Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

Chapter 2
2.1
Sketch
_______________________________________

2.2

cm

Sketch
_______________________________________

6.625 10 3 10 6.54 10
1.90 1.6 10
34

10

19

or

0.654 m
_______________________________________

2.3
Sketch
_______________________________________

2.6

2.4
From Problem 2.2, phase

2 x

(a) p

h 6.625 10 34

550 10 9
1.205 10 27 kg-m/s

= constant
Then

p 1.2045 10 27

1.32 10 3 m/s
m
9.11 10 31
or 1.32 10 5 cm/s
h 6.625 10 34
(b) p

440 10 9

2 dx
dx

0,
p

dt
dt
2
2 x
t
From Problem 2.3, phase

= constant
Then

1.506 10 27 kg-m/s

2 dx
dx

0,
p

dt
dt
2
_______________________________________

(c) Yes
_______________________________________

2.5

hc
hc

E
Gold: E 4.90 eV
4.90 1.6 10 19 J
So,
E h

2.7
(a) (i)

6.625 10 3 10 2.54 10
4.90 1.6 10
34

10

19

p 1.5057 10 27

1.65 10 3 m/s
31
m
9.11 10
or 1.65 10 5 cm/s

2 9.11 10 31 1.2 1.6 10 19

2mE

5.915 10 25 kg-m/s
5

cm

h
6.625 10 34

1.12 10 9 m
p 5.915 10 25
o

or

0.254 m
Cesium: E 1.90 eV
1.90 1.6 10 19 J
So,

or 11.2 A
(ii)
p

2 9.11 10 31 12 1.6 10 19

1.87 10

24

kg-m/s

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
_______________________________________
6.625 10 34

1.8704 10

24

3.54 10 10

2.9
E p h p

or 3.54 A
(iii)
p

2 9.11 10

31

120 1.6 10

Now

19

Ee

5.915 10 24 kg-m/s

hc
p

6.625 10 34
1.12 10 10 m
5.915 10 24

p e2
and
2m
2

h
1 h

Ee
e
2m e
Set E p E e and p 10 e

pe

or 1.12 A

Then
hc
1 h

p
2m e

1 10h

2m p

which yields
100h
p
2mc

Ep E

(b)
p

2 1.67 10

27

1.2 1.6 10

2.532 10

23

19

hc
hc
2mc 2

2mc
p 100h
100

2 9.11 10 31 3 10 8
100
1.64 10 15 J 10.25 keV

kg-m/s

34

6.625 10
2.62 10 11
2.532 10 23

_______________________________________
2.10

or 0.262 A
_______________________________________

(a)

h 6.625 10 34

85 10 10

7.794 10 26 kg-m/s

2.8

3
3
E avg kT 0.0259 0.03885 eV
2
2
Now
p avg

s
or

2mE avg

2 9.11 10 31 0.03885 1.6 10 19

or
p avg 1.064 10 25 kg-m/s

Now

or

h
6.625 10 34

6.225 10 9 m
p 1.064 10 25

or
o

62.25 A

p 7.794 10 26

8.56 10 4 m/
31
m
9.11 10
8.56 10 6 cm/s

1
1
m 2
9.11 10 31 8.56 10 4
2
2
3.33 10 21 J

eV

3.334 10 21
2.08 10 2
19
1.6 10

1
9.11 10 31 8 10 3
2
2.915 10 23 J

(b) E

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

or
eV

2.915 10 23
1.82 10 4
19
1.6 10

p m 9.11 10 31 8 10 3

7.288 10

27

-m/s

1.054 10 34
8.783 10 26 kg
10
12 10
dE
d p2

p
p
dp
dp 2m
2p
pp

p
2m
m

kg-m/s

(ii) E

h
6.625 10 35

9.09 10 8 m
p
7.288 10 27

or

909 A

Now

_______________________________________

2mE

2 9 10 31 16 1.6 10 19

2.147 10

2.11
(a)

E h

34

6.625 10
3 10
hc

10

1 10

1.99 10

15

so

24

26

9 10 31

or E

15

E 1.99 10

e
1.6 10 19
V 1.24 10 4 V 12.4 kV

2mE

kg-m/s

2.095 10 19 J

E e V V

2.1466 10 8.783 10

Now

(b)

