtd
= R1 + R2 + R3
(1)
P
= P1 + P2 + P3
Nh vy cch ghp ni tip s lm tng tr s in tr v tng cng sut tiu tn.
b. Mc song song
Gi s mc 3 in tr song song, khi coi nh ta c 1 in tr tng ng Rtd
a
Rtd
a
R1
R2
R3
Rtd c tr s in tr v cng sut tiu tn nh sau:

1
1
1
1
=
+
+
(2)
Rtd R1 R 2 R3
P = P1 + P2 + P3
Nh vy cch ghp song song lm tng cng sut tiu tn nhng lm gim tr s
in tr.
Nu mc in tr kiu hn hp (va ni tip, va song song) th ta tnh in tr
tng ng theo cc cng thc (1) v (2) cn cng sut tiu tn th bng tng cng sut
tiu tn ca cc in tr thnh phn.
Ch : Khi ghp ni in tr nn chn loi c cng cng sut nhit trnh hin tng
c mt in tr chu nhit ln. Khi thay th in tr cng cn phi thay bng in tr
khng ch cng tr s m cn phi cng cng sut nhit.
5 - Phn loi v ng dng ca in tr
a - Phn loi
C nhiu cch phn loi in tr. Thng thng ngi ta chia thnh 2 loi l in
tr c tr s c nh v in tr c tr s bin i (bin tr).
Trong mi loi li c chia nh hn theo nhng ch tiu khc nhau
in tr c tr s c nh thng c phn loi:
+ Theo vt liu cn in
1. in tr than p dng thanh hoc tr ch to t bt than (cacbon, cht dn in rt tt)
trn vi cht lin kt (thng l pheno, cht khng dn in). Nung nng lm ho th
rn hn hp trn theo dng hnh tr v c bo v bng mt lp v giy ph gm hay
lp sn. Tr khng ca sn phm cui cng ph thuc vo t l ca cacbon so vi cht
khng dn in cng nh khong cch gia cc u dy. in tr hp cht carbon c
n nh cao, l loi in tr ph bin nht, c cng sut danh nh t 1/8W n 1W hoc
2W. Loi in tr ny c tr s c th rt nh hoc rt ln, gi tr t 10 n 20M .
Mt khc, n mang tnh thun tr, cc yu t in dung cng nh in cm hu nh
34
Cu kin in t

khng ng k. iu ny lm cho in tr hp cht carbon c s dng rng ri trong
cc b x l tn hiu radio.
3. in tr mng kim loi (cn gi l in tr dng phim film resistor) ch to theo
cch kt lng mng Ni-Cr trn thn gm c x rnh xon sau ph lp sn, loi ny c
n nh cao hn loi than nhng gi thnh cng cao hn vi ln.
4. in tr oxit kim loi: kt lng mng oxit thic trn thanh SiO2, c kh nng chng
nhit v chng m tt, cng sut danh nh 1/2W
5. in tr dy qun thng dng khi yu cu gi tr in tr rt thp, chu dng ln v
cng sut t 1W n 25W (trng hp c bit chng chnh l b t nng bng in v
c cng sut ln ti hng ngn oat). N c cu to bng cch s dng mt on dy
dn lm t cht khng dn in tt, v d nh nicrome. Dy dn s qun quanh mt vt
hnh tr ging nh mt cun dy (nn cn c gi l in tr cun dy). Tr khng khi
ph thuc vo vt liu lm dy dn, ng knh v chiu di dy dn. Nhc im
chnh ca in tr loi ny l n hot ng nh mt b cm ng in t, ngha l khng
ph hp vi cc mch tn s cao.
6. in tr mch tch hp l cc in tr c ch to ngay trn mt
chip bn dn to thnh mt IC. di, loi vt liu v tp trung ca
cc cht pha trn thm vo s quyt nh gi tr ca in tr.
+ Theo cng dng
Loi chnh xc
Loi bn chnh xc
Loi a dng
Loi cng sut
in tr c tr s thay i (bin tr VR Variable Resistor) c k hiu, hnh
dng v cu to nh hnh di y.
con trt
1 2 3
Trong nhiu trng hp khi mun thay i gi tr tr khng mt cch linh hot v
thun tin ngi ta phi s dng cc linh kin c tr khng thay i, s thay i ny ph
thuc vo v tr ca con trt (gi l potentionmeter)
Bin tr cn c gi l chit p c cu to gm mt in tr mng than hay
dy qun c dng hnh cung gc quay 2700. Chit p c mt trc xoay gia ni vi
mt con trt lm bng than (cho bin tr dy qun) hay lm bng kim loi cho bin tr

than, con trt s p ln mt in tr to kiu ni tip xc lm thay i tr s in tr
khi xoay trc.
Bin tr dy qun l loi bin tr tuyn tnh c tr s in tr t l vi gc xoay.
Bin tr than l loi bin tr phi tuyn c tr s in tr thay i theo hm logarit vi
gc xoay (tc l ban u tng nhanh sau con chy cng dch ra xa gi tr in tr s cng
tng chm li). Loi than c cng sut danh nh thp t 1/4 1/2 W vi gi tr in
hnh: 100, 220, 470, 1K, 2.2K, 4.7K, 10K, 22K, 47K, 100K, 220K, 470K, 1M, 2.2M v
4.7M. Loi dy qun c cng sut danh nh cao hn t 1W n 3W vi cc gi tr in
hnh: 10, 20, 47, 100, 220, 470, 1K, 2.2K, 4.7K, 10K, 22K v 47K.
C 3 loi bin tr: a dng, chnh xc v iu chun (loi ny cn gi l trim, n
khng c trc xoay m phi iu chnh bng ci vn vit vi chnh xc rt cao)
b - ng dng ca in tr
Trong sinh hot, in tr c dng
ch to cc loi dng c in nh bn
l, bp in, bng n si t
Trong cng nghip, in tr c dng ch to cc thit b sy, si, gii hn
dng in khi ng ca ng c
Trong lnh vc in t, in tr c s dng gii hn dng in, to st p,
phn p, nh hng s thi gian, phi hp tr khng, tiu th nng lng
c - Mt s in tr c bit
+ in tr nhit (Th Thermistor)
L mt linh kin c tr s in tr thay i theo nhit . C 2 loi nhit tr l
nhit tr m v nhit tr dng. Tr s ca nhit tr ghi trong s l tr s o c
250 C.
K hiu v hnh dng ca nhit tr:
Nhit tr c h s nhit dng l loi in tr khi nhn nhit cao hn th tr s
t0
t0
ca n tng ln v ngc li. Nu nhit tr lm bng vt liu kim loi th n c h s

nhit dng. iu ny c gii thch l khi nhit tng cc nguyn t cc nt mng
s dao ng mnh v lm cn tr qu trnh di chuyn ca in t.
Nhit tr c h s nhit m l loi nhit tr khi nhn nhit cao hn th in tr
ca n gim xung v ngc li khi nhit thp hn th in tr ca n tng ln.
Cc cht bn dn thng c hiu ng nhit m (NTC). Trong cht bn dn khng
ch c vn tc ca ht dn, m quan trng hn, c s lng ht dn cng thay i theo
nhit . Ti nhit thp, cc in t v l trng khng nng lng nhy t vng
ho tr ln vng dn. Khi tng nhit khin cc ht dn nng lng vt qua
vng cm, bi th dn s gia tng cng vi nhit . Ni cch khc khi nhit tng
th tr khng cht bn dn gim. Vi cc cht NTC th quan h gia in tr v nhit
theo lut:
36
Cu kin in t
R1
= e B.(1 / T 11 / T 2)
R2
trong :
B = Eg / K l h s nhit tr
R1 ; R2 l in tr cht bn dn ti nhit T1 v T2.
Eg l rng vng cm.
K l hng s Boltzmann.
Bin i cng thc trn ta c:
ln( R1 / R2 )
B=
1 / T1 1 / T 2
Hnh trn th hin s ph thuc ca in tr vo nhit
ca cht NTC vi cc gi tr khc nhau ca R.
Tuy nhin, cc cht nhy cm nhit c th c hiu ng nhit dng, bi th
chng c gi l cc cht PTC.
Nhit tr thng c s dng n nh nhit cho cc mch ca thit b in t
(c bit l tng khuch i cng sut) iu chnh nhit hay lm linh kin cm
bin trong cc h thng t ng iu khin theo nhit .
V d: Trong cc b ampli, khi hot ng lu cc s cng sut s nng ln, nh s dng
nhit tr m s thay i ca nhit c th hin s thay i ca tr s in tr lm
cho dng in qua s cng sut yu i, tc l bt nng hn.
+ in tr tu p (VDR Voltage Dependent Resistor)
VDR cn gi l varistor l mt linh kin bn dn c tr s in tr thay i khi
in p t ln n thay i.
K hiu v hnh dng ca VDR nh hnh sau:
Khi in p gia hai cc di tr s quy nh th VDR c tr s in tr rt ln
VDR
VDR
coi nh h mch. Khi in p ny tng ln th VDR s c tr s gim xung n nh

in p hai u n. Gi tr in p m VDR n nh c cho trc bi nh sn xut,
y chnh l thng s c trng cho VDR.
VDR thng c mc song song vi cc cun dy c h s t cm ln dp tt
cc in p cm ng qu cao khi cun dy b mt dng in t ngt trnh lm hng cc
linh kin trong mch.
+ in tr quang (Photo Resistor)
in tr quang hay cn gi l quang tr l thit b bn dn nhy cm vi bc x
in t quanh ph nh sng nhn thy (c bc sng t 380 v 780 nm).
Quang tr c to nn t mt lp vt liu bn dn mng, thng l CdS (Cadmi
sulfua). Bc x nh sng ngu nhin s truyn mt phn nng lng ca n cho cc cp
in t-l trng, cc cp ny c th t mc nng lng ln nhy ln vng dn.
Kt qu hnh thnh nhiu cp ht dn t do, khin dn tng v tr khng gim. S
lng cc ht dn to ra s t l vi cng bc x nh sng. chiu sng cng

mnh th in tr c tr s cng nh v ngc li. Khi quang tr b che ti in tr ca
n khong vi trm K n vi M. Khi c chiu sng th gi tr in tr ny khong
vi trm n vi K.
Trong ng dng thc t mt in p ngoi s c u vo cc cc ca quang tr.
Cho nh sng chiu vo, khi dng c th chy qua quang tr v chy trong mch
ngoi vi cng tu thuc vo cng sng.
Quang tr thng c s dng trong cc mch t ng iu khin bng nh sng
nh: pht hin ngi qua ca, t ng m n khi tri ti, iu chnh sng v nt
t ng mn hnh LCD, camera
(cc thng s c th ca quang tr xem chi tit chng 4 Linh kin quang in t)
II. T in (capacitor)
T in l phn t c gi tr dng in i qua n t l vi tc bin i in p u
trn n theo thi gian vi cng thc:
du
i=C
dt
T in dng tch v phng in.
1. K hiu v cu to ca t in
a. K hiu v hnh dng ca t in
T thng
(T khng
phn cc)
T phn cc
C
+ -
38
Cu kin in t

T bin i
b. Cu to
T thng
V cu to, t khng phn cc gm cc l kim loi
Bn cc
xen k vi cc l lm bng cht cch in gi l cht in
mi. Tn ca t c t theo tn cht in mi nh t
giy, t gm, t mica, t du
Chn t
Gi tr ca t thng c in dung t 1,8pF ti 1F,
khi gi tr in dung ln hn th kch thc ca t kh ln
nn khi ch to loi phn cc tnh s gim c kch
Cht in mi
thc i mt cch ng k.
T in phn
T in phn c cu to gm 2 in cc tch ri nhau nh mt mng mng cht
in phn, khi c mt in p tc ng ln hai in cc s xut hin mt mng oxit kim
loi khng dn in ng vai tr nh lp in mi. Lp in mi cng mng kch thc
ca t cng nh m in dung li cng ln. y l loi t c cc tnh c xc nh v
nh du trn thn t, nu ni ngc cc tnh lp
in mi c th b ph hu v lm hng t (n t),
Cc dng
loi ny d b r in do lng in phn cn d.
Cc m
V d: T ho c cu to c bit, v ngoi bng

nhm lm cc m, bn trong v nhm c thi
kim loi (ng hoc nhm) lm cc dng. Gia
cc dng v cc m l cht in phn bng ho
cht (thng l axitboric) nn gi l t ho.
Nt bt cao su
V kim
Thi kim loi
Cht in mi
2. c tnh np v x in ca t
T in hot ng da trn nguyn tc np v x in c minh ho trong hnh
di y:
C
VDC
VDC
R
T np in (hnh bn tri)
Khi kho K v tr 1 t c np in vi bn cc pha trn mang in tch dng,
bn cc pha di mang in tch m. in p trn t tng dn t 0 V n in p ngun

VDC theo hm m vi thi gian t. in p tc thi trn hai bn t c tnh theo cng
thc :
vC (t ) = VDC (1 e )
trong :
t : thi gian t np, n v l giy (s)

e = 2,71828
=RC l hng s thi gian np ca t, n v l giy (s)
Sau khong thi gian t = t np c 0,63VDC v sau t = 5 t np c
0,99VDC v coi nh t c np y.
Trong khi in p trn t tng theo hm m nh phn tch trn th dng in np
cho t li gim dn t tr s cc i ban u I =
VDC
xung tr s cui cng l 0A.
R
Dng in np tc thi c tnh theo cng thc:

t
V
iC (t ) = DC .e
R
T x in (hnh bn phi)
Sau khi t c np y, in p trn t l VC VDC , chuyn kho K sang v tr 2
t x in qua in tr R, dng v p trn t gim dn t gi tr ln nht v 0 theo hm
m vi thi gian (nu s dng bng n thay cho in tr R s thy bng n sng ln
v yu dn ri tt hn). Dng in do t x chnh l nh nng lng c np trong
t. Nng lng ny c tnh theo cng thc :
1
W = C.V 2
2
vi
W : in nng tnh bng Jun (J)
C : in dung ca t tnh bng Fara (F)
V: in p trn t tnh bng Vn (V)
in p v dng in tc thi trn t c tnh theo cng thc:
vC (t ) = VDC .e
V
iC (t ) = DC .e
R
Sau mt khong thi gian t = t x, in p trn t cn 0,37VDC v khi

t = 5 coi nh t x ht, in p trn t bng 0
3. c tnh ca t in i vi dng in xoay chiu
i vi t in, in tch t np c tnh theo cng thc:
Q = C. V = I . t
V=
1
.I .t
C
Nh vy in p trn t chnh l s tch t ca dng in np vo t theo thi gian
40
Cu kin in t

t (trong ton hc biu din bi php tnh tch phn). Mt cch tng qut c th vit nh
sau:
1 t
vC (t ) = . i (t ).dt
C 0
Nu dng in c dng xoay chiu hnh sin c tr s tc thi l:
i(t) = Im.sin(wt)
vC(t) =
1
.I m .sin( wt 90) =Vm.sin(wt-90)
wC
Ngha l, in p trn t cng l mt tr s thay i theo dng in nhng tr pha

i 900.
Ngoi ra, nu p dng nh lut Ohm cho t ta c:
Vm =
Nh vy,
V
1
1
.I m m =
I m wC
wC
1
c ngha nh l in tr, i vi t in ngi ta gi l dung
wC
khng v k hiu l XC
XC =
1
1
=
wC 2 . f .C
n v tnh l Ohm ()
4. Cc tham s c bn ca t in
a. Tr s in dung v dung sai
c trng cho kh nng np, x in ca t t hay nhiu ngi ta a ra khi
nim in dung (dung lng in) c lng.
in dung ca t c tnh theo cng thc:
S
C = .
[F]
d
vi l hng s in mi ca cht cch in
S l din tch hiu dng ca bn cc [m2]
d l khong cch gia hai bn cc [m]
Hng s in mi ca mt s cht cch in thng dng lm t in c tr s
nh sau:
=1
Khng kh kh
Parafin
=2
Nha ebonit
= 2,7 2,9
Giy tm du
= 3,6
Gm
= 5,5
Mica
=45
Tr s ca in dung c tnh bng F (fara) nhng trn thc t n v ny rt ln
nn khng s dng m thng dng c s ca fara
Microfara
1 F = 10-6 F

Nanofara
1 nF = 10-9 F
Picofara
1 pF = 10-12 F
Dung sai ca t in biu th chnh xc ca tr s in dung thc t so vi gi
tr in dung danh nh ca t in v c tnh bng:
C tt C dd
100%
C dd
Tu theo yu cu ca mch m cn t c chnh xc tng ng, c t c dung
sai 0,001% nhng cng c t c dung sai 150%. Vi t s dng trong k thut in t
thng thng th t c dung sai t 5 20%
b. Tr khng ca t in
T in l mt linh kin c tc dng ngn dng mt chiu chy qua n ( trng
thi xc lp n nh). Tr khng ca t in c xc nh mt cch tng qut nh sau:
ZC =
vi
1
1
= .X C
j 2f .C j
f l tn s ca tn hiu xoay chiu tc dng ln t

XC =
1
gi l dung khng ca t
2fC
Nhn xt:
+ T in khng cho thnh phn mt chiu qua
+ Khi tn s tn hiu tc ng ln t cng tng, tr khng ca t cng gim. Ngha
l, tn hiu tn s cng cao cng d qua t. Hn na, t c tr s in dung cng ln cng
d cho tn hiu tn s thp qua.
c. in p lm vic
Khi np in cho t tc l t vo cc
chn t mt in p, ngi ta gi in p lm
vic ca t chnh l in p mt chiu ln nht
m t c th chu c, tc l nu qu gi tr
Bn
ny th t b n (nn cn gi l in p nh
cc
thng).
iu ny c gii thch nh sau: khi t
vo t mt in p ln th s sinh ra mt lc
in trng mnh lm cho cc in t trong
nguyn t cht in mi b bc x thnh cc in t t do v s c dng in chy qua
cht in mi, lc ny cht in mi b nh thng. Do vy khi s dng t in np
v x in th cn chn t c in p nh thng ln hn in p t vo t vi ln.
in p nh thng ca in mi ph thuc vo tnh cht ca lp in mi v b
dy ca n nn cc t chu c in p ln thng l t c kch thc ln v lm bng
cht in mi tt (v d nh mica, gm hay ebonit)
d. H s nhit
Mi loi t ch lm vic trong mt mi trng lm vic c di nhit nht nh.
V d: -200C - +650C
42
Cu kin in t

-400C - +650C
-550C - +1250C
Tng t nh vi in tr ngi ta dng h s nhit TCC nh gi s bin i
ca tr s in dung khi nhit thay i
1 C
TCC = .
.10 6 [ppm/0C]
C T
C l lng tng gim ca in dung khi nhit thay i mt lng T
TCC cng nh cng tt v khi gi tr in dung C s cng n nh
e. Dng in r
Dng in r l dng chy qua gia 2 bn cc ca t in, n ph thuc vo in
tr cch in ca cht in mi.
Khi t mt in p ln t th dung khng ca t c tnh bng:
1
XC =
vi f [Hz] l tn s ca in p t ln t
2fC
Nh vy dung khng ca t ph thuc vo tn s v gim khi tn s tng, i vi
thnh phn mt chiu (f=0) c th coi dung khng ca t l ln v cng, ngha l khng
c dng r nhng trn thc t, thnh phn ny lun tn ti v ph thuc nhiu vo nhit
.
T in gii c dng r ln nht (c vi mA khi in p t ln t ln hn 10V).
T in mica v t gm c dng r nh nht.
5. Cch ghi v c tham s trn t in
Cc tham s ghi trn thn t in l in dung (c km theo dung sai) v in p
lm vic.
C hai cch ghi l ghi trc tip v ghi theo quy c.
a. Cch ghi trc tip
Cch ghi ny p dng cho t c kch thc ln nh t ho, t mica
V d: trn thn t ho c ghi 100 F, 50V, +850C ngha l t c in dung 100 F, in
p mt chiu ln nht m t chu c l 50V v nhit cao nht m n khng b hng
l 850C.
b. Cch ghi theo quy c
Cch ghi ny dng cho t c kch thc nh, gm cc s v ch vi mt s kiu
quy c nh sau:
Vi loi t k hiu bng 3 ch s v 1 ch ci
+ n v l pF
+ Ch s cui cng ch s s 0 thm vo

+ Ch ci ch dung sai
Bng ngha ca ch s th 3
Ch s
H s nhn
0
1
2
3
4
5
6
7
8
9
1
10
100
1000
10.000
100.000
Khng s dng
Khng s dng
0,01
0,1
Bng quy c dung sai cho ch ci cui cng

Ch
ci
Dung sai
Ch
ci
+/- 0.10%
+/- 5%
+/- 0.25%
+/- 10%
+/- 0.5%
+/- 20%
+/- 0.5%
+/- 0.05%
+/- 1%
+100% ,-0%
+/- 2%
+80%, -20%
+/- 3%
Dung sai
v d:
Cch ghi
0.047
200 VDC
2.2 / 35
ngha
T c in dung 0,047 F, in p mt chiu ln nht
m t chu c l 200 V (t mng mng)
T c in dung 2,2 F, in p chu ng l 35V (t
tantan)
102J
T c in dung 1000 pF = 1 nF, dung sai 5%
.22K
T c in dung 0,22 F, dung sai 10%
474F
T c in dung 0,47 F, dung sai 1%
Trong k thut in t thng thng t in thng c dung sai t
5% n 20%
Ghi theo quy c vch mu (gn ging nh in tr)
44
TCC
1
2
3
4
2
3
4
5
Cu kin in t

Loi 4 vch mu
Vch 1, 2 l s thc c ngha
Vch 3 l ch s s 0 thm vo (vi n v pF)
Vch 4 ch in p lm vic
Loi 5 vch mu
Vch 1, 2 l s thc c ngha
Vch 3 l ch s s 0 thm vo (vi n v pF)
Vch 4 ch dung sai
Vch 5 ch in p lm vic
Bng quy c mu cho t in
Tr s
Mu
H s nhn
thc
en
0
100
Nu
1
101
2
102
Cam
3
103
Vng
4
104
Lc
5
105
Lam
6
106
Tm
7
107
Xm
8
108
Trng
9
109
Vng kim
10-1
Bch kim
10-2
Hng
Bng m mu TCC
Mu
TCC [ppm/0C]
en
0
75
tm
100
Cam
150
Dung sai
1%
2%
0,5%
0,2%
0,1%
+ 5%, -20%
5%
10%
Mu
Vng
Xanh l cy
Xanh lam
Tm
in p lm vic [V]
Nhm
Tantan
10
100
250
400
6,3
16
630
20
25
3
35
TCC [ppm/0C]
220
330
430
750
Tng t nh in tr, t in ch c sn xut vi cc tr s in dung tiu

chun vi cc s th nht v th 2 nh sau:
10
12
15
18
22
27
33
39
47
56
68
75
82

Do vy c tr s in dung mong mun cn mc t theo kiu ni tip, song
song hay hn hp.
6. Cc kiu ghp t
a. T in ghp ni tip
C2
+
Ctd
+
Khi ghp cc t ni tip ta s c tr s

C1
in dung v in p lm vic ca t tng
+
ng nh sau:
1
1
1
=
+
Ctd C1 C 2
U = U1 +U2
Nh vy ghp ni tip t in s lm
tng in p lm vic nhng lm gim tr s in dung.
b. T in mc song song
C2
+
Ctd
V
+
C1
Cng thc tnh in dung v in p lm vic ca t tng ng nh sau:

Ctd = C1 + C2
U = min (U1, U2)
Nh vy ghp song song cho lm tng gi tr in dung cn in p lm vic bng
in p lm vic nh nht ca cc t thnh phn (do nn chn cc t c in p lm
vic bng nhau nu ghp song song).
7. Phn loi t in
Ngi ta thng phn loi t in thnh loi t c tr s khng i v t c tr s
bin i. Trong cc loi t ny ngi ta li tip tc phn chia theo cht in mi lm t
.
T c tr s in dung khng i
a. T oxit ho (gi tt l t ho)
K hiu v hnh dng ca t ho

