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The document summarizes a study of the optical characteristics and effective Schottky barrier of polyaniline (PANI) films doped with dodecylbenzene sulphonic acid (DBSA). PANI films were synthesized using ammonium persulfate as the oxidizing agent and three concentrations of DBSA as the dopant. The optical band gap of the PANI films was found to be between 2.1-2.4eV based on UV-visible absorption spectra. A Schottky junction of Ag/PANI-DBSA/ITO was fabricated and showed rectifying behavior in current density-voltage characteristics. Increasing the DBSA concentration decreased the barrier height and increased the ideality factor of
The document summarizes a study of the optical characteristics and effective Schottky barrier of polyaniline (PANI) films doped with dodecylbenzene sulphonic acid (DBSA). PANI films were synthesized using ammonium persulfate as the oxidizing agent and three concentrations of DBSA as the dopant. The optical band gap of the PANI films was found to be between 2.1-2.4eV based on UV-visible absorption spectra. A Schottky junction of Ag/PANI-DBSA/ITO was fabricated and showed rectifying behavior in current density-voltage characteristics. Increasing the DBSA concentration decreased the barrier height and increased the ideality factor of
The document summarizes a study of the optical characteristics and effective Schottky barrier of polyaniline (PANI) films doped with dodecylbenzene sulphonic acid (DBSA). PANI films were synthesized using ammonium persulfate as the oxidizing agent and three concentrations of DBSA as the dopant. The optical band gap of the PANI films was found to be between 2.1-2.4eV based on UV-visible absorption spectra. A Schottky junction of Ag/PANI-DBSA/ITO was fabricated and showed rectifying behavior in current density-voltage characteristics. Increasing the DBSA concentration decreased the barrier height and increased the ideality factor of
Optical characteristics and effective Schottky barrier of polyaniline
(PANI) film doped with dodecylbenzene sulphonic acid (DBSA)
Sanjib Kumar Baglari and D. Sarkar* Department of Physics, Gauhati University, Guwahati, Assam 781014 Email: sanjibbaglari@gmail.com *Email: sarkardeepali@gmail.com Abstract: Conducting polymers show large range of modulation of electrical conductivity on doping(oxidation) and dedoping(reduction) cycle due to contribution of protonic conduction. This has been used in various fields for this astonishing property. In this communication, we report studies on optical characteristics of polyaniline film and metal-polyaniline (PANI) Schottky barrier junction and the effect of junction property on DBSA doping. PANI has been synthesized by the most conventional chemical polymerization methods using ammonium persulphate (APS) as oxidizing agent. Three different concentrations of DBSA, viz, 0.1, 0.3, 0.5 M/M, are used during polymerization process. DBSA is known as a dopant as well as surfactant. The optical band gap of PANI film as estimated from UV-visible spectra absorption data has been found within the range 2.1-2.4eV. A Schottky junction with configuration Ag/PANI-DBSA/ITO has been fabricated by coating of PANI-DBSA on ITO and then taking Ag contact on to it. Current density-voltage (J-V) characteristics of this junction show rectifying behavior. Junction parameter such as barrier height, ideality factor has been calculated from J-V curves shows decrease of barrier height and increase of ideality factor with increasing concentration of DBSA.