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  • Ch4 p1 12

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    hermas67
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    Ch4-p1-12

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    Ch4-p1-12

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    Ch4-p1-12

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    8 vues12 pages

    Ch4 p1 12

    Transféré par

    hermas67
    Ch4-p1-12

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme PDF ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
    sur 12
    | 14.4. Excess Caniers tn Semitonductars | a Jess than the band gap are transmitted, this experiment gives an ‘meagre of the hand osn enero Figure 4-1 Optical absorp tion of a photon with hy > fo} An EHP is created during photon ab- sorption; (b] the excited elecron gives up energy tothe latce by scattering evens; {6 the electron re- combines with hole in the vor lence band. + Adsorption occurs tf hy > Ee vy =) ff hy Es, no abserptin, =) Fens perent a. Figure 4-2 Optical absorp- tion experiment Semple D vith Chickness by eo ete eel Eas Detector absorption coetficieng 4.3) L4-2> Figure 4-3 Dependence of cptical absorption coefficient a for @ semiconductor on = the wavelength of —E incident light. Ex ‘hw (eV) —> Aum) egg Figure 4 eecae paras Intored | ine | Unrai temicondugors cus) Ga relative Yo the op- Ing> Ge si [case “fous sic 2s fied epecrum. é 7 t + a ee sum) Elev) = 1.24 Dtm>_ Poy ST. Ey = leV 2A ~ lam 2) Si_absonbes visithe Sight. Gop, CdS =) can pass photens in visible rege. dey 44,2 Lum? nescence > + Luminescence s Light eimiist Phscigh elect al ketombination Ec ie tuminestem aaa _ photon eee: Clepedis 24. ‘athodobumenescenge Cebectron bowba vilweent— E IP excitation (ee ements mechanisins ) <4.2.1 PhetDuminescene > 2 Shure rescence. phots emisst i combinatiz * Eup Dike time lor direct recombinetten < 10 Foor =) Fhhrobe seen tops within Jo~* after LXcitation Soure is turmed of f : Phosphare scence 2 after me turning off the excitation | ouce, the photon emission continu Fara Long time Csetands ov minutes) _| * phosphor : the materials that show phosphorescence, } ee # photoluminescence with a trapping dowel Co) FHP generation Cb) phonon scattering (Gives energy Lo A attic ) a bn ed ec Cd) Fhermal citatte: es in, ‘o he conduction band L Ce) be combinatz the proce Cetaud Cl) con be epeadel | befare process Ce) happens = bony tte cod hppns X_Einisston of photon Can “occur through Lhe | emitting tabors va La-5y *Phets conduct juity opticed (Mbuniee fe. = LHP generic = ca it) =) Cord uetivit = FOOD PER SAD L42)% Direct Recombinatinn cif Electr s—anel_Habes 2 _§ Let's firet think Bier) H oe Gatetas? > ily be = ge ft be combination pod v $i gGenerutio, rate Peed, mips = dpmi*= 9. C3-2b) Sale Mefe Wer proportion lity constant, t Sh = 7 os ie ee ls pas pw— Pe ee 4 Ssume that 6A = ap g_ S2A)= 5 pit) — Brom (4 -q ) —— ——— — ae SAMs = Ae CAF EADIC Pot SPA] _ ane St ola 0h [Mop b gos p> Y Pos ety Srey Ope} = mole [ (e+ Po) tut) + Salts) Coss) | . 7 — <4-9> Assume bow [tasectien 2 Anyapriy < fla, p potype po2>As n GBD ee ol petty 4—-€ ¥ Fnltso) = S71 = Br Ps a > G4) =ane GE Cretashination_Qife time OF int pority cander Oifetrme ) - =A7 Cr = Ane Ber _a-type Cito 22 Pa) 4 Sipe SoS EPG) Apli)s= Ap =o To$ Ap —F1ee COE tne vralt percentz aye Chay age Tor Pe Carier £4-%> Tee apts Th s6 UD — ew?) r= He) = te oF aoe a Po os TO Pen} OO A:ssumeg AN SAD Olt Epp Vow) £p Figure 4-7, [ Ap +py=i1x10%em—3 Decay of excess. § ———---—__— j electrons ond pe holes by recombi- see nation, for n= : pao ten ple 4-2). The ox ponenticl decoy oF Bnlt is linear cn this semiloge- rithmic graph. 4-9) $4.4 Ditfudon of Carpier: Tacit) = =p, dla y agp dle Cyrore aa Ady Jp Gift) = —p, dP yy2) dpa) 2b} : re oor 444.2 DF i nee ieks 3 ilt=in_ fi, aL Jectric field 7 plcesent tia sdditicn To the Carrier Gradient Tr= fps MOErr) + gla dd peony \ A j drift dttuston x h =22 by t a | a =50, ate The totup Current Jw) Ta) = Jaw) + Jpor) (4-24) | wanna (ditt) and, (itt) _—_ I itt at (ei) Sobid Sines cuw ee > (6) flow (ens) TE ct dached ine > purtide Sa ite) flow . HK Minvity Carriers Can. contribute Signi fi wath to the Current through dittusion <4-le> \ | dcx? : Vay= Eo) E0) : ebectron lenera,, sd t Fos Et) = dvs) Ladi ebectiic Field & Wéo) = — WM) = 1 déwl oe) dx Fd. ee — LC s se ee Le, | Let’s consider a Semicondcton with « nonutfiom alaping — * opi _ : 2 Tiere is “built-in potenti¢ 2 Ecca), BuO) ome Ps aw

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