C
+
T ho (hay cn gi l t in phn, t in gii) c in dung ln t 1 F n

10.000 F l loi t c phn loi cc tnh dng v m, in p lm vic nh hn
500V.
46
Cu kin in t

T ho c ch to vi bn cc nhm v b mt cc dng c mt lp oxit nhm
v lp bt kh c c tnh cch in lm cht in mi. Do lp oxit nhm rt mng
nn in dung ca t ln v in p nh thng nh. T c kch thc cng ln th in
dung cng ln. Khi s dng t cn ch cc tnh ca t trnh lm hng t. Do c
kch thc ln nn cc gi tr in dung, in p lm vic, nhit , nh du cc tnh
u c ghi rt r rng trn thn t ho.
Do c in dung ln nn t ho thng c s dng lm t san phng in p
trong cc mch ngun (t c in dung cng ln cng tt) hay t lc khu vc tn s thp.
b. T gm (ceramic)
T gm c in dung t 1 pF n 1 F l loi t khng c cc tnh v in p lm
vic ln n vi trm vn nhng dng in r kh ln. T gm c thng c dng a,
dng phin, n khi hoc dng ng.
T gm c cu to bng cch lng ng mng kim loi trn hai mt ca mt a
K hiu v hnh dng ca t gm

C
gm mng. Dy dn ni ti mng kim loi v tt c c bc trong v cht do. V hnh

dng t gm c nhiu dng v nhiu cch ghi tr s khc nhau.
T gm thng c s dng ni tt tn hiu cao tn xung t. Do tnh n
nh khng cao, gy nhiu cho tn hiu nn t gm khng c dng cho cc mch gia
cng tn hiu tng t.
c. T giy
T giy l loi t khng c cc tnh gm c hai bn cc l cc bng kim loi di,
gia c lp cch in l giy tm du v cun li thnh ng. in p lm vic ca t
giy c th ln ti 1000V vi gi tr in dung t 0,001F 0,1F. Loi t ny cng
ngy cng t c s dng do kch thc ln.
K hiu v hnh dng ca t giy
0.47
160VDC
d. T mica
T mica trng bc l loi t khng c cc tnh, in dung t 2,2pF - 10nF, in p
lm vic rt cao, trn 1000V.
K hiu v hnh dng ca t mica
T mica c cu to t cc l kim loi t xen k vi cc l mica, mt chn t l

dy ni cc l kim loi chn v chn t kia l dy dn ni cc l kim loi l, tt c c
bc trong v cht do. Thng thng ngi ta dng phng php lng ng kim loi ln
cc lp mica tng h s phm cht ca t.
T mica t tin hn t gm v t sai s, p tuyn tn s cao tt, bn cao. Cch
ghi v c thng s ca t mica ging nh t gm nhng vi mt s loi kch thc qu
nh th ngi ta s dng cc chm mu ghi tr s in dung v c nh in tr.
e. T mng mng
L loi t khng c cc tnh c cht in dung l polyeste, polyetylen, polystyrene
hay polypropylene . T mng mng c in dung t vi trm pF n vi chc F, in
p lm vic t hng trm n hng chc ngn vn.
K hiu v hnh dng ca t mng mng
f. T tantan
T tantan l loi t c phn bit cc tnh vi in cc lm bng tantan, in dung
ca t c th rt cao t 0,1 F n 100 F nhng kch thc cc nh. in p lm vic
ca t tantan thp ch vi chc vn.
K hiu v hnh dng ca t tantan
C
+
Xt v mt n nh nhit v c tuyn tn s khu vc tn s cao th t tantan tt
hn nhiu so vi t nhm, do vy vi cc mch yu cu n nh tr s in dung cao
48
Cu kin in t

th ngi ta phi s dng t tantan thay cho t nhm d t ny c t hn t nhm.
T c tr s in dung bin i
y l loi t m trong qu trnh lm vic ta c th iu chnh tr s in dung ca
chng.
g. T xoay
T xoay (hay cn gi l t a dng) c cu to bi 2 m kim loi t song song
vi nhau, trong c mt m tnh v mt m ng. Cht in mi c th l khng kh,
mica, gm hay mng cht do
K hiu v hnh dng ca t xoay
Khi xoay trc ca t xoay cc l ng s di chuyn gia cc l tnh lm thay

i tr s in dung ca t.
T xoay thng c s dng trong cc mch cng hng chn sng d knh
trong my thu thanh (vi in dung thay i t 0 n 270 pF).
h. T vi chnh (trimcap)
T vi chnh (hay cn gi l t iu chun) c cu to tng t nh t xoay nhng
kch thc nh hn rt nhiu, khng c nm vn iu chnh m ch c rnh iu chnh
bng tuoclovit.
K hiu v hnh dng ca trimcap
Tr s ca t vi chnh thng nh t 0 n vi chc pF. Loi t ny thng c

mc kt hp vi t xoay v dng ch yu cn chnh mch.
i. T ng trc chnh
y l loi t c mt l tnh v nhiu l ng cng gn trn mt trc, khi xoay
trc s cng lc thay i gi tr ca nhiu t. ng dng ny thng gp trong cc mch
chn i ca my radio, chn cng hng
K hiu v hnh dng thc t ca t ng trc chnh
8. Cc ng dng ca t in
a. T dn in tn s cao
Dung khng ca t c tnh theo cng thc
1
XC =
2fC
Nh vy dung khng ca t t l nghch vi tn s f ca dng in qua n. tn
s cng cao th dung khng XC cng nh nn dng in qua d dng, ngc li tn s
thp qua t kh hn v c th coi t chn thnh phn mt chiu (khi f = 0, XC = ).
Hn na, nu cng mt tn s th t c in dung ln s c dung khng nh hn t c
in dung nh.
Da vo c tnh dn in ph thuc vo tn s ngi ta s dng t cho cc mc
ch:
+ T lin lc: dn tn hiu xoay chiu ng thi chn thnh phn mt chiu qua
cc tng. (nu tn hiu xoay chiu tn s cao c th s dng c t phn cc v t thng
nhng nu tn hiu tn s thp th phi s dng t phn cc v loi t ny c in dung
ln)
+ T thot: dng loi b tn hiu khng cn thit (thng l tp m) xung t
+ T lc: dng trong cc mch lc phn chia di tn (lc thng cao, thng thp
hay lc di). Khi ny c th kt hp t vi in tr hoc vi cun dy to ra cc mch
lc th ng.
Di y l mt s v d v s mch lc th ng RC
50
Cu kin in t

+ T cng hng: dng trong cc mch cng hng LC bt tn hiu hay trit tn
hiu tn s cng hng ca mch.
C
V d: i vi tn hiu
m thanh th m bng
thuc loi tn s cao nn
tn hiu m bng s qua
c t a vo loa
bng cn m trm tn s
thp s b chn li v i
vo loa trm.
SPK1
8
AMPLI
Loa trm
SPK
8
Loa bng
b. T np x in trong mch lc ngun

Gi s c mch nn in s dng mt diode nh hnh v di y. Diode c tc
dng ch cho bn k dng ca dng in xoay chiu i qua v chn li bn k m.
Dng in qua ti s c dng l nhng bn k dng gin on (hnh a). Nu mc thm
t song song vi ti th t s np in bn k dng v x in bn k m, nh vy
nh c t m dng in qua ti c lin tc v gim bt h s p mch ca dng in
xoay chiu hnh sin (hnh b).
D1
DIODE
V1
-5/5V
R1
180
50 Hz
(a)
D2
DIODE
C1
220uF
V2
-5/5V
A
R2
180
50 Hz
(b)

III. Cun cm
Cun cm cng vi t in l hai loi linh kin chng li dng in xoay chiu
bng cch lu tr tm thi mt s lng in. Cun cm s lu tr mt lng in nh
mt t trng. Hot ng ca thnh phn ny gi l t cm.
Cc cun cm thng bao gm cc cun dy, i khi l mt on dy hay mt cp
dy. t cm c th c nhiu ni v tr nn ng quan tm khi tn s ca dng xoay
chiu tng ln. Phn ny chng ta s i su tm hiu cc c tnh v hot ng ca cun
cm dng cun dy.
1. Cu to v k hiu ca cun dy
Cun dy l mt dy dn in c bc bn ngoi lp sn cch in (thng c
gi l dy in t) qun nhiu vng lin tip trn mt li. Li c th c t tnh hoc
khng c t tnh (tng ng vi kh nng gia tng mt thng lng t hay khng)
Tu vo loi li m cun dy c k hiu nh sau:
Cun dy c li st l dng cho cc dng in xoay chiu tn s thp, li st bi

cho tn s cao v li khng kh cho tn s rt cao.
Hnh dng thc t ca cun dy
* To cm ng in t
Cun dy c dng to ra cm ng in t. Cho
dng in mt chiu cng I chy qua cun dy th
cun dy s tng ng nh mt nam chm vi cc tnh
c xc nh theo chiu dng in I chy trong cun dy
(quy tc vn nt chai), khi ta ni cun dy l mt
nam chm in.
Nu t thm mt cun dy th 2 di chuyn mt
cch tng i vi cun dy trn th trn cun th 2 ny
52
Cu kin in t

xut hin mt dng in, ngi ta ni c s cm ng in t truyn t cun 1 sang cun
2 v trn cun 2 c dng in cm ng. Tc dch chuyn cng nhanh th cm ng t
cng mnh.
Khi cho dng in xoay chiu cng i chy qua cun dy L1 th cun dy s
tng ng mt nam chm bin thin, do to ra t trng bin thin xung quanh n.
Nu t gn cun L1 mt cun dy L2 th 2 u cun dy L2 s xut hin dng in. Ta
ni rng c s cm ng v in t truyn t L1 sang L2. Nh vy tc dng ca dng
xoay chiu cng ging nh tc dng ca dng mt chiu vi iu kin cun dy phi di
chuyn, ngha l, t trng bin thin s sinh ra cm ng in t vi cun dy t trong
khu vc . Khi dng in i1 trn cun L1 v i2 trn cun L2 cng chiu th gi l cm
ng thun, ngc li gi l cm ng nghch. Sau khi xut hin dng in trn cun L2
th bn thn dng in ny cng s sinh ra mt t trng bin thin gy cm ng ngc
tr li cun L1, ngi ta gi l hin tng cm ng tng h hay h cm.
2. Cc tham s ca cun dy
a. H s t cm
Khi cun dy do nhiu vng dy qun li th r rng phi mt mt khong thi
gian nht nh dng in di chuyn dc theo dy v khi dng in chy quanh ton
b cun dy, t trng t n mc cc i. Nh vy, mt nng lng nht nh c
lu li trong cun dy. Kh nng ca cun dy lu nng lng bng cch ny l c
im ca t cm, vit tt bng L. t cm L l mt hm ph thuc vo s lng
vng dy, ng knh cun dy, chiu di ca cun dy v vt liu lm li.
+ Vi cun dy khng c li
Trong :
n2
L = 0 . .S
L: h s t cm [H]
l
l: chiu di li [m]
+ Vi cun dy c li
S: din tch li [m2]
n2
L = r 0 . .S
n: s vng dy
l
0: h s t thm ca chn khng
r: h s t thm tng i ca vt liu lm
-7
0 = 4.10
li i vi chn khng
Khi cho dng in I qua cun dy n vng s to ra t thng . tnh quan h
gia dng in I v t thng ngi ta a ra h thc:
L = n.
gi l h s t cm ca cun dy, n v l henry [H]
I
Khi c th tnh sc in ng cm ng theo cng thc:
I
= L
e = n.
(du - biu th tc dng chng li s bin thin)
t
t
n v ca t cm l t s gia t l thay i ca dng in v in p qua
mt cun cm. Mt t cm l mt Henry (H), i din cho hiu in th mt volt qua
mt cun cm trong dng in tng ln hoc gim xung mt ampe mi giy.
Trn thc t, n v H l mt gi tr kh ln v him khi gp, thng thng ngi
ta s dng n v mH v H.

b. Tr khng ca cun dy
Mt cun dy c tc dng nh mt in tr dy qun bnh thng i vi thnh
phn dng mt chiu, nhng vi thnh phn dng xoay chiu th hin tng t cm c
xu th i lp li dng in ban u chy qua v s cn tr ny c c trng bi thng
s cm khng ca cun dy XL.
X L = 2 . f .L
[]
vi f l tn s ca dng xoay chiu v L l t cm ca cun dy

Khi tr khng ca cun dy l:
ZL = RL + jXL
V modun ca h thc trn c tnh bng:
Z L = R 2L + X L2
[]
Nhn xt:
+ Tn s dng xoay chiu qua cun dy cng ln th in khng cng tng
+ Nu tn hiu c cha c thnh phn mt chiu v xoay chiu cao tn th khi tc
ng vo cun dy n s d dng cho qua thnh phn 1 chiu (hay tn s thp) v chn
thnh phn cao tn. (nh vy phn ng ca cun dy vi tn hiu ngc vi phn ng
ca t in)
c. H s phm cht Q ca cun dy
Khi dng in chy qua cun dy th trn thc t cun dy s nng ln, ngha l
c tn hao nng lng. Ngi ta biu th tn hao ny bng mt in tr mc ni tip vi
cun dy nh sau:
a
b
XL
Vi R l in tr ca dy dn lm cun dy, XL l cm khng ca cun dy. H s

phm cht Q l t s gia thnh phn cm v thnh phn tr ca cun dy.
X
Q = L vi XL = 2fL
R
Q cng cao chng t tn tht trn cun dy cng nh, c th gim R tng Q
bng cch s dng dy qun l kim loi c dn in tt.
d. Tn s lm vic gii hn ca cun dy
Trn thc t cun dy c tn s lm vic b gii hn bi in dung ring l in
dung phn tn gia cc vng dy. V vt liu lm dy dn l kim loi ng vai tr nh
bn cc t cn cht cch in gia cc vng dy ng vai tr nh cht in mi nn c
th coi cc cp vng dy c vai tr nh mt t in.
L
a
f0 =
1
2 L.C
54
Cu kin in t

khu vc tn s thp thnh phn in dung ny c th b qua nhng khu vc
tn s cao th cun dy lc ny tr thnh mt mch cng hng song song c tn s lm
vic b gii hn bi tn s ring ca mch.
Nu cun dy lm vic khu vc tn s cao hn f0 th n mang tnh dung nhiu
hn tnh cm, do tn s lm vic ca cun dy phi nh hn f0.
3. Cc cch ghp cun dy
a. Ghp ni tip
L1
L2
Cc cun dy ghp ni tip s c h s t cm tng ng bng tng cc h s t

cm ca cc cun dy thnh phn (tnh nh in tr ni tip)
L = L1 + L2 [H]
b. Ghp song song
L1
L
L2
Cc cun dy mc song song s c h s t cm tng ng c tnh nh in

tr mc song song.
1 1
1
=
+
L L1 L 2
4. Phn loi v ng dng ca cun dy
C nhiu cch phn loi cun dy
a. Theo li ca cun dy
Cun dy li khng kh (hay khng li) l cun dy c qun trn ct bng ba,
s hoc khng c ct. Loi cun dy ny c h s t cm nh (< 1mH) v thng c
s dng khu vc tn s cao hoc siu cao. Cun dy li khng kh c s dng phn
ln trong cc thit b thu pht tn s v tuyn v cc h thng anten. V khng kh
khng tiu th nhiu nng lng dng nhit nn c th coi cun dy li rng c hao
ph bng 0 v c kh nng dn in khng hn ch min l c kch c ln v ng knh
si dy ln.
Cun dy li st bi l cun dy c li lm bng bt st nguyn cht trn vi cht
dnh khng c t tnh. Loi cun dy ny c h s t cm ln hn loi khng li nhng
nh hn loi li st t tu vo hn hp c s dng. Chng thng c s dng khu
vc tn s cao v trung tn.
Cun dy li ferit thng c s dng khu vc tn s cao v trung tn, c khi
c khu vc tn thp nh m tn v ferit c t thm cao hn bt st rt nhiu. Li

ferit c nhiu hnh dng khc nhau nh: dng thanh, hnh ng, hnh xuyn, ch E, ch C,
hnh ni xem hnh di y:
Mt s hnh dng li ferit v cun dy li ferit

Cun dy li st t s dng khu vc tn s thp (m tn). Loi ny c lm t
li st cacbon, st silic hay st niken dy dn l dy ng trng men cch in qun
thnh nhiu lp, cc lp c chng m v cch in vi nhau. Do li bng st t c
t thm ln nn cun dy li st t c h s t cm cao nhng kch thc v trng lng
cng rt ln.
Ch :
. Cc cun dy c li st t khi chu dng ln c th lm cho li b bo ho. iu ny
xy ra khi li bng vt liu st t khng th to ra t thng tng khi dng in tng, kt
qu l lm t cm thay i, lm gim dng in ca cun dy.
. Bn thn li st t tiu tn mt lng in kh ln di dng nhit v nu li b nng
n mt mc no n s b gy, ngha l lm hng cun dy v hn ch kh nng qun
l dng in ca n.
b. Theo hnh dng
Cun dy dng thanh, tr (solenoid):
loi c s dng u tin v ph bin nht
do d ch to v d iu chnh t thm.
Cun dy hnh xuyn (toroid): loi ny
nhiu u im hn loi solenoid v cn t
cun dy hn c c t cm nht nh
v kch thc cng nh hn. Nhng u im
hn c l tt c thng lng trong mt cun
cm toroid c cha bn trong vt liu li,
ngha l khng c h cm khng mong mun
vi cc thnh phn xung quanh. Tuy nhin,
n cng c nhc im l kh iu chnh
t thm v kh qun hn cun solenoid.
Xem hnh bn.
56
Cu kin in t

Cun dy hnh ni: loi ny c u im nh toroid ch li c
khuynh hng ngn chn t thng vt ra ngoi kt cu vt l. t
cm ca cun dy li ni c tng ln mt cch ng k vi mt
kch thc nh. Nhc im chnh l vic iu chnh rt kh khn v
phi chuyn i s vng dy nh cc van ti cc im khc nhau ca
cun dy.
c. Theo s thay i ca h s t cm
Cun dy c h s t cm khng i l cun dy khng iu chnh c h s t
cm.
Cun dy c h s t cm thay i l cun dy c th thay i h s t cm bng
cch iu chnh li hay s vng dy ca n. Vic di chuyn vo ra ca li s lm thay
i t thm bn trong cun dy. Chuyn ng vo ca li lm t cm tng ln cn
khi li chuyn ng ra t cm s gim.
d. Theo khu vc tn s lm vic
Cun cao tn
Cun trung tn
Cun m tn
e. Theo ng dng
Cun cng hng l cun dy cng vi t in kt hp thnh mt mch cng
hng to dao ng, chn sng, by nhiu
L
a
L
a
Mch cng hng LC song song v ni tip
Cun lc l cun dy kt hp vi t in to thnh cc mt lc phn chia di

tn.
Di y l mt s mch lc LC th ng v p ng tn s bin ca chng.
Lc thng thp
Lc thng cao
Lc thng di
Lc chn di

Cun chn thng l cun c li st t chn thnh phn cao tn, lc phng
in p ngun cung cp, trnh cho dng mt chiu c bin ng bt thng. Nhng
cun cm lm nhim v ny phi c tr s ln (vi H)
D1
DIODE
V1
-5/5V
L1
C2
C1
Rt
L2
50 Hz
Role in t y l mt ng dng rt ph bin

ca cun dy cho php iu khin cng tc bng in
thay v ng m bng tay. Hot ng ca role in t
da vo hin tng cm ng t ca cun dy khi c
dng in i qua. Nh bit, dng in qua cun dy
s lm cho cun dy hot ng nh mt nam chm
in c kh nng ht l kim loi chm vo tip im.
Khi s dng role cn ch in p hot ng v dng
chu ng ca cc tip im, cc thng s ny u c ghi trn thn ca role
Lin lc v tuyn. Anten ca i pht thanh hay truyn hnh ... thc cht cng l
mt cun dy to nn sng in t c t trng bin thin lan to trong khng gian. T
trng bin thin ny s cm ng sang cc anten (cng l nhng cun dy) my thu v
nh vy ta thu c thng tin t xa m khng cn truyn ti qua ng dy.
My pht in c cu to vi b phn chnh l cc cun dy b tr trong lng
ca mt nam chm. Khi cho cc cun dy quay hoc cho nam chm quay (nh thu lc,
kh nng, gi hay nng lng mt tri ...) s c t trng bin thin v do sinh ra cm
ng in t sang cc cun dy, ngha l to ra cc dng in (mt pha hoc ba pha)
Bin p l mt trng hp c bit khi mc song song hai cun dy qua mt li
st t hay li ferit, phn tip theo y s trnh by c th v bin p.
IV. Bin p
Bin p l linh kin dng ngn dng mt chiu gia hai cun dy v bin i
gi tr in p (hoc cng ) ca cc dng xoay chiu t cun n sang cun kia nhng
vn gi nguyn tn s.
1. K hiu v cu to ca bin p
Bin p gm hai hay nhiu cun dy trng sn cch in qun chung trn mt li
thp (mch t)
Li ca bin p c th l st l, st bi hay khng kh
Cun dy u vo ngun cung cp gi l cun s cp, cun u ra ti tiu th gi
l cun th cp.
58
Cu kin in t
Bin p li st t
Bin p li st bi
Bin p khng li
Bin p t ngu
Nng lng t cun s cp sang cun th cp thng qua cm ng in t, bin p

c tc dng bin i t mt in p vo thnh nhiu in p ra khc nhau.
Khi hai cun dy cng c qun trn mt li th bin p gi l bin p t ngu
hay bin p khng c cch ly v in.
2. Nguyn tc hot ng ca my bin p
Khi cho dng in xoay chiu vo cun dy s cp th dng in s to ra t
trng bin thin chy trong mch t (chnh l li hnh ch nht rng hoc hnh xuyn)
v sang cun dy th cp, cun dy th cp nhn c t trng bin thin v trong n
s xut hin mt dng cm ng xoay chiu cng tn s.
cun s cp ta c:
N1
V1
N2
a
u1 = e1 = N 1
t
cun th cp ta c:
V2
50 Hz
u 2 = e2 = N 2
b
t
trong N1 l s vng dy ca cun s cp v N2
l s vng dy ca cun th cp.
3. Cc tham s k thut ca bin p
a. H s ghp bin p K
H s ghp bin p K l t s gia t thng lin kt gia hai cun dy v tng t
thng sinh ra bi cun s cp.
M
K=
L1 .L2
vi M l h s h cm c tnh bng cng thc:
M =
eL
i / t
vi i / t l tc thay i ca dng in chy trong cun s cp

