Scribd Logo
Importer

Bienvenue sur Scribd !

  • Us Patent

    Transféré par

    hermas67
    9 vues9 pages
    patent

    Titre original

    us patent

    Copyright

    © © All Rights Reserved

    Formats disponibles

    PDF ou lisez en ligne sur Scribd

    Avez-vous trouvé ce document utile ?

    Ce contenu est-il inapproprié ?

    Signaler ce document
    patent

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme PDF ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
    9 vues9 pages

    Us Patent

    Transféré par

    hermas67
    patent

    Droits d'auteur :

    © All Rights Reserved
    Téléchargez comme PDF ou lisez en ligne sur Scribd
    Signaler comme contenu inapproprié
    sur 9
    US 20110287181A1 INH a») United States «2, Patent Application Publication (1) Pub. No: US 2011/0287181 A1 Faupel et al. (43) Pub, Date: Nov. 24, 2011 (s) METHOD FoR PRODUCING Publication Classifation NANOSTRUCTURES BY MEANS OF nal SPINODAL DECROSSLINKING ee enn ; asp 10 (2006.01) (16) Inventors: Franz Faupe, Heikendort DEE (52), USC sr7729, 421/226 Rainer Adelung, Kiel (DE} Mady Elbahri, Kiel (DE): Khaled on ABSTRACT Tirmas, Kiel (DE) Disclosed is a method for producing regularly amanged snowites from a nanowire-orming mater ona subst 21) Appl. 12751,908 Suid meth is characterized by the following steps: 2) the ‘mae is ineduced int caries Hquidat sad remaining (a) Por Fie a lest thre orders of magitude below the oaing eat ee eae of the camer liquid; b) a guiding member is placed on the Subst th subatate sheaf oa temperate t which (86) PCTNo PCTDE20081001801 2 thin fl of the carer guid undergoes spinodal 7 decrosstinking on he substrate; dln ofthe cars Hid $371 (040 thats loaded with ater applied othe heated sbstate (2), (4) Date: Apr. 15, 2011 in the surroundings of the guiding member, where a gradient othe average film thickness is cbtined perpendicular othe 6) Foreign Applicaton Priority Data contour ofthe guiding member and) the carer lui is porated sh hat the mtr set along lines extending Nov.8,2007 (DE) 10 2007053 157.7 perpendicular to the gradient ofthe fil thiknes, Patent Application Publication Nov. 24, 2011 Sheet 1 of 4 US 2011/0287181 AL “y Fig. 1 Fig. 2 Patent Application Publication Nov. 24, 2011 Sheet 2 of 4 Us 2011/0287181 AI F d 3 F FH Hi Fig. 3 Patent Application Publication Nov. 24, 2011 Sheet 3 of 4 US 2011/0287181 AL Patent Application Publication Nov. 24, 2011 Sheet 4 of 4 Us 2011/0287181 AI US 2011/0287181 Al METHOD FOR PRODUCING NANOSTRUCTURES BY MEANS OF SPINODAL DECROSSLINKING [0001] The invention relates to a method for producing ‘nanowires and nanowire grid structures that are arranged ina regular pattern. 10002] "The reproducible production of nanoscale struc- tures is in the focus of present research, among others, ‘because a multitude of applications ean be envisaged for device fabrication, fr example in the areas of photonics and clectronies, sensor technology and biotinology (eg. lab- ‘on-chip)-Known physical structuring methods suchas lithog- raphy can be employed forthe nanometer scale nly to a limited extent and are also complex and expensive. Self- organizing strcture formation (sel assembly”) from nano particles has of late received more attention, which however ‘ill not necessarily lead to technically usable, in particular regular structures. [0003] According to the view, that is now being widely held, thekey formas production of nanostructures les in the evelopment of suitable control methods that so o say pro vide the self-organized troture formation wit “the desired retin”. Further phenomena of nano sel'stevctuving are at the same time sil being discovered and investigated as to ‘whether they offer a favorable starting point for sucha contol method [0004] Sch phenomenon canbe observed during evapo ‘ation orslow vaporization ofa drop of acolloidal suspension fon a substrate, After the solvent as been removed com- pletely, typical annular deposits the colloidal material form. asa remainder onthe substate Interestingly, an arrangement ‘of largely separate ringsof the colloidal materials forme in this way and precisely nota planar distribution, as naive person might expect. [0005] To explain his phenomenon, that is also called the “eoflee stain effect”, Deegan explains in his dissertation “DEPOSITION AT PINNED AND DEPINNED CONTACT. LINES: PATTERN FORMATION AND APPLICATIONS” (University of Chicago, 1998) thatthe limiting conta line ot the suspension drop-that isto say the course ofthe drop ‘edge is fixed (‘pinned onthe subsrateby impuritieseven during evaporation. This lod to build-up of colloidal par. ticles along the contact Tine, which again even leads to a ‘enforcement ofthe fixing (“sel-pinning”) and toa transport of further suspension tothe contac