Lecture 2-IntelliSuite Tutorial

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR
Lecture 2
IntelliSuite Tutorial
Sazzadur Chowdhury, Ph.D. Electrical and Computer Engineering
06-88-435
Microelectromechanical Systems (MEMS)
Summer 2011
Overview
IntelliSuite is a MEMS design and verification tool The software can simulate actual steps in a fabrication process to develop a 3-D model of a MEMS device The developed 3-D model can then be used to perform 3-D simulations such as Electrostatic, Mechanical, Thermal or Coupled thermoelectro-mechanical simulations using finite element analysis method Microfluidics Electromagnetic Electrokinetics Packaging System level simulation Macro-model extraction
http://www.intellisensesoftware.com
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MEMS Process Simulation Design Flow
Wafer
Deposition
Lithography
Etch
3-D Model
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MEMS 3-D Model Behavior Simulation Concept
Fab. Proc. Simulation Load
Manual 3-D Builder Meshing
3-D Model Boundary Condition Behavior Pattern

Analysis Options
MEMS Simulation Objectives
To investigate a materials physical characteristics for suitability of its use in a particular device based on a specific deposition method Selection of a deposition or etching method for a material to obtain a desired device geometry To optimize the process steps Check for process compatibility To simulate the 3-D model of the device for behavior
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IntelliSuite Overview
IntelliFab IntelliMask Mematerial 3-D Builder Thermoelectromechanical Analysis Microfluidics and BioMEMS AnisE (Anisotropic Etch Simulation) Technical Reference
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IntelliFab: Getting Started

Start IntelliSuite Intellifab
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IntelliFab
File Process Database Construct Simulation
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Adding a Fabrication Process Step
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Building a Process Table
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3-D Visualization
Construct Visualize Scale Sequence once Cross-section

Database
This option allows you to add process steps to the currently open database. New materials are added to MEMaterial
Deposition, Etching, Bond, Mask, Substrate, Electroplating, Doping, Liftoff Metalization, or Clean.
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Process Steps
Bonding Definition Deposition Doping Electroplating Etch Sacrifice Laser Ablation (Ablation is the process of removing material by vaporization or disintegration.
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IntelliMask
Single Mask Multilayer Mask Convert (DXF, GDSII) The IntelliSuite GDSII file converter provides several options. Users can convert all cells, or just selected cells, of a multi-cell multi-level *.gds file into multi-layer *.msk files. A multi-layer *.msk file will be generated for each selected cell, and also for each sub cell of the selected cell
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GDS Cell Tree After Conversion
IntelliSuite Masks can be exported to GDSII format for fabrication
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IntelliMask Features
Manhattan geometry Non-Manhattan Geometry Cartesian Co-ordinate Polar Coordinate Switch layers
Mask Editor Tool Bar
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Grids and Layers
Keyboard Entry
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Mematerial
Mematerial is a powerful, easy-to-use simulation tool for the mechanical, electrical, and optical modeling of thin films deposited on silicon substrates. Applications include the design of: Microsensors and microactuators Integrated circuits Device packaging Other silicon microstructures The software presents data on the properties of materials in two- and three dimensional graphs as well as in tables All data are experimentally verified New values can be predicted using interpolation and extrapolation
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Mematerial
Parameter Graphs
Mematerial Window Single Parameter of interest
Parameter Window
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Two parameter of interest

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Mematerial: Data Manipulation
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3D Builder
2-D area
3-D Area
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Elements Construction
Gaps and overlaps cannot exist anywhere along the common edge when a continuous structure is modeled. The adjacent edges either must both be straight, or they must have compatible curvatures.
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Mesh Refinement
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ThermoelectricalMechanical Module
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Analysis Option
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Analysis Options: Static Analysis
Stress/Displacement Heat Transfer Heat Transfer / Thermal Stress Thermal Electrical Thermal Electrical / Thermal Stress ThermoElectroMechanical Relaxation Electrostatic Electrostatic Force vs. Displacement
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Relaxation Method
Domain 1 ( ( ( f1( x1 i 1 ) , x2 i ) ,....., xmi ) ) 0 Domain 2 ( ( ( f 2 ( x1 i 1 ) , x2 i 1 ) ,....., xmi 1 ) ) 0 Domain m