24

2 9.11 10

31

(b) (i) p 8.783 10 26 kg-m/s

(ii)

1.99 10

6.02 10 23 kg-m/s
Then

h
6.625 10 34

1.10 10 11
23
p
6.02 10
m
or
o

0.11 A
_______________________________________

2.095 10 19
1.31 eV
1.6 10 19

15

5.06 10

2 5 10 28 16 1.6 10 19
23

kg-m/s

5.06 10 8.783 10
23

26

5 10 28

8.888 10 21 J
or E

8.888 10 21
5.55 10 2
19
1.6 10

eV
_______________________________________
2.14

1.054 10 34

1.054 10 32
2
x
10

kg-m/s

2.12

1.054 10

x
10 6

34

1.054 10 28 kg-m/s
_______________________________________
2.13
(a) (i) px

p 1.054 10 32

m
1500
36
m/s
7 10
_______________________________________
p m

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
2.15
(a)

Et

1.054 10 34
8.23 10 16
19
0.8 1.6 10

s
(b) p

1.054 10 34

x
1.5 10 10

7.03 10 25 kg-m/s
_______________________________________
2.16
(a) If 1 x, t and 2 x, t are
solutions to
Schrodinger's wave equation, then

1 x, t
1 x, t

V
x

x
,
t

1
2m
t
x 2
2

and

2
2 x , t
2 2 x, t

V x 2 x, t j
2
2m
t
x

Adding the two equations, we obtain

2 2

1 x, t 2 x, t
2m x 2

V x 1 x, t 2 x, t

1 x, t 2 x, t
t

which is Schrodinger's wave equation. So

1 x, t 2 x, t is also a solution.
(b) If 1 x, t 2 x, t were a solution
to
Schrodinger's wave equation, then we
could write

2 2

1 2 V x 1 2
2m x 2
j

1 2
t

which can be written as

2
2m

2 2

2 1
x

1 2

x x

2
1

V x 1 2 j 1
2
t
t

Dividing by 1 2 , we find

2
2m

1 2 2
1 2 1
2 1 2

2
1 x 2
1 2 x x
2 x
1 2
1 1

1 t
2 t

V x j

Since 1 is a solution, then

2 1 2 1
1 1

V x j

2
2m 1 x
1 t
Subtracting these last two equations, we have

2
2m

1 2 2
2 1 2

2
1 2 x x
2 x

1 2

2 t
Since 2 is also a solution, we have

2 1 2 2
1 2

V x j

2
2m 2 x
2 t
Subtracting these last two equations, we obtain

1 2
2
2

V x 0
2m 1 2 x
x
This equation is not necessarily valid, which
means that 1 2 is, in general, not a
solution
to Schrodinger's wave equation.
_______________________________________
2.17
3

x
dx 1
2

cos 2

x sin x

2
2

A2

3
1

3 1

1
2 2
1
so A 2
2
A2

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
ao
1
2
or A
2x
2
2

exp
a dx
_______________________________________
a

o ao

2.18
1 / 2

cos

nx dx 1

1 / 2

x sin 2nx

4 n
2

A2

1 / 2
1 / 2

2x
2 ao

exp

ao 2
ao

ao

x
2
dx
exp

ao
a o

dx 1

Function has been normalized.

(a) Now
2

2
exp
ao

ao

ao

ao

2
ao

2x

exp

ao

P 1

2a o
exp
4a o

a/4

ao 4

x
2
dx
exp

ao
a
o

(a)

dx

2
2 x
dx
cos
a
2

1
1 1 exp

ao

(b)

