PD- 93818

IRGP30B120KD-E
Motor Control Co-Pack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE
C

Features

VCES = 1200V

Low VCE(on) Non Punch Through (NPT)

Technology
Low Diode VF (1.76V Typical @ 25A & 25C)
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10 s Short Circuit Capability
Square RBSOA
Ultrasoft Diode Recovery Characteristics
Positive VCE(on) Temperature Coefficient
Extended Lead TO-247AD Package

VCE(on) typ. = 2.28V

VGE = 15V, IC = 25A, 25C

N-channel

Benefits
Benchmark Efficiency for Motor Control
Applications
Rugged Transient Performance
Low EMI
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation
Longer leads for Easier Mounting

TO-247AD

Absolute Maximum Ratings

Parameter
VCES
IC @ TC = 25C
IC @ TC = 100C
ICM
ILM
IF @ TC = 100C
IFM
VGE
PD @ TC = 25C
PD @ TC = 100C
TJ
TSTG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.

Max.

Units

1200
60
30
120
120
30
120
20
300
120
-55 to + 150

V
W

C
300, (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RJC
RCS
RJA
Wt
ZJC

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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case

Min.

Typ.

Max.

0.24

6 (0.21)

0.42
0.83

40

Units
C/W

g (oz)

(Fig.24)

12/14/99

IRGP30B120KD-E
Electrical C haracteristics @ TJ = 25C (unless otherw ise specified)
P a ra m e te r
V (B R )C E S

C o lle cto r-to -E m itte r B re a kd o wn V o lta g e

M in.
1200

V (B R )C E S / T j T em p e ra tu re C o e ff. o f B re a kd o wn V o lta g e

C o lle cto r-to -E m itte r S atura tio n

V C E (on )

V G E (th )
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V o lta g e

G a te T h resho ld V o lta g e

V G E (th ) / T j

T em p e ra tu re C o e ff. o f T h resh o ld V o lta g e

g fe

F orwa rd T ran sc o nd u c ta nc e

IC E S

Z ero G ate V oltag e C o lle ctor C u rre nt

V FM

IG E S

4 .0
1 4 .8

T yp .
+ 1 .2
2 .2 8
2 .4 6
3 .4 3
2 .7 4
2 .9 8
5 .0
- 1 .2
1 6 .9
325
1 .7 6
1 .8 6
1 .8 7
2 .0 1

D io d e F o rw a rd V o lta g e D ro p

G a te -to -E m itte r L ea k a ge C u rre n t

M ax . U nits
V
V /C
2 .4 8
2 .6 6
4 .0 0
V
3 .1 0
3 .3 5
6 .0
V

C o nd itio ns

F ig .

V G E = 0 V ,I c = 2 5 0 A
V G E = 0 V , I c = 1 m A ( 2 5 -1 2 5 o C )
IC = 2 5 A , V G E = 1 5 V

5, 6

IC = 3 0 A , V G E = 1 5 V

7, 9

IC = 6 0 A , V G E = 1 5 V

10

I C = 2 5 A , V G E = 1 5 V , T J = 1 2 5 C

11

I C = 3 0 A , V G E = 1 5 V , T J = 1 2 5 C
V C E = V G E , IC = 2 5 0 A

9,1 0,1 1,12

o
m V / C V C E = V G E , I C = 1 m A ( 2 5 -1 2 5 C )

1 9 .0
250
675
2000
2 .0 6
2 .1 7
2 .1 8
2 .4 0
1 0 0

V C E = 5 0 V , IC = 2 5 A , P W = 8 0 s
V G E = 0 V ,V C E = 1 2 0 0 V

V G E = 0 v , V C E = 1 2 0 0 V , T J = 1 2 5 C
V G E = 0 v , V C E = 1 2 0 0 V , T J = 1 5 0 C
IC = 2 5 A

IC = 3 0 A

I C = 2 5 A , T J = 1 2 5 C
I C = 3 0 A , T J = 1 2 5 C

nA

V G E = 2 0 V

Sw itching C haracteristics @ T J = 25C (unless otherw ise specified)

