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307
CHNG 09
TRANSISTORCCPHNGPHPPHNCC
9.1.TNG QUAN V TRANSISTORS:
9.1.1.CU TRC CA TRANSISTORS:
Lp kim loi tip xc
Lp Oxid
HNH H 9.1
Mi ni Nn Thu
(Base Collector Junction)
Mi ni Nn Pht
(Base Emitter Junction)
Transistor
npn
Transistor
pnp
HNH H 9.2
Mi ni pn gia vng nn
v vng thu c gi l mi ni nnthu (BaseCollector Junction) . Tng
t mi ni pn gia vng nn v
vng pht l mi ni nn pht (Base
Emitter Junction).
Cc u ra ca linh kin
c t trn mi vng v k hiu
bng cc k t E (Pht) ; B (Nn) v
C( Thu).
Vng Nn cha t tp cht
v rt mng so vi vng Pht c
nhiu tp cht nht v vng Thu c
s lng tp cht trung bnh.
HNH H 9.3
Trong hnh H9.4 trnh by phng php phn cc cho cc transistor npn v pnp linh
kin tc ng nh mt b khuch i (amplifier) . Cn nh:
Mi ni Nn Pht c phn cc thun.
Mi ni Nn Thu c phn cc nghch.
gii thch hot ng ca transistor, chng ta cn kho st cc s kin xy ra bn trong
transistor npn.
i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009
308
K THUT IN IN T CHNG 9
BC phn cc
nghch
BC phn cc
nghch
BE phn cc
thun
BE phn cc
thun
Transistor pnp
Transistor npn
Transistor npn
Transistor pnp
K THUT IN IN T CHNG 9
309
Trong hnh H9.6 trnh by cc thnh phn dng in v hng ca dng qua transistor
npn v pnp. Quan h gia cc thnh phn dng in tha nh lut Kirchhoff 1 nh sau:
IE IC IB
(9.1)
Vng ngho ti mi ni
Nn Thu (B-C)
Phn cc Nghch
mi ni Nn Thu
Dng in t
cc Thu ( IC )
Dng in t
cc Nn ( IB )
Vng ngho ti mi ni
Nn Pht (B-E)
Phn cc Thun
mi ni Nn Pht
Dng in t cc Pht
Dng in t
cc Nn ( IB )
IE IC IB
Dng in t
cc Thu ( IC )
HNH H 9.5
310
K THUT IN IN T CHNG 9
9.1.4.1.H S DC V H S DC :
H s DC c gi l li dng in DC v c nh ngha l t s dng DC qua
cc thu IC so vi dng DC qua cc nn IB . Ta c:
DC
IC
(9.2)
IB
DC
IC
(9.3)
IE
K THUT IN IN T CHNG 9
311
VBB RB IB VBE
(9.4)
VBB VBE
(9.5)
Suy ra:
IB
RB
VCC RC IC VCE
(9.6)
Suy ra:
(9.7)
TH D 9.1:
Cho mch phn cc transistor trong hnh H9.9, bit
transistor c h s DC 150 . Xc nh cc dng in: IB ;
IC ; IE v cc p VCE v VCB .
GII:
p dng quan h (9.5), ta c:
HNH H 9.9
IB
VBB VBE
RB
5 V 0,7 V
0,43mA
10 k
312
K THUT IN IN T CHNG 9
Vng ngng dn
Vng
bo
ha
Vng
hot ng
Vng
BREAK
DOWN
K THUT IN IN T CHNG 9
313
TH D 9.2:
Cho mch dng xc nh
c tnh cc thu nh trong hnh
H9.10, gi s transistor c h s
khuch i DC DC 100 , gi tr
ca dng IB kho st trong phm
vi t : 5 A 25 A .
Dng ca h c tuyn cc
thu c xc nh theo phn tch
trn trnh by trong hnh H9.12 vi
thng s IB thay i nhy cp
tng ng vi 5 A .
tc tng ca dng I .
B
314
K THUT IN IN T CHNG 9
Vng bo ha v vng
ngng dn trong c tuyn cc thu
c quan h vi ng ti in DC.
Khi cp ngun cho transistor hot
ng theo mch trong hnh H9.10
hay H9.14; phng trnh cn bng
p trong mt li chc cc thu pht
ca transistor c vit theo quan
h (9.6), ta c: VCE VCC RC .IC
Vi gi tr VCC v RC cho
trc, ta xem p VCE l hm theo
bin s IC . th m t quan h
CE
VCC ; IC 0 ti vng
ngng dn.
ng ti DC cn ct trc
VCC
; v tr ny nm su trung vng bo ha, xem hnh
RC
IB
VBB VBE
RB
3V 0,7V
0,23mA
10 k
IC SAT
10 V 0,2 V
9,8 mA
1k
K THUT IN IN T CHNG 9
315
H s khuch i DC hay hFE l thngs quan trng ca transistor, khi phn tch hay thit
k ta cn kho st thng s ny mt cch k lng v chi tit hn. Thc s DC khng hon ton
l hng s, gi tr ny thay i khi dng IC v nhit mi trng thay i , xem hnh H9.17.
