NPN SILICON TRANSISTOR

9014

TO

92

FEATURES
1.EMITTER

Power dissipation
PCM : 0.4
W Tamb=25
Collector current
A
ICM : 0.1
Collector-base voltage
V
V(BR)CBO : 50

ELECTRICAL CHARACTERISTICS
Parameter

2.BASE

1 2 3

3.COLLECTOR

Tamb=25

unless otherwise specified

Symbol

Test

conditions

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 0. 1

mA

Emitter-base breakdown voltage

V(BR)EBO

IE= 100

MIN

TYP

MAX

UNIT

50

IB=0

45

IC=0

IE=0

Collector cut-off current

ICBO

VCB=50

V,

IE=0

0.1

Collector cut-off current

ICEO

VCE=35

V,

IB=0

0.1

Emitter cut-off current

IEBO

VEB=

0.1

VCE=

V,

IC=0

DC current gain(note)

HFE

Collector-emitter saturation voltage

VCE(sat)

IC= 100mA,

IB= 5 mA

0.3

Base-emitter saturation voltage

VBE(sat)

IC= 100 mA,

IB= 5mA

VCE= 5

IC= 10mA

fT

Transition frequency

V,

IC= 1mA

60

1000

150

MHz

f =30MHz

CLASSIFICATION OF HFE(1)
Rank

Range

60-150

100-300

200-600

400-1000

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com