H cm M l thng s biu th s lin h v t gia hai cun dy.
H s K tu thuc vo cch ghp hai cun dy. H s ghp bin p K = 1 l trng
hp l tng khi ton b s t thng sinh ra do cun s cp u c i qua cun th
cp v ngc li. Khi hai cun dy khng c lin h vi nhau v t trng th K = 0
K<< 1 gi l ghp lng
K 1 gi l ghp cht
b. Cc t l ca bin p
U1
N
= 1 =n
U2 N2
Nh vy, mun tng in p ra cn tng s vng dy cun th cp hoc gim s vng
dy cun s cp v ngc li, khi mun gim in p ra cn gim s vng cun th cp
hoc tng s vng cun s cp.
I1 N 2 1
=
=
T l v dng in:
I 2 N1 n
H thc trn cho thy mt bin p tng p bao gi cng lm h dng v ngc li, bin
p h p s lm tng dng.
T l v cng sut:
P1 = P2
Mt bin p l tng coi nh khng c tn hao trn hai cun dy v mch t s c
cng sut s cp v th cp bng nhau.
Tuy nhin trn thc t cng sut tiu th bn th cp lun nh hn cng sut ca
ngun cung cp cho s cp. Nguyn nhn l do cc cun s cp v th cp c in tr
ca dy dn nn tiu hao nng lng di dng nhit. Thm vo , li t c dng in
cm ng do t thng thay i s t kn mch trong li (gi l dng Fuco) cng tiu th
nng lng di dng nhit.
V nhng tn hao trn ngi ta a ra thng s hiu sut ca bin p l t s gia
cng sut ra v cng sut vo tnh theo % nh sau:
P
P2
= 2 .100% =
.100%
P1
P2 + Ptn hao
vi:
P1 l cng sut ca cun s cp
P2 l cng sut thu c cun th cp
P tn hao l cng sut mt mt do tn hao trn cun dy v mch t
Khi h mch ti trn mch bn th cp th vn c tn hao trn bin p gi l tn
hao khng ti, n thng chim khong 5% cng sut danh nh ca bin p. Khi bin
p c ti ln nht theo cng sut danh nh (gi l y ti) th hiu sut cao nht khong
80% n 90%.
tng hiu sut ca bin p phi gim tn hao bng cch dng li lm bng cc
l st t mng c qut sn cch in, dy qun dng loi c tit din ln v ghp cht.
T l v tng tr:
1
C:
U1 = n.U2
v
I1 = .I2
n
T l v in p:
60
Cu kin in t

2
N
U
U
R
R 1 = 1 = n 2 . 2 = n 2 .R 2
1 = 1 = n 2
I1
I2
R2 N 2
vi R2 l ti th cp v R1 c gi l in tr ti phn nh v s cp.
Khi c ti vi tr khng Z2 ni ti cun th cp, tr khng ca cun s cp lc
l Z1 = n2.Z2, t c th xc nh n theo h thc:
Z1
R1
R1
n=
Z2
R2 + Rt
Rt
y chnh l h thc xc nh loi bin p dng phi hp tr khng gia
mch s cp R1 v mch th cp Rt (>> R2)
4. Phn loi v ng dng ca bin p
Bin p l linh kin dng bin i in p, bin i dng, ngn cch thnh phn
dng mt chiu gia cc mch khi hai cun dy c cch in vi nhau v c khi l
phi hp tr khng gia cc tng.
Ngi ta thng phn loi bin p theo ng dng ca chng.
Mt s loi bin p thng gp:
a. Bin p ngun (bin p cp in)
Bin p ngun l bin p lm vic tn s 50 n 60 Hz bin i in p li
(thng l 110V 60 Hz hoc 220V 50Hz) thnh in p v dng in u ra theo yu
cu ng thi ngn cch thit b khi ngun in cao p.
Cc bin p ngun thng c 3 u vo (0V, 110V v 220V) v nhiu u ra (0V,
1.5V, 3V, 4.5V, 6V 12V 24V)
Cc thng s chnh chn bin p ngun l tr s in p u ra v dng in ln
nht qua c bin p. Hai thng s ny s quyt nh ti kch thc v gi thnh ca
bin p.
Cc yu cu i vi mt bin p ngun tt l tn hao trong li nh, h s ghp cao,
kch thc nh gn.
80VAC
240VAC
L1
L3
L2
Mch in t
to dao ng
cao tn
p AC ra n
nh
Hin nay, vi mt s thit b yu cu ngun cung cp c n nh cao nh my

tnh, mn hnh, tivi, VCR ngi ta s dng mch n p di rng gi l
autovolt vi s nh hnh trn.
S trn c nguyn tc hot ng nh sau: Ngun in li khng n nh c

a vo mch nn in to ra in p mt chiu. Dng dc ny chy qua cun dy bn
s cp ri qua mch in t to dao ng cao tn. Dao ng cao tn lm c ch dng dc,
lc c lc mt, do to nn dng i (ac) bin i nhanh, to ra sc in ng t cm rt
ln do di/dt ln. Sc in ng ny c th ln ti 1kVAC v nh vy s khng n nh
ca in li ban u (80VAC 240VAC) c th coi nh khng nh hng ti sc in
ng ca cun th cp, tc l cng chng nh hng ti cun s cp, u ra ac ca mch
c n nh.
Di y l mch to cao p cho n hnh ca tivi hoc monitor my tnh cng vi
nguyn tc hot ng ging nh trn nhng s vng dy ca L2 ln hn nhiu s vng
dy ca L1 v b nn in th 2 ng thi l b bi p v u ra ta s c cao p c th
ln ti 20 30kV.
80VAC
240VAC
L1
L2
Cao p
> 10kV
Mch in t
to dao ng cao
tn
b. Bin p cng hng

y l bin p cao tn c li khng kh, st bi hoc ferit c ghp lng c
th iu chnh li. Cc t c mc vi cc cun s cp v th cp to thnh cc
mch cng hng. Nu ch c mt t gi l mch cng hng n, nu c hai t gi l
cng hng kp hoc cng hng lch (nu tn s cng hng lch nhau)
Bin p cng hng thng c s dng lm ti cho cc tng khuch i trn tn,
chn lc tn s
c. Bin p m tn
Bin p m tn lm vic di tn s m tn t 20 Hz n 20 kHz. Bin p ny cho
php bin i in p m khng gy mo dng sng, ngn cch thnh phn mt chiu
gia cc tng, bin i pha
Do lm vic tn s thp nn cc bin p m tn thng c li st t, kch thc
v trng lng ln. Chnh v l do ny m bin p m tn cng ngy cng t c s
dng.
62
Cu kin in t
Chng III: Linh kin tch cc
Chng III
Linh kin tch cc

I. lp chuyn tip P-n
1. S hnh thnh lp chuyn tip P N v tnh cht ca n
Trn mt phin tinh th n bng phng php cng ngh no (plana khuch
tn epitaxi) ta nhn c 2 min: mt min cha tp cht acceptor (min P) v mt
min cha tp cht donor (min N). Ranh gii tip xc ca 2 min P v N c gi l
lp tip xc cng ngh hay lp tip xc luyn kim hay lp chuyn tip P N. Ngha l,
nhn c chuyn tip P N trn thc t khng th ly 2 phin bn dn P v N ghp
vi nhau mt cch n gin m ngi ta phi tin hnh pha tp cht vo bn dn thun
sau pha tip tp cht khc loi n chuyn t loi P sang loi N hoc ngc li. Ti
ni chuyn c tnh in hnh thnh chuyn tip P - N v chnh l s qu t bn
dn P sang N hoc ngc li.
Mt tip xc ch ni nng donor bng nng acceptor.
Mt tip xc
Cu trc ca tip xc P - N v phn b in tch m/dng trong
vng in tch khng gian
Tu theo s phn b tp cht ti min gn b mt tip xc, ngi ta chia chuyn

tip P - N thnh 2 loi chnh l:
+ Chuyn tip P - N nhy bc nu s bin i nng tp cht xy ra t ngt
+ Chuyn tip P - N tuyn tnh nu s bin i nng tp cht xy ra t t
Hnh di y biu din kiu pha tp tuyn tnh v nhy bc
N(x)
N(x)
Na
Na
Nd
Nd

Tuy nhin c tnh ca c 2 loi ny ging nhau nn trong qu trnh nghin cu
chuyn tip P - N ta khng cn ch ti chuyn tip P - N thuc loi no.
Chuyn tip P-N l mt dng tip xc phi tuyn c tnh cht dn in khng i
xng theo hai chiu in p t vo.
Khi cha c in p ngoi t vo chuyn tip P-N dng cn bng nhit ng v
khng c dng qua n. Cc ion m bn P v ion dng bn N to nn mt in trng
trong gi l in trng tip xc Etx hng t N sang P lm cn bng dng khuch tn
ca cc ht dn a s (do s chnh lch nng ) v dng tri ca cc ht thiu s (do
c Etx gia tc). Chnh v vy, trng thi ny ca chuyn tip P-N gi l trng thi cn
bng ng (c hai dng ngc nhau qua chuyn tip nhng dng tng bng 0).
Min c to thnh t cc khi ion m v dng gi l min in tch khng gian
(SCR) hay min ngho v hu nh khng c ht dn t do y. c tnh in ca min
ny s quyt nh c tnh in ca chuyn tip P-N.
2. Lp chuyn tip P N phn cc thun (Forward Bias)
Khi t mt in trng ngoi ln lp chuyn tip P N theo chiu cc dng ni vi P v cc m ni vi N th
chuyn tip P - N c gi l phn cc thun. Xem hnh
bn
E tx
in trng ngoi ngc chiu vi in trng tip
Ith
xc v ph v trng thi cn bng ca chuyn tip P - N.
Cc dng ca ngun in p ngoi s y cc l trng t
bn P v pha bn N v b ht v cc m ca ngun. Ngc li, cc m ca ngun y
electron bn N v pha bn P v b ht v dng ngun to thnh mch kn. Nh vy,
ngun in p ngoi lm cho cc ht dn a s d dng di chuyn qua chuyn tip to
thnh dng thun Ith. Thc cht y l dng tng ca dng khuch tn v dng tri
nhng dng khuch tn ln hn nhiu so vi dng tri.
Dng in thun tng theo quy lut hn m cng vi s tng ca in p ngoi
theo chiu thun:
q.E ng
q.S
i P ( 0) =
.DP . p ( N ) .exp(
) 1
LP .
KT
Trong :
q: in tch ca in t (q = 1,6.10-19 C)
S: din tch tip xc
LP: di khuch tn ca l trng
DP: h s khuch tn ca l trng
p(N): nng l trng bn dn li N
Eng: in p ngoi (+)
iP(0): mt dng l trng i qua chuyn tip
Nhng ht dn a s sau khi vt qua chuyn tip P - N sang pha bn dn bn kia
gi l cc ht thiu s tri v hin tng ny gi l hin tng tim ht dn thiu s tri
qua min in tch khng gian.
64
Cu kin in t

3. Lp chuyn tip P N phn cc ngc (Reverse Bias)
t mt in p ngoi ln chuyn tip P - N vi
cc dng t ln N v cc m t ln P ta c chuyn
tip P - N phn cc ngc. Xem hnh bn
Hin tng hon ton ngc vi trng hp
E tx
phn cc thun. Ngha l do in p ngoi cng chiu
Ing
vi in trng trong nn in trng tng trong
min in tch khng gian tng ln, ko theo s gia
tng ca cao ro th v rng ca min ny.
Dng khuch tn b gim cn dng tri c tng cng.
Tip tc tng in p ngc th dng ngc tng nhng do nng cc ht thiu
s rt t nn ban u dng ngc tng theo quy lut hm m theo s tng ca in p
ngoi sau n nhanh chng t ti gi tr bo ho (iS) v khng tng na cho d vn
tng in p ngc.
q.E ng
q.S
i n ( 0) =
.Dn .n ( p ) .exp(
) 1
Ln .
KT
C th tnh iS nh sau:
D
D
i S = q.S .( n .n ( P ) + P . p ( N ) )
Ln .
LP
(P)
n : nng in t bn dn loi P
p(N): nng l trng bn dn loi N
Ch : i vi bn dn Ge: iS ~ 100nA; vi bn dn Si: iS ~ 10 pA
Tm li, cc ch phn cc cho diode v rng tng ng ca vng ngho
c minh ho hnh di y.
a)
b)
c)
d)
trong :
a). Cha phn cc (khng c dng, rng ca vng ngho khng i)

b). Phn cc thun nh hn in p ngng (dng thun rt nh, vng

ngho thu hp dn)
c). Phn cc thun mc ngng (dng thun ln, vng ngho bin mt)
d). Phn cc ngc (khng c dng, vng ngho rng ra)
4. c tuyn Von - Ampe ca chuyn tip P N
c tuyn Von-ampe biu th mi quan h gia dng in chy qua chuyn tip
P - N vi in p t ln n.
I = f( Ungoi)
Dng in tng qua chuyn tip c tnh:
q.Eng
i = iS .exp(
) 1
KT
Dn ( P ) D P ( N )
.n +
.p )
Ln .
LP
Khi Eng l in th phn cc ngc v Eng >> KT/q ta c:
q.E ng
)
i i S . exp(
KT
vi
i S = q.S .(
T phng trnh ny c th v c c
tuyn Von-ampe ca chuyn tip P - N nh hnh
bn.
on c tuyn thun:
Vng
ith = i S .exp( ) 1 vi VT = KT / q l
VT
in th nhit, VT ~ 26 mV nhit phng T =

300K; K = 1,38.10-23 J/K;
e = 2,73;
Qua c tuyn c th thy dng in thun ~
mA trong khi dng in ngc ch ~ A . Nh vy,
ith >> ing chng t chuyn tip P - N c c tnh
dn in gn nh 1 chiu nn c gi l lp
chuyn tip chnh lu.
Dng tng qua chuyn tip c tnh theo cng thc:
Vng
I = I S .exp(
) 1
.VT
= 1 vi Ge (dng in ln)
= 2 vi Si (dng in nh)
on c tuyn ngc :
Khi in p ngc nh, dng ngc nh v tng chm do s ht dn thiu s 2
phin bn dn t. on ny dng in ngc l mt hng s khng ph thuc vo in
p ngc v c gi l dng in ngc bo ho (Is)
Khi in p ngc t gi tr ln xc nh no th dng in ngc tng t
ngt gy ra hin tng nh thng chuyn tip P N.
66
Cu kin in t

Nguyn nhn: do in trng ln nn cc ht chuyn ng qua vng in tch khng
gian c tc cao v do lm ion ho cc nguyn t bn dn nn to ra cc cp
in t- l trng mi. Qu trnh tip din nhanh v mnh nn dng ngc rt ln v hin
tng ny gi l nh thng thc l (ion ho do va chm). Ngoi ra, nu in trng
ln ion ho trc tip nguyn t bn dn th chuyn tip P-N cng b nh thng theo
hiu ng xuyn hm (hiu ng zene). (xem phn tch chi tit trong phn diode)
II. Diode
Diode ngha l hai nguyn t. Trong nhng nm u ca in t v v tuyn,
hu ht cc diode l cc ng chn khng hai cc. Catot pht ra cc electron v anot s
thu cc electron . Trong cc ng chn khng ny in p ca catot v anot ln ti
hng trm thm ch hng ngn Volt mt chiu.
Ngy nay, khi ni ti diode chng ta hnh dung l khng phi l ng chn
khng nng n m ch l cc mu nh lm t silicon hoc cc vt liu bn dn khc,
ngi ta gi l diode bn dn. Diode bn dn c nhng c tnh tuyt vi m ng
chn khng khng th c v chng c ng dng rt rng ri trong ngnh k thut in
t. Phn di y s gii thiu chi tit diode bn dn.
1. Cu to v k hiu
Cu to, k hiu diode
Diode bn dn l mt linh kin in t gm 1 chuyn tip P - N v 2 chn cc ant

ni vi bn dn P v catt ni vi bn dn N.
Hnh dng thc t ca mt s loi diode:
2. Nguyn tc lm vic, c tuyn Von-ampe ca diode

+ Nguyn tc lm vic ca diode
Da trn tnh cht dn in mt chiu ca chuyn tip
P - N. Hnh bn l s cp ngun cho diode.
Khi a in p ngoi c cc dng ni vo ant, cc
m ni vo catt (UAK > 0) th diode s dn in v trong
mch c dng in chy qua (coi nh ngn mch). Khi
electron dch chuyn t bn N (catot) sang bn P (anot) do
s chnh lch nng th s thiu ht ny s c cc m

ca ngun pin cung cp. ng thi, cc dng ca
ngun cng thu li cc electron ny t bn P. Khi ny
ngi ta ni chuyn tip P - N c phn cc thun v
diode nh mt kho ng lm ngn mch.
Khi in p ngoi c cc m ni vo ant, dng
ni vo catt (UAK < 0) diode s b kho (coi nh lm
h mch). S d vy l do cc in cc ht electron bn
N v pha cc dng cn l trng bn P li b ht v
pha cc m, ngha l cc ht dn in b ko v hai u
cc. iu ny lm cho s ht dn trong vng ngho
gim i r rt v hot ng nh mt cht cch in. Ta
ni chuyn tip P - N phn cc ngc v diode nh mt kho m lm ngt mch (thc
cht l ch c dng in ngc rt nh chy qua)
+ c tuyn Von-ampe ca diode
c tuyn Von-ampe ca diode biu th mi
quan h gia dng in qua diode v in p t gia
2 chn cc ant v catt (UAK). y chnh l c
tuyn Von-ampe ca lp chuyn tip P - N v b
phn chnh ca diode l lp chuyn tip P - N.
I = f (UAK)
Dng in chy qua diode c tnh theo cng
thc tnh dng in qua chuyn tip P - N. Trong
biu thc ny ta ch vic thay UAK vo v tr ca Vngoi
v ta s c:
V
I = I S .exp( AK ) 1
.VT
= 2 vi dng in nh (Si) v = 1 vi dng in ln (Ge)

Phn thun ca c tuyn (khi UAK > 0)
V
+ Khi UAK < UD: dng in tng chm theo quy lut hm m l: exp( AK ) 1
2.VT
(thng thng khi ny Ith < 1% Ithmax)

+ Khi UAK > UD: dng in tng nhanh hn theo quy lut hm m l:
V AK
(tng gn nh tuyn tnh vi in p)
) 1
exp(
VT
Trong UD c gi l in p ngng ca diode. Khi UAK = UD th diode mi

bt u c tnh l phn cc thun, lc ny dng in thun mi ln v bng
0,1Ithmax
Ithmax l dng in thun cc i cho php ca diode, diode khng c lm vic
vi dng in cao hn tr s ny. in p ng vi gi tr Ithmax c gi l Ubh, n c gi
tr khong 0,8V i vi diode Ge v khong 1,2V i vi diode Si.
Vi diode Ge gi tr UD 0,3V v vi diode Si gi tr UD 0,7V
Vng phn cc thun c c trng l dng ln (mA), in p nh v in tr nh
( )
68
Cu kin in t

Phn ngc ca c tuyn Von-ampe
Vng phn cc ngc (hay cn gi l vng kho ca diode) vi c trng l dng
nh c gi tr IS0 ( A) gn nh khng i, p ln (hng chc cho ti hng trm V tu
tng loi diode) v in tr ln (hng chc nghn )
Khi UAK tng ti mt gi tr Udt th dng in ngc tng vt, ngi ta gi l
hin tng nh thng chuyn tip P - N. Hin tng ny lm mt kh nng chnh lu
ca diode (tr diode Zene l diode s dng on nh thng ca c tuyn n nh
in p). in p ti im nh thng gi l in p nh thng v k hiu l Udt.
Udt c gi tr khong 12V i vi diode tch sng v khong 100V i vi diode
nn in.
C 2 hin tng nh thng: nh thng v in v nh thng v nhit
+ nh thng v nhit thng xy ra vi Ge khi nhit lng thot ra nh hn
nhit lng sinh ra trong chuyn tip. Ni cch khc, c s tch lu nhit trong qu trnh
hot ng ca diode. Khi dng ngc tng nhanh, dng ngc tng li lm nhit
tng . Qa trnh lin tc theo mt chu trnh v ti mt gii hn no th dng ngc
ln s nh thng chuyn tip (nh thng vnh vin).
Nguyn nhn: nhit nng c cung cp trc tip cho nguyn t bn dn nn v lm bt
ra cc in t, ngi ta gi y l hin tng pht x cp in t - l trng do nhit. Khi
ny s in t v l trng tri hn hn so vi ht dn sinh ra do qu trnh ion ho tp
cht.
+ nh thng v in thng xy ra vi diode Si. C 2 c ch l nh thng
xuyn hm v nh thng thc l
nh thng xuyn hm (nh thng Zene) l hin tng nh thng lp chuyn
tip P - N theo c ch xuyn hm. S nh thng s xy ra khi in trng t ln
chuyn tip t gi tr ti hn no . Khi ny in trng ion ho chnh nhng
nguyn t cht bn dn nn v lm s ht dn tng t ngt, ko theo dng ngc tng
t ngt.
Thng thng gi tr ti hn ca cng in trng t ln chuyn tip P - N l
7
3.10 V/m vi diode Ge v 8.107 V/m vi diode Si.
nh thng thc l l hin tng nh thng lp chuyn tip P - N theo c ch
thc l, ngha l s ion ho cc nguyn t ca mng tinh th bi s va chm vi cc
ht ti in mng nng lng ln. Khi ny in trng gia tc cho in t v l trng
lm cho chng chuyn ng nhanh v va chm vi cc nguyn t trong mng gy ra
hin tng ion ho do va chm. Nh vy s cp in t v l trng tng ln v kt qu l
dng in qua chuyn tip tng mnh.
Ch :
+ in p nh thng t l nghch vi nng pha tp cht trong cht bn dn.
Cht bn dn pha tp cng nhiu th in p nh thng cng nh. Tu theo vt liu m
in p nh thng c th t vi V ti vi chc ngn V.
+ nh thng xuyn hm l qu trnh xy ra tc thi. nh thng thc l cn c
mt thi gian gia tc cho ht dn.
+ rng min in tch khng gian cng rng th nh thng thc l cng xy ra
mnh lit (do on tng tc cho ht dn di nn tc ht dn ln) cn nh thng zene
khng b nh hng.
+ C th lm qu trnh thc l xy ra mnh hn nu tng s ht dn bng mt

phng php bn ngoi no (chiu sng hoc bn ph ion) nhng iu ny khng
lm nh hng ti nh thng zene.
3. M hnh gn ng v tham s ca diode
M hnh tng ng gn ng ca diode a ra nhm thay th diode trong mch
in d tnh ton hay xc nh cc tnh cht ca n.
a. S tng ng khi diode phn cc thun
+ Khi in p trong mch ln hn nhiu in p ngng UD (UD ~ 0,6V vi Si v
0,2V vi Ge). Lc ny coi diode nh mt kho in t trng thi ng v c tuyn
Von-ampe coi nh trng hp ngn mch
+ Khi in p ng bng UD. c tuyn Von-ampe l mt ng thng song
Diode nh mt kho in t ng
song vi trc I ti UD v diode c coi l ngun in p l tng.
Diode nh mt ngun in p l tng
+ Khi diode c in tr trong l mt in tr thun. Trng hp ny diode c

coi nh mt ngun in p thc.
in p thun ca diode lc ny c tnh bng :
Uth = UD +Ith.Ri
Diode l mt ngun in p thc
70
Cu kin in t

+ S tng ng ch tn hiu nh tn s thp
I
E/R
M2
IM
u
M1
UAK
UM
Diode c coi nh mt phn t tuyn tnh
Ch tnh l ch diode lm vic vi ngun mt chiu E

Ch ng l ch diode lm vic vi ngun xoay chiu U~
ch tnh diode l mt phn t phi tuyn v im lm vic c th di chuyn
theo cc gi tr khc nhau ca c tuyn Von-ampe.
ch ng s bin thin ca tn hiu l nh gii hn im M ch trn on
M1M2. Do , diode c coi l mt phn t tuyn tnh v in tr ng ca diode c
tnh nh sau :
Ri =
26mV
IM
+ S tng ng ch tn hiu nh tn s cao
Diode ch tn hiu nh tn s cao
Khi ny c th coi diode nh l mt in tr thun Ri mc song song vi mt in

dung khuch tn Ckt.
in dung Ckt xut hin trong khong thi gian l khong thi gian lch pha gia
i v u. C th tnh Ckt nh sau:
C kt =
Ri
trong c gi tr t vi ns n s
b. S tng ng khi diode phn cc ngc