P a ra m e te r

T urn -O ff S witc h ing L o ss

T yp .
169
19
82
1066
1493

M ax . U nits
254
29
nC
123
1250
1800
J

E tot

T otal S w itc h ing L o ss

2559

3050

E on

T urn -o n S witc h in g Lo ss

E off

T urn -o ff S w itc h ing L o ss

1660
2118

1856
2580

Qg

T otal G a te ch a rg e (turn -o n )

Q ge

G a te - E m itte r C h arg e (tu rn -on )

Q gc

G a te - C o lle c to r C h a rg e (tu rn -o n )

E on

T urn -O n S witc h in g Lo ss

E off

M in.

C o nd itio ns

F ig .

IC = 2 5 A

23

V CC = 6 0 0 V

CT 1

V GE = 15 V
IC = 2 5 A , V C C = 6 0 0 V

CT 4

V G E = 1 5 V , R g = 5 , L=200H

WF1

T J = 2 5 C , E n e rg y lo sse s in clu d e ta il
a n d dio d e rev e rse re co v e ry

Ic = 2 5 A , V C C = 6 0 0 V

WF2
13 , 15

V G E = 1 5 V , R g = 5 , L=200H

CT 4

E tot

T otal S w itc h ing L o ss

3778

4436

td (o n )

T urn - o n d e la y tim e

tr

R ise tim e

td (o ff)

T urn - o ff d e la y tim e

tf

F all tim e

65
35
230
75

C ies

In p u t C a p a cita n c e

C oes

O u tp ut C a p ac ita n ce

C res

R e v erse T ra n sfe r C a pa c ita n ce

50
25
210
60
2200
210
85

T J = 1 2 5 C , E n e rg y lo sse s in clu d e ta il
a n d dio d e rev e rse re co v e ry

Ic = 2 5 A , V C C = 6 0 0 V

ns

14 , 16

V G E = 1 5 V , R g = 5 , L=200H

CT 4

T J = 1 2 5 oC ,

WF1
WF2

V GE = 0V

pF

V CC = 3 0 V

22

f = 1 .0 M H z
o

RBSOA

R e v erse b ia s sa fe o p e ra tin g a re a

WF1 & 2

T J = 1 5 0 C , Ic = 1 2 0 A
V CC = 1 0 0 0 V , V P = 1 2 0 0 V

F U LL SQ U AR E

4
CT 2

R g = 5 , V G E = + 1 5 V to 0 V
o

SCSO A

S h ort C ircu it S a fe O p era tin g A re a

E rec

R e v erse re c o v e ry e n e rg y o f th e d io de

trr

D io d e R ev e rse re co v e ry tim e

Irr

P e ak R e v e rse R e c ov e ry C u rre n t

Le

In te rn a l E m itte r In du c ta n ce

10

----

----

1820
300
34
13

2400

J
ns
A
nH

TJ = 150 C
V C C = 9 0 0 V ,V P = 1 2 0 0 V

CT 3
WF4

R g = 5 , V G E = + 1 5 V to 0 V

38

T J = 1 2 5 oC
V C C = 6 0 0 V , Ic = 2 5 A

17 ,18 ,19
20 , 21

V G E = 1 5 V , R g = 5 , L=200H

CT 4, WF3

M e a sure d 5 m m from th e p a ck a g e .

