S8050

NPN General Purpose Transistors

TO-92

1. EMITTER
2. BASE
3. COLLECTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current

Symbol
VCEO
VCBO
VEBO
IC

Total Device Dissipation TA=25 C

PD

Junction Temperature

Tj

Storage, Temperature

Tstg

Unit
Vdc
Vdc
Vdc
mAdc

Value
25
40
5.0
500
0.625

150

C
C

-55 to +150

ELECTRICAL CHARACTERISTICS
Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)

V(BR)CEO

25

Vdc

Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0)

V(BR)CBO

40

Vdc

Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0)

V(BR)EBO

5.0

Collector Cutoff Current (VCE= 20 Vdc, I B =0)

ICE0

0.1

uAdc

Collector Cutoff Current (VCB= 40 Vdc, IE=0)

ICBO

0.1

uAdc

Emitter Cutoff Current (VEB= 3.0Vdc, I C =0)

IEBO

0.1

uAdc

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Vdc

S8050
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Symbol

Min

TYP

Max

Unit

DC Current Gain
(IC= 50 Adc, VCE=1.0 Vdc)

hFE (1)

85

300

DC Current Gain
(IC= 500 mAdc, VCE= 1.0 Vdc)

hFE (2)

50

Collector-Emitter Saturation Voltage

(IC= 500 Adc, IB= 50 mAdc)

VCE(sat)

0.6

Vdc

Base-Emitter Saturation Voltage

(IC= 500 mAdc, IB= 50 mAdc)

VBE(sat)

1.2

Vdc

fT

150

MHz

Characteristics

ON CHARACTERISTICS

Current-Gain-Bandwidth Product
(IC= 20 mAdc, VCE=6.0 Vdc, f=30MHz)

Classification of hFE(1)
Rank

Range

85-160

120-200

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D
160-300

S8050

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S8050
unit:mm

TO-92 Outline Dimensions

E

TO-92
Dim
A
B
C
D
E
G
H
J
K
L

J
K

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Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50