UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE HIGH SPEED POWER

SWITCHING TRANSISTOR

FEATURES
* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications 1
* Well controlled storage-time spread for all range of hFE

TO-220F

1: Base 2: Collector 3: Emitter

*Pb-free plating product number: 2SC5305L

ABSOLUTE MAXIMUM RATINGS

(TC=25℃, unless otherwise noted.)
PARAMETER SYMBOL RATINGS UNIT
Collector Base Voltage VCBO 800 V
Collector Emitter Voltage VCEO 400 V
Emitter Base Voltage VEBO 12 V
Collector Current (DC) IC 5 A
Collector Current (Pulse)* ICP 10 A
Base Current (DC) IB 2 A
Base Current (Pulse)* IBP 4 A
Power Dissipation (TC=25℃) PC 75 W
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -65 ~ 150 ℃

THERMAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance
Junction to Case RθJC 1.65 ℃/W
Junction to Ambient RθJA 62.5

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UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNIT
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 BVCBO 800 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 BVCEO 400 V
Emitter Cut-off Current IE=1mA, IC=0 BVEBO 12 V
Collector Cut-off Current VCB=500V, IE=0 ICBO 10 µA
Emitter Cut-off Current VEB = 9V, IC = 0 IEBO 10 µA
VCE=1V, IC=0.8A hFE1 22
DC Current Gain
VCE=1V,IC=2A hFE2 8
IC=0.8A, IB=0.08A 0.4
Collector-Emitter Saturation Voltage VCE (sat) V
IC=2A, IB=0.4A 0.5
IC=0.8A, IB=0.08A 1.0
Base-Emitter Saturation Voltage VBE (sat) V
IC=2A, IB=0.4A 1.0
Output Capacitance Cob VCB = 10V, f=1MHz 75 pF
Turn ON Time tON VCC=300V, IC =2A 150 ns
Storage Time tSTG IB1 = 0.4A, IB2=-1A 2 µs
Fall Time tF RL = 150Ω 0.2 µs
Storage Time tSTG VCC=15V,VZ=300V 2.25 µs
IC = 2A,IB1 = 0.4A
Fall Time tF 150 ns
IB2 = -0.4A, LC=200µH
IF = 1A 1.5
Diode Forward Voltage VF V
IF = 2A 1.6
IF = 0.4A 800 ns
Reverse recovery time*
trr IF = 1A 1.4 µs
(di/dt =10A/µs)
IF = 2A 1.9 µs
*Pulse Test : Pulse Width=5mS, Duty cycles≦10%

Static Characteristic DC current Gain

5 100
IB = 500mA VCE = 1V
COLLECTOR CURRENT, I C (A)

IB = 450mA Ta = 125℃
IB = 400mA
FE

4 IB = 350mA
IB = 300mA 25℃
DC CURRENT GAIN, h

IB = 250mA
IB = 200mA
-25℃
3 IB = 150mA

IB = 100mA
10
2 IB = 50mA

IB = 0
0 1
0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10
COLLECTOR-EMITTER VOLTAGE, V CE (V) COLLECTOR CURRENT, I C (A)

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UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR
DC current Gain Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100 10
VCE = 5V IC = 10 IB

BE(sat),
Ta = 125℃
hFE, DC CURRENT GAIN

25℃

SATURATION VOLTAGE, V
-20℃ 1 VBE(sat)

V CE(sat) (V)
10
VCE(sat)
0.1

1 0.01
0.01 0.1 1 10 0.01 0.1 1 10
COLLECTOR CURRENT, I C (A) COLLECTOR CURRENT, I C (A)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

100 10
SATURATION VOLTAGE, V CE(sat) (V)

IC = 5IB IC = 5IB
SATURATION VOLTAGE, V BE(sat) (V)
25℃

Ta = 125℃ 1 -20℃

0.1
25℃
-20℃ Ta = 125℃

0.01 0.1
0.01 0.1 1 10 0.01 0.1 1 10
COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, IC (A)

Switching Time Collector Output Capacitance

10 1000
VCC = 300V f = 1MHz
IC = 5IB1 = -2.5IB2
CAPACITANCE, Cob (pF)

tSTG
(µS)

1 100
t
STG, F

tF
TIME, t

0.1 10

0.01 1
0.1 1 10 1 10 100
COLLECTOR CURRENT, I C (A) COLLECTOR-BASE VOLTAGE, V CB (V)

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UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR
Reverse Recovery Time Forward Diode Voltage
1.6 10

(V)
REVERSE RECOVERY TIME, trr

F
FORWARD DIODE VOLTAGE, V
1.4
(µS)

1.2 1

1.0

0.8 0.1
1.0 1.5 2.0 0.01 0.1 1 10
FORWARD CURRENT, IF(A) FORWARD DIODE CURRENT, I F (A)

Safe Operating Area Power Derating

100 100
COLLECTOR CURRENT, I C (A)

(W)
80
10 C
POWER DISSIPATION, P
1μs
10μs 60
1 DC 1ms
5ms
40

0.1
20

0.01 0
10 100 1000 0 25 50 75 100 125 150 175
COLLECTOR-EMITTER VOLTAGE, V CE (V) CASE TEMPERATURE, T C (℃)

UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.

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