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Diode Circuits
Now we form our first useful semiconductor device, a pn junction in a bar of Si. At first we assume that we
have a step junction i.e. the concentration changes abruptly from p to n at the pn junction interface as shown
below
In real devices we never have a perfectly abrupt junction, but this complicates our analysis of the pn junction
needlessly, since we only really need to know what is happening right around the metallurgical junction
(where the concentrations are equal).
We start our analysis of the pn junction using the Poisson equation from physics
ρ
Eq. 5.1 ∇E = which simplifies in 1-D to
K s ε0
dE ρ
Eq. 5.2 =
dx K s ε0
Eq. 5.3 ρ = q( p − n + N D − N A )
Remember that charge density = 0 in a uniformly doped semiconductor at equilibrium. Also note that ρ is
proportional to dE / dx in 1-D.
Qualitatively we will look at the pn junction problem and find the appropriate band diagram to represent the
situation. Begin with the dopants
Now we draw a band diagram for each side assuming that they are not in atomic contact.
We arbitrarily set V = 0 on the p side of the junction, and we note that there is some type of potential across
the pn junction region.
Now we want to sketch the electric field in the device. Remember that the electric field is proportional to the
derivative of the voltage with respect to x in 1-D
and it is proportional to the integral of the charge density as we saw before since electric fields are caused by
separation of charges and we note that the derivative of the electric field (with respect to x 1-D) is
proportional to the charge density
dE ρ
Eq. 5.2 =
dx K s ε0
We can see these relationships when we apply Gauss’s law to our situation
Since we are at equilibrium, we know that the net charge distribution = 0, so the area under each region in
the above figure is the same. Not only are the areas the same, note that they are of opposite sign so that the
net positive charge = net negative charge in the device, as we would expect at equilibrium.
Here we have drawn both the e- and their positively charged donor atoms on the n side and the h+ and their
negatively charged acceptor atoms on the p side. As we would expect we have charge neutrality holding on
both isolated sides. As soon as we make atomic contact between the p and n sides suddenly there is a large
concentration gradient of h+ and e-. Initially, diffusion drives the h+ into the n region and simultaneously e-
into the p region.
Now we know that the electric field is going to try and restore the equilibrium situation where we had more
e- in the n region and more h+ in the p region. This is in direct opposition to what diffusion is trying to
If the e- and h+ were uncharged particles then diffusion would drive the new equilibrium to the point where
the concentration of e- and h+ would be equal across the entire pn junction. Instead we get diffusion out of a
small region around the metallurgical junction while a drift current works in opposition. Even though there
Let’s see how big Vbi is for a typical case; NA = ND = 1e15 at 300K -> kT / q = 0.0259 and Vbi ≈ 0.6V. In
non-degenerately doped diodes the Vbi < EG / q which is simply the bandgap converted to volts. Therefore
Vbi < 1.12V.
The next step is to determine quantitatively how many carriers we have. But in order to do this we have to
solve Poisson’s equation which in 1-D is
When we try to solve this equation for ρ (x) (or n(x) and p(x) ) we assume we know the distribution of
NA(x) and ND(x) but we find we also need to know n(x) and p(x) in the scr, but they are functions of the
electric field that we are trying to solve. The electric field depends on the distribution of charge carriers, but
the charge carrier distribution depends on the electric field. Therefore solving becomes a complex task of
iterations.
So once again we simplify things by make what is known as the DEPLETION APPROXIMATION. This
allows us to make good approximations without having prior knowledge of the carrier concentrations.
What the depletion approximation does is to make a simplification to the actual charge distribution in the scr
and two things are assumed;
1. the carrier concentrations in the scr are assumed to be negligible with respect to the net doping
concentrations outside the scr
2. the charge density outside the scr is assumed to be 0
What we now have is a simple rectangular region of charge on either side of the metallurgical junction. Our
1-D Poisson equation simplifies to
Now that we have solved for all the key parameters in a pn junction diode at equilibrium, let’s add an
external (applied) voltage. We know from Kirchoff’s voltage law that when there is a closed loop electrical
system, the voltage drops around the entire circuit must sum to zero. So if we apply an external voltage of
VA, this voltage must be dropped somewhere within our circuit.
First we assume negligible voltage drops in the external wires and in the diode contacts to the outside world.
Therefore all of the drop must occur somewhere within our pn junction diode. When we add the constraint
of low-level injection (remember this means that we are not producing new charge carriers in excess of the
majority carrier concentration), then we find that the no voltage drop occurs in the quasi-neutral n and p
regions away from the scr. This leads us to the conclusion that all of the voltage drop (VA ) must occur
across the scr.
When VA > 0, the voltage on the n side of the junction is lowered relative to the p side. And the opposite
occurs when we make VA<0. In other words, the voltage drop across the scr = Vbi- VA.
Now when VA>0, we are making the end of the p region more positive and this potential attracts e-. This
lowers the potential on the n side and on our band diagram the energy barrier from the p to the n side for both
e and h is reduced as shown in the center column of the previous figure. Another way of looking at forward
bias is to think of holding both ends of the band diagram in your two hands and under forward bias, while
holding the p side steady (i.e. your reference voltage), raise the n side up with respect to e- energy.
Now what happens to our drift and diffusion components? The reduction in the energy barrier primarily
affects diffusion and since the barrier for diffusion is reduced we get increased diffusion. The drift
component does not change much since it depends on the electric field due to charge separation. The
drift component does not change much since an e- on the edge of the p side is still swept into the n side, but
we know that there are not many e- there in the first place because they are minority carriers there, therefore
the magnitude of the diffusion current changes dramatically under applied bias but the drift component
changes very little, and this is called forward biasing of the diode. We will see how this affects current
flow in the device in the next chapter, but we can guess that forward biasing will dramatically increase the
current flow through the device (and it does exponentially, see figure below).
Now what happens to our drift and diffusion components? The increase in the energy barrier again
primarily affects diffusion and since the barrier is increased we get less diffusion. The drift
component also does not change for the same reasons mentioned above, therefore the magnitude of the
diffusion current changes dramatically but little change in the drift component and this is called
reverse biasing of the diode. We can guess that reverse biasing will dramatically decrease the current flow
through the device.
2 K s ε o {Vbi − V A } N A + N D
0.5
Eq. 5.38 W =
q N AND
We see that the amount and polarity of the applied bias will affect the size of the scr width.
Now look at how ρ , the electric field and voltage have changed for the various bias conditions. First look
at Eq. 5.38 for W. We note that W (xn and xp) increases with reverse bias and decreases with forward bias.
Now for the case where we have a heavily doped p side and lightly doped n side, see below.
Now what consequence does this have on the charge density ( ρ )? The area of each of the charge regions
decreases with forward bias because we have uncovered fewer dopant atoms. Therefore we get Figure 5.11b
above.
Now what does this mean for the electric field? In forward bias we have less charge on each side, therefore
there is less total charge separation so we expect a reduced electric field as shown in Figure 5.11c above.
Finally what about the voltage? Reducing the electric field, reduces the voltage drop so we expect a reduced
voltage across the scr in forward bias as in Figure 5.11d above.
Also remember that this voltage plot is simply an inverted form of the energy band diagram and under
forward bias we saw that there was LESS band bending, therefore less voltage.