ex (https://www.edx.org) Delfex:£T2024TUx Solar Energy ‘Courseware (/courses/DelftX/ET3034TUx/2013 Fall/courseware) Course Info (/courses/DelX/ET3O34TUx/2013 | ‘munt27 /dashboard)—+ info) Discussion (/courses/DelfOX/ET3O34TUx/2013 Fall/discussion/forum) Progress (/courses/Delf X/ET3O34TUx/2013 Fall/progress) Syllabus (/courses/DelfX/ET3034TUx/2013,FallBc5f3db05824a22a92060b08bSbda9/) (Calendar (/courses/DelfeX/ET3034TUx/2013 Fall Sbifidafd334031bd6956036cb98b3c/) 4.1 MANUFACTURING OF POLY-SILICON (1 poirt possile Which of the following processes is used in order to fabricate poly.silicon? (Note that more than one answer is possible) The Czochralski process @ Fluid bed reactor process Help © The float-zone process @ The Siemens process EXPLANATION Lectures (/courses/DelfX/ET3034TUx/2013 Fall/péfoook/0/) The Czochralski and the float-zone processes are used in order to obtain mono-crystalline silicon, Hide answers) You have used 1 of submissions Show Discussion 5 About (hitos://wmw.edx.org/aboutus) Jobs (hitps://wwmwedx org/fobs) Press (hitpsi//awawedxorgipress) FAQ (htips:/wwmw.edx.org/student-faq) Contact (nttps//www.edx org/contact) ELD ts sron cron cea turing panes Haar ana MT whse risson eto bring best othighar education ta students falas, anywhere the worl wherever there interme acces. Fas re one 1MoOcs are interactive and sub ects ince computer scene, publ hea, and arial iellgence, Z New Post (hetps/www.meetup.com/edX-Global- on (ttp:/fwonfacebook.com/EdxOniine) (httpsz/ewitter.com/edxOntine) (herps:1/plus.google.com/108238383044095082" pilyoutube.com/userfedxonline)ex (https://www.edx.org) Delfex:£T2024TUx Solar Energy ‘munt27 (/dashboard) ‘Courseware (/courses/DelftX/ET3034TUx/2013 Fal/courseware) Course Info (/courses/DelX/ETSO34TUx/2013 Fal/info) Discussion (/courses/DelfOX/ET3O34TUx/2013 Fall/discussion/forum) Progress (/courses/Delf X/ET3O34TUx/2013 Fall/progress) Syllabus (/courses/DelfX/ET3034TUX/2013,FaIVBScSTB4b05E24a22a90060b0EbSbdTa9/) Lectures /courses/DelfXVET3O34TUX/2013,Fall/pdfbook/O/) (Calendar (/courses/DelfeX/ET3034TUx/2013 Fall Sbifidafd334031bd6956036cb98b3c/) 4.2 FINGER’ RESISTANCE (1.0/1.0 poirts) Consider a ci solar cell whose fingers have a resistance R = 0.192 Which would be the finger’s resistance (in 9) ifthe fingers width is doubled and the finger’s height is one third ofits initial value? a5, 0.15, Help Answer: 0.15 EXPLANATION The finger’ resistance is given by: where p isthe electrical resistivity of the metal, L the finger’ length, W the finger’ wi width is doubled and the height is one third of its initial value: th and HT the fingers height. the Iy= 5 ai Therefore Bue m3 3 Ry = $R= 30.19 = 0.150 heck Save_|_ Hide Answeris) YPsepave used 1073 submissions Show DiscussionAbout hetos/wmmiedcorg/about us) _Jobs (ttps/hmedxorgiobs) ress psimanede orgipress) FAQ tips/finwncedcorgissadente9) Contact (ipssiumniede srpfeortact) EXT tats sror prot catty ounding saris avo ana MIT whose rmsslon sto bring the best othigher education to students fal ages nyaerein the wort wherever theres Inmet access EK Fee anne MoOcsare interactive and subjects neue computer scence. public neakh, and arial illgence, (https/www.meetup.com/edy-Global- one (nttp/iwon facebook.com/EdxOnline) (https//ewitter.com/edXontine) (https://plus.google.corn/108235383044095082° (hetpit/youtube comfuser/edxonline) ae Poly epee se crgprsepele)exix (https://www.edx.org) Delfex:£T2024TUx Solar Energy ‘munt27 /dashboard)—+ ‘Courseware (/courses/DelftX/ET3034TUx/2013 Fal/courseware) Course Info (/courses/DelX/ETSO34TUx/2013 Fal/info) Discussion (/courses/DelfOX/ET3O34TUx/2013 Fall/discussion/forum) Progress (/courses/Delf X/ET3O34TUx/2013 Fall/progress) Syllabus (/courses/DelfX/ET3034TUX/2013,FaIVBScSTB4b05E24a22a90060b0EbSbdTa9/) Lectures /courses/DelfXVET3O34TUX/2013,Fall/pdfbook/O/) (Calendar (/courses/DelfeX/ET3034TUx/2013 Fall Sbifidafd334031bd6956036cb98b3c/) 4.3 SURFACE RECOMBINATION AT THE AIR/SILICON INTERFACE (1.0/1 0p0i bare crystalline silicon surface contains many defects which act as SRH recombination centers. How can the the air/nsilicon interface be reduced? We have dicussed that surface recombination Note that you can mark more than one answer. © By decreasing the doping of the n-layer. Byincreasing