INTRODUCTION TO POWFK ELECTRONICS BY Drs.AM ALL ‘What is power electronics? ‘There are three main areas of concern in "Hlectrical Engineering” (1) POWER: This involves generation, Transmission, Distribution and utilisation of electrical energy and rotating machines. (2) ELECTRONICS: This deals basically with semiconductor devices and circuits at lower level of voltage and current (3) CONTROL: This deals with the stshility and response of open and closed loop systems. Now, power electronics deals with the use of electronics for the the control of large powerINTRODUCTION TO POLER ELECTRONICS a Nhat 4s power electronics? stat ie equipment Power —— Peat ing eu tpment sievices ower electrenicsifselectronies of Uavices continuous tro) — lS eanpled data Types of solid state switches: diodes thyristors or Sok power transistors gate controled switches triacs diacs Power MOSFET Conmitat ion ~ current interruption or transfer to an alternate path: natural or 1ine conmutat ion - natural change'in ac Tine - self ox forced commutation - isherent or artifical turn-off abitity. oad comutation - inherent or artifical turn-off produced by oad characteristicsWHY POWER ELECTRONICS IS IMPORTANT? Industrial Productivity and Product - Quality Improvements Energy Conservation - More efficient use of electricity Solving Urban Pollution Problem Environmentally Clean Sources of ,Power - Photovoltaic, Fuel Cell, Wind Power World Gree House EffectPOWER, ELECTRONICS! SYSTEMS DC AND AC REGULATED POWER SUPPLIES ELECTRO CHEMICAL PROCESSES HEATING AND LIGHTING CONTROL ELECTRONIC WELDING POWER “INE VAR AND HARMONIC COMPENSATION HIGH VOLTAGE DC SYSTEM PHOTO VOLTAIC AND FUEL CELL CONVERSION VARIABLE SPEED CONSTANT FREQUENCY SYSTEM SOLID STATE CIRCUIT BREAKER INDUCTION HEATING MOTOR DRIVESAGHUSPACE-MILITARY ‘ w POWER SEMICONDUCTOR DEVICE EVOLUTION +. DIODE * THYRISTOR * TRIAC * GATE TURN-OFF THYRISTOR (@TO) * BIPOLAR JUNCTION TRANSISTOR (BJT) * POWER MOSFET + INSULATED GATE BIPOLAR TRANSISTOR (IGBT) * STATIC INDUCTION TRANSISTOR (SIT) * STATIC INDUCTION THYRISTOR (SITH) * MOS-CONTROLLED THYRISTOR (MCT)Device ;] Simbol | Maximum Capabilities Volts | amp. | Speed Silicon rectifier ~/ | 5000 | 7500 | (us) SCR _| Silicon-controtled rectifier @ 5090 | 3000 | 1 TRIAC | _ Bidirectional switch 1000 | 2000 | 1 GTO Gate Turn-off SCR & 400 02 Gcs Gate controlled switch G 1000 | 200 | 2 Power transistor oh 3000 | 500 | 02 Darlington ) 1000 | 200 | Zener diode @ 500 100* SCR (sicon-costeolled ete)” SCS (ileon-eoe- ‘role switch) taser chase esc) oa Z 3a) Ee) Veg ees) 0 ign 1. Tete a sith Ono af sttes (8) Type safe operating srs.ReWG cect FIG IE He Hounrsy owFieM : WAVEFONMS OF GATE VOLTAGE AND (CURNEMT: om 3) (o> ‘Dy te) GATE CATHODE VOLTAGE TOTML GNTE CURRENT ‘TuMN-om Pune BACK FoncH CunvENT ‘TOR-OPF PULSE (EXPANDED) 3-1GBT FEATURES *~ HYBRID MOS-GATED BJT « ADVANTAGES OF MOS GATE + HIGHER POWER - ASYMMETRIC BLOCKING (S00V, 400A) ¢ NO THYRISTOR-LIKE LATCHING PROBLEM + CURRENT GENSITY HIGHER THAN BJT AND MOSFET (36% BIE SIZE) «© LOWER Cigg THAN MOSFET + IMPROVED MILLER FEEDBACK EFFECT * SOA 18 LIMITED BY T; + POPULARITY IN MEDIUM POWER AC DRIVESPe EQUIVALENT CIRCUIT AND DEVICE SYMBOL (a) Equivalent ‘Circuit (b) Device Symbol1 (©) gute (© Simpitied ‘See ‘creat FIGURE 4.29 (Coss section and ret fos IGBTS closer to that of a BJT than an MOSFET. This is due to the p* substrate, which ist ‘sponsible for the minority carrier injection into the n-region. The equivalent circt is shown in Figure 4.29, which can be simplified to Figure 4.29c. An [GBT is mat of four alternate PNPN layers, and could latch like a thyristor given the necessacondition: (cape + pnp) > 1- The n*butfer layer and the wide epi base r¢ gain of the NPN-terminal by internal design, thereby avoiding latching. 