2-3 IGBT

Selection Guide
By VCES
VCES
(V)
330
330
400
600
600
600
600
600
600

IC
(A)
20
30
20
20
25
30
30
50
50

PC
(W)
35
35
35
35
60
60
60
150
150

Part Number

Package

FGT312
FGT313
FGT412
FGT612
FGM622S
FGM603
FGM623S
MGD623N
MGD623S

TO220F(FM20)
TO220F(FM20)
TO220F(FM20)
TO220F(FM20)
TO3PF(FM100)
TO3PF(FM100)
TO3PF(FM100)
TO3P(MT100)
TO3P(MT100)

Transistors

153

2-3 IGBT

Specifications List by Part Number

Absolute Maximum Ratings (Ta=25C)
Part
Number

VCES

VGE

IC

IC(pulse)

PC
(Ta=25C)

(V)

(V)

(A)

(A)

(W)

IGES
ICES
VGE(th)
Conditions
Conditions
Conditions
(nA)
(V)
VGE (A)
VCE
IC
VCE
max
min
max (mA) (V)
(V) max
(V)

VCE(sat)
Conditions
(V)
IC
VGE
typ
max
(A)
(V)

Cies Coes Cres

(pF)
typ

(pF)
typ

(pF)
typ

Conditions
VGE
VCE
(V)
(V)

FGM603

600

20

30

90

60

100

20

100

600

10

1.6

2.0

30

15

4600

110

80

20

FGM622S

600

30

25

75

60

500

30

100

600

10

1.7

1.9

25

15

1300

80

40

20

FGM623S

600

30

30

100

60

500

30

100

600

10

1.5

1.7

30

15

2500

150

80

20

FGT312

330

30

20

120

35

100

30

100

330

10

1.3

1.7

20

15

1200

130

65

20

FGT313

330

30

30

200

35

100

30

100

330

10

1.3

1.7

30

15

2400

110

60

30

FGT412

400

30

20

120

35

100

30

100

400

10

1.4

1.8

20

15

1200

120

65

20

FGT612

600

30

20

120

35

100

30

100

600

10

1.6

2.0

20

15

1200

80

40

20

MGD623N

600

30

50

100

150

100

30

100

600

10

1.7

2.3

50

15

2500

150

80

20

MGD623S

600

30

50

100

150

100

30

100

600

10

1.8

2.4

50

15

2500

150

80

20

154

Transistors

2-3 IGBT

Electrical Characteristics (Ta=25C)

td(off)
tr
td(on)
tf
(ns)
typ

(ns)
typ

(ns)
typ

(ns)
typ

Qg

IC
(A)

Conditions
VCE
(V)

(nC)
typ

Qge
(nC)
typ

Qgc
(nC)
typ

VF
IC
(A)

Conditions
VCE
VGE
(V)
(V)

(V)
typ

Mass

trr
Conditions
IF
(s)
(A)
typ
max

Conditions
IF
di/dt
(A) (A/s)

Package
(g)

130

70

340

200

30

300 L Load

120

30

30

30

300

15

TO3PF(FM100) 6.5

50

60

200

120

25

300 L Load

40

10

10

25

300

15

TO3PF(FM100) 6.5

100

80

300

120

30

300 L Load

65

20

20

30

300

15

TO3PF(FM100) 6.5

15

30

55

210

20

150 R Load

35

10

20

150

15

TO220F(FM20) 2.0

20

90

90

180

60

250 R Load

65

10

20

60

250

15

TO220F(FM20) 2.0

15

35

55

220

20

200 R Load

35

10

20

200

15

TO220F(FM20) 2.0

25

60

70

190

20

300 R Load

35

20

300

15

TO220F(FM20) 2.0

75

70

250

200

50

300 L Load

65

15

20

50

300

15

1.2

1.6

30

0.3

30

100 TO3P(MT100)

6.0 Built-in Di

75

70

250

120

50

300 L Load

65

15

20

50

300

15

1.2

1.6

30

0.3

30

100 TO3P(MT100)

6.0 Built-in Di

Transistors

155

Package Type (Dimensions)

TO-220F (FM20)

TO-220 (MT-25)

TO-3P (MT-100)

3.2 0.1

2.0
19.90.3
4.0

13.10.5

2.40.2

2 +0.2
0.1

20.0min
3.5

0.2

0.5 0.1

2.540.2

0.45+0.2
0.1

3 +0.2
0.1
1.05+0.2
0.1

5.45 0.1
B

100.2

5.45 0.1
E

2.20.2
(1) (2) (3)

TO-3PF (FM100)

MT-200

TO-220S

0.2

10.20.3

5.450.1
4.4

0.65+0.2
0.1

1.05 +0.2
0.1
5.45 0.1

5.45 0.1
B

1.5

0.6 +0.2
0.1

1.20.2

3.0 +0.3
0.1

(1.5)

a: Part Number
b: Polarity
c: Lot No.

2.540.5
q

10.2+0.3

TO3P-5Pin
1.30 +0.10
0.05

PNP
(Including pulling
out the burr)

Gate burr

(Measured at the root)

(Measured at the root)

(Including the solder drip)

2.400.20
(R0.30)

2.540.30

4.900.20
0.800.10
2.540.20

(Including pulling
out the burr)

Gate burr

0.100.15

(0.75) 2.000.10

9.200.20

1.200.20

NPN
4.500.20

15.300.30

(0.40)
1.400.20

(1)
(2) (3)
10.000.20

0.40.1

a: Part Number
b: Lot No.

TO-263

2.540.20

+0.3

+0.2

0.86 0.1

+0.3

4.1max

20.0min

1.270.2

2.540.5

3.350.2

+0.2

0.1 0.1

2.590.2

1.270.10

(1.5)
8.60.3

3.0 0.5

21.40.3

a: Part Number
b: Lot No.

9.900.20

1.30.2

0.50 +0.10
0.05

(Including the solder drip)

1.5

3.0

1.6

(16.2)

0.8

1.750.15
2.150.15
1.05+0.2
0.1

5.450.1

4.440.2

5.5

0.8

2.1

2- 3.2 0.1

3.30.2

a
b

3.3

23.0 0.3
9.5 0.2

24.4 0.2

5.50.2
3.450.2

a: Part Number
b: Lot No.

6.0 0.2

36.4 0.3

15.60.2

1.7 +0.2
0.1

(1.4)

a: Part Number
b: Lot No.

0.65+0.2
0.1

10.0 0.5

2.54

2.0 0.1

a
b

0.15

3.9

13.0min

2.54

4.8 0.2

2.4

1.350.15
1.350.15
0.85+0.2
0.1

9.6 0.2

0.2

(3)

0.8 0.2

a
b

4.50.2
1.30.2

5.0 0.7

2.80.2
9.20.3

3.60.2

3.30.2

15.90.3

9.90.3
(8.7)

18.95MAX

(1.7)

4.0 0.3

16.0 0.3
8.4 0.2

(1.3)

15.6 0.3

4.20.2
C
2.80.2 0.5

10.00.2

(Measured at the root)

(Measured at the root)

(Measured at the root)

(Measured at the root)

(Unit : mm)

Transistors

171