the doping of the n-layer. = @ By depositing a thin insulating layer on top of the n-layer. W © By depositing a thin conductive layer on top ofthe nlayer. EXPLANATION The lower the minority charge carrier density near the surface, the lower the recombination velocity atthe surface. By increasing the doping of the mayer, we can reduce the minority charge carrer density near the surface. Depositing a thin ayer ontop ofthe slcon layer reduces the number of defects atthe slicon surface, since some ofthe dangling bonds are passivated, The material must be an insulator inorder to force the electrons to remain in the sifcon layer. tide answers) You have used 1 of T submissions Show Dscussion Nowroxt About hetosi/mmmedcorg/aboutis)_Jobs (tps/wwedx orgs) = Press itpsithnmecxorgipress) FAQ ttipsu?wwmeckorg/stedent tag) — (httpy/www.meetup.com/ed-Global- or Contact (nttps://www.edx org/contact)ex (https://www.edx.org) Delfex:£T2024TUx Solar Energy ‘munt27 /dashboard)—+ ‘Courseware (/courses/DelftX/ET3034TUx/2013 Fall/courseware) Course Info (/courses/DelX/ET3O34TUx/2013 | info) Discussion (/courses/DelfOX/ET3O34TUx/2013 Fall/discussion/forum) Progress (/courses/Delf X/ET3O34TUx/2013 Fall/progress) Syllabus (/courses/DelfX/ET3034TUX/2013,FaIVBScSTB4b05E24a22a90060b0EbSbdTa9/) Lectures /courses/DelfXVET3O34TUX/2013,Fall/pdfbook/O/) (Calendar (/courses/DelfeX/ET3034TUx/2013 Fall Sbifidafd334031bd6956036cb98b3c/) 4.4 CHOOSING THE SILICON LAYER THICKNESS (1 point possible) Imagine that you are in the lab, and you can decide the thickness ofthe Slayer of your solar cel. You want to optimize the solar cell performance for a wavelength of A= 1000rm, for which the absorption coefficient is @(1000nm) = 10%cm™ "which of the following thicknesses ds; would give a better performance? Take Into account that you already know two things: (1) Beer-Lambert’s law (2) For silicon, the minority carrier difusivityis around D = 27em?/s and the minority carrer lifetime is around F = 1B ys O dg; = 100m © ds; =180um © ds; — 800m EXPLANATION Using Beer-Lambert’s law we can calculate the intensity ofthe light after passing thraugh the silicon layer: e-2(1000ea For ds; = 100m, we have + ~ 0.37, so 63% of the lights absorbed i silicon layer Fords = 180piivwe hav ‘uf the tights absorbed inthe silicon layer. i 2 Fords; ~ 30pm, wehave + ~ 0.05, so 95% of the ight is absorbed i che icon layer Iewould seem that ds; = 300 pms the best option, However, we can calculate the diffusion length as La = VD = 27 «15 + 10-® = 0.020m = 200m itwe chose ds; — 300m, we would havea silicon layer much thicker than the diffusion length, hence an inefcint collection of the charge carriers. Therefore the best option would be ds — 180 jum, which achieves aslghlty lower absorption but better collection, sine its smaller than the diffusion length. Wide answer You have used 1 of submissions Show Discussion Z New Post HelpAbout hetos/wmmedcorg/abouts)_Jobs (ttps/hwuaedx orgiobs) ress (raps eoxorgipress) PAG tnpeulonimceex orglscedenetoq) Contact (ntipsuiumwedxreycortact) LDN ats rence cetedeytunang penne Hanada ut wnese risson's te brng the best afhigher education to students fal ages anyoerein the work wherever thre Internet access EaKS ee online MoOcsare interactive and subers Indu computerslencepublicheakh, sl arial intetgence, (httpy/ww.meetup.comfed-Global- ona hueps//anaw facebook com/EdxOnline) (https://owitter.comfedxonline) (httpsif/plus.google.com/108235383044095082 (httpiviyoutube.com/user/edxonline) °esStaedk sma es need ey Poly tpt ee SNPSte)ex (https://www.edx.org) Delfex:£T2024TUx Solar Energy Courseware (/courses/DeltX/ET3034TUx/2013 Fall/courseware) Course Inf (/courses/DelfX/ETSO34TUN/2013F ‘munt27 /dashboard)—+ info) Discussion (/courses/DelfOX/ET3O34TUx/2013 Fall/discussion/forum) Progress (/courses/Delf X/ET3O34TUx/2013 Fall/progress) Syllabus (/courses/DelfX/ET3034TUX/2013,FaIVBScSTB4b05E24a22a90060b0EbSbdTa9/) Lectures /courses/DelfXVET3O34TUX/2013,Fall/pdfbook/O/) (Calendar (/courses/DelfeX/ET3034TUx/2013 Fall Sbifidafd334031bd6956036cb98b3c/) 4,5 BACK SURFACE FIELD (1.0/1.0 points) In state-ofthe-art crystallin silicon solar cells technology, based on p-type silicon, a back surface field (BSA i implemented, This BSF is implemented, because