line, In this way particles ‘concentrate st the contact line ual transport breaks down, ‘The drop that has been reduced in the meantime, but still exists, contacts inthe process practically with jump, thats to say it forms anew contact ine othe substrate that now les ‘more closely and the processes repeat there, Finally, several ‘more of less concent rings from colloidal material can be found afer the solvent has evaporated completely. [0006] Thephenomenon describes also called nanostruc- turinghy “eontct in pining” inthe literature. However, the structures that are found uswally have a width of a few micrometers even if they emerge from nano-scale constitu- cents Inaddition, due to rouad drop-coatac ines, hey ae in principle annular and do not form regular patterns just like ‘at, Also a colloidal suspension sa precondition fora suc- cessful “contact ine pinning” 0007] An example for manufacturing parallel wires using suelia method ean be gathered fromthe paper by Huangetal., Nov. 24, 2011 “One-Step Pateing of Aligned Nanowire Arrays by Pr- rammed Dip Cetin” (Angew. Chem. It E2007, 45, 24142817) nthe proces, vertically rene sobs is pulled fom aparicl suspension at adefinod velocity so that Particles accumulate along sraight cotct ie 1 form a Tinarstactrc, Plling ost the sabe the drying drop proaresively this the suspension fil that heres 0 the subst ands ined tothe contact in, ni deny ‘new contact line is assumed in a jump that lies deeper. As a ‘eal an arangement is produc on th subtitsof paral Ie equally paced ire whose spacing become via the pllng-ou oct [0008] Teresina disadvantage ofthis mae resides the considerable srctural wid of few micrometers. In ain, iis doubt whether inthis way even intersecting ‘res or even whole rds can be produced for example by rotting the substrate about an angle an repeating the entire procedure. since the wis that ate then already preset Could interfere withthe course ofthe weting boundary ofthe Suspension, in prtlarimpede the Fingo the cont ine. “Anyway the ator of thea that has bee ited do not Say anything on gr, eventhough ther production wing ther method positively suggest it [0009] Thepaperby Padmakareta “Inability and dew ting of exoporating tin water fins on pial nd om- pctelywetable subsets” (Chom, Phys, Yo. 10, 1735- 1744, 1999) presents an explanation for a different ‘structuring phenomenon when aqueous drops or films evapo- rte [0010] An aueous thin fm in principle has cern roughness ont sure, thatsto say the actin thickness isa netionh,0 being a pace coordinate slong the Subst andtheng the tine. The varaon of thei ike nese is tmpertredepenent al an eich the oder tgnitadeo te decrecsing mean fil thickness <>), ‘dr during the evaporation ofthe ln. Even wiout going io more detail wih respect othe theoretical iscusion of Pmakr eta, itis eal obvious that the film can tum stable inthe proces. In practic, oles ean develop inthe fi tat reach op othe ssa, andthe lim teks an assume «lngely period stare. These holes can be the Staring pins frs separation fred lm pises"and ‘thus lead to the formation of droplets (see FIG. 1 as an. ilseation). Theater the droplets evaporate separately frome ier anindspendaly nth professional word, ‘his phenomenon of spontaneous regular dseesfnkng of thin ims which cannot ony be observed with water, bat aboveall withorgani guid fms bur alsoonfguefied metal films, is known as “spinodal decrosslinking” or “spinodal deeting” A more pevse physical explanation can be founda others inthe papery Jacobs and Hennings, “Simtudung in daaen Fnen, Phystainche Blister, 551999), No. 12. {WLI} The paper by Padmakar et. shows that thee are charters ents forthe subdivision of te thatarea funetininparcularafthe velocity of theaporation. thas shows Way fo el film steturing even without he involvement ofcllardsand gives ome clus as othe contol ost parameters by mens of the empertire [0012] Even in the per hy Wess, “To Bead or Not Beat” Scence News, Vol 155, p28, 19%) reference is smd to the view th nodal decoslinkng be ube for US 2011/0287181 Al producing paters and stretures (for example from nano- particles) on substrates whose dimensions ae actualy onthe Seale of nanometer. [W013] The dissertation hy Rath, “Perodisch angcordnte ‘hotochrome Dots fie hoeichteoptisce Spee”, Unie ‘erst Strat, 2007, describes he production of quantum dots of ufo size (diameter of several 10 up tafe 100 nm) ina stetly periodic arangement by means of spinodal docrssinking. This however doesnot soseed on a fat sub- strate where only dots of diferent sizes frm in random distribution. Rath therefore employs presirectred sub- stats provided wih tenches (0014) For the prior ar, reference is fuer made to K ‘Kargupa, A, Shamus*Creaton of Ordered Patems by Dew: sting of Thi Films on