i=i+1
( ( ( f m ( x1 i 1 ) , x2 i 1 ) ,....., xmi 1 ) ) 0
No
Converged
Yes
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Analysis Options: Frequency Analysis
Static Stress Heat Transfer / Thermal Stress ThermoElectroMechanical Relaxation
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Analysis Options: Dynamic Analysis
Stress / Disp. (Direct Integration) Stress / Disp. (Mode Based) Heat Transfer Transient Thermal Electrical Transient Stress / Disp. / Squeezed Film (Direct Integration) Stress / Disp. / Electrostatic (Direct Integration) Stress / Disp. / Electrostatic (Mode Based) Stress / Disp. / Electrostatic / Squeezed Film (Direct Integration)
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Analysis Options: Macro-Model
Rigid Body Variables Spring Constants Squeezed Film Damping Variables Capacitance Capacitance vs. Displacement Mechanical Reduced Order Modeling ElectroMechanical Reduced Order Modeling
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Loads
Several types of loads can be applied in the ThermoElectroMechanical Analysis module: Temperature, Pressure, Displacement, Heat Convection, Heat Flux, Acceleration, Coriolis Force, Voltage, Current, and Charge Density. Loads can be applied on a face or a node Amplitude vs Time Amplitude vs Frequency
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Boundary
Fixed YZ Fixed XY fixed XZ fixed X fixed Y Fixed Z Fixed Free Attach spring, etc.
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Load-Boundary Application Example
0 V DC
1 Pascal Fixed Boundary
Fixed Boundary
12 V DC
PECVD Nitride, Au and Ti layers are removed 4 lateral faces of the diaphragm are X, Y, Z fixed Nitride Backplate and wafer faces are X, Y, Z fixed
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Mesh
Automesh User Defined mesh Mechanical mesh Electrical mesh
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Result

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Displacement Deformed shape Stress components Stress invariants Potential Electrical field Current density Capacitance Charge density Pressure Natural frequency Mode animation Macromodel
Node value Node curve 2-d plot- Mechanical 2-D plotElectromechanical
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Layout: Die Size
Click Construction Layout Die size
Die Size Entry Window
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Electrostatic Comb Drive Example
Courtesy: Sandia Laboratory
An electrostatic comb drive is a kind of resonator that is actuated electrostatically. The movement of the free comb due to electrostatic excitation changes the capacitance among the comb fingers, which is sensed and used to drive some other micro structure
Microelectromechanical Systems (MEMS) Summer 2011
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Comb Drive Construction: Begin
Click Construction Show Palette
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Step 1 Substrate Definition

Click Definition Geometry Si Czochralski
The OpSet window pops up and data can now be entered in the OpSet window
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Substrate Definition OpSet Window
Change parameters as necessary Click Add process Add process The OpSet window disappears, and first step is entered into the Process Table. The Process Construction Palette remains on the screen OpSet Window
Step 2:
Click Etch Element Si Clean Click Process Piranha Add Process Add Process
Substrate Clean Up
Piranha: A solution of H2SO4 and H2O2 at 1200 C

Result of 2nd Step
The wafer is cleaned and the 2nd step is added to the process construction table Click Construction Visualize Visualizer window pops up Click Visualize All A 3-D model of the structure is displayed. Using middle or right mouse button adjust a suitable view angle.
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Step 3 Silicon Dioxide Deposition

Click Deposition Compounds SiO2 Thermal Time_dep (enter 600) H20 pp (enter 10) t-film (entert_685) t_etch( enter 685) t_after (enter 0) Add Process Add Process
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Process Construction Palette
OpSet Window Entry
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Step 4 Silicon Nitride Deposition

Click Deposition Compounds Si3N4 PECVD t_film (enter 1000)
Add Process Add Process
This layer protects the wafer during subsequent processing

Step 5 Cleaning After Plasma Deposition

Click Etch Element Si Clean
RCA: A solution of NH4OH:H2O2:H2O
Process RCA Add Process Add Process This cleaning step is necessary because diffusion cannot follow plasma deposition
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Step 6 Polysilicon Layer Deposition

Click Deposition Compounds PolySi LPCVD t_film (enter 2000) Add Process Add Process
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Step 7 Aluminum Contact Deposition

Click Deposit Element Al Sputter Process Ar-Ambient
Add Process Add Process
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Step 8 Photoresist Deposition