+ S tng ng nh mt kho trng thi h
Khi b phn cc ngc, diode hu nh khng cho dng i qua, do c th coi

nh mt kho in t m.
A
Diode l mt kho in t m
+ S tng ng nh mt ngun dng l tng

Khi t mt in p ngc nm trong khong cho php (nh hn in p nh
thng) ln diode, dng qua diode lc ny l dng ngc c gi tr gn nh khng i
(dng ngc bo ho) nn c th coi n nh mt ngun dng l tng.
Diodel nh mt ngun dng l tng
+ S tng ng nh mt t in ch tn hiu nh
Lp chuyn tip P-N ca diode khi b phn cc ngc c th coi nh mt t in
vi gi tr in dung tip gip Cpn.
Cpn c tr s bin thin theo in
p ngc t ln diode theo quy lut:
C0
vi n = 2 3
C pn =
1/ n
U nguoc
Diode nh mt t in
Tuy nhin, khi in p thun o
cc th cng lm xut hin in dung,
gi l in dung khuch tn Ckt. So vi in dung khuch tn Ckt th Cpn nh hn t 100
ti 1000 ln
4. Cc tham s tnh ca diode

nh gi, la chn v s dng ng
diode ta cn bit cc tham s k thut ca n,
t c th xc nh cc ch lm vic
vi cc i lng c trng l dng in, in
p v cng sut.
I (mA)
M
I
a. in tr tnh R0
in tr tnh hay in tr mt chiu l
in tr ca diode khi lm vic ch ngun
mt chiu.
UAK
Xc nh in tr mt chiu v in
tr ng ca diode
72
Cu kin in t
U
R0 =
I
1
I
= 1 =
U
R0
R0 chnh l nghch o gc nghing ca c tuyn Von-ampe ti im lm vic
tnh (gc 1 ). Nh vy R0 khng phi l mt gi tr c nh, n ph thuc vo tr s in
p v dng in.
tg 1 =
b. in tr ng Ri
Ri l nghch o ca gc nghing ca tip tuyn vi c tuyn Von-ampe, ngha l
t l vi cotg gc nghing ca ng tip tuyn Von-ampe ti im lm vic ca diode,
gc 2 .
.VT
.VT
dU
Ri =
=
=
= cot g 2
U
dI
I + I0
I 0 .e
.VT
Do c tnh dn in mt chiu ca diode nn I >> I0 v
Ri =
U
>> 1 , do
.VT
.VT
I
Do 2 > 1 nn R0 > Ri
c. H s chnh lu k
H s chnh lu l thng s c trng cho phi tuyn ca diode v xc nh bng
biu thc sau:
R0 nguoc
I
k = th =
khi UAK = 1V
I0
R0thuan
d. in dung Cd ca diode
in dung ca chuyn tip P - N gm 2 thnh phn:
Cd = Cpn + Ckt
Vi:
Cpn l in dung bn thn hay in dung ro th ca chuyn tip P - N
Ckt l in dung khuch tn ca chuyn tip P - N
+ in dung ro th Cpn
Khi ta t mt in p ngc ln chuyn tip P - N, cc ht dn a s s di chuyn
ra xa mt tip xc v ch cn li cc ion c nh. Khi ny nu bin i in p phn
cc ngc th s lng in tch trong min in tch khng gian cng bin i, ko theo
s bin i ca in p ri trn 2 b min in tch khng gian. Vy, chuyn tip P - N
khi phn cc ngc c hiu ng in dung v ngi ta gi l in dung ro th Cpn.
Tham s Cpn khng phi l mt tr s c nh, n ph thuc vo in p ngc t ln
chuyn tip v c xc nh theo cng thc:

. 0
dQ
C pn =
C pn =
. A vi A l din tch mt tip xc v Xm l
Xm
dU
b dy lp tip xc
Gi tr in dung ro th Cpn l hm ca in p ngc v s bin thin ca Cpn
ngc chiu vi s bin thin ca in p ngc. Li dng tnh cht ny ngi ta ch to
loi diode c bit gi l diode bin dung (xem chi tit phn sau)
+ in dung khuch tn Ckt
Ckt ch xut hin khi hin tng khuch tn xy ra (phn cc thun). Khi chuyn
tip phn cc thun, qua chuyn tip P - N c dng Ith chy. Nu i cc tnh ca
chuyn tip dng thun s ngng chy, ti thi im cc ht dn do dng thun mang
ti cha th i ra khi vng ny v do vy to ra s tch t in tch. Cc in tch ny s
phng ra theo chiu ngc vi dng thun a chng ti, thi gian phng ht cc ht
dn ny chnh l bng thi gian thit lp li trng thi cn bng ban u trc khi
chuyn sang phn cc ngc. Nh vy, Ing ban u bng Ith sau gim xung bng IS0. Gi
tr in dung khuch tn t l thun vi dng thun Ith. Dng ny cng ln, s in tch
lu trong chuyn tip P - N cng ln v do gi tr Ckt cng ln.
Ch :
+ C 2 i lng Cpn v Ckt u gy nh hng ln ti c tnh tn s v c tnh
qu ca dng c bn dn, c bit l khu vc tn s cao.
+ Khu vc tn s thp in dung c th coi nh khng ng k nhng khu vc
tn s cao dung khng gim nn c th coi diode b ni tt. Ngi ta gim in dung
bng cch gim din tch tip xc, do vy diode cao tn cn gi l diode tip im cn
diode nn dng cn c mt tip xc ln c kh nng chu ti nn gi l diode tip mt.
e. in p ngc cc i cho php
Ungc max l gi tr in p ngc ln nht c th t ln diode m n vn lm vic
bnh thng. Tr s ny thng c chn l 0,8Udt vi Udt l in p nh thng diode.
Tu theo cu to ca diode m Ungc max c th nm trong khong t vi V ti 10
ngn V.
f. Khong nhit lm vic
y l khong nhit bo m cho diode lm vic bnh thng. Tham s ny
quan h vi cng sut tiu tn cho php ca diode. Khi diode lm vic, dng in chy
qua n s lm cho diode nng ln, in nng bin thnh nhit nng. Cng sut cc i
m diode c th chu c l:
Ptt max = I max .U AK max
t 0 max t 0 0
vi t0max l nhit cho php cc i ca
0
0
t max 20
chuyn tip P N v t00 l nhit mi trng
Nh vy nhit mi trng tng th Pttmax s gim. Khong nhit lm vic ca
diode Ge l -600C n +850C; Si l -600C n 1500C
hoc l: Ptt max = Pmax (20 0 ).
74
Cu kin in t

5. Phn loi v ng dng
a. Diode chnh lu (nn in Rectifier)
K hiu ca diode chnh lu
Diode chnh lu s dng c tnh dn in mt chiu chnh lu dng in xoay

chiu thnh dng in mt chiu. Ngha l n ch chuyn dng in theo mt hng
thun khi anot c in p dng hn catot (dng hn mt gi tr in p nht nh tu
thuc loi diode, chnh l in p ngng)
Cn quan tm ti 2 tham s quan trng sau khi s dng diode chnh lu:
+ Dng in thun cc i Imax l dng in cho php xc nh dng chnh lu cc
i.
+ in p ngc ti a cho php Ungc max s xc nh in p chnh lu ln nht.
Ngi ta thng chn Ungc max = 0,8 Udt.
Trong trng hp chnh lu cng sut nh, nhit thp (khong 750C) ngi ta
dng Ge v cng sut ln nhit cao (khong 1250C) dng Si. Do dng in chnh lu
v in p ngc cc i ph thuc vo nhit mi trng nn cc diode cng sut
thng c gn trn cc b to nhit.
Diode chnh lu dng bin i dng in xoay chiu thnh dng in mt
chiu. C 2 kiu chnh lu l chnh lu na chu k v chnh lu c chu k.
Hin nay ngi ta sn xut sn cu diode nhng lp 4 diode theo kiu cu cho cht
lng mch tt hn v d sa cha hn d mch c cng knh hn.
Mch chnh lu na chu k v mch chnh lu c chu k
Ngoi ng dng lm mch chnh lu nh trn ngi ta cn li dng cc in p

ngng ca diode (0,3V cho diode Ge v 0,6V cho diode Si) hn ch bin ca tn

hiu. C ch ny i khi c p dng trong cc thit b nhn sng radio ngn chn
ting n khi mt tn hiu ln n. Vi mt s mch m thanh bo v mch khi s
vt qu ngng ngi ta cng s dng diode hn bin mc d iu ny c th lm
bin dng cht lng m thanh. Di y l v d v mt mch hn bin vi cc dng
sng u vo (B) v u ra (A)
D11
DIODE
R1
100k
V3
-10/10V
D12
DIODE
1kHz
A
B
+ V1
5V
R2
200k
+ V2
3V
b
12
a
c
8
4
0
-4
-8
-12
0
d
500u
f
1m
d
1.5m
2m
500 / i
2.5m
l
3m
b. Diode n p (Zene)
K hiu ca diode Zene
Cu to: Diode Zene c cu to tng i c bit ch n c nng pha tp

cht rt cao, c v bng thu tinh trong sut v kch thc kh nh.
Nguyn tc lm vic: diode n p lm vic trn
on c tuyn ngc. Ngi ta li dng ch nh
thng v in ca chuyn tip P - N n nh in p (t
3V n 300V). Gi tr in p nh thng ny ph thuc
vo b dy lp tip xc, tc l ph thuc vo nng pha
tp cht.
a s cc diode n p u c ch to t Si v l
diode tip mt (do phi chu dng ln)
Khi phn cc thun diode Zene hot ng nh mt diode bnh thng. Khi phn
cc ngc v lm vic ch nh thng th n khng b hng nh diode khc. T s
trn ta thy khi in p thp hn in p ngng diode coi nh lm h mch, khi in
p vt qu in p ngc in tr ca diode bt u gim. in p cng tng dng qua
diode cng ln, ngha l n ngn chn mt cch hiu qu in p o vt qu in p
76
Cu kin in t

cho php trn hai u in tr ti.
n nh ca mch c tnh:
E 0
U od =
r
r
1+
+
Rt Ri
vi r l in tr hn dng chy trong mch;
U
Ri =
l in tr trong, Ri cng nh th cht lng n nh cng cao.
I
Cc tham s quan trng ca diode n p l:
+ in p n nh UZ
+ in tr trong Ri
+ Cng sut nh mc PZ, n l cng sut tiu tn
trn diode khi c dng IZ chy qua
PZ = UZ . IZ
+ Imin l tr s dng in nh nht ti im m hin
tng nh thng n nh
+ Imax l tr s dng in cc i qua diode c
xc nh bi cng sut tiu tn cc i trn diode (nu I
> Imax diode s b chy)
Diode Zene c c tuyn Von-ampe gn nh ca
diode thng nhng vng lm vic on c tuyn
ngc vi hiu ng nh thng Zene.
c tuyn Von-ampe ca diode Zene
Diode Zene c s dng trong cc mch ngun
v cc mch c yu cu n nh in p cao.
c. Diode xung
K hiu ca diode xung
Khi ny diode c s dng nh mt kho in t mt trong 2 trng thi:

dn khi in tr trong ca diode rt nh
ngt khi in tr trong ca diode rt ln
Thi gian chuyn trng thi ca diode xung yu cu phi nhanh v n xc nh tc
hot ng ca diode v do xc nh tc lm vic ca thit b.
Diode xung c cc loi l diode hp kim, diode meza v diode Sotky. Trong
diode Sotky c s dng rng ri nht vi UD ~ 0,4V v tp ~ 100 ps.
Diode xung c th ng vai tr lm cng tc tt hn bt c mt cng tc c kh
no vi tn s lm vic ln ti 30MHz. thc hin c vai tr , thng thng ngi
ta thm mt tng bn dn thun (i) kp gia bn dn N v P, do cn gi l PiN diode.
Diode xung thng c s dng trong cc mch k thut s, logic lm nhim
v ng ngt.

d. Diode bin dung (Varicap)
Diode bin dung (diode varicap) lm t silicon hoc galium arsenide l loi diode
K hiu ca diode bin dung
c s dng nh mt t in c tr s in dung iu khin c bng in p.

Nguyn tc lm vic ca diode bin dung l da vo s ph thuc ca in dung
ro th ca chuyn tip P - N vi in p ngc t
vo n.
Tr s ca diode bin dung tu thuc vo cu
to ca n v t l nghch vi cn bc hai ca in
p ngc t ln n. Xem hnh bn
Varicap thng c s dng trong cc mch
dao ng cn iu khin tn s cng hng bng
in p khu vc siu cao tn nh: mch t ng
iu chnh tn s AFC (automatic frequency
controller), cc mch iu tn v thng dng nht l
cc b dao ng khng ch bng in p VCO
(Voltage Controlled Oscilator)
e. Diode tunen (diode xuyn hm hay diode esaki)
K hiu ca diode tunen
Diode tunen c ch to t bn dn c nng pha tp rt cao (n = 1019 n 1023

nguyn t /cm3). Khi ny bn dn b suy bin, ngha l mc Fecmi i vo vng ho tr
ca bn P v vng dn ca bn N.
Diode ny c kh nng dn theo c 2 chiu thun v ngc.
Hin tng tunen (xuyn hm) l hin tng cc ht dn chuyn ng qua chuyn
tip P - N m khng b tn hao nng lng do mc nng lng fecmi khng nm trong
vng cm m i vo di dn ca N v di ho tr ca P, tc l ht dn khng cn vt
qua hng ro th nng. S di chuyn ny mi u l rt ln (khi UAK cn nh) sau
UAK tng dn lm cho s ht dn di chuyn xuyn qua chuyn tip P - N gim (lc ny
chnh lch mc nng lng gia hai bn gim hn nn cn tr qu trnh xuyn hm
ca in t). Do vy c tuyn Von-ampe ca diode tunen c on in tr m (in p
tng nhng dng in li gim), ngi ta s dng on c tuyn ny to cc mch
dao ng phng np.
Diode tunen c kch thc nh, n nh cao v tn s lm vic ln ti hng
nghn MHz. Chng c s dng trong cc mch khuch i tn hiu cao tn.
78
Cu kin in t

f. Diode cao tn
Diode cao tn c dng x l cc tn hiu cao tn. Chng thng l cc diode

tip im gim thiu tr s in dung.
K hiu ca diode cao tn ging nh diode chnh lu. Kch thc ca chng nh
hn diode chnh lu v thng c v bng thu tinh.
Cc loi diode cao tn thng dng:
+ Diode tch sng tch tn
ANTENA
hiu tn thp t dao ng cao tn.
Hnh bn l s minh ho ca
Tai nghe
mt my thu v tuyn tinh th. Diode
L
DIODE
lm nhim v khi phc li tn hiu v
C
tuyn, gi l tch sng. b tch
sng lm vic hiu qu diode phi c
in dung thp hot ng nh mt
b chnh lu tn s v tuyn.
+ Diode nhn tn dng thay
i tn s ca cc sng. Do tnh khng
tuyn tnh ca c tuyn diode nn sng vo
DIODE
v ra khi diode rt khc nhau, ni cch
khc sng ra xut hin cc thnh phn
C
L
nf0
hi mi l bi ca tn s sng u thu. f0
Hnh bn l mt mch nhn tn n ly
ra tn s hi bc n nh mch cng hng LC
(vi n. f 0 =
1
2 . L.C
+ Diode trn tn. Khi hai sng c tn s khc nhau c kt hp trong mt mch
khng tuyn tnh th s to ra cc tn s mi. Hin tng ny gi l to phch
(heterodyne), cc tn s mi c to ra gi l cc tn s nhp. Mt ng dng rt ph
bin ca diode trong trng hp ny l iu bin cc dao ng cao tn (sng mang)
theo tn hiu m tn. (s c trnh by chi tit trong gio trnh K thut mch in t)
g. Diode pht sng (LED Light emitting Diode)
y l loi diode c kh nng pht ra nh sng nhn thy hoc cc bc sng khc
tu theo vt liu cu to khi c phn cc thun. LED c k hiu v hnh dng thc t
nh hnh trn. Loi diode ny s c tho lun chi tit chng 4.

h. Diode thu sng (Photo diode)
Loi diode ny khi t in p phn cc ngc ln hai cc v c nh sng ri vo
mi lm cho diode dn, cng sng mnh hay yu s lm cho diode dn mnh hay
yu tng ng. (s c ni chi tit trong chng 4.)
i. T bo quang in
Mt diode silicon c chiu sng bng nh sng mt tri s to ra dng in mt
chiu (nu c bc x in t tc ng ln chuyn tip P N), y chnh l hiu ng
quang in, cng l nguyn tc hot ng ca cc t bo mt tri. Nh vy cc t bo
ny chuyn nng lng mt tri thnh nng lng in. T bo quang in c ch
to c c b mt chuyn tip P N ln nht, ngha l din tch nhn nh sng l
ln nht. Mt t bo quang in silicon n c th to ra khong 0,6V in th mt
chiu, vi nh sng mt tri trc tip 1 inch vung b mt P N c th to ra khong
160mA. tng dng v p ngi ta mc song song mt chui cc t bo quang in
to thnh pin mt tri cung cp cho cc thit b in t.
III. Transistor lng cc - BJT

Transistor = transfer reristor / in tr truyn t
Tn gi ca transistor xut
pht t cng dng c bn ca n l
c kh nng bin i in tr bn
thn nh iu khin bng dng hoc
p. Ngha l vic thay i gi tr
in tr ca linh kin c thc hin
t ng ch khng phi tc ng
bng tay nh i vi chit p. Ch
cn tc dng mt dng in nh vo
cc gc th in tr gia hai cc cn li s thay i ng vi cc trng hp:
+ Ni tr gim mnh, tc l transistor dn mnh
+ Ni tr tng, tc l transistor dn yu
Vi tnh cht c bn nh trn, s ra i ca transistor lm thay i hon ton xu
hng cng nh tc pht trin ca k thut in t, n l mt minh chng cho thi
im chm dt vai tr ca cc ng chn khng thay vo l cc thit b bn dn.
y thc s l mt bc ngot cho k thut in t ni ring v cuc sng ca con
ngi ni chung.
Transistor gm cc loi c bn l:
+ BJT (Bipolar Junction Transistor): transistor lng cc (hai mi ni)
+ JFET (Junction Field Effect Transistor): Transistor hiu ng trng mi ni
+ MOSFET (Metal Oxide Semiconductor FET): transistor hiu ng trng oxit
kim loi
+ UJT (Unijuntion Transistor): transistor n ni
Ngoi ra, ngi ta cn t tn cho transistor theo phng php cng ngh ch to:
80
Cu kin in t

transistor hp kim; transistor khuch tn; transistor plana
Di y ta s xt ti transistor lng cc BJT v gi tt l transistor. (cc loi
khc s ni ti phn IV, V)
1. Cu to v k hiu BJT
Cu to v k hiu ca transistor loi PNP v NPN
Transistor c to thnh bi 2 chuyn tip P - N ghp lin tip trn 1 phin n

tinh th. Ngha l v mt cu to transistor gm cc min bn dn P - N xp xen k
nhau. Do trnh t sp xp cc min P - N m ta c 2 loi cu trc transistor l PNP
(transistor thun) v NPN (transistor ngc).
Min th nht gi l min pht (emitor), in cc ni vi min ny gi l cc
emitor. Min gia gi l min bazo (min gc) in cc ni vi min ny gi l cc
bazo. Min cn li gi l min gp (min collector) in cc ni vi n gi l cc gp
(cc collector).
Chuyn tip P - N gia emitor v bazo gi l chuyn tip E-B hay l chuyn tip
emitor . K hiu l TE
Chuyn tip P - N gia bazo v collector gi l chuyn tip C-B hay chuyn tip
collector. K hiu l TC
V mt cu to c th xem transistor c to thnh t 2 diode mc ngc nhng
khng c ngha l c ghp 2 diode th s to ra c transistor .
3 min ca transistor c pha tp vi nng khc nhau v c rng cng
khc nhau. iu ny cho php cc min thc hin c chc nng ca mnh l:
+ Emtor ng vai tr pht x ht dn c iu khin trong transistor (pha tp nhiu).
Nn Emitor c nng pha tp nhiu nht.
+ Bazo ng vai tr truyn t ht dn t E sang C nn c nng pha tp mc
trung bnh s lng ht t E sang t b ti hp.
+ Collector ng vai tr thu gp ht dn t E qua B, do c nng pha tp t
nht in tr ca vng ny l ln nht.
to ra cc vng P - N xen k nhau trong tinh th bn dn ngi ta p dng cc
cng ngh khc nhau a tp cht acceptor (to bn dn loi P) v donor (to bn dn
loi N) vo bn dn nn. Tu theo cng ngh s dng m s phn b nng tp cht
trong cc min ca transistor ng u hay khng ng u.
Mt s kiu pha tp cht trong transistor c cho hnh sau:

P
S phn b tp cht ny (c
bit l trong min E v B) nh
hng rt ln n tham s in ca
transistor.
Nd
Transistor plana
Na
Nd
Transistor hp kim
Na
Nd
Transistor khuch tn hp kim
Na
Mt s dng pha tp cho BJT
Tu vo chiu in p phn cc cho chuyn tip emitor v chuyn tip collector

m c th phn bit 4 min lm vic ca transistor nh sau:
TE
Tc
Min lm vic
Phn cc thun
Phn cc thun
Min bo ho
ng dng
Kho in t
Phn cc thun
Phn cc ngc
Min tch cc
Khuch i
Phn cc ngc
Phn cc ngc
Min ct
Kho
Phn cc ngc
Phn cc thun
Min tch cc ngc
Cc cch k hiu trn thn transistor

K hiu ca transistor ph thuc vo tiu chun ca mi nc sn xut
+ K hiu theo tiu chun SNG
. K t th nht (hoc ch s) ch vt liu lm transistor
(hay 1): Ge; K (hay 2): Si ; A (hay 3 ): GaAs
. K t th hai ch loi linh kin
: diode; T: transistor; B: varicap; A: diode siu cao tn; : linh kin in quang
. Cc k hiu tip theo ch s series ca sn phm
82
Cu kin in t