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IRGP30B120KD-E
Fig.1 - Maximum DC Collector
Current vs. Case Temperature

Fig.2 - Power Dissipation vs. Case

Temperature

70

320

60

280
240

50

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(W)
tot

30

160

(A)

200

40

120

20
80

10

40

40

80

120

160

40

80

120

160

T C (C)

T C (C)

Fig.3 - Forward SOA

T C =25C; Tj < 150C

Fig.4 - Reverse Bias SOA

Tj = 150C, V GE = 15V

1000

1000
PULSED
2s

100
10 s

100
(A)

10

1ms

(A)

100s

10
1

10ms

DC

0.1

1
1

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10

100
V CE (V)

1000

10000

10

100
V CE (V)

1000

10000

IRGP30B120KD-E
Fig.6 - Typical IGBT Output
Characteristics
Tj=25C; tp=300s

Fig.5 - Typical IGBT Output

Characteristics
Tj= -40C; tp=300s
60

60

V GE = 18V
V GE = 15V
V GE = 12V

55

45

V GE = 15V
V GE = 12V
V GE = 10V

40

40

V GE = 8V

35

35

50

(A)

25

30

30

(A)

50

V GE = 10V
V GE = 8V

45
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V GE = 18V

55

25

20

20

15

15

10

10

3
4
V CE (V)

Fig.7 - Typical IGBT Output

Characteristics
Tj=125C; tp=300s
60
V GE
V GE
V GE
V GE
V GE

50
45

50

40
(A)

30

35
30

25

45

35

25

20

20

15

15

10

10

3
4
V CE (V)

- 40C
25C
125C

55

(A)

40

= 18V
= 15V
= 12V
= 10V
= 8V

Fig.8 - Typical Diode Forward

Characteristic
tp=300s

60

55

3
4
V CE (V)

2
V F (V)

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IRGP30B120KD-E
Fig.10 - Typical V CE vs V GE
Tj= 25C

Fig.9 - Typical V CE vs V GE
Tj= -40C

18

18

16

16

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14

12

12

CE

10

V CE ( V )

20

(V)

20

I CE =10A
I CE =25A
I CE =50A

10

I CE =10A
I CE =25A
I CE =50A

0
6

10

12

14

16

18

20

V GE (V)

12 14
V GE (V)

16

18

20

18

225

16

200

14

175

12

150

Tj=25C
Tj=125C

(A)

250

125

I CE =10A
I CE =25A
I CE =50A

V CE ( V )

20

10

Fig.12 - Typ. Transfer Characteristics

V CE =20V; tp=20s

Fig.11 - Typical V CE vs V GE
Tj= 125C

10

100

75

50

25

Tj=125C
Tj=25C

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10

12 14
V GE (V)

16

18

20

8
12
V GE (V)

16

20

IRGP30B120KD-E
Fig.13 - Typical Energy Loss vs Ic
Tj=125C; L=200H; V CE =600V;
Rg=22 ; V GE =15V

Fig.14 - Typical Switching Time vs Ic

Tj=125C; L=200H; V CE =600V;
Rg=22 ;V GE =15V

8000

1000

Eon

7000

tdoff

6000

Eoff

5000
t (nS)

Energy (J)

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4000

tf
tr

100

3000

tdon

2000
1000
0

10

10

20

30

40

50

60

10

30

50

60

Fig.16 - Typical Switching Time vs Rg

Tj=125C; L=200H; V CE =600V;
I CE =25A; V GE =15V
1000

Eon

3300

40

I C (A)

I C (A)
Fig.15 - Typical Energy Loss vs Rg
Tj=125C; L=200H; V CE =600V;
I CE =25A; V GE =15V
3500

20

tdoff

3100

2700

Eoff

2500

t (nS)

Energy (uJ)

2900

tdon

100

2300

tr
tf

2100
1900
1700
1500

10
0

5 10 15 20 25 30 35 40 45 50 55

Rg (ohms)

10 15 20 25 30 35 40 45 50 55

Rg (ohms)

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IRGP30B120KD-E
Fig.18 - Typical Diode I RR vs Rg
Tj=125C; I F =25A

Fig.17 - Typical Diode I RR vs I F

Tj=125C

45

40

40

35

35

Rg=5

IRR ( A )

30

25

30

IRR ( A )

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45

Rg=10

20

Rg=22

20
15

15

Rg=51

10

25

10
5

0
0

10

20

30

I F (A)