Khi duy tr nhit ca cc mi ni pn n nh v gia tng dng IC h s DC tng n
mc ti a.
Khi duy tr gi tr IC khng i v thay i nhit , DC thay i trc tip khi nhit thay
i: nhit tng h s DC tng v ngc li nhit gim h s DC gim.
Trong cc ti liu k thut thng cho gi tr DC hay hFE ti gi tr dng IC nh trc. Hn
na, vi gi tr dng IC ti nhit nh trc, h s DC cng thay i theo tng linh kin d rng
cc linh kin ny c cng m s; s kin ny ph thuc vo phng thc sn xut ca mi nh
sn xut. H s DC c xc nh ng vi gi tr no ca dng IC v thng l gi tr cc tiu
Transistor cng nh cc linh kin in t khc u c gii hn trong phm vi hot ng.
Cc gii hn ny c xc nh theo thng s nh mc qui nh bi cc nh sn xut v trnh
by trong cc ti liu k thut. Theo tiu chun, gi tr ti a cho php ca cc thng s transistor
bao gm in p: VCB ; VCE ; VBE ; dng IC v cng sut tiu tn PD . Trong :
PD VCE .IC
(9.8)
316
K THUT IN IN T CHNG 9
TH D 9.4:
Cho Transistor trong hnh H9.18 c cc
gi tr cc i ca cc thng s nh sau:
PD max 800 mW ; VCE max 15 V ; IC max 100 mA
p VCC
HNH H 9.18
IB
VBB VBE
RB
5 V 0,7 V
0,195 mA
22 k
VCC VCE VR
Hay:
VCE VCC VR
Tng t nh cc linh kin bn dn khc, gi tr cng sut tiu tn PD max thng c cho
ti iu kin nhit 25oC. Khi nhit lm vic ca mi trng tng ln gi tr PD max cn hiu
chnh gim thp xung. H s gim cng sut tiu tn K PD c n v tnh theo mW o , gi PD
C
l thay i cng sut tiu tn khi nhit thay i trong khong T , ta c quan h sau:
PD KPD T
(9.9)
K THUT IN IN T CHNG 9
317
TH D 9.5:
Cho Transistor bt k c cng sut tiu tn cc i cho php l PD max 1W ti 25oC. H
s thay i cng sut tiu tn ca linh kin l KPD 5 mW o . Xc nh cng sut tiu tn ti a
PD KPD T 5 70 25 225 mW
Suy ra cng sut tiu tn ti a cho php ca transsitor khi lm vic ti 70oC l:
PDmax
70o C
PDmax
25o C
318
K THUT IN IN T CHNG 9
Ngun p AC to ra
dng AC qua cc nn dn n
dng AC qua cc thu. Dng AC
qua cc thu to p AC ngang
qua in tr RC . Tc ng ca
transistor trong trng hp ny
khuch i tn hiu AC cp vo
cc nn v c a ra trn
in tr RC . Cn nh p AC
nhn trn RC o pha so vi p
b./ Dng p AC vo v
p AC ra trn cc thu.
HNH H 9.19
AC cp vo trn cc nn. Do
mi ni nn pht phn cc
thun nn in tr ni xt i
vi tn hiu AC c gi tr rt
thp.
ie ic
vb
(9.9)
r 'e
v C RC .ic RC .ie
p AC ti cc nn c xc nh theo quan h:
vb vin RB .ib
vC c xem l p AC ra ca mch khuch i. T s ca p v C v vb l lp in p
(hay h s khuch i p) A v ca mch transistor.
Av
vc
vb
RC .ie
r 'e .ie
RC
(9.10)
r 'e
Av
RC
r 'e
1k
20
50
p AC ng ra l :
K THUT IN IN T CHNG 9
319
9.2.2.CH NG NGT:
HNH H 9.21
Theo phn tch trn, transistor hot ng trong vng ngng dn khi mi ni nn pht
khng phn cc thun. B qua nh hng c ca dng in r, tt c cc dng in khc trong
mch c gi tr bng 0 v p VCE bng p ngun ngoi VCC . Tm li:
(9.11)
IC SAT
(9.12)
IC SAT
VCC
RC
(9.13)
IB min
IC SAT
DC
(9.14)
320
K THUT IN IN T CHNG 9
TH D 9.7:
Cho mch transistor nh trong hnh H9.22; xc nh:
a./ p VCE khi Vin 0 V
b./ Dng IB min
HNH H 9.22
IC SAT
IB min
VCC
RC
IC SAT
DC
10 V
10 mA
1k
10 mA
0,05 mA 50 A
200
RB max
Vin VBE
IB min
RB
Hay:
VBB VBE
IB
5 V 0,7 V
86 k
50 A
TH D 9.8:
Cho mch transistor nh trong hnh H9.23;
trong n LED (Light - Emitting Diode) l diode
pht quang khi c phn cc thun v s khng
pht sng khi phn cc nghch hoc khng c
phn cc.