V d: T403A: transistor loi Ge; KT312B: transistor loi Si
+ K hiu theo tiu chun ca Nht
. K t u ch hai loi linh kin
1 l diode ; 2 l transistor
. K t th 2 l ch S (semiconductor) ch linh kin bn dn
. K t th 3 ch chc nng
B- tn s thp loi PNP
A- tn s cao(f >5 MHz) loi PNP
C- tn s cao loi NPN
D- tn s thp loi NPN
F- linh kin chuyn mch PNPN cng P
H- linh kin 4 cc
G- linh kin chuyn mch NPNP cng N
. Cc k t tip ch s series ca sn phm
V d: 2SB405 :transistor bn dn tn s thp loi PNP
+ K hiu theo tiu chun M
. K t u ch s lp tip xc P - N ca linh kin
1- mt tip xc P - N (diode)
2- hai tip xc P - N (transistor )
3- ba tip xc P - N (thyristor,diac,triac,diode,diode 4 lp)
. K t th 2 l ch N
V d: 2N2222 transistor Si loi NPN c k hiu 2222
+ K hiu theo tiu chun chu u
. K t u ch vt liu bn dn
A- Ge
D- SbIn
B- Si
C- GaAs
. K t th 2 ch cng dng ca linh kin
A- diode tch sng
B- varicap
C- transistor tn s thp, cng sut nh
D- transistor tn s thp, cng sut
ln
E- diode tunen
F- transistor tn s cao, cng sut
nh
L- transistor tn s cao, cng sut cao P- linh kin quang
Y- diode nn in
Z- diode n p
V d: AF240 transistor Ge loi tn s cao
Tuy nhin bit cc thng s c th ca linh kin nh cng sut ln nht, tn s
gii hn, nhit chu ng, h s khuch i, vt liu th ta cn tra bng ca nh sn
xut.
Khi s dng transistor iu rt quan trng l phi xc nh chnh xc v tr cc
chn ca transistor, vic ny c th thc hin theo quy c ca nh sn xut (nh hnh
di y) hoc xc nh bng ohm k.
Di y l mt s hnh dng thc t ca mt s loi BJT m qua c th xc
nh c cc cc theo quy c ca nh sn xut.
2. Nguyn tc lm vic ca transistor ch tch cc (ch khuch i)
S phn cc cho transistor PNP v NPN ch tch cc
y l ch lm vic thng dng nht ca transistor. Khi ny transistor ng vai

tr l phn t tch cc c kh nng khuch i hay ni cch khc, trong transistor c qu
trnh iu khin dng, in p hay cng sut.
Nh ni, transistor lm vic ch tch cc cn cp ngun in mt chiu
sao cho TE phn cc thun v TC phn cc ngc.
Ni chung, cc transistor PNP v NPN c th hot ng nh nhau trong cc mch
in t nhng c im khc bit l o chiu s phn cc in p v hng ca dng
in. Do vy, y ta ch cn xt hot ng ca loi PNP nh sau:
+ Trong trng hp cha c in p ngoi t vo cc chuyn tip emtor v
collector th qua cc cc ca transistor khng c dng in, hai chuyn tip trng thi
cn bng. Hin tng khng c dng chy qua transistor cng xy ra khi t in p ln
cc C v E nhng cc B h.
+ Khi phn cc cho transistor, trng thi cn bng ban u b ph v. TE c phn
cc thun nn cc ht a s trong emitor (l l trng) tng cng khuch tn sang base.
Khi ny ht a s trong base (l in t) cng khuch tn sang emitor nhng do nng
pha tp trong base t nn thnh phn ngc ny khng ng k. Cc ht a s ca emitor
phun vo base v tr thnh cc ht thiu s tri. Do chnh lch nng m chng s
khuch tn ti b min in tch khng gian ca chuyn tip TC. Ti y do chuyn tip
TC phn cc ngc nn s cun tri cc ht thiu s sang min collector. Nu s phn
cc vn tip tc c duy tr th r rng trn 3 cc ca transistor s xut hin dng in.
C th biu din cc thnh phn dng in v in p trong transistor nh sau:
84
Cu kin in t
IE
IC
IE
IC
ICBo
E
IB
Cc thnh phn dng in v in p trn cc chn cc ca transistor loi PNP
Dng in cc emitor IE khi i vo min base, mt phn ti hp vi in t, phn

cn li s qua TC sang min collector v to nn dng cc gp IC. Khi ta c:
I C = .I E
vi l h s truyn t dng in (hay h s khuch i dng in cc pht)
= s l trng khng b ti hp / tng s l trng xut pht t cc emitor
0,95 0,999
Ngoi ra, qua chuyn tip TC cn c thnh phn dng in ngc do bn thn TC
phn cc ngc. y l dng ca ht thiu s ca min base chuyn ng di tc ng
ca in trng. Dng in ngc ny cn gi l dng r cc base ICB0. ICB0 khng ph
thuc vo dng IE nn khng iu khin c, n ph thuc nhiu vo nhit v l
thnh phn dng khng cn thit.
Vy dng tng qua cc gp thc cht l: I C = .I E + I CB 0
Dng in cc gc IB l dng l trng v in t ti hp nhau tr i thnh phn
dng ngc ICB0
IB = (1- )IE ICB0
Nh vy quan h gia cc thnh phn dng trong transistor l:
IE = IC + IB
I
gi l h s truyn t ca transistor
= C =
IE 1+
I
= c =
gi l h s khuch i ca transistor (gi tr t vi chc
IB 1
ti vi trm, gi tr in hnh 50 150)
l thng s nh gi tc dng iu khin ca dng IB ti dng IC
2 tham s v c gi tr xc nh i vi mi loi transistor v c ghi
trong bng thng s k thut.
Kh nng khuch i ca transistor :
Khi t gia cc emito v bazo mt ngun tn hiu U~ th in p phn cc cho TE
s thay i, tc l lm thay i dng phun t emito sang bazo (IE). Tuy in p phn cc
cho TC khng i nhng do s ht thiu s tri trong min bazo thay i nn dng ngc
qua chuyn tip TC (dng IC) cng thay i theo ng quy lut ca tn hiu u vo.
Nu mc in tr ti cc collector th in p ri trn in tr ny cng c quy
lut bin thin nh in p tn hi t u vo. Thm vo , trong khi in tr ca
E-B khng ng k th in tr ca B-C li rt ln v dng IC xp x dng IE nn theo

nh lut Ohm in p ca tn hiu li ra ln hn rt nhiu ln in p ca tn hiu
li vo. y chnh l kh nng khuch i ca transistor. Xem hnh di y
Trong k thut in t ngi ta cn gi h s khuch i cc pht l h s

truyn t vi phn dng cc pht
I
dI
= C = C
UC = const
dI E I E
= 0,95 0,99
Dng cc gp IC to ra trn ti Rt mt in p thay i theo s thay i ca in p
tn hiu
UR t = IC.Rt = .IE.RT = .IB.Rt
Khi h s khuch i c tnh:
UR
R
KU = t t >1
U~
Rv
3. Transistor lm vic nh kho in t
y l ch lm vic thng dng th 2 ca transistor, ch lm vic ny ca
transistor cn gi l ch ng m. Khi ny n ch c 2 trng thi n nh: hoc ng
(ni mch cho dng qua transistor) hoc m (ngt mch khng cho dng chy qua
transistor).
i khi transistor chuyn dng lm vic ch ng m cn gi l transistor
xung v c th coi chng lm vic ch xung.
Trong k thut iu khin t ng v k thut s ni chung cc transistor hu ht
u hot ng nh kho in t .
86
Cu kin in t

a. Ch ngt
S mch in transistor trong ch ngt v s tng ng
ch ngt ngun mt chiu c cp cho transistor sao cho c 2 chuyn tip

TE v TC u phn cc ngc. Lc ny qua 2 chuyn tip ch c dng in ngc IEBo v
ICBo nn c th coi mch cc pht h v coi in tr ca transistor rt ln, dng qua
transistor bng 0. Nh vy transistor nh 1 kho trng thi m. Khi in p UCE
c tnh bng:
UCE EBC
b. Ch dn bo ho
S mch v s tng ng ca transistor ch bo ho
Transistor c phn cc sao cho chuyn tip TE v TC u phn cc thun. Khi

in tr ca c 2 chuyn tip u nh nn c th coi 2 cc pht v gp c ni tt.
Dng qua transistor IC khi ny kh ln v ch ph thuc vo in p ngun cung
cp EC v khng ph thuc vo transistor . Khi ny:
E
v UCE 0 (thc t thng ly = 0,3 V)
IC = C
RC
Hai ch ngt v bo ho ca transistor c s dng trong k thut xung v k
thut mch logic. y in p t ln li vo ch c 2 mc l mc cao v mc thp
Nu UBE = mc thp th transistor ngt li ra c UCE EC

UBE = mc cao th transistor dn bo ho li ra c UCE = 0
Nh vy transistor lm vic nh 1 phn t tuyn tnh khng c kh nng bin i
Ura
UHo
Ngt
Tch cc
Dn bo ho
ULo
Uvo
ULi
UHi
c tuyn truyn t ca transistor lm vic ch ng m
tn hiu v lm vic nh 1 kho in t

4. c tnh tn s ca Transistor
Khi a mt tn hiu c tn s cao vo transistor th kh nng khuch i ca
transistor i vi tn hiu ny b gim i so vi tn hiu c tn s thp hn. Hin tng
ny l do nh hng ca mt s thng s sau:
+ in dung ca cc chuyn tip TE
v TC ng k
+ Tr khng ca cc min bn dn
(base v collector)
+ Thi gian chuyn di cc ht dn
thiu s qua base
nh gi c tnh tn s ca
transistor ngi ta s dng tham s f gi l tn s gii hn ca transistor. Tn s gii
hn f l tn s m ti tn s ny khuch i ca transistor trong s gc chung BC
gim i 3dB.
S ph thuc ca h s khuch i
S BC
vo tn s c th hin trong hnh sau:
3dB
f l tn s gii hn i vi s
mc emito chung EC
S EC
C th tnh f theo cng thc sau:
1
W2
d
= RE .CTE +
+
+ RC .CTC
f
2f
2.48D pB 2VC
f0
f f
c tnh tn s ca Transistor
vi:
RE l in tr ca min bn
dn cc pht
CTE l in dung ca lp chuyn tip TE
W l b dy ca min base
88
Cu kin in t

DpB l di khuch tn ca l trng trong min base
d l b dy lp chuyn tip TC
VC l vn tc chuyn di cc ht dn qua chuyn tip TC
RC l in tr min gp collector
CTC l in dung ca lp chuyn tip TC
Nh vy nu tng mt trong cc thng s R, C, W v d th u lm gim f
f = K (1 ). f vi K l hng s cng ngh (0,5 1)
5. Phn cc v nh im lm vic cho Transistor
a. Nguyn tc chung
Transistor lm vic cn t in p ngoi ln chuyn tip emito va colecto vi
cc tnh v tr s thch hp, vic ny gi l phn cc (hay phn p, nh thin) cho
transistor hay xc nh im lm vic tnh cho transistor. V tr ca im cng tc tnh
quyt nh ch lm vic ca mch, v vy tu vo mc ch s dng m phn cc cho
ph hp.
Trong trng hp transistor lm vic ch khuch i cn t in p mt
chiu ln cc chn cc sao cho chuyn tip TE phn cc thun v chuyn tip TC phn
cc ngc.
C
B
E
VC > VB > VE
VC < VB < VE
Nguyn tc phn cc cho Transistor loi NPN v PNP ch khuch i
ng ti tnh v im cng tc tnh

Xt mt s phn cc cho transistor nh
hnh bn:
Khi ny phng trnh biu din mi quan h
gia dng v p ra mt chiu gi l ng ti tnh.
C th y l phng trnh gia IC v UCE. Ta c:
UCE = UCC IC.Rt
V ng ti tnh trn c tuyn ra ta c
hnh di y:
+ UCC
RB
Rt
B
UBE
C
UCE
E
IC (mA)
IB = 80 A
UCC/Rt
IB = 60
IB = 40
UCC
IB = 10
IB = 0
UCE(V)
ng ti tnh v im cng tc Q
Giao im ca ng ti tnh v ng c tuyn ra gi l im cng tc tnh Q.

Vic chn Q c ngha rt ln i vi ch lm vic ca transistor (s c xem
xt c th trong gio trnh K thut mch in t), thng thng ngi ta chn Q nm
gia ng ti tnh tn hiu u ra c th c bin ln nht m khng b mo. Khi
Q dch khi v tr gia th tn hiu ra khng b mo th tn hiu phi c bin nh.
Di y l mt s s phn cc ph bin nht. (s phn cc cho NPN hay
PNP l hon ton tng t nh nhau nhng o chiu ngun cung cp)
b. Mch phn dng c nh
Hnh bn l s mch phn dng c nh cho transistor loi NPN
Trong :
EC l ngun cung cp mt chiu
RB u t dng ngun Ec v cc gc dn in p dng
v cc gc.
RC dn in p t dng ngun Ec v cc gp.
Dng in IB chy t dng ngun Ec qua RB , qua BJT v
m ngun.
Dng in IC chy t dng ngun Ec qua RC , qua BJT v
m ngun.
y l s ly tn hiu ra trn cc C (s emito chung)
nn phng trnh ng ti tnh chnh l phng trnh th hin
mi quan h gia dng in v in p u ra, tc l gia IC v UCE
UCE = Ec IC.RC
Vy ng ti tnh chnh l ng ni 2 im (0, Ec/RC) v (Ec, 0)
Khi ny v tr ca im lm vic tnh c xc nh ti Q (UCEQ, ICQ) nh sau:
Ec U BE
.
Xc nh I CQ = .I B vi I B =
RB
Thay ICQ vo phng trnh ng ti tnh tnh c UCEQ.
Trong s trn dng IB c gi tr c nh nn n nh ca s ny khng tt.
90
Cu kin in t

c. Mch hi tip m in p
S nh hnh bn.
Hi tip m in p l hin tng mt phn in p ra
c a ngc tr li u vo sao cho tc dng cu n ngc
pha vi in p vo.
EC l ngun cung cp mt chiu
RC dn in p t dng ngun Ec v cc gp.
Trong s ny in tr RB khng ni trc tip vi ngun
EC m ni gia cc C v cc B. Ngha l cc B c cp ngun
t RC, qua RB.
S ny c n nh tt hn s trn do s thay i ca IC c hi tip tr
li u vo lm cho dng IB thay i theo hng ngc li gi n nh cho dng IC.
C th nh sau:
Nu v mt l do no dng IC tng ln (c th do nhit tng) th st p trn
RC tng, do vy in p ti cc C l VC gim xung. Mt khc, VB = VC IB.RB do VB
cng gim xung, lm cho gc m UBE nh
li, BJT dn yu i, tc l cc dng qua BJT
gim (IC gim chng li s thay i ban u).
Qu trnh hon ton ngc li khi IC gim.
Nh vy, nh in tr hi tip m RB m
im lm vic tnh ca mch s n nh hn.
loi b thnh phn xoay chiu ca
tn hiu hi tip tr li u vo lm gim h
s khuch i ca mch ngi ta mc thm
t nh hnh bn.
d. Mch hi tip m dng in (mch t
phn cc)
S cho hnh bn.
R1, R2 to thnh mch phn p cp in p cho
cc B
RC dn in p dng ngun v cc C.
RE to in p trn cc E tu vo gi tr dng IE i qua
BJT (do vy gi l t phn cc)
y l s c n nh tt nht so vi cc s
trn.
Dng in trn RE s to mt st p trn n c xu
hng chng li s phn cc thun ca lp tip xc pht.
S n nh dng IC nh sau: nu v l do no dng chy qua cc cc ca
transistor tng ln (v d nhit tng), trong s gia tng ca dng IC l nguy him
nht. Dng IE tng lm cho st p trn RE (l UE) tng. M ta li c UBE = UB - UE khi
UE tng th UBE gim, ngha l transistor dn yu i v IC s gim theo. Hin tng ngc
li khi IC gim. Nh vy dng IC c n nh.
Ch : Trn thc t, ngi ta thng s dng phng php b n nh im lm vic.

Phng php ny s dng diode b li s bin thin ca in p UBE v dng ICBo (do
diode c h s nhit m). u im ca phng php b l khng lm mt mt h s
khuch i nhng tc ng ca chng khng tc th nh phng php hi tip m.
6. n nh im cng tc tnh
Nh ni, v tr ca im lm vic tnh rt quan trng trong hot ng ca BJT.
Nguyn nhn dn n s thay i v tr ca im Q c kh nhiu nh nhit thay i,
s ho gi ca linh kin theo thi gian hot ng, s khng n nh ca ngun cung
cp ... Trong yu t v nhit l yu t thng xuyn tc ng v c th hn ch
c. Do tnh cht chung ca bn dn l c tnh in ph thuc vo nhit nn dng
in v in p trn transistor ph thuc rt nhiu vo nhit . Ngha l im lm vic
tnh s b di chuyn khi nhit thay i.
Xt v nguyn nhn su xa nh hng ca nhit chnh l nh hng ti hai
tham s l dng ngc ICB0 v in p UBE.
UBE bin i 2,2mV/0C i vi transistor loi Si v -1,8mV/0C i vi
transistor Ge.
ICB0 tng gp 2 ln khi nhit tng 100C
Kt qu ca vic thng ging 2 tham s trn s lm cho dng IC thay i rt nhiu
(ngha l Q dch chuyn v tr). th hin nh hng ca ICB0 v UBE ti dng IC ngi
ta a ra 2 tham s s v s. Trong , s l h s n nh nhit ca dng IC theo ICB0 v s
l h s n nh nhit ca dng IC theo UBE.
I C
I C
v s ' =
s=
I CB 0
U BE
C:
I C = h21e .I B + (1 + h21e ).I CB 0
I C = h21e .I B + (1 + h21e ).I CB 0
1 = h21e .
I
I B
+ (1 + hh 21e ). CB 0
I C
I C
I C
=
I CB 0
1 + h21e
I
1 h21e . B
I C
Vi h21e l h s khuch i dng trong s EC
Nu dng IB khng i th s = 1 + h21e
Mun n nh nhit cc gi tr s v s cng nh cng tt.
s=
7. Cc cch mc c bn ca transistor lm vic ch khuch i

Khi mc transistor vo trong mch v nguyn tc c 6 s (coi transistor c 3
chn nh mt mng 4 cc vi 2 u vo v hai u ra) nhng trn thc t ch c 3 cch
mc EC, BC v CC l c th khuch i cng sut, 3 cch cn li khng c ngha trong
thc t.
92
Cu kin in t

a. S mc cc gc chung (BC - base common)
EE, EC l in p mt chiu cung cp cho T
S mc cc gc chung cho transistor PNP
RE l in tr nh thin c nhim v to st p ca EE phn cc thun cho TE

v a tn hiu vo.
RC l in tr ti to st p dng xoay chiu ca tn hiu v a in p m t
EC ln cc collector TC phn cc ngc
C1, C2 l t ghp tng c nhim v dn tn hiu vo mch v dn tn hiu ra
Tn hiu xoay chiu c a vo cc emitor v base. Tn hiu sau khi khuch i
c ly ra gia collector v base nn s ny c gi l s mc base chung.
Cc h c tuyn tnh
+ H c tuyn vo
H c tuyn vo m t mi quan h gia dng in vo IE v in p vo UEB
U EB = f ( I E ) U CB = const
v c c tuyn ny
ngi ta gi UCB gi tr khng
i, thay i gi tr UEB sau ghi
li gi tr IE. Kt qu l ta c
cc ng c tuyn ng vi mi
gi tr ca UCB.
TE lun phn cc thun nn
h c tuyn vo ca s BC
ging nh phn c tuyn thun
ca diode.
in p UCB cng ln th TC
c phn cc cng mnh lm cho
rng hiudng ca min base
cng hp v do dng IE tng
ln.
IE (mA)
40
UCB h
UCB =0
30
UCB =-10
20
UCB =-20
10
0
0,2 0,4 0,6
UBE (V)
H c tuyn vo ca transistor Ge loi PNP trong s BC
+ H c tuyn ra
H c tuyn ra biu th mi quan h gia dng in v in p cc gp. kho
st mi quan h ny cn loi b nh hng ca dng IE bng cch gi IE gi tr xc
nh trong qu trnh kho st (mi gi tr c nh ny cho mt ng c tuyn ra v tp

hp ca nhiu c tuyn ra cho ta h c tuyn ra ng vi cc gi tr ca IE khc nhau).
IC (mA)
Tch cc
40
IE = 40mA
30
IE = 30
Dn bo ho 20
IE = 20
10
IE = 10
nh thng
IE = 0
0
-2
UCB (V)
-8
Ngt
H c tuyn ra ca transistor Ge loi PNP trong s BC
Khi UCB cn nh, on c tuyn ra gn nh nm ngang th hin gi tr IC IE

Khi UCB tng mnh lm min SCR ca chuyn tip TC rng ra ti mc tip xc
vi min SCR ca chuyn tip TE IC b tng t ngt v gy ra hin tng nh thng
lm h hng BJT.
c im ca s BC:
+ Tn hiu vo v tn hiu ra ng pha
+ Tr khng vo nh: 30 300
+ Tr khng ra ln: 100k
I
+ H s khuch i cc pht = C =0,95 : 0,99
IE
+ H s khuch i in p KU
U ra
I C .Z t
Z
=
t = (102 103) (ph thuc vo in tr ti)
KU=
U vao I E .Z vao Z vao
+ H s khuch i cng sut KP
T cc biu thc trn c th thy rng mc d khng c kh nng khuch i
dng in nhng do c khuch i in p nn vn c h s khuch i cng sut c vi
trm ln
+ Dng r ICB0 nh vi BJT loi
Si : t vi nA ti vi A
Ge :vi chc A
+ Tn s lm vic gii hn cao do in dung tip gip nh
+ S BC c n nh nhit cao, tn s lm vic cao. Thng s dng cc
mch cao tn, tng dao ng ni cho my thu thanh, tng tin khuch i cho my tng
m hay tng khuch i c s kiu y ko cho my tng m.
94
Cu kin in t

b. S mc cc pht chung (EC - Emitter Common)
S mc cc pht chung ca transistor loi PNP
EB, EC l in p mt chiu cung cp cho T

RB l in tr nh thin c nhim v to st p ca EB phn cc thun cho TE
v a tn hiu vo.
RC l in tr ti to st p dng xoay chiu ca tn hiu a ra mch sau v
a in p m t EC ln cc collector TC phn cc ngc
C1, C2 l t ghp tng c nhim v dn tn hiu vo mch v dn tn hiu ra, ng
thi ngn cn thnh phn dng mt chiu t tng ny sang tng kia.
in p tn hiu xoay chiu cn khuch i c a vo gia cc gc v cc pht.
Tn hiu sau khi khuch i c ly ra gia cc gp v cc pht
Cc h c tuyn tnh:
+ H c tuyn vo m t mi quan h gia in vo UBE vi dng in IB.
U BE = f ( I B ) U CE const
IB (mA)
UCE =-10V
0,4
UCE =5
0,3
UCE =-2
0,1
UCE =0
0,1
0
-0,2 -0,4 -0,6
UBE (V)
H c tuyn vo ca transistor Ge loi PNP trong s EC

Nhn xt:
Khi in p UBE > 0 th tip xc pht TE phn cc ngc, IE ~ 0 nn IB ~ 0
Khi in p UBE < 0 th TE phn cc thun v lc c hin tng chch cc ht
dn vo min gc v do c hin tng ti hp trong min gc v trong mch cc gc
s c thnh phn dng in ti hp nn IB c tnh nh sau:
I B = (1 ) I E I CB 0
Do dng in IE tng theo quy lut hm s m vi UBE nn IB cng tng theo quy
lut hm m vi UBE
Khi thay i in p trn mch ra UCE th dng in vo IB thay i rt t. Khi UCE
cng m th dng IB gim mt cht do ICB0 tng.
+ H c tuyn ra biu th mi quan h gia dng in trn mch ra IC v in p
trn mch ra UCE
I C = f (U CE ) I B = const
c th tnh IC nh sau: I C =
.I B +
I CB 0 = .I B + ( + 1).I CB 0
1
1
IC (mA)
Ch tch cc
IB = 0.35mA
40
IB = 0,25
Pttmax
30
Ch
dn bo
IB = 0,1
20
ho
10
IB = 0
IB = -ICBo
-2 Ch ngt
-10
UCE(V)
y chnh l biu thc biu th mi quan h gia dng in iu khin (IB) v

dng in b iu khin (IC) trong s mc cc pht chung.
Nhn xt:
IC c gi tr cc tiu khi c TE v TC u phn cc ngc, transistor lm vic ch
ngt. Lc ny IC = ICB0
Khi IB = 0 tc l in p UBE bt u phn cc thun cho TE, IC = (+1)ICB0
Khi tng in p trn mch ra (UCE m hn) th dng in cc gp IC khng gi
nguyn m tng ln do TC b phn cc mnh hn nn rng min base gim, dng ti
hp gim, do vy h s khuch i dng in cc pht tng v h s khuch i dng
in cc gc cng tng.
96
Cu kin in t

c im ca s mc cc pht chung
.Tn hiu vo v ra ngc pha nhau
.Tr khng vo b (nhng ln hn
trong s BC ) 200 2000
. Tr khng ra ln (nhng nh hn
trong s BC ) 20k 100k
. H s khuch i dng cc gc
I
= C =
(vi chc n vi
IB 1
trm ln)
. H s khuch i KU
U ra
KU=
= S ( RC // rCE ) (c gi
U vao
tr t 103 104 ln)
P
. H s khuch i cng sut KP= ra vi chc
Pvao
. Dng in r ICeo (ln hn BC)
Si: vi : vi chc A
Ge: vi trm A
. Tn s lm vic kh cao (thp hn BC) do in dung nh
S ny c s dng rng ri do c , KU, KP rt ln. Mch lm vic n nh
v nhit, tr khng u vo/ra chnh lch t.
c. S mc cc gp chung (CC Collector common) (cn gi l s lp cc
pht)
Hnh bn l mt s mc transistor
kiu colecto chung.
Trong :
EB, EC l in p mt chiu cung cp
cho transistor
RB l in tr nh thin c nhim v
to st p ca EB phn cc thun cho TE
v a tn hiu vo.
RE l in tr phn cc cho cc E v
l in tr ti to st p dng xoay chiu
ca tn hiu a ra mch sau
C1, C2 l t ghp tng c nhim v dn tn hiu vo mch v dn tn hiu ra
Nh th tn hiu cn khuch i c a vo gia cc gc v cc gp, tn hiu
sau khi khuch i c ly ra trn RE t gia cc pht v cc gp. Cc gp chnh l
cc chung ca mch vo v ra nn s c gi l mc cc gp chung.

