Power Devices

lCl lall zoz O.
1tescases

lCl lall zoz O. 1tescases
Source: W.1. Ng

Source: W.1. Ng

Losses ln Synchronous LC-LC
ConverLer

Used ln low-volLuge, low ower ullcuLlons
All MOSlL1s conLuln uruslLlc body-dlode
Chooslng oLlmul deud-Llme ls crlLlcul for hlgh emclency
Leud-Llmes ure Loo long (body-dlode conducLlon):
V
x
Chooslng oLlmul deud-Llme ls crlLlcul for hlgh emclency
Leud-Llmes ure Loo shorL (cuuclLlve swlLchlng loss):
V
x
NeguLlve vulley
currenL churges
vx when LS Lurns
o!
Power Llodes
Uneven doping in 2
semiconductor regions to
minimize capacitance and
improve switching time
Depletion (junction)
capacitance:
The depletion region extends mostly into the lightly doped region
Larger lightly doped region can support a larger reverse breakdown
voltage (recall punch-through versus avalanche breakdown)
Diffusion capacitance
associated with presence of
carriers:
R
on
is directly proportional to the length of the lightly doped region
Trade-off: R
on
vs. BV (on-state vs. off-state performance)
Turn-on is very fast in modern power diodes (negligible losses)
Static characteristic: V
f
Turn-off:
t
r
: reverse recovery time
Q
r:
Reverse recovery charge

Prlce: s
Power MOSlL1s
R
on
Q v
gs
All ower MOSlL1s oeruLe ln triode:
BV: dlrecLly roorLlonul Lo chunnel lengLh L
R
on
: lnversly roorLlonul Lo WjL(v
gs
-v
Lh
)
C
gs
: dlrecLly roorLlonul Lo WL
1rude-o beLween seed, R
on,
8v

Source: W.1. Ng

verLlcul chunnel for currenL ow (less R
on
er unlL ureu on Lhe wufer)
8eLLer ureu usuge for lurge ower MOSlL1s
Louble dluslon rocess for deFnlng shorL guLe lengLh LMOS
Used ln muny commerclul ullcuLlons (good Lrude-o beLween erformunce und
rocesslng cosL
Wufer:
Source: W.1. Ng

1rue verLlcul devlce (besL ureu usuge)
lmroved llgure-of-MerlL Ron x Areu (mmm
z
)
1rench eLchlng Lechnlque deFnes Lhe chunnel
Oxlde Flls Lhe Lrench
LlmculL Lo eLch dee Lrench
LuyouL uLLern for lurge ower MOSlL1s ls
crlLlcul for low R
on
und fusL seed
Power MOSlL1s (unllke 811) huve u
oslLlve LemeruLure coemclenL whlch cun
resulL ln Lhermul runuwuy for lurge urullel
devlces
HLXlL1 uses u honey comb uLLern Lo
emclenLly uck Lhe devlces ln u smull ureu
Source: lnLernuLlonul recLlFer
Recull Lhe Lrude-o beLween C
guLe
8
R
on
for owers MOSlL1s
1he guLe-drlve ower losses become
slgnlFcunL uL hlgh-frequency
lor low R
on
devlces (hlgh emclency uL
heuvy loud), Lhe lurge guLe cuuclLunce
glves low emclency uL llghL louds
Power MOSlL1s huve u non-llneur guLe churge (C=f(v))
1he merlL of u ower MOSlL1 ls usuully culculuLed bused on Lhe LoLul guLe
churge O
g

Typica| FOM: R
on
x O
g
V
dr
1ylcul swlLchlng wuveforms:
v
DS
Source: lnLernuLlonul RecLlFer
Puckuges Lo be evuluuLed:
Smull slgnul urumeLers (AC)
1esL lreq.
lrom
LrunslenL
LesL
Power 1runslsLor RobusLness:
Unclumed lnducLlve
SwlLchlng (UlS)
UlS LesL ls lmorLunL Lo quunLlfy Lhe robusLness of u ower MOSlL1
Source: NXP.com
Source: NXP
1esL wuveforms:
Avulunche breukdown
mode: hlgh losses
Source: NXP
1esL wuveforms:
Lurge LemeruLure rlse
durlng uvulunche mode
Power:
Source: NXP
lnsuluLed CuLe 8lolur
1runslsLor (lC81)
AdvunLuges of MOS:
o Hlgh guLe lmedunce (slmlerjmosL emclenL drlver deslgn)
AdvunLuge of 811
o Hlgh currenL cuuclLy
lC81 hus lnuL orL slmllur Lo MOSlL1 und ouLuL orL slmllur Lo ower 811
PNP
NMOS
Unllke MOS, lC81 ls u blolur devlce (boLh mu|orlLy und mlnorlLy currlers luy
u role ln conducLlon)
ln|ecLlon of elecLrons lnLo collecLor reglon reduces Lhe reslsLunce comured Lo
MOSlL1
zov < 8v < . kv
|

