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IRF7338
HEXFET Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
D1 D1
P-Ch -12V
D2 D2
P-CHANNEL MOSFET
Top View
Description
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
SO-8
Max.
N-Channel 12 6.3 5.2 26 2.0 1.3 16 12 -55 to + 150 8.0 P-Channel -12 -3.0 -2.5 -13
Units
W mW/C V C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
Max.
20 62.5
Units
C/W
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1
6/2/03
IRF7338
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 12 -12 0.6 -0.40 9.2 3.5 Typ. 0.01 -0.01 6.0 9.6 7.6 13 26 27 34 25 640 490 340 80 110 58 Max. 0.034 0.060 0.150 0.200 1.5 -1.0 20 -1.0 50 -25 100 100 8.6 6.6 1.9 1.3 3.9 1.6 Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 4.5V, ID = 6.0A VGS = 3.0V, ID = 2.0A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 6.0V, ID = 6.0A VDS = -6.0V, ID = -1.5A VDS = 9.6V, VGS = 0V VDS = -9.6 V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = 55C VDS = -9.6V, VGS = 0V, TJ = 55C VGS = 12V VGS = 8.0V N-Channel ID = 6.0A, VDS = 6.0V, VGS = 4.5V P-Channel ID = -2.9A, VDS = -9.6V, VGS = -4.5 V N-Channel VDD = 6.0V, ID = 1.0A, RG = 6.0, VGS = 4.5V P-Channel VDD = -6.0V, ID = -2.9A, RG = 6.0, VGS = -4.5V pF N-Channel VGS = 0V, VDS = 9.0V, = 1.0MHz P-Channel VGS = 0V, VDS = -9.0V, = 1.0KHz
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC
ns
Notes:
Surface mounted on 1 in square Cu board. The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
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N-Channel
IRF7338
VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP
100
10
VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP
100
10
1.5V
0.1
1.5V
100
100.0
T J = 25C T J = 150C
10
T J = 150C 10.0
1 1.0 2.0
0.1
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IRF7338
2.0
N-Channel
I D = 6.3A
0.12
0.10
1.5
0.08
(Normalized)
VGS = 3.0V
1.0
0.04
0.5
0.02
V GS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature
( C)
0.05
80
60
0.04
Power (W)
0.03
40
ID = 6.3A
20
Time (sec)
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N-Channel
IRF7338
12 ID= 6.0A
1000
800
10 8 6 4 2 0
VDS= 12V
C, Capacitance (pF)
Ciss
600
Coss
400
200
Crss
0 1 10 100
0.0
2.0
4.0
6.0
8.0
10.0
12.0
100
D = 0.50
(Z thJA)
0.20 10 0.10
Thermal Response
0.05
J = P DM x Z thJA
0.1 0.00001
0.0001
0.001
0.01
0.1
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IRF7338
7.0
N-Channel
VDS
6.0
RD
VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
5.0
-VDD
4.0
3.0
2.0
1.0
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
QG
VGS
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
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P-Channel
IRF7338
VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP
100
10
VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP
100
10
-1.5V
1
-1.5V
1
100
100.0
-I D, Drain-to-Source Current ( A)
10.0 T J = 150C
10
T J = 25C T J = 150C
1.0 T J = 25C
1 1.0 2.0
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IRF7338
2.0
P-Channel
I D = -3.0A
0.20 0.18 0.16 0.14 0.12 0.10 VGS = -4.5V 0.08 0.06 0 2 4 6 8 10 12 14 -I D , Drain Current (A)
1.5
(Normalized)
1.0
VGS = -2.7V
0.5
V GS = -4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature
( C)
0.12
80
60
0.10
Power (W)
0.08
40
ID = -3.0A
20
Time (sec)
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P-Channel
800
IRF7338
ID= -2.9A
600
C, Capacitance (pF)
Ciss
400
200
Coss Crss
0 1 10 100
10
100
D = 0.50
(Z thJA)
0.20 10 0.10
Thermal Response
0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 +TA 1 10
J = P DM x Z thJA
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IRF7338
3.0
VDS
2.4
RD
VGS RG
D.U.T.
+
1.8
VGS
Pulse Width 1 s Duty Factor 0.1 %
1.2
td(on)
tr
t d(off)
tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90% VDS
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
10
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D.U.T.
VDS
VDD
IRF7338
SO-8 Package Details
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
5 H 0.25 [.010] A
c D E e e1 H
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
K L y
e1
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 C A B
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
8X 1.78 [.070]
IRF7338
SO-8 Tape and Reel
TERMINAL NUMBER 1
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.6/03
12
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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.