2.20

P 0.393
2

ao

ao
0

P 0.865

which yields

ao

2
ao

_______________________________________

or

which yields

x
dx
a o

2x
dx
exp

ao

2x
dx
a o

exp

2x

exp

ao
1 exp 2 1

ao

ao

2.19

ao 4

(c)

ao

ao 2

P 0.239

or A 2
_______________________________________

1
P 1 exp 1 exp

2

which yields

1 1
1
1 A2
2
4 4

Note that

or

A2

2 x

a 2

2x

a

4
a

sin

a

sin
2 4
2

4
a 2

2 a 1 a

4
a 8
or P 0.409

a/4

a/2

(b) P

2
2 x
cos
dx
a
a
a/4

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

2 x

a 2

2x

a

4
a

sin

4x

2 x
a

2
a 2
4

a/4

a
2

8 4

sin

2 a sin

a 4 4

1
1
1
2
0
4
8
4

(c) P

sin

4x

2 x
a

2
a 2
4

a / 2

2
2 2x
sin
dx
a
a

4x

2 x
a

2
a 2
4

sin

(a) (i) p

or

p 10 6 cm/s

2
2

7.854 10 9 m
k
8 10 8

27

kg-m/s
9.11 10
1
1
E m 2 9.11 10 31 10 4
2
2
4.555 10 23 J

or

a/2

2
2 2x
sin
dx
a
a

a/4

78.54 A

or P 0.25

8 10 12

10 4 m/s
k
8 10 8

(ii) p m 9.11 10 31 10 4

2 a sin

8
a 8

(b) P

2.22

a / 2

a/4

or P 1
_______________________________________

a / 2

sin 2
2 a sin 2 a

8
8
a 4
4

a
a

or

sin

2.21

a/4

a / 2

or P 1
_______________________________________

a/4

2
2 2x
sin
dx
a
a
a / 2

sin
2 a sin a

4
4
a 4
4

(a) P

2
2 x
cos
dx
a
a
a / 2

2 x

a 2

or P 0.25

2x

a
4

a/2

sin
2 a sin 2 a

8
8
a 4
8

a
a

a / 2

a / 2

or P 0.0908
(c) P

sin

a/2

eV

4.555 10 23
2.85 10 4
1.6 10 19

(b) (i) p

1.5 1013

10 4 m/s
k
1.5 10 9

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
or p 10 6 cm/s

2
2

4.19 10 9
k
1.5 10 9

k 4.32 10 8 5 10 4

or 41.9 A
(ii)

p 9.11 10 27 kg-m/s

E 2.85 10 4 eV
_______________________________________
2.23
(a) x, t Ae j kx t

(b) E 0.025 1.6 10 19

9.11 10

25

kg-m/s

34

6.625 10
7.27 10 10
25
9.11 10

2
8.64 10 9 m
7.272 10 10

p m 9.11 10 31 9.37 10 4

8.537 10

26

kg-m/s

h
6.625 10 34

7.76 10 9
p
8.537 10 26

8.64 10 9 10 6 8.64 10 15
rad/s
_______________________________________
2.25

2
2
k

8.097 10 8 m

7.76 10 9
1

k 8.097 10 8 9.37 10 4

or 7.586 10 13 rad/s
_______________________________________

p m 9.11 10 31 5 10 4

4.555 10 26 kg-m/s
34

h
6.625 10

1.454 10 8
p
4.555 10 26
m

n 2 1.054 10 34 2
2 n 2 2
En

2ma 2
2 9.11 10 31 75 10 10

E n n 2 1.0698 10 21 J
or

En

2.24
(a)

2.16 10 13 rad/s
p 9.11 10 31 10 6

(b)

1
m 2
2

9.11 10 31 2
2
so 9.37 10 4 m/s 9.37 10 6
cm/s
For electron traveling in x direction,
9.37 10 6 cm/s

2
2

4.32 10 8 m

1.454 10 8

n 2 1.0698 10 21
1.6 10 19

or E n n 2 6.686 10 3 eV
Then
E1 6.69 10 3 eV

E 2 2.67 10 2 eV
E 3 6.02 10 2 eV
_______________________________________
2.26
(a)

En

n 2 1.054 10 34 2
2 n 2 2

2ma 2
2 9.11 10 31 10 10 10

n 2 6.018 10 20 J

or

En
V
Then

n 2 6.018 10 20
n 2 0.3761 e
19
1.6 10

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
_______________________________________
E1 0.376 eV

