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Reg. No.

M 25704

Name:
Vll Semester B.Tech. Degree (Sup./lmp. - Including Part Time)
Examination,July 2014
(2007 Admn. Onwards)
pT 2K6t2K6 EC 701 - MICROELECTRONICSTeCHTOIOCY
Max.Marks; 100

Time: 3 Hours
PART-A
andtheiroxidatipn
L a) Mentionthreethermaloxidation
species.

b) Explaintheprocessinvolvedin lithography.
profileof BJTandexplainitssignificance.
c) Drawtheconcentration
reduceshotelectroneffect.
d) ExplainhowLDDstructures
e) BrieflydescribeI baseddesignrulesfor metalsandpads.
f) BrieflydescribeditferentCMOsdesignstyles.
g) Discussthe isolationprocessof BipolarlC process.
h) Brieflyexplainballastic
transportmodel.

(8x5=40)

PART-B
ll. a)

i\

theory.
Explain
diflusion

profileofa constant
sourcediflusion.
ii) Derive
theconcentration
OR
in thesubstrate
by ion
ol impurities
distribution
b) i) Explaintheapproximate
implantation.
ii) Explainchannelling
in ionimplantation.
Bipolarprocesswithneatdiagrams.
l l l . a ) Explainadvanced

10
5
15

OR
b) Explainthe processinvolvedin twintub CMOsprocesswithneatdiagrams. 15
P.T.O.

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M 25704

lV. a) i) Realizethe logicfunctionY = A @B usingstaticCMOsdesignstyle'

8
7

ii) DrawitsstickdiagramandEuler'sdiagram.
OR
b) Realize4 bitfulladderusingstaticCMOsanddrawitsstickdiagram.

15
15

schemeswithproperdiagrams"'".,,
V. a) Explainoxideisolation

OR
b) Writeshortnoteson :
I

andtrenchisolation
isolation
i) Junction
andconductance.
resistance
ii) Quantum

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