c im ca s mc cc gp chung:
. Tn hiu vo v tn hiu ra ng pha
. Tr khng vo ln
Z vao = RE = 20 K 500 K
. Tr khng ra nh Z ra = 50 5K
. H s khuch i in p
U ra
U BC U BE
Ku =
<1
=
U BC
U vao
thng ly Ku ~1.
. H s khuch i dng in cc gc
I
1
Ki = E =
= +1
IB 1
v >> 1 nn h s khuch i dng in
trong s mc cc gp chung tng ng vi h s khuch i dng in ca s
mc cc pht chung.
. H s khuch i cng sut KP c tr s t vi chc n vi trm ln
. Dng in r nh v c tr s tng ng nh trong s mc cc pht chung
. Tn s lm vic gii hn cng c gi tr ging nh s mc cc pht chung
Do c tr khng vo rt ln nhng tr khng ra li rt nh nn s ny thng
c dng nh mt b bin i tr khng, tc l phi hp tr khng gia mt mch c
tr khng ra cao v mt mch c tr khng vo thp.
c tuyn v tham s ca s mc cc gp chung cng tng t nh s
mc cc pht chung.
IV. Transistor hiu ng trng (FET Field effect Transistor)

1. Khi nim chung
a. Nguyn tc hot ng
Nguyn tc hot ng c bn ca FET l lm cho dng in cn iu khin i qua
mt mi trng bn dn c tit din dn in thay i di tc dng ca in trng
vung gc vi lp bn dn . S thay i cng in trng s lm thay i in tr
ca lp bn dn v do lm thay i dng in i qua n. Lp bn dn ny c gi l
knh dn in. y l im khc bit so vi BJT v BJT dng dng in cc gc iu
khin.
Trong FET, dng in hnh thnh do mt loi ht dn duy nht, hoc l in t
hoc l l trng.
b. Phn loi
Transistor trng c 2 loi l:
+ Transistor trng c iu khin bng tip xc P - N (hay cn gi l transistor
mi ni JFET- Junction field effect transistor)
+ Transistor c cc ca cch in (IGFET insulated gate field effect transistor)
98
Cu kin in t

hay MOSFET (metal oxide semiconductor field effect transistor).
MOSFET c chia lm 2 loi l MOSFET knh c sn v MOSFET knh cm
ng
Mi loi FET trn li c chia thnh loi knh N hoc knh P (tu theo ht dn
in l in t hay l trng)
c. K hiu FET trong s mch
Knh N
Knh P
JFET
Knh N
Knh P
MOSFET knh c sn
Knh N
Knh P
MOSFET knh cm ng
K hiu FET
S: source cc ngun m qua cc ht a s i vo knh v to ra dng in

ngun IS
D: drain cc mng l cc m cc ht dn a s ri khi knh dn
G: gate cc ca l cc iu khin dng in chy qua knh dn
d. u im v nhc im ca FET
u im:
+ Tr khng vo rt cao
+ Tp m t hn nhiu so vi transistor lng cc
+ n nh nhit cao
+ Tn s lm vic cao
Nhc im:
+ Cng ngh ch to phc tp nn kh sn xut hn BJT
+ H s khuch i thp hn nhiu so vi BJT
2. Transistor trng iu khin bng tip xc P - N (JFET)
a. Cu to v nguyn tc hot ng
JFET c cu to gm c mt ming bn dn mng loi N (ta c JFET knh loi N)
hoc loi P (ta c JFET knh loi P) gia 2 tip xc P - N v c gi l knh dn in.
Hai u ca ming bn dn c a ra 2 chn cc gi l cc mng (D) v cc ngun
(S). Hai ming bn dn 2 bn ca knh c ni vi nhau v a ra mt chn cc gi
l cc ca (G)
Cu to ca JFET knh dn loi P v N
Cc JFET hu ht l loi c cu trc i xng, ngha l khi u trong mch c th

i ch 2 chn cc mng v ngun m tnh cht v tham s ca FET khng thay i.
Nguyn tc lm vic:
Mun JFET lm vic ch
khuch i cn phi cung cp ngun
in mt chiu gia cc ca v cc
ngun UGS c chiu sao cho c 2 tip
xc P - N u c phn cc ngc cn
ngun in cung cp gia cc mng v
cc ngun UDS c chiu sao cho cc ht
dn a s phi chuyn ng t cc
ngun S i qua knh v cc mng to
nn dng in cc mng ID.
S phn cc cho JFET knh N v knh P
JFET knh N v knh P c nguyn tc hot ng ging nhau. Chng ch khc

nhau v chiu ca ngun in cung cp l ngc chiu nhau. y ta xt trng hp
JFET knh loi N.
Vi JFET knh loi N cn mc ngun cung cp sao cho:
UGS < 0 2 chuyn tip P v N phn cc ngc
UDS > 0 in t di chuyn t S ti D
100
Cu kin in t
im tht knh dch chuyn v pha S khi tng UDS
Khi UDS > 0 th in th ti mi im dc theo knh t cc ngun S n cc

mng D s tng t 0V ti UDS cc mng D, do chuyn tip P - N phn cc ngc
mnh dn v pha cc mng lm cho b dy lp chuyn tip tng dn v pha D v tit
din ca knh s hp dn v pha cc mng D. (cng tng UDS th im tht cng dch v
pha S, ngha l hin tng tht knh dn sm xy ra).
Hnh di y minh ho hnh nh knh dn b tht khi tng UDS.
b. c tuyn truyn t, c tuyn ra

UGS ngt l in p ngc ln nht m ti ID = 0, hai min in tch khng gian
ca 2 chuyn tip P - N ph trm ln nhau, knh dn bin mt, dng qua knh bng 0.
Qua ng c tuyn truyn t ta
thy: khi thay i in p trn cc ca th
b dy ca lp tip xc P - N s thay i
lm cho tit din ca knh cng thay i
theo, ko theo in tr ca knh thay i
v cng dng in qua knh cng
thay i. Nh vy in p trn cc ca UGS
iu khin c dng in cc mng
ID.
Khi t in p UDS ln gia cc
mng D v cc ngun S th s c mt
c tuyn truyn t ca JFET knh loi N
dng in ID chy qua knh. V dng in
khng chy trong vng ngho ht dn nn
ta c th tnh nh sau:

I D = S .q.N D . n .E = 2b.w.q.N D . n
U DS
L
S = 2bw l tit din ca knh dn

2b l rng ca knh tng ng vi khi dng in ID = 0
w l kch thc vung gc vi hng b ca knh
L l chiu di knh dn
UDS l in p t gia cc mng v cc ngun
Nhn xt c tuyn ra:
. Vng gn gc: ID t l tuyn tnh theo UDS. JFET ging nh mt in tr thun
. Vng tht (vng bo ho): ID ph thuc
vo UGS, JFET hot ng nh phn t khuch i,
dng ID c iu khin bng in p UGS. im
A c gi l im tht ca knh, ti 2 tip
xc P - N chm nhau v tr s in p UDS t gi
tr bo ho.
. Vng nh thng: khi tr s UDS tng qu
cao tip xc P - N b nh thng, dng in ID
tng vt. im B c gi l im nh thng.
Trn thc t hin tng ny him khi xy ra.
c tuyn ra ca JFET knh loi N
Ch : UGS cng m th im A v B cng gn

gc, ngha l qu trnh bo ho v nh thng
sm xy ra khi tng dn UDS.
Bng: Gi tr mt s tham s ca FET
Tham s
h dn S
in tr cc mng rd
in dung gia cc mng
v cc ngun Cds
in dung gia cc ca
v cc cc ngun, mng
Cgs, Cgd
in tr gia cc ca v
cc ngun rgs
in tr gia cc ca v
cc mng rgd
JFET
0,1 10 mA/V
0,1 1 M
MOSFET
0,1 20 mA/V
1 50 K
0,1 1 pF
0,1 1 pF
1 10 pF
1 10 pF
> 108
> 1010
> 108
> 1014
3. Transistor trng loi MOSFET

y l loi transistor trng c cc ca cch in vi knh dn in bng mt lp
cch in mng. Lp cch in thng c dng l cht oxit nn transistor trng loi
ny cn c gi l transistor MOS.
102
Cu kin in t

a. Cu to ca MOSFET
in cc ca ca MOSFET c cch
in i vi knh dn in bng mt mng
in mi mng thng l oxit silic (SiO2).
ca linh kin l mt cht bn dn khc
loi vi cht bn dn lm cc S v D. (MOS
Metal oxit semiconductor)
MOSFET c 2 loi l MOSFET knh
c sn (cn gi l DMOSFET - Depleted
MOSFET - loi ngho) v MOSFET knh
cm ng (cn gi l EMOSFET Enhanced
MOSFET - loi giu). Trong mi loi ny
li c 2 loi l knh dn loi N v knh dn
loi P.
MOSFET knh c sn l loi
transistor m khi ch to ngi ta ch to
sn knh dn. Loi ny c nhc im l c dng r ln nn hin nay ngi ta s dng
loi ny rt t.
K hiu ca loi DMOSFET nh sau:
MOSFET knh cm ng l loi transistor khi ch to ngi ta khng ch to sn

knh dn m knh dn c hnh thnh trong qu trnh transistor lm vic. K hiu ca
EMOSFET nh sau:
Di y l mt s hnh nh pha tp thc t to EMOSFET loi N.

b. Nguyn tc lm vic
Nguyn tc hot ng ca MOSFET knh loi P v MOSFET knh loi N ging
nhau nhng cc tnh ngun cung cp ngc nhau.
MOSFET knh c sn (loi N)
Khi transistor lm vic thng thng cc ngun S c ni vi ca linh kin
v ni t nn US = 0. Cc in p t vo cc chn cc ca G v cc mng D l so vi
chn cc S.
Cc chn cc c cp ngun sao cho dng in chy t cc S ti cc D, in p
trn cc ca s quyt nh MOSFET lm vic ch giu ht dn hay ngho ht dn.
Khi UGS = 0 trong mch vn c dng in cc mng (dng cc ht in t) ni
gia cc S v cc D
Khi UGS > 0 in t b ht vo vng knh i din vi cc ca lm giu ht dn
cho knh, tc l lm gim in tr ca knh do tng dng cc mng ID. Ch lm
vic ny gi l ch giu ca MOSFET
Khi UGS < 0 qa trnh xy ra ngc li, tc l in t b y ra xa knh dn lm
in tr ca knh tng ln, do vy dng cc mng ID gim. Ch ny gi l ch
ngho ht dn ca MOSFET.
Ch giu
ht dn
Ch ngho
ht dn
H c tuyn ra ca MOSFET knh c sn loi N
MOSFET knh cm ng (loi N)

Loi MOSFET ny knh dn ch xut hin trong qu trnh lm vic
Khi UGS 0, knh dn khng tn ti, dng ID = 0
Khi UGS > 0 ti vng i din cc ca xut hin cc in t t do v hnh
thnh knh dn ni gia ngun v mng. dn in ca knh ph thuc vo UGS. Nh
vy, MOSFET knh cm ng ch lm vic vi mt loi cc tnh ca UGS v ch ch
giu.
Di y l hnh minh ho cho cc trng hp trn vi tng loi EMOSFET.
104
Cu kin in t
H c tuyn u ra ca EMOSFET
H c tuyn ra ca MOSFET knh cm ng loi N
c. Cc s mc FET
Cng nh BJT, FET c 3 cch mc c bn trong cc s khuch i: s mc
cc ngun chung, mc cc mng chung v mc cc ca chung.
S mc cc ngun chung (SC source common)
S mc cc ngun chung ca FET ging nh s mc cc pht chung i
vi BJT nhng c im khc l dng IG thc t bng 0 v tr khng vo rt ln.
c im ca s SC:
+ Tn hiu vo v tn hiu ra ngc pha
+ Tr khng vo v cng ln Z vao = RGS

+ Tr khng ra Zra = RD // rd
+ H s khuch i in p
~ (150 300 ln i vi JFET
knh N v 75 150 ln i vi
JFET knh P)
S mc ngun chung ca JFET knh loi N
S mc cc mng chung (DC drain common)

S mc cc ca chung ging nh
s mc cc gp chung ca BJT
c im ca s DC:
+ Tn hiu vo v tn hiu ra ng
pha
+ Tr khng vo cc ln (ln hn c
trong s SC)
+ Tr khng ra rt nh Zvo = RS //
1
S
+ H s khuch i in p < 1
S mc cc mng chung ca JFET knh N
S mc cc ca chung (GC gate common)
S mc cc ca chung ca JFET knh N
S ny khng c dng trn thc t do c tr khng vo rt nh cn tr khng

ra rt ln nn khng s dng c li th ca FET.
106
Cu kin in t

V. Mt s loi linh kin tch cc khc
1. Transistor mt tip gip (UJT)
a. Cu to v k hiu
UJT l transistor mt tip gip (Uni-junction Transistor) tc UJT l mt linh kin
c mt chuyn tip n, ging nh Diode. Tuy nhin, cu trc chi tit ca n li khc.
N gm mt phin bn dn silic loi N (hay P) hai u gn in cc gi l cc base 1 v
base 2. Trn phin bn dn ny, gn hn vi base 2 c mt chuyn tip P-N nh ch ra
hnh di y. in cc th 3 c gi l emitter.
K hiu ca Transistor mt tip gip UJT (hnh a l cu to v k hiu ca UJT
loi P, hnh b biu din loi N)
Tr khng gia base 1 v base 2 c o khi dng emitter = 0 c gi l tr
khng gia cc base RBB v c gi tr in hnh khong 5K 10 K.

b. Nguyn tc hot ng
Hnh bn ch ra mch tng ng n gin ca UJT vi
cc Base loi N. Tr khng RBB c phn i bi chuyn tip
P-N (biu th bi diode) thnh 2 in tr RB1 v RB2 , m tng
ca n bng RBB .
Trong ch hot ng thng thng, in p VBB c
cung cp cho base 1 v base 2, vi base 2 dng hn so vi 1.
Khi khng c dng IE , phin bn dn s hot ng ging nh
mt b phn p n gin v c mt phn in p xc nh ca
VBB xut hin trn RB1. T s n c gi l t s cn bng ni
v gi tr ca n khong 0,5 n 0,9 . T s ny c cho bi:
R B1
n=
RB1 + RB 2
in p VBB khin cathode ca diode ca dng hn so vi B1 v c gi tr in
th n.VBB . Nu in p emitter VE nh hn gi tr ny, chuyn tip s c phn cc
ngc v ch c mt dng emitter ngc nh chy qua.
Nu VE ln hn (nVBB + VD) , vi VD l in p ngng ca chuyn tip, th diode
s c phn cc ngc v c mt dng emitter thun IE chy qua. Dng ny do cc l
trng khuch tn vo phn thp hn ca thanh bn dn v lm tng dn (do s
lng cc ht dn t do tng). iu ny khin cho in tr RB1 gim. Khi RB1 gim, in
p n.VBB cng gim, bi th c s gia tng in p thun qua diode v tt nhin dng
qua diode cng tng. Qu trnh tch lu ny tip tc cho n khi t n gi tr dng IE

tc t n trng thi bo ho ca thanh bn dn ti min RB1 . Bt u t cc iu kin
ny, in p VE , m c gi tr nh nht Vv (in p im trng), bt u tng khi dng
tng, ging nh c tuyn thng thng ca diode.
c trng ca c tuyn dng/p ca UJT nh
Vng tr khng m
ch ra hnh bn.
ng cong ny, c 3 min lm vic:
Vng bo ho
Vng 1: 0 < VE < VP : dng IE l rt nh v tr
2
1
khng vo rt cao.
3
Vng 2: VP < VE < Vv : tr khng vo l m, c
ngha mt s gia tng dng s khin cho in p
gim.
Vng 3: VE > Vv : tr khng vo li tr nn dng
v c gi tr tng t vi tr khng ca diode khi
dn.
Cc im c trng:
VP c gi l in p nh v bng:
VP = n.VB2B1 + VD = n.VBB + VD.
Vv : in p im trng.
Iv : dng in im trng.
Transistor UJT c dng ch yu trong cc mch chuyn mch, nh thi, mch
trigger v mch to xung.
c. Mt s mch ng dng ca UJT
Mch to xung rng ca.
Gi thit ti thi im bt u ca chu k, t C phng ht
in. Khi ny chuyn tip emitter b phn cc ngc do in p trn
R1 > 0. V vy, t s np qua R3 vi hng s thi gian R3.C . Khi
in p trn C t ti in p nh ca UJT, UJT bt u dn, cho
php t in phng qua RB1 v R1 v gim xung in p nh nht rt
gn in p im trng. Ti thi im ny, UJT li kho (ngt) v bt
u chu k k tip.
Cc tn hiu ti cc im khc nhau ca mch
c ch ra hnh bn.
Nh thy trong hnh, t in phng to nn xung
dng qua R1 v xung m qua R2, m chu k ca xung
ph thuc hng s thi gian (R1+RB1).C .
Thnh phn in p 1 chiu dc ca VR1 v VR2
c xc nh bi dng tnh, dng ny chy qua 2
in tr ny khi khng c tn hiu vo trn Emitter. Bin
ca xung VB1v VB2 c th khc nhau v chng c
xc nh bi cc in tr R1, R2, RB2
Tn s f ca tn hiu (nu hng s thi gian phng
l rt nh so vi hng s np) s c biu din bi ( ch
T = T1 + T2 T1):
108
Cu kin in t

1
R3 .C. ln(1 n)
T quan h ny c th thy tn s s khng ph thuc in p ngun cung cp.
B to xung vung.
Mch bn c th c s dng to ra xung vung.
Ti thi im bt u ca chu k, gi thit C phng ht v do
vy UJT ngt. Sau t C s np in qua R3 v D1 cho n khi
in p trn n t ti gi tr in p nh. Ti thi im ny, UJT
bt u dn v c ni vi ngun cung cp qua R3. T in C, lc
ny cch ly vi UJT do D1, s phng in qua R4.
Khi in p qua R4//C ri xung mc in p trng,
UJT s ngt v chu k li bt u. Tn hiu ti cc im khc
nhau c v hnh bn.
Chu k T ca tn hiu l hm ca hng s thi gian
phng v np ca t C. Bi th, n ph thuc vo C, R3, R4
nh sau:
E Vv
V
+ R 4 .C . ln P
T = R 3 . C . ln
Vv
E VP
f=
V
1
R 3 . C . ln
+ R 4 . C . ln P
1 n
Vv
2. PUT (Programmable UJT - UJT iu khin c)
a. Cu to v k hiu
PUT gm 3 chuyn tip v 3 cc: anode A; cathode K v cc
ca gate G. Cu trc bn trong v k hiu ca PUT c th hin
nh hnh bn.
b. Nguyn tc hot ng
iu kin dn ca PUT hay l dng dn
gia anode v cathode s ph thuc vo in
p trn cc ca G. Cc ca l cc iu khin
ca PUT. PUT hot ng ging nh mt UJT,
nhng khc im l : dng bt u ca PUT
c th c thit lp nh cc linh kin bn
ngoi.
Trong ch hot ng thng thng
ca PUT, s c mt in p c nh VGK gia
cc G v Cathode. Khi in p anode VAK thay
i s c 3 vng hot ng sau:
Vng kho: VAK nh hn in p VP in p nh (VP VGK 0.5 V) Trong min
ny, dng anode rt nh.
Vng tr
khng m
Vng kho
Vng bo
ho

Vng in tr m: nu VAK > VP ; IA s tng; in tr gia A v K gim v VAK
cng gim.
Vng bo ho: lc ny, VAK cao hn in p trng Vv ; tr khng gia A v K
c gi tr dng. PUT duy tr dn cho n khi dng anode IA gim thp hn dng im
trng Iv.
c. Cc ng dng ca PUT.
Cc ng dng in hnh ca PUT tng t nh UJT. Ta ch xt ng dng to mch
chia tn.
Xt mch trong hnh di y. on A l th hin mch bi p. in p trn C2 s
gp i in p vo. Khi ni mt PUT vo mch (on B) cho php C2 c th phng
in khi t n in p ngng ca PUT. Do s phng in s c mt xung in p trn
R v tn s ca xung in p ra ny t l vi tn s ca tn hiu vo.
3. Chnh lu c iu khin SCR (Silicon Controlled Rectifier)
a. Cu to v k hiu
SCR gm 3 chuyn tip v c 3 cc: Anode A; cathode K; cc
ca G.
SCR (chnh lu c iu khin) cn c gi l thyristor. SCR
l mt linh kin in t c hai trng thi hot ng n nh.
Trng thi ngt OFF, dng qua l rt nh v SCR c th xem
nh h mch.
Trng thi bt ON, dng rt ln (gii hn bi in tr ngoi),
v SCR thc cht l ngn mch.
b. Nguyn tc hot ng
Hot ng ca SCR c m t nh sau:
Mt xung dng in trn cc ca G s iu khin trng thi bt u dn gia
anode v cathode.
gi SCR trng thi dn, cn mt dng nh trn anode c gi l dng duy
tr.
Gim dng anode xung di gi tr ngng duy tr, hay o ngc phn cc
110
Cu kin in t

gia anode v cathode s a SCR vo trng thi ngt.
Hnh bn ch ra c tuyn dng/p cho 1 SCR khi
SCR
khng c tn hiu trn cc ca G.
dn
Ta c th thy rng, trong min phn cc ngc
SCR s hot ng ging nh mt Diode.
Trong min phn cc thun (anode dng hn so
vi cathode), ban u ch c mt dng in nh chy
qua SCR trong trng thi m thng. Khi in p phn
cc thun tng ln v t n gi tr ngng thng VB0
(break-over) th dng bt u tng nhanh, in p VAK
SCR ngt
qua SCR gim t ngt xung mt gi tr thp gi l
in p ngng thun VAK0 . Khi m SCR dn, n s
c mc tr khng rt nh v in p qua n rt nh
(khong vi Volt), t ph thuc vo dng in.
Tc dng ca cc ca G l iu khin in p
ngng nh thng VB0 .
Hnh bn ch ra in p ngng thng ph
thuc vo dng cc ca IG.
4. DIAC v TRIAC.
a. DIAC
DIAC l mt linh kin gm 2 phn PNPN kt ni song song-i
nhau, xem hnh bn.
C hai im khc bit ca DIAC so vi SCR l:
DIAC dn khng cn in p a vo cc ca m ch cn t in
p ngng gia cc T1 v T2.
DIAC c th dn theo c hai hng.
Nhng c trng ny c ch ra trn ng cong dng/p ca
hnh di y.
Trong on (1) ca c tuyn (-VB0 VB0), DIAC s hot ng
nh mt chuyn mch vi c hai chiu phn cc thun v nghch. Khi in p vt qua

gi tr ngng nh thng VB0 , dng bt u tng nhanh v in p gim xung gi tr
Vm.

Trong on (2) ca c tuyn (-VB0 -Vm hoc Vm VB0), in p st xung
trong khong thi gian ngn, trong khong thi gian ny, DIAC c in tr m. Nu
in p t vo DIAC gim xung nh hn Vm, DIAC s quay tr li trng thi h
mch (ngt).
Hnh trn l s mt b to dao ng n gin s dng DIAC.