|
z
l

C

G

Currler ln|ecLlon ln on sLuLe (reduced reslsLunce for n- reglon)
AddlLlonul
currenL
comured Lo
MOS
Slmllur Lo MOS, Lrench lC81 glves lmroved on-sLuLe churucLerlsLlcs und
currenL denslLy
lor Lhe sume ureu 8 breukdown volLuge (> 6oov), lC81 hus lower volLuge dro
8 slower swlLchlng seed comured Lo MOSlL1
Levlce #: 6oov, 8A lC81

lor Lhe sume ureu 8 breukdown volLuge, lC81 hus lower volLuge dro buL
slower swlLchlng seed
Levlce #:
v
ce
= .v Q zA (W)
O
g
= o nC Q v
CL
= v
L
d(o)
= ns
Levlce #z: 6oov, 6A MOSlL1
Levlce #z (MOSlL1):
v
LS
= .6v Q z8A (ozW)
O
g
= z8o nC Q v
CS
= ov
L
d(o)
= go ns
Levlce # (lC81):
v
ce
= .v Q zA (W)
O
g
= o nC Q v
CL
= v
L
d(o)
= ns
Lmerglng Power Levlces:
Slllcon Curblde
1he lruunhofer lnsLlLue for Solur Lnergy SysLems (lSL) ls one of Lhe leuders ln hlgh emclency lnverLer
deslgn
Sl vs. SlC hyslcul urumeLers
Source: slced.com
lor cluss Sl MOSlL1s, Lhe Lechnology ls very muLure, whlle SlC ls emerglng.
1oduy:
Sl-MOSlL1 R
on
: - oo mcm
z
SlC R
on
: - o mcm
z

SlC resenLs Lremendous oorLunlLles
luLure esLlmuLe:
Sl-MOSlL1 R
on
: - oo mcm
z

SlC R
on
: - mcm
z

Scullng of SlC MOSlL1 from Cree:
Source: L. Crlder, Cree, lnc. zoo8
Louble lmlunLed MOSlL1 (LMOSlL1) for .zkv-o kv ullcuLlons
Low R
on,s
Hlgh swlLchlng seed
AcceLuble rellublllLy
SlC .z kv j oo A ower module for HLv ullcuLlons (f
s
= o kHz)
SlC .z kv j o A SlC MOSlL1
o kv llmlL for SlC unlolur devlces (MOSj SchoLLky dlodes) SlC lC81 needed
ljv Q o
o
c 1
|
Normullzed R
on
vs. 1em

Cree demonsLruLlon of .zkvjoA SlC MOSlL1 boosL converLer oeruLlng > 8o
o
C for z hours:
Puckuged SlC MOSlL1
Source: 8. 8urger, lruunhofer lnsLlLue, LU PvSLC'o8
SLundurd Lhree-huse (86-brldge) lnverLer
v
dc
= ,o v
P
mux
= , kW
l
s
= 6.6 kHz
Power devlces (lC81 vs. SlC MOS)
SlC MOSlL1: CNM oog
lC81 z: 8SMCLzoLNz
lC81 : lSzRzY1 (llX)
lC81 : lSzRzW1 (llX)
SLundurd Lhree-huse (86-brldge) lnverLer
v
dc
= ,o v
P
mux
= , kW
ls = 6.6 kHz
LlglLul conLrol wlLh LSP
O. WhuL ls Lhls?
SlC oers .z, % emclency lmrovemenL of Lhe besL lC81, Lhls reresenLs u reducLlon of ln Lhe
losses
1he welghLed emclency ls lmroved by z %
AL Lhe currenL ruLe of develomenL lL would Luke zo yeurs ( generuLlons) for lC81s Lo huve Lhe sume
erformunce us Lhe SlC MOSlL1s of Loduy
On-Chl Power SLuge:
Cluss-L Lxumle

Lxumle of on-chl Power Levlces Mlxed-slgnul clrculLs
z x o W cluss-L uudlo umllFer (88 % emclency uL zxW), lSSCC'o
ov LMOS

Lxumle of on-chl Power Levlces Mlxed-slgnul clrculLs
z x o W cluss-L uudlo umllFer (88 % emclency uL zxW
ov LMOS
O. Where ls Lhe PMOS, NMOS?

Power Devices

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lCl lall zoz O.

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