MSE303A: Electronic and Magnetic Properties of Materials

2014-15 First Semester

Quiz 4 Solution
Time: 15 minutes
Total Marks: 10

Name:
Roll No.:

(3 points) Si is doped with 1017 /cm3 donors and 1014 /cm3 acceptors. Plot (schematically, with proper
labels and values) log of hole concentration (natural log) vs. 1/T graph. Also show slopes in the plot and
any calculations.
Answer: In Intrinsic region
1.

= ! = ! =

! ! exp

!!
!!! !

In extrinsic region
= !! , = ! ! (constant)
!! !!

=!

! !!!

exp

!!

!! !

2.
(2 points) Write defect reaction for Frenkel defect formation in an ionic metal oxide M2O.
Answer:
2! + ! 2!! + 2! + !
2! + ! ! + !!! + 2!
3.

(5 points) Show that for oxygen-deficient non-stoichiometric ionic oxide (MO), electron concentration is
proportional to partial pressure of oxygen as
!
! !!!
!
for both oxygen-deficient and metal-excess cases.
Answer:
For oxygen-deficient non-stoichiometric oxide
! ! + !!! +2 !
Reaction rate constant = ! !! !!! !
Charge neutrality ! = 2 !
or ! = 2

! ! !! !
!!

Similarly for metal-excess non-stoichiometric oxide

! + ! ! + !!! +2 !
Reaction rate constant = ! !! !!! !
Charge neutrality ! = 2 !
or ! = 2

! ! !! !
!!