Vi mch ny, t s np qua R1 trong khong t1. Khi in p trn t bng vi VB0
DIAC s bt u dn. Lc ny, t s phng qua R2 v DIAC ; in p trn t gim
xung gi tr Vm. Khi ny , DIAC chuyn v trng thi h mch (ngt). Chu k li tip
tc.
b. TRIAC
Cu to v k hiu
Hnh bn cho thy TRIAC v mt cu to tng

ng nh 2 SCR mc song song, mt kiu P v mt
kiu N.
Tuy nhin, TRIAC khc bit so vi SCR kh
nng dn theo hai hng.
Nguyn tc hot ng
c tuyn dng/p c th hin hnh bn
Khi khng c tn hiu vo cc ca G, TRIAC s
lun ngt, v lun c mt diode phn cc ngc: nu VMT2 > VMT1 , chuyn tip N2P1 s
m bo trng thi ngt; cn nu VMT1> VMT2 chuyn tip N2 P2 s m bo cho trng
thi ngt.
112
Cu kin in t

TRIAC s dn khi in p gia MT1 v
MT2 vt qu gi tr ngng VB0. Cng ging
nh SCR, gi tr ngng VB0 c th c iu
khin bi dng trn cc ca G. S dn c th
theo hai hng: khi MT1 dng hn MT2 th
P2N2P1N1 s to ng dn, cn khi MT2
dng hn so vi MT1 th dng s chy qua
P1N2P2N4
TRIAC s dn khi c cc in p phn cc v dng iu khin c chiu nh hnh
di y.
Chng IV: Linh kin quang in t
Chng IV
Linh kin quang in t

I. khi nim chung v k thut quang in t
1. nh ngha
Quang in t l nhng hiu ng tng h gia bc x nh sng v mch in t.
Bc x nh sng l 1 dng ca bc x in t c di bc sng t 0,001 nm n
1cm. S thay i trng thi nng lng trong nguyn t v phn t l ngun gc ca cc
bc x nh sng .
Cc bc x quang c chia thnh 3 vng l:
Vng cc tm
Vng nh sng nhn thy
Vng hng ngoi
di bc sng t 100 nm n 380 nm

di bc sng t 380 n 780 nm
di bc sng t 780 nm n1 mm
2. Phn loi linh kin quang in t

Gm 2 loi linh kin l linh kin bn dn v linh kin khng bn dn.
* Linh kin bn dn quang in t l nhng linh kin th rn c ch to t vt
liu bn dn nh in tr quang, diode quang, transistor quang, LED, PiN, Laser, APD
* Linh kin khng bn dn quang in t l si quang, mt ch th tinh th lng

LCD, ng nhn quang
II. cc linh kin pht quang
1. Nguyn l bc x
Hai tin ca Bohr:
* Tin v trng thi dng: nguyn t ch tn ti nhng trng thi c mc nng
lng xc nh, gi l cc trng thi dng. Trong cc trng thi dng nguyn t khng
bc x.
* Tin v s bc x v hp th nng lng ca nguyn t: trng thi dng c
mc nng lng cng thp th cng bn vng. Khi nguyn t cc trng thi dng c
nng lng ln bao gi cng c xu hng chuyn sang trng thi dng c mc nng
114
Cu kin in t

lng nh hn.
H qu rt ra t hai tin trn l: trong trng thi dng ca nguyn t, in t ch
chuyn ng quang ht nhn theo nhng qu o c bn knh hon ton xc nh gi l
cc qu o dng.
iu ny cho thy khi cung cp cho nguyn t mt nng lng no th in t
s hp th nng lng ny v nhy ln mc nng lng cao hn. Tuy nhin, nu qu o
cng xa ht nhn th thi gian tn ti qu o ny cng ngn v c xu hng tr v
qu o gn ht nhn theo cch nhy thng hoc nhy tng bc.
a. S bc x nh sng khng kt hp (bc x t pht)
Nh ni trn nu cc in t tr v mc nng lng c bn t cc mc nng
lng cao theo cch nhy thng hoc nhy tng bc qua cc trng thi dng trung gian
th nh sng do chng bc x ra s l nh sng tng hp. Ngha l cc xung nh sng
ny khng cng pha v tn s, ta ni nguyn t bc x ra nh sng khng kt hp
(y chnh l nguyn tc hot ng ca LED).
b. S bc x nh sng kt hp (bc x kch thch)
Khi cc nguyn t tn ti trong cng mt mng tinh th th chng nh hng ln
nhau, do khi nim mc nng lng c th thay bng khi nim di nng lng. S
dch chuyn t trng thi nng lng ny sang trng thi nng lng khc c th b cm
nhiu, cm t hay cm hn.
Xt trng hp ca Laser hng ngc
Cc in t c 3 mc nng lng E1, E2, E3. Trong E1 l mc nng lng c
bn. E2 l mc nng lng n nh (thi gian tn ti in t mc ny l 10-2s). E3 l
mc nng lng cao (thi gian in t tn ti y ch l 10-8s) nn khi b kch thch ln
mc ny th in t nhanh chng nhy xung E2.
Nh vy khi c nng lng cung cp thch hp a vo mng tinh th th in t
E3
E2
E1
Trng thi bnh thng
Trng thi kch thch
o mt tch lu
s tp trung mc E2 (E1 E2; E1 E3 E2). Ngha l trong nguyn t xy ra hin

tng o mt tch lu (in t bnh thng tp trung E1 nay chuyn sang tp trung
E2)
Nu ngu nhin xy ra mt qu trnh bc x ca mt in t b kch thch no
th s c hiu ng dy chuyn xy ra. S d vy l do khi chuyn t E2 v E1 in t ny
s bc x ra mt dao ng ngn, dao ng ny lan truyn v tc ng ti cc in t
khc v lm chng cng bc x. Tn s ca bc x c xc nh bi mc chnh lch
nng lng gia E2 v E1. Do c th coi rng cc in t nm cng mc nng lng
Cu kin in t
115

E2 c iu hng cng mt tn s v pha trng vi tn s v pha ca nh sng kch
thch. Tc l nh sng pht ra l nh sng kt hp. Ngi ta gi y l hin tng
khuch i nh sng nh bc x cng bc. Nguyn l ny cn gi l nguyn l Fabry
Perot, v LASER chnh l linh kin c nguyn tc hot ng da vo nguyn l ny.
Trn thc t nng lng dng kch thch cho cc qu trnh phn tch trn l
nng lng in trng v ngi ta gi l nguyn l bin i in / quang. Ngha l
t nng lng in chuyn thnh nng lng quang nh cc hin tng bc x.
2. Diode pht quang - LED (Light Emitting Diode)
LED l linh kin bn dn quang c kh nng pht ra nh sng khi c hin tng
ti hp xy ra trong chuyn tip P N.
nh sng do LED pht ra l nh sng khng kt hp, t pht v ng hng.
Tu theo vt liu ch to m nh sng bc x ca LED c th nhng vng bc
sng khc nhau.
LED bc x ra nh sng nhn thy ( gi l LED mu) c s dng trong cc h
thng chiu sng hoc quang bo.
LED bc x hng ngoi (LED hng ngoi) c s dng trong h thng bo v,
sn xut, thng tin quang.
a. Cu to v k hiu LED
Vt liu ch to LED l cc nguyn t nhm III v V: GaAs, GaP, GaAsP y

l nhng vt liu ti hp trc tip.
Nng ht dn ca P v N rt cao nn in tr
~ 980 nm
ca chng rt nh. Do khi mc LED phi mc ni tip
A
vi mt in tr hn dng.
Cu to ca LED hng ngoi tng t nh ca LED
mu. Ch c mt im khc bit l mt mt ca bn dn GaAs (P)
c mi nhn lm gng phn chiu a nh sng ra
khi LED theo mt chiu vi tp trung cao.
b. Nguyn tc lm vic ca LED
GaAs (N)
Da trn hiu ng pht sng khi c hin tng ti

Mi nhn
B
hp in t v l trng vng chuyn tip P N. LED s
pht quang khi c phn cc thun, ngha l bin i
nng lng in thnh nng lng quang. Cng pht
quang t l vi dng qua LED.
Khi phn cc thun cc ht dn a s s t di chuyn v pha bn dn bn kia.
in t t bn N s khuch tn sang P v l trng bn P s khuch tn sang N. Trong
qu trnh di chuyn chng s ti hp vi nhau v pht ra cc photon.
116
Cu kin in t

c tuyn Von-Ampe ca LED
c tuyn V- A ca LED ging nh ca diode thng thng.
Ith
Ung max
UD
UAK
in p phn cc thun UD: 1,6 3 V; in p phn cc ngc: 3 5 V; dng ID

khong vi chc mA
Ch :
Do c im cu to c bit nn LED hng ngoi to ra nh sng nm trong vng
hng ngoi. Ngoi ra, nhng tia c hng i vo trong lp bn dn s gp gng phn
chiu v b phn x tr li i ra ngoi theo cng mt hng. Vic ny s tng hiu
sut mt cch ng k cho LED.
Tia hng ngoi c kh nng xuyn qua cht bn dn tt hn so vi nh sng nhn
thy nn hiu sut pht ca LED hng ngoi cao hn rt nhiu so vi LED pht nh
sng mu.
tng cng tnh nh hng cho LED, ngi ta thng cu to LED vi mt l
cho nh sng i qua. C hai loi LED l SLED (LED pht x mt) v ELED (LED pht
x cnh). Di y l hnh minh ho cho vic ly nh sng ra ca mt SLED.
c. Tham s ca LED
* Vt liu:
V nguyn tc tt c cc chuyn tip P N u c kh nng pht ra nh sng khi
c phn cc thun nhng ch c mt s loi vt liu ti hp trc tip mi cho hiu sut
ti hp cao.
Mt s loi LED thng dng:
Cu kin in t
117

Bc sng
Vng
Vt liu
Eg (eV)
bc x
(nm)
GaAs
1,43
910
Hng ngoi
GaAsP
1,9
660
GaAlAs
1,91
650
GaAsP
2
635
Cam
GaAsP
2,1
585
Vng
GaAsP
2,2
565
Xanh l cy
GaP
2,24
560
Xanh l cy
SiC
2,5
490
Xanh da tri
GaNO2
3,1
400
Tm
* Nhit
Khong nhit lm vic ca LED : - 600C n + 800C
LED rt nhy vi nhit :
Nhit cng tng bc sng ca LED cng ngn (bc
m/0C).
Nhit tng cng bc x quang gim (1% / 0C)
* Cng sut pht x: vi trm W n vi mW
UD
(I=20mA)
1,6 1,8
1,6 1,8
1,6 1,8
2 - 2,2
2,2 2,4
2,4 2,7
2,7 3
3
3
Ung
5
5
5
5
5
5
5
5
5
sng gim 0,02 0,09
d. Phn loi v ng dng ca LED

LED bc x nh sng nhn thy c s dng trong bo hiu, mn hnh, qung co
cn LED bc x nh sng trong vng hng ngoi dng trong cc h thng thng tin
quang hoc cc h thng t ng iu khin hoc bo mt.
vic s dng c n gin v gn nh ngi ta thng ghp nhiu LED vi
nhau, nu ghp cc cc anot vi nhau th cc u iu khin i vo cc catot (iu khin
bng xung m) v LED gi l anot chung. Nu ghp cc cc catot vi nhau th cc iu
khin i vo anot (iu khin bng xung dng) v LED gi l catot chung. Ngi ta
thng to LED theo cc cu trc sau:
LED n
LED i
LED 7 thanh .
Hnh di y biu din cc k t hin th ca LED 7 thanh
118
LED bng
Ma trn LED
.
Cu kin in t

3. LASER
Nh ni phn trn, LED khng th p ng c nhng yu cu ca h thng
yu cu tc cao, cng sut pht ln, tnh nh hng tt Trong trng hp ny
ngi ta phi s dng ngun LASER vi nhng tnh nng vut tri so vi LED. Xt v
bn cht c LED v LASER u c nguyn tc hot ng da trn nguyn l bin i
in / quang v c cu trc n gin nht nh mt diode.
LASER l mt linh kin quang hc dng to ra v khuch i nh sng n sc
c tnh lin kt v pha t bc x kch thch ca nh sng.
Mi trng bc x c th l cht kh, cht lng, tinh th cch in hay cht bn
dn.
Bc x ca cc loi LASER u c tnh cht ging nhau l c tnh kt hp v
khng gian v thi gian, ngha l nh sng bc x ra ngoi l nh sng n sc c tnh
nh hng cao.
Nguyn tc hot ng
LASER hot ng da trn 3 hiu ng:
Hiu ng chch ng t: khi cho hai khi bn dn suy bin khc loi tip xc
nhau th ti lp tip xc iu kin o mt tch lu c hnh thnh. Cc phn t
mang in khuch tn sang nhau nhng ch trong mt thi gian ngn sau khi hnh thnh
th cn bng qu trnh ny s mt i. to ra vic o mt tch lu th phi t mt
in trng ngc vi in trng tip xc, ngha l phn cc thun cho diode. Khi ny
ta ni cc ng t c chch vo min hot tnh v chng s tham gia vo qu trnh ti
hp to thnh bc x LASER.
o mt tch lu bng cch chiu nh sng l hoc cung cp mt in trng
ngoi. Khi ny s trng thi kch thch b chim gi nhiu hn s trng thi c bn b
chim gi. Hin tng o mt tch lu xy ra khi c hin tng phun ht dn v
dng bm vt qu dng ngng.
Pht x kch thch: khi in t chuyn t mc nng lng cao xung mc nng
lng thp th s bc x ra photon. Qu trnh LASER l qu trnh bc x kch thch, n
xut hin khi h s khuch tn quang trong b cng hng ln hn tn hao bc x. Khi
cc photon c bc x ra s c tn s v pha ng bng tn s v pha ca photon
n.
III. Cc linh kin thu quang
B thu quang l phn t c nhim v bin i tn hiu quang thnh tn hiu in
da trn nguyn l bin i quang / in. Ngha l, bin i nng lng quang thnh
nng lng in. Khi cc nguyn t c cung cp nng lng di dng nng lng
quang thch hp, cc in t lp ngoi cng ca chng c th bt ra thnh in t t do,
ngi ta gi l hin tng pht x cp in t - l trng. Bng cch dng in trng
ngoi thu nhn cc in t v l trng ny ta s c dng in mch ngoi gi l
dng quang in c ln ph thuc vo cng ca nh sng chiu vo.
Tu theo mc ch s dng v cu trc m c nhiu loi b thu quang khc nhau,
v th c tnh ca chng cng khc nhau.
C th ly mt s v d in hnh nh sau:
Cu kin in t
119

Loi
H s p ng
[A/W]
Phototransistor (Si)
18
Photodarlington (Si)
500
PiN photodiode (Si)
0,5
PiN photodiode (InGaAs)
0,8
APD (Ge)
0,6
APD (InGaAs)
0,75
PiN FET (Si)
15000V/W
PiN FET (InGaAs)
5000V/W
Thi gian tng

sn xung [s]
2,5
40
0,1 5
0,01 5
0,3 1
0,3
10
1 - 10
Dng ti
[nA]
25
100
10
0,1 3
400
30
1. Cc thng s c bn ca b thu quang

Hiu sut lng t ho: l t s gia s lng cc i in t l trng sinh ra trn s
photon c nng lng hf i n
I /q
= P
(30 95 %)
P0 / hf
nhy S
y l thng s lin quan ti kh nng p ng ca b thu i vi tn hiu. N ph
thuc vo bn thn b tch sng, cc mch khuch i v cc mch x l tn hiu in.
nhy S l t s gia dng quang in sinh ra trn cng sut nh sng i n
diode
I
q
S = P = .
P0
hf
Cc tham s ca b tch sng nh hng ti nhy l:
+ H s p ng l t s gia nng lng in u ra v nng lng quang u vo
P
R = .
hf
+ Hiu sut lng t ho
+ khuch i ca mch. C th s dng cc b khuch i in cng nh
khuch i quang lm tng cng sut tn hiu nhng chng s khuch i c nhiu v
tn hiu.
+ Vt liu ch to b tch sng quang. y l thng s s quyt nh bc sng
cng tc, ngha l di bc sng m b tch sng s lm vic tt nht.
Mt s gi tr nhy ca PiN
Vt liu
Si
Ge
InGaAs
120
Bc sng
900
1300
1300
nhy [A/W]
0,65
0,45
0,6
Cu kin in t

Bc sng hot ng v vt liu ch to
Vt liu bn dn nn v thnh phn pha tp s quyt nh di bc sng hot ng
ca b thu quang. V d, GaAlAs lm vic di 800 900 nm; Ge, InGaAs, In GaAsP
lm vic di 1300 1500 nm. Bng cch thay i ch s ca In, Ga, As, P s c cc
bc sng khc nhau trong di trn. Thm vo , ng vi mi loi vt liu ny s c
hiu sut lng t khc nhau.
2. Mt s linh kin thu quang
a. in tr quang
in tr quang l mt linh kin quang th ng, khng c tip xc P N. N hot
ng da trn tnh cht ca bn dn l in tr ca bn dn ph thuc vo nng ht
dn in. Khi vt liu hp th nh sng, nng ht dn in ca n tng ln, do vy
in tr ca n gim xung. Hm ca in tr ph thuc vo cng nh sng chiu
vo.
Cu to v k hiu
in tr quang thng c ch to bng vt liu CdS, CdSe, ZnS hoc cc hn
hp tinh th khc, ni chung l cc vt liu nhy quang.
in tr quang gm :
Chn cc
Lp chng phn quang

in cc
Vt liu
nhy quang
Bn dn nhy quang
Cht cch in
+ Mt lp vt liu bn dn nhy quang (c b dy t 1 m n 0,1 mm, tu theo

vt liu s dng v cng ngh ch to)
+ l cht cch in
+ Tt c c ph mt lp chng m trong sut i vi vng nh sng hot ng
ca quang tr.
+ V bc bng cht do c ca s cho nh sng i qua
Nguyn tc lm vic:
Khi chiu nh sng vo lp vt liu nhy quang th cc cp in t l trng s
xut hin lm cho nng ht dn in tng ln, ni cch khc l in tr ca khi bn
dn gim xung.
dn in ca vt liu bn dn nhy quang c tnh theo cng thc:
= q(n n + p p )
Cu kin in t
121

vi
n , p l linh ng ca in t v l trng
n,p l nng ht dn ca in t v l trng
Nh vy, in tr ca quang tr ph thuc vo cng nh sng chiu vo, ngha
l cng dng qua in tr thay i. Ni cch khc, s bin i cng nh sng
chuyn thnh s bin i ca cng dng in trong mch, hay tn hiu quang
c chuyn thnh tn hiu in.
Cc tham s chnh ca quang tr
+ in dn sut P l hm s ca mt quang khi di bc sng thay i.
+ nhy tng i ca quang tr S() l t s gia in dn sut thay i theo
bc sng v in dn sut cc i khi mt nng lng quang khng thay i.
p ( )
S ( ) =
p ( ) = const
p max( )
+ Thi gian p ng l thi gian hi p ca quang tr khi c s thay i cng
sng
Thng thng khi cng nh sng mnh quang tr lm vic nhanh hn.
+ H s nhit ca quang tr
H s ny t l nghch vi cng chiu sng. Do vy quang tr cn lm vic
mc chiu sng tt nht gim thiu s thay i tr s theo nhit .
+ in tr ti Rd
Rd l in tr trong iu kin khng c chiu sng ca quang tr, n s cho bit
dng ti (hay dng r) ln nht.
+ Cng sut tiu tn ln nht
Khi hot ng cn gi cho nhit ca quang tr nh hn nhit cho php. Kch
thc ca quang tr cng ln th kh nng tiu tn nhit cng tt.
Vt liu ch to s gii hn di nhit ca quang tr t 40 750C
b. T bo quang in
Cu to
Vt liu dng ch to t bo
quang in c th l Ge, Si, CdS, ZnS
Phn nhy quang l tm bn dn Rt
Si - N
loi N vi cc ca s trong sut cho nh
UF
Etx
sng i vo (thng c ph thm cht
+
Si P
chng phn x quang).
Pha i din vi bn dn N l lp
bn dn loi P+
Tt c c bc trong lp v bo v c 2 in cc ni ra ngoi.
Nguyn tc lm vic
Khi chiu sng ln lp bn dn N, do qu trnh lng t ho cc cp in t l
trng s c sinh ra. Di tc dng ca in trng tip xc chng s di chuyn v 2
in cc. L trng di chuyn v pha N cn in t di chuyn v pha P. Vic di chuyn
ny ca cc ht dn hnh thnh mt hiu in th gia 2 u in cc c chiu t P
122
Cu kin in t

sang N. Khi trng thi cn bng c thit lp th gi tr hiu in th ny n nh v
nu mc in tr ti th s c dng qua in tr ny. Nh vy nng lng quang c
chuyn thnh nng lng in.
c. Diode quang (Photodiode)
Diode quang tng t nh mt diode bn dn thng thng. N c ch to sao
cho, khi c nh sng ngu nhin ri trn cht bn dn, nh sng ny c th tip cn ti
vng chuyn tip. Nng lng nh sng ngu nhin s ph hu lin kt ca cp in tl trng, do vy cc in t t do s b ht v min N v cc l trng b ht v min P.
Dng quang in do c to ra trong diode ph thuc vo cng nh sng.
Hng ca dng quang in ny t cathode n anode; v th, trong cc ng dng thng
thng, diode c phn cc ngc.
Khi diode khng c chiu sng (0 lux), vn c mt dng ti Id qua chuyn tip
P-N, bng vi dng r ca diode thng thng c phn
cc ngc. Khi photodiode c chiu sng, dng tng It
ca n bng tng ca dng ti Id v dng quang I p tc l:
It = Id + Ip .
Hnh bn ch ra c tuyn dng/p ca diode quang
ti cc gi tr khc nhau ca nng lng quang ngu nhin
chiu vo.
Trong cc h thng yu cu cao v nhy thu ngi
ta s dng hai loi diode quang l diode quang qua min t
dn (PiN) v diode quang thc (APD). Hai loi ny c
ng dng c bit trong cc h thng thng tin quang nn khng trnh by chi tit y.
d. Transistor quang lng cc (Phototransistor)
Transistor quang c nhim v bin i tn hiu quang thnh tn hiu in, ngoi ra
chng cn c kh nng khuch i cc tn hiu ny ln.
Cu to v k hiu ca transistor quang
Cng ging nh transistor lng cc thng thng, transistor quang c ch to
t cht bn dn Si, Ge. N c 2 chuyn tip P N, c 2 hoc 3 chn cc.
B
C
SiO2
N+
P
C
B
C
E
Transistor quang c 2 loi l PNP v NPN. Trn hnh v l cu to ca transistor

loi NPN, cn loi PNP cng c cu to tng t nh vy.
Cu kin in t
123

Cc gc B c b mt c nh sng chiu vo, n c ch to rt mng c
in tr nh v thng trng (ph lp phn quang).
Nguyn tc hot ng:
IC (mA)
8
hf3
6
N
hf
Rt
hf1
P
N
E
hf2
4
2
Ecc
hf0=0
UCB (V)
0
10
15
Ngun cung cp Ecc to cho chuyn tip pht phn cc thun v chuyn tip gp
phn cc ngc.
Ti Rt st bt mt phn in p phn cc cho C v ly tn hiu in ra.
Khi khng c nh sng chiu vo (khng c tn hiu quang hay hf = 0, IB = 0)
trong mch ch c dng ti ICti . y l dng in do in t khuch tn t phn pht
sang phn gp v c tr s nh.
Khi c tn hiu quang n, trong phn gc s xut hin cc cp in t l trng.
Cc in t s di chuyn v cc gp, l trng di chuyn v pha cc pht to thnh dng
quang in Ip. Cc l trng tp trung tip gip pht lm cho tip gip pht phn cc
thun cng mnh, mt khc in t tp trung tip gip gp lm cho n phn cc ngc
cng mnh. Kt qu l in t d dng i t E, qua B v sang C lm ch dng in cc
gp IC tng r rt.
Nhn xt:
Dng cc gc h v c nh sng chiu vo nn dng in cc gc chnh l
dng tn hiu quang.
H s khuch i dng quang in chnh l h s khuch i ca transistor trong
s mc cc pht chung.
Transistor cng c 3 cch mc l BC, EC v CC vi dng
C
iu khin l dng tn hiu quang.
V mt cu trc c th coi transistor quang nh l mt mch
gm mt diode quang lm nhim v bin i tn hiu quang thnh B
tn hiu in v mt transistor c nhim v khuch i.
Khi ny nhy tng ln vi trm ln so vi diode quang
E
n nhng di tn lm vic li b hn ch i rt nhiu. Transistor
quang c di tn lm vic rng 300 kHz cn diode quang c di
124
Cu kin in t

tn lm vic c vi chc MHz.
Hnh bn ch ra ng cong biu din mi
quan h gia dng emitter v in p collectoremitter ca transistor quang NPN vi cc gi tr
khc nhau ca cng sng. Nu cc B c ni
vo mch, s c dng base Ib v dng collector
c tng thm mt lng l .Ib.
IV. Mt ch th tinh th lng LCD

1. Khi nim
LCD l linh kin quang th ng c ch to di dng thanh v chm ma trn.
Hin nay LCD c s dng lm bng hin th v mn hnh
u im:
Cng sut tiu th thp, kch thc nh gn
LCD khng pht sng nn d c nu mi trng xung quanh sng
Cu trc phng dt c bn c hc cao
C th iu khin trc tip bng linh kin bn dn TTL v CMOS
Nhc im:
Tui th ngn hn LED
Ch c th c c vi ngun sng bn ngoi
Thi gian tt m tng i chm
Khong nhit lm vic kh hp
2. Cu to ca thanh LCD
LCD gm 2 tm knh t cch nhau 10 m, mt trong trng mt lp ZnO trong
sut lm in cc.
Gng phn chiu
Tm nha phn cc 2
Knh
Keo
Tinh th lng
Tm nha phn cc 1
in cc trong sut
nh sng chiu
Mt quan st
Xung quanh 2 bn tm knh hn kn sau khi y tinh th lng vo.

