Power Bipolar Junction

Transistor

PREPARED BY:NIKHIL KUSHWAHA(10M212)

SURYAKANT SHUKLA(10M252)

Power BJT
 Outline
• History
• Theory
• Transistor Types
• Characterstics of BJT
• BJT applications
• Power transistor and applications
• Summary
• References

Power BJT
 History of the Transistor

P-N Junction
Russell Ohl 1939

First Transistor
Bell Labs 1947
Shockley, Brattain,
and Bardeen

First Solid State

Transistor - 1951

Power BJT
 Replica of first Transistor

Bell Labs
December 23,1947

Power BJT
The number of
transistors that can be
placed inexpensively on
an integrated circuit has
doubled approximately
every two years

Moore's law precisely

describes a driving force
of technological and
social change in the late
20th and early 21st
centuries.

Processor development followed

Moore’s Law

Power BJT
 Introduction

NPN BJT with forward-biased E–B junction and reverse-biased B–C junction

A BJT consists of three differently doped semiconductor regions, the emitter

region, the base region and the collector region. These regions are, respectively,
p type, n type and p type in a PNP, and n type, p type and n type in a
NPN transistor. Each semiconductor region is connected to a terminal,
appropriately labeled: emitter (E), base (B) and collector (C).

Power BJT
 Power Transistors

• Generally
– Fabrication differences for dissipating more
heat
– Lower gain than signal transistors
• BJT
– essentially the same as a signal level BJT

• MOSFET
– base (fly back) diode
– Large current requirements:
use parallel MOSFETs

Power BJT
Power BJT
 Transistor Switching Times

Power BJT
 •1. Common Base Configuration   -   has Voltage Gain but no Current Gain.
• 
•2. Common Emitter Configuration   -   has both Current and Voltage Gain.
• 
3. Common Collector Configuration   -   has Current Gain but no Voltage Gain

Common Common Common

Characteristic
Base Emitter Collector

Input impedance Low Medium High

Output impedance Very High High Low

Phase Angle 0o 180o 0o

Voltage Gain High Medium Low

Current Gain Low Medium High

Power Gain Low Very High Medium

Power BJT
 Common-Emitter NPN Transistor

Reverse bias the CBJ

Forward bias the BEJ

Power BJT
 Input Characteristics

Plot IB as f(VBE, VCE)

As VCE increases, more
VBE required to turn
the BE on so that
IB>0.
Looks like a pn
junction volt-ampere
characteristic.

Power BJT
 Output Characteristics
Plot IC as f(VCE, IB)
Cutoff region (off)
 both BE and BC reverse
biased
Active region
 BE Forward biased
 BC Reverse biased
Saturation region (on)
 both BE and BC forward
biased

Power BJT
 Transfer Characteristics

Power BJT
 Transistor Operating Point

VB  VBE
IB 
RB
VCE VCC
IC   
RC RC
VCE  VCC  I C RC

Power BJT
 Operating Point

Power BJT
Maximum ratings of Power Transistors

Device Circuit Symbol Voltage/current Upper operating

ratings Frequency(kHz)

a) BJT 1400V/400A 10.0

b) MOSFET 1000V/50A 100.0

{n- channel}

c) SIT 1200V/300A 100.0

d) IGBT 1200V/500A 50.0

Power BJT
 BJT Vendors

•API Electronics Inc. {High Reliability BJT, QPL Power Transistor Manufacturer}

•Central Semiconductor {Small Signal BJT, Power transistors}

•Continental Device India Limited "CDIL" {General Purpose-Medium Power-Switching-

High Voltage-Low Frequency-RF-Darlington-Power Transistors}

•Diodes Inc. {Bipolar - Darlington - Prebiased Transistors, Low Saturation Transistors-

Medium Power/High Voltage Transistors-Darlington-RF-Avalanche Transistors-Multichip
Transistors-Low saturation Bipolars}

•Ericsson {RF Power Transistor Manufacturer}

•Infineon {RF 'BJT' Transistor Manufacturer}

•Linear Integrated Systems {Transistor Manufacturer}

•Micro Electronics Corp. {Transistor-To92/To-18/To-220/Metal Can/MT-42}

Power BJT
 APPLICATIONS
Because power semiconductors have very wide-ranging applications, the most
desirable type for a given application comes down to several factors: the
amplification, the switching speed, and the power class. Trends in particular
types can be seen in applications in industry, the consumer market, and
transportation

A. Industrial Applications

Within industry, the two main uses for power semiconductors are for motor control
and power supplies. For motor drives, power semiconductors can control all
sizes of motors from those found in large mills to simple machine tools.

