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Intelligent Power Devices (IPDs)

MIP301
Silicon MOS IC

■ Features
unit: mm
● 100V high breakdown voltage MOS FET and CMOS control cir-

0.6±0.3

0.4±0.25
cuits are integrated into one chip
● 5V and 3 - 5W output with 24VDC input (Flyback method)
1 8

2 7

5.0±0.3
■ Applications
3 6
● IPD for DC/DC converter

1.27
4 5

0.1±0.1

1.5±0.2
0.3

0.2±0.1
0.65
4.2±0.3
■ Absolute Maximum Ratings (Ta = 25 ± 3°C) 6.5±0.3

Parameter Symbol Ratings Unit


Drain voltage VD 90 V 1: VIN 5: Drain
2: Source 6: Source
Control voltage VC 8 V 3: Source 7: Source
Input voltage VIN 30 V 4: Control 8: Source
SO-8P Type Package
Output current ID 1.1 A
Control current IC 0.1 A
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C

■ Block Diagram

VIN
0 Auto-restart Drain pin
Control pin Shutdown/Auto-restart
Power supply Auto-restart current-source
Shunt for internal
regulator + 1 circuit
5.7V D -
4.7V - T +
Q Ron X ID
- R
+ Q
+
-

PWM control Q
Thermal shutdown S Power
current
circuit MOS FET
Restarting R
Q
trigger circuit
Max Duty
Clock Q
S
Sawtooth - Leading edge
+ R blanking
Q

Low pass filter Minimum ON-time


delay circuit
Source pin

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Intelligent Power Devices (IPDs) MIP301

■ Electrical Characteristics (TC = 25 ± 2°C)


Parameter Symbol Conditions min typ max Unit
Output frequency fOSC IC = 2mA 180 200 220 kHz
Maximum duty cycle MAXDC IC = 2mA 77 80 83 %
Minimum duty cycle MINDC IC = 10mA 0 3 5 %
Control functions
PWM gain GPWM −21 −16 −11 %/mA
Circuit current Is 0.8 2.5 4 mA
Dynamic impedance ZC IC = 3mA 10 15 25 Ω
VC = 0 −2.4 −1.9 −1.2 mA
Control pin charging current IC
VC = 5V −2 −1.5 − 0.8 mA
Auto-restart Auto-restart threshold voltage VC(on) 5 5.7 6.3 V
Lockout threshold voltage VC(off) 4 4.7 5.3 V
Auto-restart hysteresis voltage ∆VC 0.5 1 1.5 V
Self-protection current limit ILIMIT 0.9 1 1.1 A
Leading edge blanking delay ton(BLK) IC = 3mA 0.25 µs
Circuit protection Current limit delay td(OCL) IC = 3mA 0.1 µs
Thermal shutdown temperature TOTP IC = 3mA 130 140 150 °C
Power-up reset threshold voltage VC reset 2.3 3.3 4.2 V
ON-state resistance RDS(on) ID = 1A 1.8 2.2 Ω
OFF-state current IDSS VDS = 82V Output MOS FET disabled 0.01 0.25 mA
Output Breakdown voltage VDSS ID = 0.25mA Output MOS FET disabled 92 V
Rise time tr 0.1 0.2 µs
Fall time tf 0.1 0.2 µs
Start threshold voltage VIN(START) 16 18.2 V
Stop threshold voltage VIN(STOP) 10 12.2 V
Power supply voltage Input hysteresis voltage ∆VIN 5.5 7.5 V
Shunt regulator voltage VC IC = 3mA 5.4 5.7 6.1 V
Control supply/discharge current ICD Output MOS FET disabled 0.5 0.8 1.1 mA

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