Hai tm nha c tnh phn cc nh sng c dn bn ngoi tm knh sao cho
Cu kin in t
125

hnh nh c nhn t mt pha nh mt gng phn x li.
Vt liu lm tinh th lng l nhng hp cht hu c. Tu theo nhit lm vic
m nhng tinh th lng ny trng thi khc nhau
Th rn
Lng khng
ng hng
t0 nng chy
Lng
ng hng
t0 trong sut
Nhit thp: tinh th lng th rn

Nhit nng chy: tinh th lng th lng khng ng hng
Nhit trong sut: tinh th lng th lng ng hng
Hiu ng quang hc dng cho mt ch th LCD ch hn ch khong nhit m
tinh th lng dng khng ng hng.
3. Nguyn tc lm vic
a. Ch phn chiu
Khi cha c in p t vo, cc thanh LCD khng lm vic, nh sng xuyn qua
mt ch th v b phn chiu gng ri quay tr v mt ngi quan st. Lc ny mt
ch th trong sut.
Khi c in p cung cp, trcdi ca cc phn t cht tinh th lng c nh
hng theo hng ca in trng. Nh vy, nh sng i qua tm nha phn cc th
nht s b thay i do cht tinh th hot ho, nh sng khng th i qua tm th 2.
Thanh tinh th lng chu tc ng ca in trng s b ti i do nh sng khng quay
tr li mt ngi quan st.
ch phn chiu ny nn ch th trong sut cn nhng k t hin th th b ti
en. Khi ny nu khng c ngun nh sng ngoi th mt ch th s khng nhn thy.
Mn hnh hin th ca my tnh c nhn, my in thoi di ng hin nay ch yu
l LCD hot ng ch phn chiu.
b. Ch thng sng
Ch ny ngc vi ch trn, khi 2 mng lc phn cc song song v ta c
mt ch th c nn ti cn cc k t hin th trong sut. Loi ny thch hp cho chiu
sng t pha sau.
Loi LCD ny cn c in p xoay chiu t 3 8 VAC.
Thi gian hin s l 100 ms v thi gian tt l 200 300 ms.
Hu ht cc loi ng h hin th s u kt hp c hai ch phn chiu v thng
sng.
Ch :
LCD lm vic ta cn mt in p xoay chiu khng c ln in p mt chiu.
Nu in p mt chiu ln mng in cc trong sut ZnO s b kh thnh Zn c mu ti.
Khi mn LCD khng hin th c na, ngi ta gi hin tng ny l hin tng m
ca LCD.
LCD thng thng yu cu in p mt chiu nh hn 100 mV cn LCD mu yu
cu in p mt chiu nh hn 50 mV.
126
Cu kin in t

3. Mt s loi LCD tiu biu
LCD loi thng sng
LCD loi phn chiu
LCD loi thng sng + phn chiu
LCD mu
LCD ghp knh
3 loi LCD u tin l LCD hot ng ch phn chiu, thng sng v phn
chiu + thng sng
LCD mu:
ch to LCD mu cc ht mu c trn ln vi tinh th lng.
Khi khng c in p cc tinh th lng nm song song vi cc phn t mu.
Khi in p xoay chiu t vo ln cc phn t mu v tinh th lng s c
sp xp li to thnh mu sc khc nhau.
LCD loi ghp knh:
LCD c cu trc theo kiu ma trn m x n nhm gim thiu s dy iu khin trong
cc LCD c im ch th.
4. Tham s ca LCD
Khong nhit lm vic
Gi tr
nh nht
- 10
Khong nhit d tr
- 25
in p lm vic
VAC
Thnh phn mt chiu
mV
Tn s iu khin
Hz
Tham s
Dng tiu th nng lng
n v
Gi tr tiu
chun
+ 70
4,5
8
100
30
2
200
nA/mm
15
Thi gian ln hnh
ms
40
Thi gian tt hnh
ms
80
Thi gian ln + tt
ms
Cu kin in t
Gi tr ln
nht
+ 60
30
250
127
Ti liu tham kho

1.
2.
3.
4.
5.
K thut in t - Xun Th
K thut mch in t Phm Minh H
Linh kin bn dn v vi mch H Vn Sung
Electronic Devices and Circuits Mac Grar Hill
S Linh Kin-Tp ch in t
Bng mt s hng s vt l
Stt
Hng s
K hiu
Gi tr
n v
299792458
m s-1
Tc ca nh sng trong chn khng
t thm ca chn khng
Hng s in mi ca chn khng
8.854187817E-12
F m-1
Hng s Planck
6.6260755E-34
4E - 40
Js
Hng s Planck theo n v eV
4.1356692E-15
1.2E-21
eV s
Hng s Boltzmann
1.380658E-23
1.2E-28
J K-1
Hng s Boltzmann tnh theo n v eV
8.617385e-05
7.3e-10
eV K-1
Hng s Boltzmann tnh theo n v Hz
20836740000
180000
K-1 s-1
Khi lng ca electron
me
9.1093897E-31
5.4E-37
kg
10
Electron volt
eV
1.60217733E-19
4.9E-26
11
in tch ca electron
1.60217733E-19
4.9E-26
12
Bn knh Bohr
a0
5.29177249E-11
2.4E-18
13
Khi lng Proton
mp
1.6726231E-27
1.0E-33
kg
4 .10
N A-2
Mc lc
Mc lc
CHNG I
............................................................................................................................................4
C s vt l ca vt liu linh kin

I. Khi nim v l thuyt vng nng lng..........................................................4
1. Bn cht ca nguyn t............................................................................................. 4

2. Cc mc nng lng ca nguyn t ......................................................................... 6
3. Cc phng php cung cp nng lng cho nguyn t.......................................... 7
a. S va chm ca in t vi nguyn t: .................................................... 7

b. S va chm ca quang t vi nguyn t ................................................... 8
4. L thuyt di nng lng trong cht rn ................................................................ 8
5. S phn b nng lng ca in t hm Fecmi................................................... 9
II. Cht cch in (dielectric) ....................................................................................10
1. nh ngha................................................................................................................ 10
2. Cc tham s c bn ca cht in mi................................................................... 10
a. thm thu tng i (hng s in mi)........................................ 10

b. tn hao in mi Pa............................................................................. 11
c. bn v in (Et)................................................................................... 12
d. Nhit chu ng ................................................................................... 12
e. Dng in trong cht in mi................................................................. 12
f. dn in ca cht in mi ................................................................. 12
3. Phn loi v ng dng ca cht in mi.............................................................. 13
a. Cht in mi th ng............................................................................ 13
b. Cht in mi tch cc.............................................................................. 13
III. Cht dn in (conductor) .....................................................................................14
1. nh ngha................................................................................................................ 14
2. Cc tham s c bn ca vt liu dn in ............................................................. 14
a. in tr sut: ............................................................................................ 14
b. H s nhit ca in tr sut ................................................................ 14
c. H s dn nhit ...................................................................................... 15
d. Cng thot ca in t trong kim loi..................................................... 15
e. in th tip xc ....................................................................................... 16
3. Phn loi v ng dng............................................................................................. 16
a. Vt liu dn in c in tr sut thp.................................................... 16

b. Cht dn in c in tr sut cao .......................................................... 16
IV. Vt liu t .........................................................................................................................17
1. nh ngha................................................................................................................ 17
2. Tnh cht .................................................................................................................. 17
a. T tr v t thm ...................................................................................... 17
b. t thm tng i r ........................................................................... 17
c. t d..................................................................................................... 18
d. ng cong t ho B = f (H) ................................................................... 18
Cu kin in t
129
Mc lc
3. Phn loi v ng dng ca vt liu t.................................................................... 20
a. Vt liu t mm......................................................................................... 20
b. Vt liu t cng ........................................................................................ 20
V. Cht bn dn (Semiconductor) ..............................................................................21
1. nh ngha v tnh cht........................................................................................... 21

2. Bn dn thun (bn dn nguyn tnh Intrinsic) ................................................ 23
a. nh ngha v tnh cht ........................................................................... 23

b. Mt s cht bn dn thng dng ............................................................. 23
3. Bn dn pha tp (bn dn ngoi tnh Extrinsic) ............................................... 24
a. Bn dn loi N (bn dn loi cho, pha tp cht donor) ......................... 24

b. Bn dn loi P (bn dn loi nhn, pha tp cht acceptor)................... 25
4. Mc Fecmi trong cht bn dn (Fecmi energy level)........................................... 26
5. Dng in trong cht bn dn................................................................................ 26
a. Dng in khuch tn (diffusion current) .............................................. 26

b. Dng in tri (drift current) ................................................................... 27
CHNG II
..........................................................................................................................................28
cc linh kin th ng
I. in tr (Resistor)...........................................................................................................28
1 - nh ngha v k hiu ........................................................................................... 28
a - nh ngha............................................................................................... 28
b - K hiu ca in tr trong m ch in ................................................... 28
c - Cu trc ca in tr............................................................................... 29
2 - Cc tham s k thut c trng cho in tr. .................................................... 29
a - Tr s in tr v dung sai ...................................................................... 29

b - Cng sut tiu tn cho php (Ptt max) ....................................................... 30
c - H s nhit ca in tr: TCR (temperature co-efficient of resistor) ... 31
d - Tp m ca in tr ................................................................................ 31
3 - Cch ghi v c tham s trn thn in tr........................................................ 31
a - Cch ghi trc tip .................................................................................... 31

b - Ghi theo qui c ..................................................................................... 31
4. Cc kiu mc in tr ............................................................................................. 33
a. Mc ni tip .............................................................................................. 33
b. Mc song song .......................................................................................... 34
5 - Phn loi v ng dng ca in tr ...................................................................... 34
a - Phn loi.................................................................................................. 34
b - ng dng ca in tr ........................................................................... 36
c - Mt s in tr c bit ........................................................................... 36
II. T in (capacitor) ........................................................................................................38
1. K hiu v cu to ca t in ............................................................................... 38
a. K hiu v hnh dng ca t in ............................................................ 38

b. Cu to ...................................................................................................... 39
130
Cu kin in t
Mc lc
2. c tnh np v x in ca t ............................................................................... 39
3. c tnh ca t in i vi dng in xoay chiu ............................................... 40
4. Cc tham s c bn ca t in.............................................................................. 41
a. Tr s in dung v dung sai.................................................................... 41

b. Tr khng ca t in .............................................................................. 42
c. in p lm vic........................................................................................ 42
d. H s nhit ................................................................................................ 42
e. Dng in r ............................................................................................. 43
5. Cch ghi v c tham s trn t in ................................................................... 43
a. Cch ghi trc tip ..................................................................................... 43

b. Cch ghi theo quy c.............................................................................. 43
6. Cc kiu ghp t ...................................................................................................... 46
a. T in ghp ni tip................................................................................ 46
b. T in mc song song............................................................................. 46
7. Phn loi t in...................................................................................................... 46
a. T oxit ho (gi tt l t ho) .................................................................. 46

b. T gm (ceramic) ..................................................................................... 47
c. T giy....................................................................................................... 47
d. T mica ..................................................................................................... 47
e. T mng mng.......................................................................................... 48
f. T tantan ................................................................................................... 48
g. T xoay...................................................................................................... 49
h. T vi chnh (trimcap) ............................................................................... 49
i. T ng trc chnh.................................................................................... 49
8. Cc ng dng ca t in ....................................................................................... 50
a. T dn in tn s cao .......................................................................... 50
b. T np x in trong mch lc ngun .................................................... 51
III. Cun cm.............................................................................................................................52
1. Cu to v k hiu ca cun dy ........................................................................... 52

2. Cc tham s ca cun dy ...................................................................................... 53
a. H s t cm ............................................................................................. 53
b. Tr khng ca cun dy........................................................................... 54
c. H s phm cht Q ca cun dy ........................................................... 54
d. Tn s lm vic gii hn ca cun dy ................................................... 54
3. Cc cch ghp cun dy.......................................................................................... 55
a. Ghp ni tip............................................................................................. 55
b. Ghp song song......................................................................................... 55
4. Phn loi v ng dng ca cun dy ..................................................................... 55
a. Theo li ca cun dy .............................................................................. 55

b. Theo hnh dng......................................................................................... 56
c. Theo s thay i ca h s t cm .......................................................... 57
d. Theo khu vc tn s lm vic.................................................................. 57
e. Theo ng dng......................................................................................... 57
IV. Bin p ...................................................................................................................................58
1. K hiu v cu to ca bin p............................................................................... 58

2. Nguyn tc hot ng ca my bin p................................................................. 59
Cu kin in t
131
Mc lc
3. Cc tham s k thut ca bin p .......................................................................... 59
a. H s ghp bin p K................................................................................ 59

b. Cc t l ca bin p ................................................................................. 60
4. Phn loi v ng dng ca bin p ........................................................................ 61
a. Bin p ngun (bin p cp in)............................................................ 61

b. Bin p cng hng.................................................................................. 62
c. Bin p m tn .......................................................................................... 62
CHNG III ..........................................................................................................................................63
Linh kin tch cc

I. lp chuyn tip P-n..........................................................................................................63
1. S hnh thnh lp chuyn tip P N v tnh cht ca n ................................... 63

2. Lp chuyn tip P N phn cc thun (Forward Bias)....................................... 64
3. Lp chuyn tip P N phn cc ngc (Reverse Bias) ......................................... 65
4. c tuyn Von - Ampe ca chuyn tip P N ...................................................... 66
II. Diode .......................................................................................................................................67
1.
Cu to v k hiu.............................................................................................. 67
2.
Nguyn tc lm vic, c tuyn Von-ampe ca diode ..................................... 67
3. M hnh gn ng v tham s ca diode............................................................... 70
a. S tng ng khi diode phn cc thun......................................... 70

b. S tng ng khi diode phn cc ngc ........................................ 71
4. Cc tham s tnh ca diode..................................................................................... 72
a. in tr tnh R0 ........................................................................................ 72
b. in tr ng Ri ........................................................................................ 73
c. H s chnh lu k...................................................................................... 73
d. in dung Cd ca diode ............................................................................ 73
e. in p ngc cc i cho php .............................................................. 74
f. Khong nhit lm vic......................................................................... 74
5. Phn loi v ng dng............................................................................................. 75
a. Diode chnh lu (nn in Rectifier).................................................... 75

b. Diode n p (Zene) ................................................................................... 76
c. Diode xung ................................................................................................ 77
d. Diode bin dung (Varicap)....................................................................... 78
e. Diode tunen (diode xuyn hm hay diode esaki)..................................... 78
f. Diode cao tn............................................................................................. 79
g. Diode pht sng (LED Light emitting Diode) ...................................... 79
h. Diode thu sng (Photo diode) .................................................................. 80
i. T bo quang in ..................................................................................... 80
III. Transistor lng cc - BJT .....................................................................................80
1.
2.
132
Cu to v k hiu BJT...................................................................................... 81
Nguyn tc lm vic ca transistor ch tch cc (ch khuch i).... 84
Cu kin in t
Mc lc
3.
Transistor lm vic nh kho in t............................................................... 86
a. Ch ngt ............................................................................................... 87
b. Ch dn bo ho.................................................................................. 87
4.
5.
c tnh tn s ca Transistor .......................................................................... 88

Phn cc v nh im lm vic cho Transistor .............................................. 89
a. Nguyn tc chung..................................................................................... 89
b. Mch phn dng c nh......................................................................... 90
c. Mch hi tip m in p ......................................................................... 91
d. Mch hi tip m dng in (mch t phn cc) ................................... 91
6.
7.
n nh im cng tc tnh ............................................................................... 92

Cc cch mc c bn ca transistor lm vic ch khuch i................ 92
a. S mc cc gc chung (BC - base common) ...................................... 93

b. S mc cc pht chung (EC - Emitter Common)............................... 95
c. S mc cc gp chung (CC Collector common) ............................. 97
IV. Transistor hiu ng trng (FET Field effect Transistor).............................98
1. Khi nim chung...................................................................................................... 98
a. Nguyn tc hot ng............................................................................... 98

b. Phn loi ................................................................................................... 98
c. K hiu FET trong s mch ................................................................ 99
d. u im v nhc im ca FET ............................................................ 99
2.
Transistor trng iu khin bng tip xc P - N (JFET).............................. 99
a. Cu to v nguyn tc hot ng............................................................. 99

b. c tuyn truyn t, c tuyn ra ........................................................ 101
3.
Transistor trng loi MOSFET .................................................................... 102
a. Cu to ca MOSFET............................................................................ 103
b. Nguyn tc lm vic................................................................................ 104
c. Cc s mc FET................................................................................. 105
V. Mt s loi linh kin tch cc khc................................................................107
1. Transistor mt tip gip (UJT) ............................................................................ 107
a. Cu to v k hiu .................................................................................. 107

b. Nguyn tc hot ng............................................................................. 107
c. Mt s mch ng dng ca UJT............................................................ 108
2. PUT (Programmable UJT - UJT iu khin c) ............................................ 109
a. Cu to v k hiu .................................................................................. 109

b. Nguyn tc hot ng............................................................................. 109
c. Cc ng dng ca PUT. ......................................................................... 110
3. Chnh lu c iu khin SCR (Silicon Controlled Rectifier)............................ 110
a. Cu to v k hiu .................................................................................. 110

b. Nguyn tc hot ng............................................................................. 110
4. DIAC v TRIAC.................................................................................................... 111
a. DIAC ...................................................................................................... 111

b. TRIAC .................................................................................................... 112
Cu kin in t
133
Mc lc
CHNG IV ........................................................................................................................................114
Linh kin quang in t

I. khi nim chung v k thut quang in t ................................................114
1. nh ngha.............................................................................................................. 114
2. Phn loi linh kin quang in t ........................................................................ 114
II. cc linh kin pht quang........................................................................................114
1.
Nguyn l bc x .............................................................................................. 114
a. S bc x nh sng khng kt hp (bc x t pht) ............................ 115

b. S bc x nh sng kt hp (bc x kch thch) ................................... 115
2.
Diode pht quang - LED (Light Emitting Diode).......................................... 116
a. Cu to v k hiu LED ......................................................................... 116

b. Nguyn tc lm vic ca LED................................................................ 116
c. Tham s ca LED................................................................................... 117
d. Phn loi v ng dng ca LED ........................................................... 118
3.
LASER .............................................................................................................. 119
Nguyn tc hot ng................................................................................. 119

III. Cc linh kin thu quang.........................................................................................119
1.
2.
Cc thng s c bn ca b thu quang ........................................................... 120

Mt s linh kin thu quang.............................................................................. 121
a. in tr quang ........................................................................................ 121

b. T bo quang in .................................................................................. 122
c. Diode quang (Photodiode)..................................................................... 123
d. Transistor quang lng cc (Phototransistor) ...................................... 123
IV. Mt ch th tinh th lng LCD ............................................................................125
1. Khi nim ............................................................................................................... 125

2. Cu to ca thanh LCD ........................................................................................ 125
3. Nguyn tc lm vic............................................................................................... 126
a. Ch phn chiu.................................................................................. 126

b. Ch thng sng .................................................................................. 126
3. Mt s loi LCD tiu biu..................................................................................... 127
4. Tham s ca LCD.................................................................................................. 127
Ti liu tham kho
134
Cu kin in t

Cau Kien Dien Tu - Pham Thanh Huyen

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Cau Kien Dien Tu - Pham Thanh Huyen

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Phm Thanh Huyn

Chng I: C s vt l ca vt liu linh kin

C s vt l ca vt liu linh kin

Chng I: C s vt l ca vt liu linh kin

Cc in t lin kt vi ht nhn khng phi nhng mc nng lng bt k m

Hai tin ca Bohr:

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

2. Cc mc nng lng ca nguyn t

Ta thy ng vi mi gi tr ca n s c mt mc nng lng tng ng. Tp hp

Chng I: C s vt l ca vt liu linh kin

Ngi ta chn mc nng lng thp nht l mc 0 (mc t- ground) cn cc mc

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

Chng I: C s vt l ca vt liu linh kin

5. S phn b nng lng ca in t hm Fecmi

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

II. Cht cch in (dielectric)

Chng I: C s vt l ca vt liu linh kin

hay khng kh gia hai bn cc ca n bng cht in mi s biu din phn cc ca

V gin vecto tng ng l:

Khi tn hao c tnh:

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

IC.M : tng cc thnh phn dng in phn cc

Chng I: C s vt l ca vt liu linh kin

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

: in tr sut [m, mm]

T : in tr sut ti nhit T [K]

Chng I: C s vt l ca vt liu linh kin

: h s nhit ca in tr sut [K-1]

Bn ngoi kim loi

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

b. Cht dn in c in tr sut cao

Chng I: C s vt l ca vt liu linh kin

vi B l cm ng t [Tesla] v H l cng t trng [A/m]

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

Chng I: C s vt l ca vt liu linh kin

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

Chng I: C s vt l ca vt liu linh kin

my video. Bn thn bng t cha hng triu cc ht oxit st c gn trn mt dy bng

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

Chng I: C s vt l ca vt liu linh kin

n, p: nng in t v l trng trong vng dn v vng ha tr

2. Bn dn thun (bn dn nguyn tnh Intrinsic)

b. Mt s cht bn dn thng dng

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

Chng I: C s vt l ca vt liu linh kin

in t vng ho tr nhy ln vng dn).

Pham Thanh Huyen_GTVT

Chng I: C s vt l ca vt liu linh kin

Chng I: C s vt l ca vt liu linh kin

b. Dng in tri (drift current)

T cng thc ca dn in ta thy nng pha tp cht cng cao dn in

Pham Thanh Huyen_GTVT

Chng II: Linh kin th ng

Chng II: Linh kin th ng