40

50

Fig.19 - Typical Diode I RR vs dI F /dt

V CC =600V; V GE =15V
I F =25A; Tj=125C

45

60

10 15 20 25 30 35 40 45 50 55

Rg (ohms)

Fig.20 - Typical Diode Q RR

V CC =600V; V GE =15V; Tj=125C
7000

40

6500

Rg=5

35

22
51

6000

30

10

40A
30A

QRR ( n C )

(A)

5500

25

5000

RR

Rg=10

25A

4500

20
Rg=22

15
10

3500

3000

2500

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500
1000
dI F / dt (A/s)

20A

4000

Rg=51

5
50A

1500

500

1000

1500

dI F / dt (A/s)

IRGP30B120KD-E
Fig.21 - Typ. Diode E rec vs. I F
Tj=125C
2400
5

2200

10
22

2000
51

Energy (uJ)

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1800

1600

1400

1200

1000

800
0

10

20

30

I F (A)

40

50

60

Fig.23 - Typ. Gate Charge vs. V GE

I C =25A; L=600H

Fig.22 - Typical Capacitance vs V CE

V GE =0V; f=1MHz
16

10000

600V

14

C ies
800V

1000

10

V GE ( V )

CapacItance (pF)

12

C oes

8
6

100

res

2
0

10
0

20

40

60

V CE (V)

80

100

40

80

120

160

200

Q G , Total Gate Charge (nC)

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IRGP30B120KD-E
Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case

10

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D =0.5
0.2
0.1

0.1
0.05

P DM
0.02

t1
0.01

0.01

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C

SINGLE
PULSE

0.001
0.00001

0.00010

0.00100

0.01000

0.10000

1.00000

10.00000

t 1 , Rectangular Pulse Duration (sec)

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IRGP30B120KD-E
Fig. CT.1 - Gate Charge Circuit (turn-off)

Fig. CT.2 - RBSOA Circuit

L

L
VCC

DUT

80 V

DUT
1000V

0
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Rg

1K

Fig. CT.4 - Switching Loss Circuit

Fig. CT.3 - S.C. SOA Circuit

d iod e cla m p /
DUT

D riv er
D
C

900V

- 5V
DUT /
D R IV E R

DUT

VCC

Rg

Fig. CT.5 - Resistive Load Circuit

R =

DUT

VCC
IC M

VCC

Rg

10

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IRGP30B120KD-E
Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125C using Fig. CT.4

Fig. WF.2 - Typ. Turn-on Loss Waveform

@ Tj=125C using Fig. CT.4

800

40

900

45

700

35

800

40

600

30

700

35
TEST CURRENT

90% ICE
25

400

20

600

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30

300

15

V CE ( V )

tf

I CE ( A )

V CE ( V )

500

25
90% test current

400

20
tr

300
200

15
10% test current

10
5% VCE

ICE ( A )

500

200

10
5% VCE

100

5% ICE

100

0
Eon Loss

Eoff Loss
-100
-0.5

-5
0.0

0.5

1.0

1.5

2.0

2.5

-100

-5
4.0

4.1

4.2

t I me (s)

4.3

4.4

4.5

t I me (s)

Fig. WF.3 - Typ. Diode Recovery Waveform

@ Tj=125C using Fig. CT.4

Fig. WF.4 - Typ. S.C. Waveform

@ TC=150C using Fig. CT.3

30

1200

250

20

1000

200

-400

10

800

150

-600

600

100

-10

400

50

-20

200

-30

-200
QRR

10%
Peak
IRR

-800

ICE ( A )

V CE ( V )

I C E( A )

V CE( V )

tRR

Peak
IRR
-1000

-1200
-0.5

0.0

0.5
t I me (S)

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1.0

-50
-10

10

20

30

t i me (s)

11

IRGP30B120KD-E
TO-247AD Case Outline and Dimensions
. :

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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
12/99

12

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