BST

CURRENT PROGRESS

Optimizing BST Thin-film growth on varioius substrates

Platenized Silicon
AZO/Sapphire -3% Al doped
MgO/AZO/Sapphire

Desire single crystal (a 0 0) or (a a a) BST highly-orientented epitaxial growth on

hexagonal c-plane glass substrates for opto-electronic devices.
Compare with and without MgO layer

Investigating same single crystal BST thin-film structures on single crystal platenized
silicon substrates for Surface Acoustic Wave MEMS devices.
Thickness dependence

Si

Pt (111)

BST/Pt/Si
Ar:O2 = 30:5 sccm

BST/Si
Ar:O2 = 30:5 sccm

Si

BST (002)

Si

BST (011)
BST (011)

Si

BST (001)
BST (001)

intensity (a.u.)

XRD

BST/Si
Ar:O2 = 30:10 sccm

20

30

40

50

60

2Theta-Omega ()

(c)

(b)

(a)

70

80

XRD

With MgO

100

sapphire (0001)

1000

ZnO (001)

10000

BST (001)

100000

intensity (counts)

Without MgO

10
1
20

30

40

50

60

2Theta-Omega ()

70

80