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  • HW 2 SDT

    Transféré par

    Chaitanya Nitta
    9 vues4 pages
    This document discusses semiconductor device theory and contains graphs of: 1) Fermi energy (Ef) versus temperature and donor density (Nd) 2) Logarithm of intrinsic carrier concentration (no) versus inverse temperature 3) Fermi-Dirac distribution functions (F(E)) at different temperatures 4) Fermi energy (EF) versus temperature at 300K 5) Donor density (Nd) and acceptor density (Na) versus temperature 6) Additional graphs of Nd and Na versus temperature

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    sdt

    Titre original

    hw2sdt

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    This document discusses semiconductor device theory and contains graphs of: 1) Fermi energy (Ef) versus temperature and donor density (Nd) 2) Logarithm of intrinsic carrier concentration (no) versus inverse temperature 3) Fermi-Dirac distribution functions (F(E)) at different temperatures 4) Fermi energy (EF) versus temperature at 300K 5) Donor density (Nd) and acceptor density (Na) versus temperature 6) Additional graphs of Nd and Na versus temperature

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme DOCX, PDF, TXT ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
    9 vues4 pages

    HW 2 SDT

    Transféré par

    Chaitanya Nitta
    This document discusses semiconductor device theory and contains graphs of: 1) Fermi energy (Ef) versus temperature and donor density (Nd) 2) Logarithm of intrinsic carrier concentration (no) versus inverse temperature 3) Fermi-Dirac distribution functions (F(E)) at different temperatures 4) Fermi energy (EF) versus temperature at 300K 5) Donor density (Nd) and acceptor density (Na) versus temperature 6) Additional graphs of Nd and Na versus temperature

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme DOCX, PDF, TXT ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
    sur 4

    Semiconductor device theory

    H-w-2(Q2 and Q4)

    ASU-id: 1206450358

    2)
    a)

    Ef vs Temp
    8.00E-01
    7.50E-01
    7.00E-01
    6.50E-01
    6.00E-01
    5.50E-01
    5.00E-01
    4.50E-01
    4.00E-01
    3.50E-01
    3.00E-01

    efNd

    200

    400

    600

    800

    1000

    1200

    b)

    log(no) vd 1000/T
    1.00E+18
    1.00E+17
    1.00E+16
    1.00E+15

    no

    1.00E+14
    1.00E+13
    1.00E+12
    0

    10

    15

    20

    25

    Semiconductor device theory

    H-w-2(Q2 and Q4)

    ASU-id: 1206450358

    c)

    1.20E+00
    1.00E+00
    8.00E-01
    F(E)(700)
    6.00E-01

    F(E)(400)

    4.00E-01

    F(E)(200)
    F(E)(0)

    2.00E-01
    0.00E+00
    0

    0.2

    0.4

    0.6

    0.8

    1.2

    -2.00E-01

    4)

    EF(300)
    6.00E-01
    5.00E-01
    4.00E-01
    3.00E-01

    EF(300)

    2.00E-01
    1.00E-01
    0.00E+00
    0

    200

    400

    600

    800

    1000

    1200

    Semiconductor device theory

    H-w-2(Q2 and Q4)

    ASU-id: 1206450358

    9.00E-01
    8.00E-01
    7.00E-01
    6.00E-01
    5.00E-01

    efNd

    4.00E-01

    efNa

    3.00E-01
    2.00E-01
    1.00E-01
    0.00E+00
    0

    200

    400

    600

    800

    1000

    1200

    efNd
    9.00E-01
    8.00E-01
    7.00E-01
    6.00E-01
    5.00E-01
    efNd

    4.00E-01
    3.00E-01
    2.00E-01
    1.00E-01
    0.00E+00
    0

    200

    400

    600

    800

    1000

    1200

    Semiconductor device theory

    H-w-2(Q2 and Q4)

    ASU-id: 1206450358

    efNa
    7.00E-01
    6.00E-01
    5.00E-01
    4.00E-01
    efNa

    3.00E-01
    2.00E-01
    1.00E-01
    0.00E+00
    0

    200

    400

    600

    800

    1000

    1200

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