B. Consumer Applications

In the consumer market, power semiconductors can be found in audio amplifiers,

heat controls, light dimmers, and again in motor controls.

Power BJT
 Application of the BJT Detector for Simple, Low-Cost, and
Low-Power Alpha-Particle detection Systems

Block diagram of the readout electronics. Photograph of the system assembly

Power BJT
In the recent past, a high-resistivity-silicon detector with internal signal amplification
based on the bipolar transistor (BJT) effect is developed. The operating principle
isanalogous to that of the phototransistor, widely employed for detecting light. With
the base left floating, the high-resistivity substrate (that acts as the collector region for
the BJT) can be depleted by a positive voltage applied between collector and
emitter terminals. The hole charge generated by an ionizing event is collected on the
base, then injected as a forward current toward the emitter, thus causing a much
larger electron current to flow between emitter and collector. The time integral of the
resulting emitter-current pulse amplifies the signal charge by a factor equal to the
current gain (βF) of the transistor. BJT detectors with peak βF up to 600 were in
particular fabricated, allowing for radiation detection with a very simple readout setup .
Owing to its intrinsic noise and speed limitations , the BJT detector can not be applied
when demanding resolution and counting-rate specifications are required, yet it is well
suited if simplicity and low cost of the readout electronics are the primary goals. In
order for its internal signal amplification capability to be fully exploited,the BJT must
generally be biased at a convenient quiescent current. This can either be done by
LED illumination or by base-current injection through a large-value polysilicon resistor
or an integrated pnp transistor acting as a current
source [6]. In any case, power consumption and system- or device-level complexity
increase.

Power BJT
 RDFC Applications
This application note provides
key parametric requirements of
power BJTs suitable for resonant
Discontinuous Forward converter
(RDFC) applications. As the
main power switch, the BJT will
undergo different stresses in
RDFC compared to hard
switching opologies such as
flyback. Selecting the correct
BJT is vital to obtain optimal
power supply performance and
meet safety requirements. Typical RDFC Application Circuit

Power BJT
Advantages
The key advantages that have allowed transistors to replace their
vacuum tube predecessors in most applications are

•Small size and minimal weight, allowing the development of

miniaturized electronic devices.
•Highly automated manufacturing processes, resulting in low per-
unit cost.
•Lower possible operating voltages, making transistors suitable for
small, battery-powered applications.
•No warm-up period for cathode heaters required after power
application.
•Lower power dissipation and generally greater energy efficiency.
•Higher reliability and greater physical ruggedness.
•Extremely long life. Some transistorized devices have been in service
for more than 50 years.

Power BJT
 Limitations
•Silicon transistors do not operate at voltages higher than about
1,000 volts (SiC devices can be operated as high as 3,000 volts). In
contrast, electron tubes have been developed that can be operated at
tens of thousands of volts.

•High power, high frequency operation, such as that used in over-

the-air television broadcasting, is better achieved in electron tubes
due to improved electron mobility in a vacuum.

•Silicon transistors are much more sensitive than electron tubes to an

electromagnetic pulse generated by a high-altitude nuclear explosion.

Power BJT
 Synthesis
• Application
– Switch for a digital signal: BJT or MOSFET
– Switch for a analog signal: JFET
– Switch for a power signal: Power MOSFET or BJT
– Current controlled-current amplifier: BJT
– Voltage controlled-current amplifier: JFET or
MOSFET
• Meet current & voltage requirements
• Speed: n-channel is faster than p-channel, npn is
faster thanpnp

Power BJT
 References

Mobile Robots: Inspiration to Implementation.

Jones, Seiger & Flynn. (1999).
• Introduction to Mechatronics. Histan & Alciatore.
(1999).
• The Art of Electronics. Horowitz. (1980).
• http://Whatis.techtarget.com
http://Wikipedia.com
Power Electronics, P. S. Bhimbhra

Power BJT
Power BJT