E 2 1.504 eV

2.29
Schrodinger's time-independent wave
equation

E 3 3.385 eV
(b)

hc
E

E 3.385 1.504 1.6 10 19

3.01 10 19 J

34

V x 0 for

19

6.604 10 7 m
660.4 nm
or
_______________________________________
2.27

15 10

n 2 1.054 10 34

2 15 10 3 1.2 10 2

15 10 3 n 2 2.538 10 62

1.054 10
2
2 2
E1

2ma 2
2 1.66 10 27 10 14

a
a
, x
2
2

First mode solution:

1 x A1 cos k 1 x

where

2 2
E1
a
2ma 2

2 x B 2 sin k 2 x

3.3025 10 13 J
or

3.3025 10 13
E1
2.06 10 6 eV
19
1.6 10

For an electron in the same potential well:

1.054 10
2 9.11 10 10
34 2

14 2

31

6.0177 10 10 J
or

6.0177 10
1.6 10 19

x 0 at x

Second mode solution:

34 2

10

2mE
2

Boundary conditions:

k1

2.28
For a neutron and n 1 :

E1

2 x 2mE
2 x 0
x 2

or n 7.688 10
(b) E n 1 15 mJ
(c) No
_______________________________________

E1

so in this region

29

a
a
x
2
2

The solution is of the form

x A cos kx B sin kx
where

2 n 2 2
2ma 2

a
a
and x
2
2

We have

3.01 10

We know that

x 0 for x

6.625 10 3 10

(a) E n

2 x 2m
2 E V x x 0
x 2

3.76 10 9 eV

where

k2

2
4 2 2
E2
a
2ma 2

Third mode solution:

3 x A3 cos k 3 x

where

k3

3
9 2 2
E3
a
2ma 2

Fourth mode solution:

4 x B 4 sin k 4 x

where

k4

4
16 2 2
E4
a
2ma 2

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
_______________________________________
n
k z z , n z 1, 2, 3...
a
2.30
From Equation (1) above, we have
The 3-D time-independent wave equation in
k x2 k y2 k z2 k 2 0

V
x
,
y
,
z

0
cartesian coordinates for
is:

x, y , z
2

x, y , z
2

x, y , z

or

k x2 k y2 k z2 k 2

2mE
2

so that

2mE
x, y , z 0
2

E E nx n y n z

Use separation of variables, so let

x, y , z X x Y y Z z
Substituting into the wave equation, we
obtain

2 2 2
n x n 2y n z2
2
2ma

_______________________________________
2.31
(a)

2 x, y
x

2 x, y
y

2mE
x, y 0
2

Solution is of the form:

x, y A sin k x x sin k y y

YZ

We find

2 X
2Y
2Z

XZ

XY
x 2
y 2
z 2

x, y
Ak x cos k x x sin k y y
x

2 x, y

2mE
XYZ 0
2
Dividing by

XYZ and letting k 2

2mE
,
2

1 2 X
2 X
2 k x2
k x2 X 0
X x
x 2

Solution is of the form

X x A sin k x x B cos k x x

Boundary conditions: X 0 0 B 0
and X x a 0 k x

nx
a

where n x 1, 2, 3....
Similarly, let
1 2Y
1 2Z

k y2 and
2 k z2
2
Y y
Z z
Applying the boundary conditions, we find

ky

n y
a

, n y 1, 2, 3....

Ak x2 sin k x x sin k y y

x, y
Ak y sin k x x cos k y y
y

we
find
(1)
1 2 X 1 2Y 1 2 Z

k2 0
X x 2 Y y 2 Z z 2
We may set

2 x, y

Ak y2 sin k x x sin k y y
y 2
Substituting into the original equation, we
find:
(1)

k x2 k y2

2mE
0
2

From the boundary conditions,

o

A sin k x a 0 , where a 40 A
So k x

nx
, n x 1, 2, 3, ...
a
o

Also A sin k y b 0 , where b 20 A

So k y

n y
b

, n y 1, 2, 3, ...