1G wo structures of IGBTs: punch-through (PT) and nonpunch through (NP PT IGBT structure, the switching time is reduced by use of a heavily dopec layer in the drift region near the collector. In he NPT structure, carrier lifetit ‘more than that of a PT structure, which causes conductivity modulation of th gion and reduces the on-state voltage drop. An IGBT is a voltage-controll Similar to a power MOSFET. Like an MOSFET, when the gate is made pos respect to the emitter for turn-on, carriers are drawn into the p-channel nea region; this results in a forward bias of the base of the mpr-transistor, whic tums on. An IGBT is tumed on by just applying a positive gate voltage to ‘channel for n cartiess and is turned off by removing the gate voltage to close nek It requires a very simple driver cireut.Ithas lower switching and conduc hile sharing mamy af the appealing features of power MOSFETS, such as ¢¢ Unive, peak current, capability and ruggedness. An IGBT is inherently faster t However, the switching spood of }GBTsis inferior to that of MOSFETS “The symibol awd cit of an IGBT switch are shown in Figure 430. terminals: ane. gate, callenton, and emitter instead of gate, drain, and sour MOSFET. The typical output characteristics of ic versus cg are shown in Figur ‘various gate-emilies voltage %o,. The typical transfer characteristic of fc vet FIGURE 430 ‘Sip ned crit for an 7 26 : g z iz #71 at 8 3 4 é, & ot ‘eo pbte tbe . foe aterm vas Ge cniter vane FIGURE 4.31 “Tuiealcninat and transfer characteristics of IGBTsay +3y, JU Low sive HALF-BRIDGE IGBT INVERTER USING IR2110 DRIVER [16] ilo 47 Eid-t4- av oosv ‘hum Teco ‘or Temp, probe“ae vale 3 who, m2 38) soflue vd bsngizsb zollosnoo otava-lmgota to rngalb oitnmedCATHODE ea aK ANODE BASIC STRUCTURE OF SITH AND DEVICE SYMBOL (a) Basic Structure of SITH (b) Device Symbo!SIT FEATURES High Frequency High Power Vacuum Triode - Like Device (1500V, 180A - Tokin) Normally On Device - Asymmetric Blocking Large Conduction Drop (90V at 180A) Switching Speed Faster Than MOSFET (toyt 0-3848, toe * 0.888) Lower Gate-to-Source Capacitance And Resistance SOA Limited By Tj Easy Paralleling Of Devices Not Good. For General PE ApplicationsSOURCE ¢ PASSIVATION D LAVER BASIC STRUCTURE OF SIT AND DEVICE SYMBOL (a) Basic Structure of SIT (b) Device Symbol y err FEATIIRESSITH FEATURES Self-Controlled GTO-Like High Power Device (1200V, 800A -: Toyo Denki) Normally On Device . - Asymmetric Blocking Poor Turn-Off Current Gain (1 to 8) Higher Than GTO Conduction Drop (4.0V) Higher Than- GTO Switching Frequency ton t2.0 4S, togg*9.0 48) Y and di Ratings Higher Than GTO (2,000 V/ 48, 900A/ 4S) Improved SOA ~- Tj LimitedVaz CATHODE. Loap >in ANODE GATE catrooe YS FIT Va frye cela =eiaxo | ANODE Low ON AND OFF CONDITIONS OF BASIC SITH (a) ON Condition, (b) OFF Condition GATE > DePLetion LAYERMCT FEATURES Thyristor-Like High Power Device But Turned On And Off By MOS Gate (1000V, 100A) MOS Gate Advantages Low Conduction Drop - Asymmetric. Blocking (1.2v) Switching Speed Comparable with 1@BT (ton 20.2 MS, togen2.5 48) SOA is Tj Limited CIN Is Fixed ~ No Miller Effect Easy Paralleling Of Devices Large Potentiality In Next Generation Power Electronics Commercially Not Yet AvailableOXIDE [fg GaTEo— POLYSILICON P(o-FeT| SOURCE) 4 (PNP- BASE, OFF-FET DRAIN) (OFF-FET CHANNELS): |_ON-FET CHANNEL, |_P (ON-FET ‘SOURCE) vel re (MPH BASE, O8-FET Druin) P BUFFER vai NY SUBSTRATE CATHODE, BASIC STRUCTURE OF MCT 24A Clow wed ww p-FET \, MCT EQUIVALENT CIRCUIT AND DEVICE SYMBOL (a) Equivalent Circuit (b) Device symbot