TRUBA GROUP OF INSTITUTES, BHOPAL

MID SEM-II (APRIL 2014)

Subject Name: BEE (BE-104)
Batches: B1 and B3
Time:-Hrs. 2 Hrs

Max Marks:-20

Note: - Attempt all questions.

UNIT-II
Q.1 a) How the quality of core material affects the performance of the transformer?
(1)
b) Define Permeability and Reluctance in magnetic circuit.
(1)
c) Draw and explain the phasor diagram of transformer for lagging power factor Load
(2)
d) A 400 kVA transformer has a primary winding resistance of 0.5 ohm and a secondary winding resistance of
0.001ohm. The iron loss is 2.5 kW and the primary and secondary voltages are 5 kV and 320 V
respectively. If the power factor of the load is 0.85, determine the efficiency of the transformer (a) on full
load, and (b) on half load.
(3)
OR
e) A 2000-VA 230/115-V transformer has been tested to determine its equivalent circuit. The results of the
tests are shown below
Open-circuit test
Short-circuit test
VOC = 230 V
VSC = 13.2 V
IOC = 0.45 A
ISC = 6.0 A
POC = 30 W
PSC = 20.1 W
All data given were taken from the primary side of the transformer.
(a) Draw the equivalent circuit of this transformer referred to the low-voltage side of the transformer.
(b) Find the transformers voltage regulation at rated conditions and (1) 0.8 PF lagging.
(c) Determine the transformers efficiency at rated conditions and 0.8 PF lagging.

UNIT-III
Q.2 a) Explain why a three phase induction motor is called as asynchronous motor?
(1)
b) Explain back emf in a DC motor.
(1)
c) Derive the emf equation of a multi-pole DC machine
(2)
d) The frequency of the supply to the stator of an 8- pole induction motor is 50 Hz and the rotor frequency is 3
Hz. Determine (a) the slip, and (b) the rotor speed
(3)
OR
e) A shunt generator supplies a 50 kW load at 400 V through cables of resistance 0.2 ohm. If the field winding
resistance is 50 ohm and the armature resistance is 0.05 ohm, determine (a) the terminal voltage, (b) the e.m.f.
generated in the armature.

UNIT-V
Q.3 a) Define Doping and Forbidden Energy gap.
b) Differentiate between Intrinsic and Extrinsic Semi-conductor.
c) Explain Forward Biased and Reverse Biased in PN Junction Diode.
d) Draw and explain the working of N-P-N transistor in CE configuration. Why such a configuration is
mostly used
OR
e) Compare CB, CC and CE in detail.
..

(1)
(1)
(2)

(3)