2N4856A/4857A/4858A

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY
Part VGS(off) V(BR)GSS IDSS Min rDS(on) Max ID(off) Typ tON Typ
Number (V) Min (V) (mA) (W) (pA) (ns)
2N4856A –4 to –10 –40 50 25 5 4
2N4857A –2 to –6 –40 20 40 5 4
2N4858A –0.8 to –4 –40 8 60 5 4

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 2N4856A
<25 W
D Fast Switching—tON: 4 ns
D High Off-Isolation—I D(off): 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
D Low Error Voltage D Analog Switches
D High-Speed Analog Circuit Performance D Choppers
D Negligible “Off-Error,” Excellent Accuracy D Sample-and-Hold
D Good Frequency Response D Normally “On” Switches
D Eliminates Additional Buffering D Current Limiters

DESCRIPTION
The 2N4856A/4857A/4858A all-purpose JFET analog
switches offer low on-resistance, low capacitance, good
isolation, and fast switching.
Hermetically-sealed TO-206AA (TO-18) packaging allows full
military processing (see Military Information). For similar
products in TO-226AA (TO-92) and SOT-23 packages, see the
J/SST111 series data sheet. For similar duals, see the
2N5564/5565/5566 data sheet.

TO-206AA
(TO-18)

2 3
D G and Case

Top View

Document Number: 70243 www.vishay.com

S-04028—Rev. D, 04-Jun-01 7-1
2N4856A/4857A/4858A
Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage : (2N4856A-58A) . . . . . . . . . . . . . . . –40 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 200_C
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 W

Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Notes

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C a. Derate 10 mW/_C for TC > 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
2N4856A 2N4857A 2N4858A

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit

Static
Gate-Source
V(BR)GSS IG = –1 mA , VDS = 0 V –55 –40 –40 –40
Breakdown Voltage
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.5 nA –4 –10 –2 –6 –0.8 –4

Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 50 20 100 8 80 mA

VGS = –20 V, VDS = 0 V –5 –250 –250 –250 pA

Gate Reverse Current IGSS
TA = 150_C –13 –500 –500 –500 nA

Gate Operating Currentc IG VDG = 15 V, ID = 10 mA –5

pA
VDS = 15 V, VGS = –10 V 5 250 250 250
Drain Cutoff Current ID(off)
TA = 150_C 13 500 500 500 nA

ID = 5 mA 0.25 0.5

Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA 0.35 0.5 V

ID = 20 mA 0.5 0.75

Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 1 mA 25 40 60 W

Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V 0.7 V

Dynamic
Common-Source
gfs 6 mS
Forward Transconductancec
VDS = 20 V, ID = 1 mA
Common-Source f = 1 kHz
gos 25 mS
Output Conductancec

VGS = 0 V, ID = 0 mA
Drain-Source On-Resistance rds(on) 25 40 60 W
f = 1 kHz

Common-Source
Ciss 7 10 10 10
Input Capacitance
VDS = 0 V, VGS = –10 V
pF
Common-Source f = 1 MHz
Crss 3 4 3.5 3.5
Reverse Transfer Capacitance

Equivalent Input VDS = 10 V, ID = 10 mA nV⁄

en 3
Noise Voltagec f = 1 kHz √Hz

Switching
td(on) 2 5 6 8
Turn-On Time VDD = 10 V, VGSH = 0 V
tr 2 3 4 8 ns
See Switching Circuit
Turn-Off Time tOFF 12 20 40 80

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v100 ms duty cycle v10%.
c. This parameter not registered with JEDEC.

www.vishay.com Document Number: 70243

7-2 S-04028—Rev. D, 04-Jun-01
 2N4856A/4857A/4858A
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current
100 200 100
rDS @ ID = 1 mA, VGS = 0 TA = 25_C
rDS(on) – Drain-Source On-Resistance ( Ω )

rDS(on) – Drain-Source On-Resistance ( Ω )

IDSS @ VDS = 20 V, VGS = 0

IDSS – Saturation Drain Current (mA)

80 160 80

IDSS VGS(off) = –2 V
60 rDS 120 60

40 80 40
–4 V

20 40 20 –8 V

0 0 0
0 –2 –4 –6 –8 –10 1 10 100
VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)

On-Resistance vs. Temperature Turn-On Switching

200 5
ID = 1 mA
rDS(on) – Drain-Source On-Resistance ( Ω )

rDS changes X 0.7%/_C tr approximately independent of ID

VDG = 5 V, RG = 50 W
160 4 VGS(L) = –10 V
Switching Time (ns)

tr
120 3
td(on) @
ID = 12 mA
80 VGS(off) = –2 V
2

–4 V
40 1 td(on) @
ID = 3 mA
–8 V

0 0
–55 –35 –15 5 25 45 65 85 105 125 0 –2 –4 –6 –8 –10
TA – Temperature (_C) VGS(off) – Gate-Source Cutoff Voltage (V)