Homogenovs nd Hetergenots Sub- strats", Journal of Colloid and Interface Science, Volume 245, pp. 99-115 (2002) and.A.M, Higgins and R.A, L Jones “Anisotropic spinodal deweting ws ote to selFasembly cof patterned surfices", Nat 404, pp 476-478 200), Siart- ing fom the metioned rir a, the insetion naw setts te object of specifying @ simple method for producing nanowire structures, in particular of nanogrids, where the produced suctural widths ofthe individual nancies that have been produc are inthe onder of magnitude of 100 nanometers. {001S]_ The object is achieved by @ method according to Cam The subaims specify advatageousembodineats “The principle procedure othe iveation i 8 follows [0016] The material forming the nanostructure is intro , ft) de, the averaging integral extending over a sal stroundings 2 around the pont Taventve measures have tobe taken oa ost up the ra eat V1, 1) as uniform as possible over lage surice areas ofthe subst, but at east as parallel as possible {0019} The substrate that has boon wetted by film is ‘brought as uniformly as posible tan increased temperature ‘ew the boiling pint Of the care gud o hat it evapo- ‘ats ropdly wl forming aconsdeabl surface roughness. ‘Asa esl, the film thickness docreases rapidly everywhere, ‘out oly i this part ara ofthe wetted suze witha "match. ing” film hcknessa spinodal decrossinkingandthusastrc- turing of the fm dovelops The ara of matching fim thick- est “migrates” across the subsite as the evspomtion progresses. The course ofthe structure shows ite as per pendicula othe respective local gradient of the film tick- ess Vc, [0020] When the ene carer guid has evaporated, the ‘material forming the nanostewture remains predominantly aun very selectively, as canbe seen—on those surface areas that were the lasto he wetted whea the spinodal dcrssiak- ing seis in Tho structural widths are very small and the structure run pall in paticular whew a age range with paral! filn-thickness gradients was present Nov. 24, 2011 {W2I] The sete tat have been prod ae sa: tively robust postprocessing. I asin pray been found tobe possible to proces agin substrates with sch structures sing the method described above it alo being passible to change the direction ofthe Hiahickness wad nt inthis way, reise gr sirctre canbe prado very col {0022} _\ few explanations and dete defnons follow [W023] Thespinods decrostikingof thecal thst isprovitedacondng othe invention fet a sactring the igi min principe indepen ofthe edges ofthe Tigi However. in ach pplication in practice the caer tigi willbe for example dopo the care iid is applied othe substrate) so that these ds nen the Stic In aon, an inftence ress onthe sino Sacto parlor oming the nanostvtre are eed tothe cae gud since then “cont! ine pi ning” sti, ss known, [W024] The present invention canbe apie allots suspensions, Bt lof sine soltons whee the mecha- nism of “contact line pinning” does not apply, since on evapo- ‘ation, ttre onl form o he substateit pacts no thor long-distance mail anspor io thes structs is ressble {W025} T clarify the pote ofthe inveton the exem- lary embodiment that sed ad tata the same tine Inplamenta prcered design afte inveatiog, a saline sol tion is used for producing structures. In this case the carrier Jigids water Practically any water-soluble salt can be wed forfoming the nnetrctrs, however there is reset of one no significa intrest inst anos, For this > Son, silver nitate (AgNO) i prferahy used since ti own tht silver ntte disintegrates ino mitogen oxide (N0,), oxygen en elmenl silver won rated shrmaly. ‘Theaimofthe example therefore th production of parallel silver wits and ier grids [0026] When oding the water wih silver nitrate care has tobe taken to stay clearly below the solubility Him, peer ably by a factor of 10°* to 10°, If a solution were to be prepared closet the solubility int silver nite pri fries wool be proce iret fer the water wart fo aor that do not orn themselves according tothe spin cal dserostnkng. Fon the ober nd the soon spre ered with oo weak a concentration, thn sl anowies faving the expetedstractre develop, boweverthey arene rte because ofalick of sufficient materia Inthe speci ‘exemplary embodiment, a 10°° mol silver nitrate solution is ted olbilty 127 mola 20°C: 10027] The loaded carrier liquid is dropped on a substrate thats oot been presructurel—in this sea con wafer It salredy hewn fom Rath 2007) and oni by fore thor esac tht enc stractrs that re peesent trongly infucce te sructring by spnodl decroslinking. There foreitsshownhete which inentivememrescan be vse contol twcring even on at smooth substrate {W028] The inventions explained in moe detail sing the flowing figures, in which [0029] FIG. 1 shows a schematic representation of the

    Vous aimerez peut-être aussi