Cho dng in qua LED khi pht sng l 30
mA. p cp vo cc nn c dng xung ch nht.
Bit: VCC 9 V ; VCE SAT 0,3 V ; RC 270 ;
RB 3,3 k ; DC 50 .
Xc nh bin ca sng xung ch nht
transistor bo ha. Khi tnh ton chn dng
in qua cc nn bng 2 ln gi tr IB min m
HNH H 9.23
K THUT IN IN T CHNG 9
GII:
321
IC SAT
9 0,3
0,0322 A 32,2mA
270
Suy ra:
IB min
IC SAT
DC
32,2
0,644 mA
50
Theo yu cu ca u th d khi chn dng qua cc nn dng tnh bin cho p xung
ch nht c gi tr gp 2 ln IB min , ta c:
HNH H 9.24: Transistor v nha dng trong cc ng dng tng qut vi tn hiu c bin nh.
HNH H 9.25: Transistor v kim loi dng trong cc ng dng tng qut vi tn hiu c bin nh.
322
K THUT IN IN T CHNG 9
HNH H 9.27: Transistor c cng sut trung bnh n cng sut ln (Transistor cng sut).
K THUT IN IN T CHNG 9
323
324
K THUT IN IN T CHNG 9
K THUT IN IN T CHNG 9
325
IC 30 mA , ta c:
VCE 10 V (30 mA).(220 ) 3,4 V
im lm vic Q c k hiu l Q2 xc nh trong hnh H9.31b.
Sau cng trong hnh H9.31c, gi tr VBB c tng cao hn to ra dng IB 400 A
v dng IC 40 mA , ta c:
im ngng dn v IC IE 0
1
V
IC f VCE .VCE CC
R
R
C
C
(9.15)
326
K THUT IN IN T CHNG 9
Vng dc theo ng ti DC t v tr bo
ha n v tr ngng dn c gi l vng lm vic
tuyn tnh ca transistor. Khi transistor hot ng
trong vng ny, in p ra c ti to mt cch
tuyn tnh vi in p vo.
Trong hnh H9.34 trnh by mt th d v hot
ng ca transistor trong vng tuyn tnh. Khi cha
cp p vin vo cc nn, im lm vic Q c xc
nh qua cc php tnh sau:
IBQ
HNH H 9.34:
VBB VBE
RB
3,7 V 0,7 V
300 A
10 k
HNH H 9.35:
i ca dng cc nn v
dng cc thu khi cp p
sin dn n p gia cc
thu v pht c bin l
2,2 V dao ng quanh
im lm vic Q c
VCEQ 3,4 V .
K THUT IN IN T CHNG 9
327
TH D 9.9:
Xc nh im lm vic Q ca transistor
cho trong mch hnh H9.38. Suy ra bin nh
ca dng cc nn mch hot ng trong vng
tuyn tnh. Bit DC 200 .
GII
Vi mch cho trc cc thng s, im
lm vic Q xc nh bi cp gi tr IC v VCE .
HNH H 9.38
IB
VBB VBE
RB
10 V 0,7 V
0,1979 mA
47 k
328
K THUT IN IN T CHNG 9
Dng cc thu :
IC cutoff 0 A
IC SAT
VCC
RC
20 V
0,0606 A 60,6 mA
330
Vi kt qu tnh ton c, ta xc nh v
tr im lm vic Q trn ng ti DC, xem
hnh H9.39. im lm vic Q c chn gn
vng bo ha, mun p ra khng si dng ta
cn c bin ca dng xoay chiu qua cc
thu gii hn trong phn vi IC IC SAT ICEQ .
IB
HNH H 9.39
IC
DC
21
0,105 mA
200
K THUT IN IN T CHNG 9
329
9.4.2.1. IN TR NHP TI CC NN :
Nhn v cc nn
ca transistor
RINbase
VIN
IIN
(9.16)
HNH H 9.41
(9.17)
VIN RE .IE
(9.18)
(9.19)
RINbase DC .RE
(9.20)
HNH H 9.42
TH D 9.10:
Xc nh in tr nhp t cc nn ca transistor trong mch hnh
H9.43, bit h s khuch i DC 125
GII
p dng quan h (920), ta c:
HNH H 9.43
RBG
Hay:
RBG
RINbase .R2
RINbase R2
R2
R2
1
.R
DC
E
DC .RE .R2
DC .RE R2
(9.21)
(9.22)
330
K THUT IN IN T CHNG 9
p dng cu phn p xc nh in p
VB l p t cc nn xung n Gnd.
RBG.VCC
VB
(9.23)
RBG R1
T kt qu ny chng ta suy ra cc i
lng khc cn li trong mch bng cc quan
h sau y:
VE VB VBE
(9.24)
IE
VE
(9.25)
RE
1
(9.26)
IC . DC
DC
DC