Substituting into Eq. (1) above

2
2
n 2y 2
2 n x

E nx n y

2m a 2
b 2
(b)Energy is quantized - similar to 1-D result.
There can be more than one quantum state

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
per given energy - different than 1-D result.
2m
_______________________________________
k2
E VO
2

Term with B 2 represents incident wave and

term with A2 represents reflected wave.
Region I, x 0

2.32
(a) Derivation of energy levels exactly the
same as in the text
(b) E

2 2 2
n 2 n12
2ma 2

2 1 x
x

For n 2 2, n1 1
Then

where

3 1.054 10

34 2

2 1.67 10 27 4 10 10

2mE
2
Term involving B1 represents the
k1

6.155 10 22 J
or

2mE
1 x 0
2

1 x A1 exp jk1 x B1 exp jk1 x

(i) For a 4 A

General form of the solution is

3
2ma 2
2

6.155 10 22
3.85 10 3 eV
1.6 10 19

transmitted wave and the term involving A1

represents reflected wave: but if a particle is
transmitted into region I, it will not be
reflected so that A1 0 .
Then

1 x B1 exp jk 1 x

2 x A2 exp jk 2 x B 2 exp jk 2 x
(b)
Boundary conditions:
(1) 1 x 0 2 x 0
(ii) For a 0.5 cm

(2)

3 1.054 10 34

2 1.67 10 27 0.5 10 2

3.939 10 36 J
or

3.939 10 36
2.46 10 17 eV
1.6 10 19

_______________________________________
2.33
(a) For region II, x 0

2 2 x
x 2

2m
E VO 2 x 0
2

General form of the solution is

2 x A2 exp jk 2 x B 2 exp jk 2 x
where

1
x

x 0

2
x

x0

Applying the boundary conditions to the

solutions, we find

B1 A2 B 2

k 2 A2 k 2 B 2 k 1 B1
Combining these two equations, we find

k k
A2 2 1 B 2
k 2 k1
2k 2
B 2
B1
k 2 k1
The reflection coefficient is

A2 A2*
B 2 B 2*

k 2 k1

k 2 k1

The transmission coefficient is

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

T 1 R T

4k 1 k 2

k1 k 2 2

(b) For a 12 10 10 m
0.1
0.1
9
10
T 16
1
exp 2 4.85976 10 12 10
1.0
1.0

2 x A2 exp k 2 x
P

where

A2 A2*

2 9.11 10 31 3.5 2.8 1.6 10 19

_______________________________________

P exp 2 4.2859 10 9 15 10 10

2.36

E
E
1
T 16

VO
VO
(a) For m 0.067 m o

2.61 10 6
o

(c) For x 40 A 40 10 10 m

P exp 2 4.2859 10 9 40 10 10

k2

15

1.29 10
_______________________________________

where

k2

E
1

Vo

exp 2k 2 a

34

k 2 4.860 10 9 m

(a) For a 4 10 10 m

1.054 10
34

k 2 1.027 10 9 m 1
Then
0.2
0.2
T 16
1

0
.
8
0.8

2m V o E

1.054 10
or

or

2 9.11 10 31 1.0 0.1 1.6 10 19

exp 2k 2 a

2 m V O E

1/ 2

2 0.067 9.11 10 31 0.8 0.2 1.6 10 19

2.35

T 16

Vo

N t 4.002 10 8 electrons/cm 3
Density of incident electrons,
4.002 10 8
Ni
1.357 10 10 cm
0.0295

(b) For x 15 A 15 10 10 m

1.2 10 3 N t 1.6 10 19 1.874 10 7

P exp 2k 2 x

(a) For x 5 A 5 10 10 m

1
1
m 2
9.11 10 31 2
2
2
1.874 10 5 m/s
1.874 10 7 cm/s

1.054 10 34
k 2 4.286 10 9 m 1

exp 2 4.2859 10 9 5 10 10
0.0138

1.24 10 5
(c) J N t e , where N t is the density of
transmitted electrons.
E 0.1 eV 1.6 10 20 J

exp 2k 2 x

2m V o E

k2

0.0295

_______________________________________
2.34

0.1
0.1
9
10
T 16
1
exp 2 4.85976 10 4 10
1.0
1.0

exp 2 1.027 10 9 15 10 10
or

T 0.138
(b) For m 1.08 m o

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
2.38
Region I x 0 , V 0 ;
Region II 0 x a , V V O
Region III x a , V 0
(a) Region I:

k2 =

1/ 2

21.08 9.11 10 31 0.8 0.2 1.6 10 19

1.054 10

34

1 x A1 exp jk1 x B1 exp jk1 x

(incident)

