CST Simulation of 0th, 1st, and 2nd Order Fields in a Parallel Plate Capacitor

ECE 341
Erin Dixon-Gonzalez
January 16, 2015

The Parallel Plate Capacitor is a common frequency dependent circuit component. The
most common characteristic equations we use are Z=1/(j*w*C) for the complex impedance,
C=q/V for the capacitance by charge, and C=epsilon*Area/Separation. These equations give
very good approximations for the behavior of Parallel Plate Capacitors when working in low
frequency systems. However, as the frequency increases, the higher order effects will begin to
take over and significantly change the behavior of the Capacitor. In this simulation, we will
explore how the magnitude and phase of a Parallel Plate Capacitor change as it is exposed to
frequencies above 3GHz.
Fig. 1- Impedance by Frequency (Simulated)

Fig. 2-Impedance by Frequency (Prediction)

The above graphs show the overall behavior as frequency increases from 0 to 5GHz. In
the Prediction graph (Fig. 2), we are assuming a C value of 200 Picofarads. Notice that the
Impedance continues to approach 0 past 3.5 GHz. The simulation, however, shows the
impedance dip below zero at around 3.7 GHz, after which it begins to increase. This
discrepancy gives us a good estimate of where the model begins to break down.
Fig. 3- Phase by Frequency (Simulated)

Fig. 4- Phase by Frequency (Prediction)

The graphs for the phase of the Capacitor show a similar discrepancy beginning at around 3.7
GHz. The phase simulation gives the most interesting insight, as it appears to become an
inductive element at very high frequency. To further back up this assertion, we will examine the
3-dimensional simulations.

Fig. 5- E Field at 2 GHz

Fig. 6- E field at 5 GHz

The important details here are the blue arrows- at 2 GHz they primarily point in the
negative x direction, but at 5GHz they point in the positive x direction. Now we can use the
graphs to get some solid numbers.
Fig. 7- value at 5KHz

>

>

The simulation gives a value of about 197 Picofarads. We can now find the inductance of the
capacitor.
Fig. 8- value at 4.9 GHz

>
>
The graph obtained with these new values does not show significant improvement- however,
with a factor of correction on the inductance, we can get a much better prediction graph.
Fig. 9- Corrected predictions for Z

To further investigate, we will change the physical nature of the capacitor to more closely
resemble an electrolytic capacitor. In order to maximize Area (and thus Capacitance), they are
long strips of conductive material rolled into a tube. In theory, this should lower the frequency at
which the 2nd order effects take over, as it moves significantly further away from the
fundamental assumption of the parallel plate model (that the plates are infinite). The length of
the plates is now 100 mm and the height is 1 mm.
Fig. 10- 100mm Capacitor impedance

Fig. 11- 100mm Capacitor Phase

The results are almost comical in how far off they are. This model makes such a poor capacitor
that it switches back and forth between a capacitor and inductor about every 1 GHz.

Fig. 12- Electrical Field at 2GHz

Fig. 13- Electrical Field at 5GHz

The most interesting results can be found in the 3-D field simulations, as we can see a
sinusoidal behavior in the electric field matching the frequency. This shows solid logic for why
the model breaks down at higher frequencies, as the wavelength of the field is short enough that
it will have multiple points where it interacts with the element. We can further show this
phenomenon by simulating a very wide capacitor.

Fig. 14- 25mm by 25mm Capacitor, 5GHz

In this simulation, we can see the sinusoidal behavior in both X and Y directions. This is
in sharp contrast to the lower frequency model
Fig. 15- 1GHz

These conditions are much closer to the infinite plate assumption, as the wavelength of the field
is large enough it appears to be a constant field within the capacitor. The impedance plots
reflect as such:

Fig. 16- Magnitude and Phase of 25mm by 25mm Capacitor Impedance