3-123 | 1 KTrtvinie Motel >. | wm Eps Na 6) | | | | a | At eg uclibriurny ia = Oe Fecoubination EHP generation vate rate . Hod Mpsdne C3-%b) i constant . & Extringe Mater > ¥ Do pra. * fry, 3712. | *® Donor & Aeepter. . Fer Si, BAL, Gu, In Ceohuny Dh) ce p> As Ceofumn V) ~) olonors BHR ESL camer and ccuptr devils Bie v o.03~0.06 eV Srentie a at fom tent the intrinsic caryien Conc, ~10'YeuS With 0! As otemslim? 3 € contentration ~ 10 Zens | ‘ doping of DS orders oF magnitude resistivity chau | sts iy change, i | Majors aud ae Covvlers , “fe x 1 aor carrie 5 mi nely Carmien s _p-ty 2 a majority carlers = Pope Figure 3-12 Energy bond model ond chemi Reet cal bond model of dopants in semi- conductors: fa donation of elec trons from donor level to conduc 5 5 vento bee sd Eee ceptance of T=0K = 50K i valence band x ™ electrons by an acceptor level cond the resuling creation of holes {¢) donor and oe ' ‘epior atoms in the covalent bond ing model of Si crystalBp |< Electrons and Holes 7» Auautum Well > | | { Toatev Figure 3-13 |___Energy band discontinuities for thin layer of GaAs sandwiched between layers of wider band gop | AlGaAs. inthis cose, the Gos region is 0 thin hat quantum states are formed inthe valence and con dation bands. Elecitons in the GaAs conduction bond reside on "particle in @ potential well” states such as | shown here, rather han inthe usual conduction bond stots, Hols in the quantum well acci- Py similar discrete sates, such aE. Application of Quantum Well . The discrete eneryy Levels increase the pheten energy =) blue shift be = &% + £,+E, 1 added ,< 3716 LS Rermin Dirac Distribution S | fey= ok / i 1+ e& t0ler 1+ée Eyal && =A > Chemicd potentidor Berm pevel . | C Mot the Rermi Energy ) , \ Rs Bobtemown Coust. (&=362K0F eU/Ke) | ¢ Pop t-types etter U(Gllose to Ee Por p- Spe? AACE) chose te Ev. ! ft E rta—| : | j & \ patho | i 5 tlt e 1 120 (@) Insinsc {I Figure 3-15 / |The Fermi isribu uy +n function ; ‘palied to / . K¢ “f semiconductors: [el intrinsic moter- «li; [o) type mo terial; [el] pype i material43-162 | ms Electron and Hobe Concentrations at Eguilr briun >. « 4 = Jf) Me dé (3-129 { E £ Ee i [7 t | oe a i Ee 7 By NCE) [L-F(EI) pup aa iB) se) concentration Figure 3-16 Schematic band diagram, density of states, FermiDirac distribution, and the cartier concentration for (0 intrinsic, fo] miype, and (| plype semiconductors at thermal equilibrium, Mo = Ne fCE) 3-3.) Mee Ettective density of Sates.43-19) No = Ne flEc). C343). ( Sle) = rece | SF er Ewart Chev Fert is Parge | comporeel to an ) 4 —E - Ei | No = Me Me 3-15) | tar ye i Me = 2 (RE) | Per bebe, pe = wli-féwJ 63-12) | An: effective densi, of states ca the i Valence band (-Fl&) W = — lL, [+ Gen Eales i _ eb SAT i ly areal J CE - e (Ev ~ ERAT +). — é -&- Bly IR Poy eo ENT e319).<3 18> Ror tutrinsie materet, Ex = Es Me = Ne C7 Ee EWAT og. (Eg Ev) [7 c Ye. i =We Gey D1 Pa = NeW e ~CEe- BAT Maps = Ne Nv eC. Ey fh C3.-22b> But te = Pa Ctntrugic materral ) . D\ an: = Urey = 63-23) iI Fer Siot RT, As EATX0" Lod, | np. = (We ee AT) (Mm ee -EAT) We M eo Me 6.)kt ~E/bT =MNy e Ch226 ) | D Meps mips se ons ps) i MoPo = Ma” (3-24) 4 No = Nee ee el = Mh eGo Gahet c® ~EMAT =n (Ep -ELVkT Po = Mo @ 7 Goy/At = aL fy € 566 -Eo)/br cae Ey Q-256) (3-258)£3-19> (Gp - EAT No = Wie { Ep)/et Po = Me eG { Lf Eps bs Mle = Ne, Pos ma’ Tt ER moves toward Ec, lo 4D expenentrell, L Pod exponestily, | If Em moves foward Gy tte b exponetilly L Po expanentrlly |< Example 3-5 >. 1 ST ts doped with /0'? As atoms Jem’ . + What 7s Po. ot d001c 2 Lt Where ts Em pelatte to Ex? | GD. Mi>> te, Me = Nd = 10”. 2 > o> pe = Be’ = LEXY 2s x1 few, Yo yo? i ‘No = ne eG Ea kT / i 9 &-t2= athe = bpp Lo” a oe Th Gave =O: ore| { i G-20>, 63.3.3. Jemperature Dependene of Gavien. Concentrations > ni'= [New © oP c3-23? Me (Ae C36) My = 2 samc) (3-26) melt) = 2 Gry (in? mg v4 al B6) Pig.3712 3 WS(T) 7s a definite number Sora given Semicnducte-, (It ts known For « given Semiwnductor > Pik Figure S-17 si 0 300 250 Intinsic carrier or concentration for 40% Ge, Si, ond GaAs 1 © function of in. verse lemperaiure. ‘The room temper: ature values ore matked for wry reerence 3000/7 6) *G-ery (Eq -B2 ler L$ Woe Ni € - (oa we know Moor po, we tan calculate Ex-G.. | | 12 Ts known for given semicondutor . | Lt we know Ep-G>, we can calulate no and Po. | hig, 3-18 i Exerc Josization | \ | 2 1 rt i Figure 3-18 \n Carter concentra \ 4 ion vs. inverse 4 Seen wo 2 4 6 8 0 2 4 donors/em*™ 10000T ("2 I< Compensation and Space Charge Meubrality > , i) What ?f we hove “both donors and accepturs? | If Md >We, the fermi level witb be Located | choser to Ee. i LP Nd. Compensation (by recombination ) !Space charge neutrality Pot Uys = to + Ma No = po + (Ng*~ ME) <8 ~22> (3-29) G28 D For Cope CAB to >? Pe), No& (M-NMa) Compensation in an miype semi: conductor (Nu> Neb