Click Deposition Polymers PR-S1800 Spin Add Process Add Process PR-S1800 series is a positive photoresist. It is a proprietary chemical from Shipley Corporation, MA, USA. Main ingredients are: (1) Propylene glycol methyl ether acetate (70%), (2) A Novalac resin (20%), and (3) diazonapthoquinone (1-10%)
Step 9 First Mask Definition
Click Definition Mask UV Contact Mask Number (enter 1) Process Suss Add Process Add Process
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Mask Definition OpSet Window
Mask No. (Must be a unique numerical value)
Click Layout twice to invoke the Mask Editor

Mask Editor: First Mask
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Step 10 Photoresist Pattern

Click Etch Polymers PR-S1800 Wet Process: 1112A (solvent) t_etch (enter 990000) Add Process Add Process
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Step 11 Aluminum Etch

Click Etch Element Al Wet Process PAN t_etch (enter 990000) Add process Add process
PAN
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Phosphoric+Acetic+Nitric Acid
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Step 12 Photoresist Strip

Click Etch Polymers PR-S1800 Wet Process: 1165 (solvent) t_etch (enter 990000) Add Process Add Process
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Step 13 2nd Photoresist Deposition
Click Deposition Polymers PR-S1800 Spin Add Process Add Process
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Step14 2nd Mask Definition
Click Definition Mask UV Contact Mask Number (enter 2) Process Suss Add Process Add Process
This mask patterns the polysilicon layer

Mask Editor: Second Mask
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Step 15 Photoresist Etch

Click Etch Polymers PR-S1800 Wet Process: 1112A (solvent) t_etch (enter 990000) Add Process Add Process
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Step 16 Polysilicon Plasma Etch

Click Etch Compound Poly Si Dry Process SF6-Plasma T_etch (enter 990000) Add Process Add Process
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Step 17 Photoresist Strip

Click Etch Polymers PR-S1800 Wet Process: 1165 (solvent) t_etch (enter 990000) Add Process Add Process
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Step 18 Nitride Etch
Click Etch Compound Si3N4 Wet Process Sacrifice t_etch (enter 1e6) Add Process Add Process Phosphoric acid (70% concentrated)
Step 19 Silicon Dioxide Etch

Click Etch Compound SiO2 Wet Process: BOE(solvent) t_etch (enter 990000) Add Process Add Process
Buffered Oxide Etch (BOE) is a 5:1 mixture of NH4F and HF

Step 20 Substrate Sacrificial Etch

Click Etch Element Si Wet Process Sacrifice t_etch (enter 1e6) Add Process Add Process
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Comb Drive 3-D model
Complete Process table

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3_D Model
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IntelliSuite Fabrication Simulation Example
Conceptual Drawing
IntelliSuite Fabrication Simulation Result Cross-section
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IntelliSuite Fabrication Simulation Example
Conceptual Drawing
IntelliSuite Fabrication Simulation Result Cross-section
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Intellisuite Fabrication Simulation of an Electromagnetic Microactuator
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IntelliSuite Simulation Result of Electrostatic Pressure due to a Bias Voltage
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IntelliSuite Simulation Result of Displacement due to Electrostatic Pressure due to a Bias Voltage
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Animation of a Diaphragm Vibration for an Acoustical Wave at 1 kHz at 1 Pascal
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IntelliSuite Dynamic Analysis Example
Transient Response of a Diaphragm Vibration for an Acoustical Wave at 1kHz at 1 Pascal

IntelliSuite Dynamic Analysis Example
Resonant peak for first vibrational mode
Mode based steady state analysis
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Lecture 2-IntelliSuite Tutorial

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RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Sazzadur Chowdhury, Ph.D. Electrical and Computer Engineering

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

MEMS Process Simulation Design Flow

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

MEMS 3-D Model Behavior Simulation Concept

Fab. Proc. Simulation Load

Manual 3-D Builder Meshing

3-D Model Boundary Condition Behavior Pattern

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

MEMS Simulation Objectives

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

IntelliFab: Getting Started

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

File Process Database Construct Simulation

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Adding a Fabrication Process Step

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Building a Process Table

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Construct Visualize Scale Sequence once Cross-section

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

GDS Cell Tree After Conversion

IntelliSuite Masks can be exported to GDSII format for fabrication

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Mask Editor Tool Bar

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Grids and Layers

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Mematerial Window Single Parameter of interest

Two parameter of interest

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Mematerial: Data Manipulation

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

Microelectromechanical Systems (MEMS)