g SET B
EEE 8 Second Exam 1" Semester 2009-10 August 17, 2009 7-9AM
Instructions: Start each problem on a new page. Do not write anything at the back of
your papers. Anything written at the back of. your answer sheets will be considered
scratch, Write your solutions completely, legibly and clearly. indicate all assumptions.
BOX all final answers. Whenever plots are required, include all important tick-marks and
labels. Anyone caught cheating will have a date with the Student Disciplinary Tribunal.
Part |. [30 pts] On your answer sheets, write T if the statement is correct and F if itis
incorrect. ERASURES ARE NOT ALLOWED so be sure of your answer before writing
them on your answer sheet.
XE __ 1. Conduetivity of intrinsic semiconductors decreases as temperature increases.
T 2. Aboleis created whenan electron jumps from the valence band to the
conduction band.
F 3. Doping an intrinsic semiconductor with Boron produces an n-lype semiconductor.
4, N-type semiconductors have electrons as the majority charge carriers.
5, Adiode's depletion region is present even when no bias is applied to the diode.
6. A forward-biased diode has a non-existent depletion region.
7, Reverse biasing a diode reduces the width of the depletion region.
8. A forward-biased diode has a more positive voltage at the n-type semiconductor
than the p-type semiconductor.
e yt 8. A P-type semiconductor has an overall net positive charge due to the presence
of additional holes.
‘T- 10. Operating a bipolar junction transistor in the active region requires the emitter-
base junction to be reverse-biased ‘and.the collector-base junction to be forward
biased.
aim 44.For JFETs, making Ves more negative reduces the current through the channel.
tT 42. For JFETs, increasing Vos has no effect on current when Ves