(reflected)

or

k 2 4.124 10 9 m 1
Then
0.2
0.2
T 16
1

0.8
0.8

where

exp 2 4.124 10 9 15 10 10

k1

Region II:

or

2 x A2 exp k 2 x B 2 exp k 2 x

T 1.27 10 5
_______________________________________

where

where

E
1

Vo

exp 2k 2 a

3 x A3 exp jk 1 x B3 exp jk 1 x

2 1.67 10 27 12 1 10 6 1.6 10 19
1.054 10
7.274 10
(a)

14

34

1
1
14
14
T 16
1
exp 2 7.274 10 10
12
12
1.222 exp 14.548
5.875 10 7
(b)
T 10 5.875 10 7

2 7.274 10

A1 B1 A2 B 2

d 1 d 2

dx
dx
jk 1 A1 jk 1 B1 k 2 A2 k 2 B 2
At x a : 2 3

1.222 exp 2 7.274 10 14 a

14

(b)
In Region III, the B3 term represents a
reflected wave. However, once a particle
is transmitted into Region III, there will
not be a reflected wave so that B3 0 .
(c) Boundary conditions:
At x 0 : 1 2

Region III:

2m V o E

k2

2 m V O E

k2

2.37

T 16

Vo

2mE
2

1.222

a ln

6
5.875 10

or a 0.842 10 14 m
_______________________________________

A2 exp k 2 a B 2 exp k 2 a
A3 exp jk 1 a
d 2
dx

d 3

dx

k 2 A2 exp k 2 a k 2 B 2 exp k 2 a

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

jk 1 A3 exp jk 1 a

A1 A1*

The transmission coefficient is defined as

A3 A3*

k 12 exp 2k 2 a

2
2

k 2 , we find

so from the boundary conditions, we want

to solve for A3 in terms of A1 .
Solving
for A1 in terms of A3 , we find

4k 1 k 2

Substituting the expressions for k 1 and

A1 A1*

jA3
A1
4k 1 k 2

A3 A3*

2
2

2
1

k12 k 22
and

2mVO E 2mE
2
2

k12 k 22

exp k a exp k a
2

2mVO

2m

2m

2 jk1 k 2 exp k 2 a exp k 2 a

exp jk 1 a

We then find

VO E E

VO

A1 A
*
1

A3 A3*

4k 1 k 2

2
2

k 12 exp k 2 a
exp k 2 a

4k k exp k 2 a exp k 2 a
2 2
1 2

We have

k2

2mVO
A3 A
2

4k12 k 22 exp k 2 a

2
2

exp 2k 2 a

2m 2

E
E
16 2 VO 1
VO

16

VO

E
VO

exp 2k 2 a

A3 A3*

*
1

16

A1 A
VO

2 1 x

We can then write

E
VO

exp 2k 2 a

2.39
Region I: V 0

exp k 2 a exp k 2 a
A3 A3*

_____________________________________

which becomes

A3 A3*

2 m V O E

4k 1 k 2

Finally,

If we assume that VO E , then k 2 a

will
be large so that

A1 A1*

E
VO

Then
*
3

A1 A1*

k 12 exp k 2 a

x
2

2mE
1 x 0
2

1 x A1 exp jk1 x B1 exp jk1 x

incident
where

reflected

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

2 3

x
x

2mE
2
Region II: V V1
k1

2 2 x
x 2

2m E V1
2

2 x 0

2 x A2 exp jk 2 x B 2 exp jk 2 x
transmitted
where

k2

reflected

2m E V1

Region III: V V 2

2 3 x

2 m E V 2

3 x 0
x 2
2
3 x A3 exp jk 3 x

k 2 A2 exp jk 2 a k 2 B 2 exp jk 2 a
k 3 A3 exp jk 3 a
But k 2 a 2n

exp jk 2 a exp jk 2 a 1

Then, eliminating B1 , A2 , B 2 from the

boundary condition equations, we find

k3
4k 1 k 3
4k12
T

k1 k1 k 3 2 k1 k 3 2
_______________________________________
2.40
(a) Region I: Since VO E , we can write

