Transistor Basics

Intrinsic and Extrinsic

Intrinsic
ni ~ 12 e-h pairs
per cube of 10um side
10
13
Silicon atoms in the same
Poor conductor
Extrinsic:
P-type:

!
: !cceptor "oncentration
#oles are ma$ority carriers
Extrinsic:
-type:

%
: %onor concentration
Electrons are ma$ority carriers
pn-Junction
&
&
& - -
- -
- -
n
&
-type p-type
'e(ion depleted
of carriers

%
))
!
d
2

d
2
=
.
2c
s
qN
A
.
1
bi
Pn-Junction current
&
&
& - -
- -
- -
n
&
-type p-type
*
& -
I
o
I
*
I =I
o
(e
V
1
t
1)
1
t
=kT / q
I
o
is a stron( function of temperature +doubles e,ery 10"-
In di(ital "./S circuits0 diodes are 1ept re,erse biased
Pn-Junction reverse bias
&
&
& - -
- -
- -
n
&
-type p-type
*
'
- &
d
2
=
.
2c
s
qN
A
.
1
bi
+V
R
C
j
=
c
s
d
2
=
.
N
A
qc
s
.
2(1
bi
+V
R
)
d
2

Small si(nal capacitance
per unit area
Inversion
!ccumulation
*
(
2 0
!ttract holes
to surface
+not used typically
for di(ital circuits-
Inversion
n
surface

!
*
3
V
T
=V
T0
+(
.
V
SB
+1
o

.
1
o
)
4ody effect coefficient
Current flow: Fluid flow model
Terminal Voltaes
n!"# cutoff
n!"# $inear
n!"# #aturation
Fluid Flow !odel
Pinchoff and hence
current saturation
5inear 'e(ion
Stron( In,ersion
%epletion
Current curves
$inear %eion
Q
ch
=C
g
(V
gc
V
T
)
V
c
=(V
s
+V
d
)/ 2=V
s
+V
ds
/ 2
V
gc
=V
g
V
c
=V
gs
V
ds
/ 2
C
g
=c
ox
WL
t
ox
=C
ox
WL
+=jE=jV
ds
/ L
I
ds
=
Q
ch
L/ +
I
ds
=jC
ox
W
L
(V
gs
V
T
V
ds
/ 2) V
ds
#aturation %eion
At onset of sat!ation: V
ds
=V
gs
V
T
sbstitting ineqation be"o#(continit$)
I
ds
=jC
ox
W
L
(V
gs
V
T
V
ds
/ 2)V
ds
I
ds
=jC
ox
W
L
(V
gs
V
T
)
2
$on c&annel model
#'uare law versus realit(
$ea)ae
~ *dd
6 0
/
/77
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