Part Number System Change Notice

Effective from August 6, 2007, a more concise part numbering system is utilized by

Hynix with the intention of managing product line with more consistency.

Devices developed after August 2007 and their respective products will be Refer to

the following pages for more details. (www.hynix.com/pn_notice.jsp)

Part Number with prefix ‘HY’ -> Old Part Number Decoder Link

Part Number with prefix ‘H’ -> New Part Number Decoder Link
‘H’ Part Number Last Updated: Dec. 2007

NAND Flash PART NUMBERING

H 2 7 X X X X X X X X X - X X
(1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15)

(15) OPERATION
(1) HYNIX TEMPERATURE

C : Commercial (0℃~70℃)
(2) PRODUCT FAMILY E : Extended (-25℃~85℃)
M : Mobile (-30℃~85℃)
2 : Flash
I : Industrial (-40℃~85℃)
(3) PRODUCT MODE
(14) BAD BLOCK
7 : NAND Flash
B : Included Bad Block
(4) POWER SUPPLY(VCC) S : 1~5 Bad Block Included
P : All Good Block
U : 2.7V~3.6V
L : 2.7V (13) - d
S : 1.8V
“-”
(5), (6) DENSITY
(12) PACKAGE MATERIAL
64 : 64Mb 12 : 128Mb
25 : 256Mb 51 : 512Mb A : Wafer
1G : 1Gb 2G : 2Gb P : Lead Free
4G : 4Gb 8G : 8Gb L : Leaded
AG : 16Gb BG : 32Gb R : Lead & Halogen Free
CG : 64Gb DG : 128Gb
(11) PACKAGE TYPE

(7) ORGANIZATION T : TSOP1

V : WSOP
8 : x8
S : USOP
6 : x16
N : LSOP1
F : FBGA
(8) NAND CLASSIFICATION X : LGA
M : WLGA
S : SLC + Single Die + Small Block Y : VLGA
A : SLC + Double Die + Small Block U : ULGA
B : SLC + Quadruple Die + Small Block W : Wafer
F : SLC + Single Die + Large Block C : PGD1 (chip)
G : SLC + Double Die + Large Block K : KGD
H : SLC + Quadruple Die + Large Block D : PGD2
J : SLC + ODP + Large Block
K : SLC + DSP + Large Block (10) DIE GENERATION
T : MLC + Single Die + Large Block
: MLC + Double Die + Large Block M : 1st
U
: MLC + Quadruple Die + Large Block A : 2nd
V
: MLC + DSP + Large Block B : 3rd
W
: MLC + ODP + Large Block C : 4th
Y
(9) FUNCTION MODE

1 : 1 nCE & 1 R/nB; Sequential Row Read Enable

2 : 1 nCE & 1 R/nB; Sequential Row Read Disable
4 : 2 nCE & 2 R/nB; Sequential Row Read Enable
5 : 2 nCE & 2 R/nB; Sequential Row Read Disable
D : Dual Interface; Sequential Row Read Disable
F : 4 nCE & 4 R/nB ; Sequential Row Read Disable
‘HY’ Part Number Last Updated: Dec. 2007

NAND Flash PART NUMBERING

HY XX X X XX XX X X - X (X) (X) (X) (X)

(1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13)

(1) HYNIX MEMORY

(13) OPTION(CUSTOMER)

(2) COMPONENT GROUP

Customer Initial
27 : NAND Flash Option

(12) BAD BLOCK

(3) POWER SUPPLY(VCC)
Blank : Wafer
U : 2.7V~3.6V B : Included Bad Block
L : 2.7V S : 1~5 Bad Block
S : 1.8V P : All Good Block

(4) CLASSIFICATION
(11) OPERATING TEMPERATURE

S : SLC + Single Die + S/B : Wafer, Chip

Blank
A : SLC + Double Die + S/B
C : 0℃~70℃
B : SLC + Quadruple Die + S/B
E : -25℃~85℃
F : SLC + Single Die + L/B
M : -30℃~85℃
G : SLC + Double Die + L/B
I : -40℃~85℃
H : SLC + Quadruple Die + L/B
K : SLC + DSP + L/B (10) PACKAGE MATERIAL
T : MLC + Single Die + L/B
U : MLC + Double Die + L/B Blank : Normal, Wafer, Chip, KGD
V : MLC + Quadruple Die + L/B P : Lead Free
W : MLC + DSP + L/B H : Halogen Free
R : Lead & Halogen Free
(5) BIT ORGANIZATION
(9) PACKAGE TYPE
08 : x8
16 : x16 T : TSOP1
32 : x32 V : WSOP
S : USOP
(6) DENSITY
E : WELP
64 28 : 128Mb F : FBGA(63ball)
: 64Mb
56 12 : 512Mb B : FBGA(107ball)
: 256Mb
1G 2G : 2Gb G : FBGA(149ball)
: 1Gb
4G 8G : 8Gb H : TBGA
: 4Gb
AG BG : 32Gb U : ULGA
: 16Gb
CG DG : 128Gb Y : VLGA
: 64Gb
ZG M : WLGA
: 48Gb
W : Wafer
(7) MODE C : Chip
K : KGD
1 : 1 nCE & 1 R/nB; Sequential Row Read Enable
D : PGD2
2 : 1 nCE & 1 R/nB; Sequential Row Read Disable
4 : 2 nCE & 2 R/nB; Sequential Row Read Enable
5 : 2 nCE & 2 R/nB; Sequential Row Read Disable (8) VERSION
6 : 1 nCE & 1 R/nB; Sequential Row Read Enable & Auto Read Page 0
M : 1st Gen.
7 : 2 nCE & 2 R/nB; Sequential Row Read Enable & Auto Read Page 0
A : 2nd Gen.
8 : 1 nCE & 1 R/nB; Sequential Row Read Disable & Auto Read Page 0
B : 3rd Gen.
9 : 2 nCE & 2 R/nB; Sequential Row Read Disable & Auto Read Page 0
C : 4th Gen.
D : Dual Interface; Sequential Row Read Disable
1 : Down Density(1st)
F : 4 nCE & 4 R/nB ; Sequential Row Read Disable
2 : Down Density(2nd)
T : 3 nCE & 3 R/nB ; Sequential Row Read Disable