Taurus {device}

Define(
Top_Elec_Thick=100nm dy_Top_Elec=5nm yf_Top_Elec=1
Oxide_Thick=20.5nm dy_Oxide=1 nm yf_Oxide=1
Bulk_Depth1=100nm dy_Top_Bulk=1nm yf_Top_Bulk=1.01 ymax_Top_Bulk
=2nm
Bulk_Thick=2um dy_Bulk=$ymax_Top_Bulk yf_Bulk=1.05 ymax_Bulk=10 nm
Bot_Elec_Thick=100nm dy_Bot_Elec=5nm yf_Bot_Elec=1 ymax_Bot_Elec=5n
m

Dev_Left=-100nm
Dev_Right=100nm
)
DefineDevice (
MinX=$Dev_Left, maxX=$Dev_Right,
MinY=expr(-Oxide_Thick-Top_Elec_Thick), maxY=expr(Bulk_Thick+Bot_Elec_Thic
k),
# Define Mesh Lines
x=$Dev_Left,
x=expr(Dev_Left+Dev_Right),
x=$Dev_Right,
y=expr(-Top_Elec_Thick-Oxide_Thick), dy=$dy_Top_Elec, yfactor=$yf_Top_Elec,
yside=1,
y=expr(-Oxide_Thick), dy=$dy_Oxide, yfactor=$yf_Oxide, yside=1,
y=0 , dy=$dy_Top_Bulk, yfactor=$yf_Top_Bulk, dymax=$ymax_Top_Bulk, yside=1,
y=$Bulk_Depth1 , dy=$dy_Bulk, yfactor=$yf_Bulk, dymax=$ymax_Bulk, yside=1,
y=$Bulk_Thick, dy=$dy_Bot_Elec, yside=1,
y=expr(Bulk_Thick+Bot_Elec_Thick) ,

Region (name=silicon1, material=silicon),

Region (name=oxide1, material=oxide),
Region (name=gate, material=electrode)
Region (name=backgate, material=electrode)
)
DefineBoundary (Region=backgate,
Polygon2D (
Point (x=$Dev_Left,y=$Bulk_Thick),
Point (x=$Dev_Right,y=$Bulk_Thick),
Point (x=$Dev_Right,y=expr(Bulk_Thick+Bot_Elec_Thick)),
Point (x=$Dev_Left,y=expr(Bulk_Thick+Bot_Elec_Thick))
)
)
# Define the silicon substrate region
DefineBoundary (Region=silicon1,
Polygon2D (
Point (x=$Dev_Left,y=0nm),
Point (x=$Dev_Right,y=0nm),
Point (x=$Dev_Right,y=$Bulk_Thick),
Point(x=$Dev_Left,y=$Bulk_Thick)
 )
)
# Define the oxide region
DefineBoundary (
Region=oxide1,
Polygon2D (
Point (x=$Dev_Right,y=0nm),
Point (x=$Dev_Left,y=0nm),
Point (x=$Dev_Left,y=expr(-Oxide_Thick)),
Point (x=$Dev_Right,y=expr(-Oxide_Thick))
)
)

DefineBoundary (
Region=gate,
Polygon2D (
Point (x=$Dev_Right,y=expr(-Oxide_Thick)),
Point(x=$Dev_Left,y=expr(-Oxide_Thick)),
Point (x=$Dev_Left,y=expr(-Oxide_Thick-Top_Elec_Thick)),
Point (x=$Dev_Right,y=expr(-Oxide_Thick-Top_Elec_Thick))
)
)
DefineContact(
Region=gate IsContactRegion=true
Region=backgate IsContactRegion=true)

# Profile Specification
Profile (name=Ptype, region=Silicon1, Uniform (value=2.65e15))

# Initial Coarse Regrid

Regrid ()

# ***** 1st save- Save structure *****

# Save (meshfile=CapA_21nm_structure_traps.tdf)
# Specification of Physical Models
Physics (
Global ( Poissons (FermiStatisticsActive=true)
)
Silicon (
ElectronContinuity (
Mobility (
LowFieldMobility (conModelActive=true, conModel=AnalyticModel, sur
fModelActive=true, surfModel=LombardiSurfaceModel)
HighFieldMobility=true
)
)
)
)
Traps ( material(silicon,oxide), region(silicon1,oxide1) ,
TimeDep=false, Distributed=true,
uniform (nlevels=10, dgen=2, nt=1e11, taun=1e-2, taup=2e-2),
)

#setAttributes {
#Traps(material(silicon,oxide), distributed,
#trap(ilevel=0, dgen=1, et=-0.4, nt=1e11, taun=1e-3,
#taup=2e-7),
#trap(ilevel=1, dgen=1, et=0, nt=-1e11, taun=1e-3,
#taup=2e-7),
#trap(ilevel=2, dgen=1, et=0.4, nt=-1e11, taun=1e-3,
#taup=2e-7)
#)
#}

# Set equilibrium bias on contacts

Voltage( electrode=gate, value=0.0 )
Voltage( electrode=backgate, value=0.0 )
# Specify zero-carrier solution
Symbolic (carriers=0)
Solve {}
Symbolic (carriers=2)
Numerics(iterations=50)
Solve {}

Save (meshfile=CapA_21nm_ZeroBias.tdf)

solve{
acanalysis( logfile=CapA.data, frequency=1e2, terminal(gate,backgate),
RampSpecification(startValue=1, endValue=-3, nsteps=80){BiasO
bject(name=gate,type=contactvoltage)}
)
}

Save (meshfile=CapA_21nm_neg3Vtraps.tdf)