The Harman Kardon Model AVR80/AVR80MK II Manual A AUDIO AND VIDEO RECEIVER > < zB 2 s Technical Manual The following marks found in the parts of this manual identify the models as follows. GI AVAGO :North America area model Black version (oth Tact type mains switen) ® avavo ernational model Black version (with Tact type mains ewitch) GD AVAGOMK IL :North America area model Black version | (with Manual Operated Mechanical ype mains ewiteh) ! © Avarsowons) international model Black version (with Manual Operated Mechanical ype maine switch) CONTENTS | SPECIFICATIONS 2 GENERAL UNIT PARTS LIST ..... oe ELECTROSTATICALLY SENSITIVE (ES) DEVICE... GENERAL UNIT EXPLODED VIEW svsssscssoveus 13 LEAKAGE TEST P.C. BOARDS CONTROLS AND FUNCTIONS ELECTRICAL PARTS LIST. SERVICE PROCEDURE.......~ IC BLOCK DIAGRAMS TEST EQUIPMENT REQUIRED. SCHEMATIC DIAGRAMS GD. ALIGNMENT PROCEDURES SCHEMATIC DIAGRAMS @EB.. ALIGNMENT AND TEST POINTS... 9 PIN CONNECTION DIAGRAM. CIRCUIT DESCRIPTION WIRING DIAGRAM se BLOCK DIAGRAM... PACKING MATERIAL AND PARTS LIST 67 DISASSEMBLY PROCEDURES harman/kardon Fars andSartcoOfas Bo Croswaye Sar Wet, Wooebury. NY. 11797ONT SPECIFICATIONS |FRONT/AMPISECTION: SSeS Nominal Limit Continuous Power Output (STEREO MODE), Input:CD —-2110W 2100 W THD: 0.09%, 8 ohms ‘Both Channel Driven (20 He - 20 kHz) (SURROUND MODE) 285.W 275 THD: 0.9%, 8 ohms, 1 kHz ‘THD at 100 W, 8 ohms, Input: CD 20 Hz 003% 0.00% iz 50.01% 0.09% 20 kHe 005% 0.09% IM Distortion at 100 W, 8 ohms, Vol: Max. 50.03% — <0.09% Input Sensitivity for Rated Power Output (100 W) CO/TAPEN/TAPE2/TVILD 250mV 220-290 mv VoRi/VCRRIAUX 250mV_—— 220-280 mv SSIN Ratio Input Shorted at 1kH2 1W Output (WTD IHF-A) cD 26248 78dB Tone Contra! Base: 100 Hz ods +10#2.5 08 40dB - 1022548 ‘Treble: 10kHz 4106841022508 “1048 1032.5 48 Frequency Response at 268 Mode: Storeo, Rt: 1 kH2, Sub Woofer: ON B0H2-70KH2 90 Hz-SOkHz Po 1 KHz, Sub Woofer: OFF 1OH2-7OkH2 15 H2- 50 KHZ Input Shorted by 1 kohms 25508 2508 245.8240 dB 235¢8 23008 OCENTER AMP SECTION MS Output Power THO (0.3%, 8 ohms, 1 kHz) Only Genter Channel Driven atow 2100 W, SIN Ratio (input Level : 141 mV) Input Shorted, 1HE-A WTO 272dB (688 Frequency Response at-3 d8 Bote, Dolby Pro-Logic 1H2-22kHz 0 Hz - 20 kHz AMS Output Power ‘THO (0.7%, 8 ohms, 1 kHz) Be Only Rear Channel Driven 205 W a75W ‘SIN Rao (Input Shorted, IHF-A WTO) Delay: 20 ms, Input Level: 141 mV 272dB (268 dB Frequency Response at-3 dB Bohms, Dolby Pro-Logic 1SH2-7kHz 30Hz-65 kHz _ SUB WOOFER SECTION” ss Line level at Pre out ‘Surround mode : Dolby Pro-Logle CConter speaker mode : Largo Input signal :L ch (only) 200m Master volume : 0 68 ‘Approx. 150 mVims Low pass crossover frequency 80 He cutoff ‘Siope (Low Pass fiter) 24 dB / octave SVIDEO"AMP'SECTION Sis ad Nominal Limit Input Sensitivity/impedance LD, TV, VERT, VCR2, AUX 1 ve8iT5.0 $148 ‘Output Levevimpedance VeR1, VCR2, Monitor types. $148 Frequency Response at-3.48 DC-B MHz — 0C-6MHz 87.50 - 108.00 Mitz ‘Mone Usable Sensitivity (75 ohms input, 98 MHz) Tuning Cover Range 50 kHz Step 138 dbl <19.2abf Image Rejection (at 98 MHz) USA/Canada 2600324068 Europe 270483608 IF Rojection at 98 MHz) 2700826548 50 dB Quieting Sensitivity (at 98 Mrz, 190% MOD.) IHF Band Pass Fier Stereo ss92 dot <49.3 cbt Distortion (1 k#z, 100% MOD. at 98 MHz, 65db Input) IMF Band Pass Fiter Mono 0.2% 505% ‘SIN Ratio (500 pV Input, 100% MOD, at 98 MHz} IHF Band Pass Fitter Stereo 26508 2608 Frequency Response (90 Hz - 18 kHz) USAICanada De-Emphasis: 75uS +0548 41.008 Europe De-Emphasis: 50uS 2008 +4008 AM Suppression at 98 MHZ 2ssd8 45 d8 Muting Threshold at 98 MHz) 27.2dbt—-23.8.82.00bt Overioad Broak-up at 98 MHz 71 dbf 65 abt Capture Ratio at 65 dbt s15d8 <250B ‘Stereo Separation (at 98 MHz, 100% MOD., 500 nV Input) IMF Band Pass Fier tke 24ods 2308 Tape out Level (at 98 MHz) 00mVv 600-1300 mv SAM SECTION Ss = ‘Nominal ‘Tuning Cover Range (MW) USA/Canada : 10 KHz Stop 520-1710 KHz Other : 9 kHz Stop 531 - 1602 kHz ‘Tuning Cover Range (LW) 1 kz Step 152 kia «262 kHz Usable Sensitivity ‘MW at 990/1000 KHz 500 Vim <800 yim LW at 207 kitz +<1500 wvim <2500 Vim Image Rejection (at 999 kHz) 240032358 IF Rejection (at 99/1000 kHz) 2608 «38008, Spurious Rejection (at 999/1000 kH2) 2653 25508 [AGO Figure of Marit (From 100 mim at 899/1000 kHz) 25508 (3a8d8 Distortion (999/1000 Hz, 80% MOD. 60 mm Input) 1.0% 2.0% Frequency Response (999/1000 kHz) at-3 0B 100H2-2.2kH2 1502 1.8 KHZ Selectivity (at 999/1000 Hz) ‘9 kHa/10 KH 23068-22008, 1B KHa/20KH2 27008 26008 SIN Ratio (989/000 kHz, With Antenna Input 50 mV) (Europe: Using 1SkHr LPF) 2506825 dB (verioad Break-up at 999/1000 kHz (THD 10%) "21000 mVim 2500 Vim TAPE Output Lovel a 999/1000 ki (5 mV/m input) 24omv 150-340. mvNTT Nominal Limit Power Consumption [At Rated Powor All Channel Driven 400 W 300 - 500W Idling at Minimum Volume Control 55 W 45-65 UsA'Canada AC 120 V, 60 He Europe ‘AC 230 V, 50 Hz Dimensions (W x H x D) Inches AT MB G38 1Qh"6 mm 404 x 160 x 459 Weight (osikgs) seas ‘These specifications are service target specs. ‘Specifications and components are subject to change without notice. Overall performance will be maintained or improved. ELECTROSTATICALLY SENSITIVE (ES) DEVICES ‘Some semiconductor (solid state) devices can be damaged easily by static electricity. Such components commonly are called Electrostatically Sensitive (ES) Devices. Examples of typical ES devices are integrated circuits and some field effect transistors and semiconductor “chip" components. The following techniques should be used to help reduce the incidence of component damage caused by static electricity. 1. Immediately before handling any semiconductor component or semiconductor-equipped assembly, drain off any electrostatic charge on your body by touching a known earth ground. Alternatively, obtain and wear a ‘commercially available discharging wrist strap device, which should be removed for potential shock reasons prior to applying power to the unit under test. 2. After removing an electrical assembly equipped with ES devices, place the assembly on a conductive surface ‘such as aluminum fol, to prevent electrostatic charge buildup or exposure of the assembly. 3. Use only a grounded-tip soldering iron to solder or unsolder ES devices. 4. Use only an anti-static solder removal device. Some solder removal devices not classified as “anti-static" can generate electrical charges sufficient to damage ES devices 5. Do not use freon-propelied chemicals. These can generate electrical change sufficient to damage ES devices. 6. Donot remove a replacement ES device from its protective package until immediately before you are ready to install it. (Most replacement ES devices are packaged with leads electrically shorted together by conductive foam, aluminum foll or comparable conductive material.) 7. Immediately before removing the protective material from the leads of a replacement ES device, touch the protective material to the chassis or circult assembly into which the device will be installed. CAUTION: Be sure no power is applied to the chassis or circuit, and observe all other safety precautions. 8. Minimize bodily motions when handling unpackaged replacement ES devices. (Otherwise harmless motion ‘such as the brushing together or your clothes fabric or the lifting of your foot from a carpeted floor can generate static electricity sufficient to damage an ES device.) PRODUCT SAFETY NOTICE Each precaution in this manual should be followed during servici Components identified withthe IEC symbol Zin tho parts list ar of special significance to safety, When replacing a component identified with A. , use only the replacement parts designated, or parts with the same ratings or resistance, wattage, of voltage that are designated in the parts list in this manual. Leakage - current or resistance measurements must be made to determine that exposed parts are acceptably insulated from the supply circuit before returning the product to the customer.