in this way: (© the barrier for HOLE collection at the back is REDUCED, INCREASING the surface recombination velocity © the barrier for ELECTRON collection at the back contact is REDUCED, DECREASING the surface recombination velocity atthe back contact. (© a BARRIERIS CREATED for HOLE collection at the back contact, INCREASING the surface recombination velocity at the back contact, © a BARRIER IS CREATED for ELECTRON collection at the velocity at the back contact, k contact, DECREASING the surface recombination Aback-surface field at the back of a crystalline silicon solar cellis realised by making a highly doped p+ region. J This region creates a barrier for electrons and is effectively acting as an electron mirror. Thereby, the electron concentration at = che back ofthe solar cell's decreased and thus the surface recombination velocity Hideanswerts) You have used 1 off submissions Show Discussion About (htpsi/wwm.edcorg/aboutus) Jobs (ntps/wwa.ed ore/jabs) = Press itpsithnmecxorgipress) FAQ ttipsu?wwmeckorg/stedent tag) — Contact (nttps://www.edx org/contact) (httpy/www.meetup.com/ed-Global- Sa merge re risson sto bring te bes ofhigher ed2zation ta students ofal ages eepnwwe facebook com/Edxontine) ‘yaar inthe word wherever teres Intemet access, Ea es online 1MoOCé ae interactive and subects include computer selene, publ hea, and arial incellgence, (httpsy/ewitter.com/eaxOntine)ex (https://www.edx.org) Delfex:£T2024TUx Solar Energy ‘munt27 /dashboard)—+ Courseware (/courses/Delf X/ET3034TUx/2013 Fal/courseware) Course Info (/courses/DelX/ET3O34TUx/2013 Fal/info) Discussion (/courses/DelfX/ETSO34TUx/2013 Fall/discussion/forum) Progress (/courses/Delf X/ET3O34TUx/2013 Fall/progress) Syllabus (/courses/DelfO/ET3034TUX/2013,FalVBScSTB4b05E24a22a9a060b0EbSbdTa9/) Lectures (/courses/DelfOVET3O34TUX/2013,Fall/pdfbook/O/) (Calendar (/courses/Delfex/ET3034TUx/2013 Fall Sbifidafd334031bd6956036cb98b3c/) 4.6 EFFECT OF BY-PASS DIODES (3.0/3.0 points) given monocrystalline silicon solar cell has the following specifications: Help Voc = 0.6V 72 identical cells with the above specifications are to be interconnected to create a PV module, Whats the open-circuit voltage (in V) of the PV module fall the solar cells are connected in a series configuration? 432, 43.2 Answer: 43.2 What s the short-circutt current (in A) of the PV module if allthe solar cells are connected ina series configuration? 5 Answer: 5 EXPLANATION Ina series connection, the vokages of f}nividual components adel up but the current through the components remains the Therefore, total Vie = 72 * 0.6 = 43.2Vand total Ip = 5 #1 = 5A Now suppose that the PV module mentioned above is setup using a series connection of solar cells with the above mentioned specifications. Two of the solar cells have gone faulty completely stop generating power), but fortunately you have bypass diodes connected across the faulty solar cells. Assume that the bypass diodes are ideal (has 2 0 voltage drop when conducting) What is the measured open-circuit voltage (in V) of the above PV module with the faulty solar cells? 42 42 Answer: 42EXPLANATION In a series connection, the voltages ofthe individual components add up but the current through the components remains the Given that two of the solar cells are faulty, the faulty cells do not contribute to the photo-generation and are instead entirely bypassed by the ideal diodes, Thus, essentially 70 cells are in operation instead of 72 as before. So the open circuit voltage willbe Voc = 70 * 0.6 = 42V. Hide answer) You have used 3 of 3 submissions Sow Discussion Z New rast About retosy/wmmedorglabouts) Jobs (tps edxorgliobs) Press (hitpsi//awnedxorgipress) FAQ (htips://wmw.edx.org/student-faq) Contact (nttps://www.edx org/contact) EIN tes conpot rte unt pamerstonardana a onose misson sto bring te bes ofhigher education to students fal ages nyamecein the wor wherever theres Intemet access FaKs Wee online MoOcsare interactive and subjects neue computer scence, public heath, and artical iellgence, (hetpv/ww.meetup.comfedx-Global- on (nttp:/iwonfacebook.com/EdxOnline) (httpsy/ewitter.com/edxOntine) (https://plus.google.com/108235383044095082 (httpviyoutube com/user/edxontine) Etseak somenatareeved ae Poey epson ee orprsepele)