2 1 x

transmitted
where

k3

2 m E V 2

3 A3 A3* k 3 A3 A3*

1 A1 A1* k 1 A1 A1*

From the boundary conditions, solve for A3

in terms of A1 . The boundary conditions
are:
At x 0 : 1 2

A1 B1 A2 B 2

1 2

x
x
k 1 A1 k 1 B1 k 2 A2 k 2 B 2
At x a : 2 3

A2 exp jk 2 a B 2 exp jk 2 a

A3 exp jk 3 a

2 m V O E
2

1 x 0

Region II: V 0 , so

2 2 x

There is no reflected wave in Region III.

The transmission coefficient is defined as:

2mE
2 x 0
2

Region III: V 3 0
The general solutions can be written,
keeping in mind that 1 must remain
finite for x 0 , as

1 x B1 exp k1 x

2 x A2 sin k 2 x B 2 cos k 2 x
3 x 0

where

k1
k2

2m V O E
2

and

2mE
2

(b) Boundary conditions

At x 0 : 1 2 B1 B 2

1 2

k1 B1 k 2 A2
x
x
At x a : 2 3

A2 sin k 2 a B 2 cos k 2 a 0

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
or

mo e

B 2 A2 tan k 2 a

(c)

k
k1 B1 k 2 A2 A2 1
k2

B1

and since B1 B 2 , then

k
A2 1
k2

B2

4o 2 n

From B 2 A2 tan k 2 a , we can write

4 8.85 10

or

E
tan
VO E

2mE
a
2

34 2

13.58
(eV)
n2
n 1 E1 13.58 eV
n 2 E 2 3.395 eV
n 3 E 3 1.51 eV
n 4 E 4 0.849 eV
_______________________________________
2.42
We have
1

ao

3/2

100

ao

exp

and
*
P 4 r 2 100 100

This last equation is valid only for specific

values of the total energy E . The energy
levels are quantized.
_______________________________________

1
4 r

1

ao

2r

exp

ao

or

2.41

En

mo e

4o 2 n

2 22

P
(J)

n2

En

k
1 1 tan k 2 a
k2
2mE
a
2

12

or

or

V E
1 O
tan
E

21.054 10

9.11 10 31 1.6 10 19

k
B 2 1 B 2 tan k 2 a
k2

This equation can be written as

(eV)

2 22

ao

2r

r 2 exp

ao

To find the maximum probability

dP r
0
dr

ao

2r

2r exp

ao
which gives

2 2
2r
r exp

a
a o
o

Semiconductor Physics and Devices: Basic Principles, 4th edition

Chapter 2
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
r
0
1 r ao
3/ 2
1 1
r
ao

exp

a
or r a o is the radius that gives the greatest
ao
o
where
probability.
_______________________________________

oem
E E1 2 2 2
4o 2 2 oam o
4 2

2.43

100 is independent of and , so the

wave
equation in spherical coordinates reduces to

1 2 2m o
r
2 E V r 0
r
r 2 r

Then the above equation becomes

where

4 o r m o a o r

V r

1

ao

For

100

1 1

ao

3/2

exp

ao

Then

100
1 1

r
ao

3/ 2

1
r

a exp a
o
o

so

100
1 1

r
ao
We then obtain

5/2

2 100
r
r
r

r 2 exp

ao

1 1

ao

5/2

r r2
r

exp

2r exp
a
a
a
o o
o

Substituting into the wave equation, we have

1
ao

1
r2

5/2

r r2
r

exp
2r exp

ao ao
o

2m o
2

mo ao r

3/ 2

exp

ao

1
2
r a o

2m o

2
2

2m a
m o a o r
o o

r2

ao

2r

or

1

ao

3/2

r

exp

a o

2
1 1
2
2 2
a o r a o a o a o r

which gives 0 = 0 and shows that 100 is

indeed a solution to the wave equation.
_______________________________________
2.44
All elements are from the Group I column of
the periodic table. All have one valence
electron in the outer shell.
_______________________________________