Turn-Off Switching Capacitance vs. Gate-Source Voltage

30 30
td(off) independent of device VGS(off) f = 1 MHz
VDG = 5 V, VGS(L) = –10 V
24 24
Switching Time (ns)

Capacitance (pF)

18 18
VGS(off) = –2 V
tf

12 12
td(off)
Ciss @ VDS = 0 V
6 6
VGS(off) = –8 V Crss @ VDS = 0 V

0 0
0 2 4 6 8 10 0 –4 –8 –12 –16 –20
ID – Drain Current (mA) VGS – Gate-Source Voltage (V)

Document Number: 70243 www.vishay.com

S-04028—Rev. D, 04-Jun-01 7-3
2N4856A/4857A/4858A
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Forward Transconductance and Output Conductance

Noise Voltage vs. Frequency vs. Gate-Source Cutoff Voltage
100 50 500
gfs and gos @ VDS = 20 V
VDG = 10 V VGS = 0 V, f = kHz

gfs – Forward Transconductance (mS)

gos – Output Conductance (µS)

40 400
Hz
en – Noise Voltage nV /

gfs gos
30 300

10
ID = 1 mA
20 200

ID = 10 mA
10 100

1 0 0
10 100 1k 10 k 100 k 0 –2 –4 –6 –8 –10
f – Frequency (Hz) VGS(off) – Gate-Source Cutoff Voltage (V)

Gate Leakage Current Common-Gate Input Admittance

10 nA 100
IGSS @ 25_C
VDG = 10 V
ID = 10 mA ID = 10 mA
TA = 125_C TA = 25_C
1 nA gig
IG – Gate Leakage

10
1 mA
100 pA big
1 mA
(mS)

10 pA 10 mA IGSS @ 25_C
TA = 25_C 1

1 pA

IG(on) @ ID
0.1 pA 0.1
0 6 12 18 24 30 100 200 500 1000

VDG – Drain-Gate Voltage (V) f – Frequency (MHz)

Common-Gate Forward Admittance Common-Gate Reverse Admittance

100 10
VDG = 10 V VDG = 10 V
ID = 10 mA ID = 10 mA
TA = 25_C TA = 25_C
–gfg bfg
–brg
10 1

gfg
(mS)

(mS)

+grg
–grg
1 0.1

0.1 0.01
100 200 500 1000 100 200 500 1000
f – Frequency (MHz) f – Frequency (MHz)

www.vishay.com Document Number: 70243

7-4 S-04028—Rev. D, 04-Jun-01
 2N4856A/4857A/4858A
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Gate Output Admittance Output Characteristics

100 20
VDG = 10 V VGS(off) = –2 V
ID = 10 mA
TA = 25_C
16
bog

ID – Drain Current (mA)

10
12 VGS = 0 V –0.2 V
(mS)

–0.4 V
gog
8 –0.6 V
1
–0.8 V
4
–1.0 V
–1.2 V
0.1 0
100 200 500 1000 0 0.2 0.4 0.6 0.8 1.0

f – Frequency (MHz) VDS – Drain-Source Voltage (V)

Output Characteristics Output Characteristics

40 50
VGS(off) = –4 V VGS(off) = –8 V

32 40
–1 V
VGS = 0 V
ID – Drain Current (mA)

ID – Drain Current (mA)

24 VGS = 0 V –0.5 V 30 –2 V

–1.0 V –3 V

16 –1.5 V 20 –4 V

–2.0 V
–5 V
8 10
–2.5 V
–6 V
–3.0 V
0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

VDD

SWITCHING TIME TEST CIRCUIT RL

2N4856A 2N4857A 2N4858A

OUT
VGS(L) –10 V –6 V –4 V
VGS(H)
RL* 464 W 953 W 1910 W VGS(L)
ID(on) 20 mA 10 mA 5 mA
1 κΩ 51 Ω
*Non-inductive
VIN
INPUT PULSE SAMPLING SCOPE Scope
Rise Time < 1 ns Rise Time 0.4 ns 51 Ω
Fall Time < 1 ns Input Resistance 10 MW
Pulse Width 100 ns Input Capacitance 1.5 pF
PRF 1 MHz

Document Number: 70243 www.vishay.com

S-04028—Rev. D, 04-Jun-01 7-5