2

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(a) Which dimension(s) and/or doping concentration(s) affect BVceo and Early voltage? (b) Which processing step you need to modify in order to manufacture transistors with different breakdown voltages on the same chip? What processing parameters can you modify? (c) Assume the doping concentration of the emitter poly is 5x1019 cm-3. Sketch a Gummel plot (IC and IB vs. VBE) of this BJT transistor. If the doping concentration of the emitter poly is increased to 1x1020 cm-3, sketch another Gummel plot alongside the previous plot. Explain the differences between these two Gummel plots. (d) Sketch an fT and fmax vs. log(IC) for this BJT transistor. If the base poly (p+ POLY) thickness is doubled, sketch the new fT and fmax vs. log(IC) curves alongside the previous ones. Justify your sketch. (e) If the transistor maximum current density were fixed, how would you modify the device process in order to obtain a high maximum oscillation frequency, fmax? Explain why.

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 The collector current (IC) measured versus VBE at two different temperatures (25oC and 75oC) of the BJT transistor (The curves are part of Gummel plot) is shown in the following figure. Explain the observed behavior of this transistor using your device knowledge. You only need to explain the features in the VBE range of 0.40.8V. This is a normal and operative transistor.
10 10 I (A) 10 10 10 10
-1 -3

-5

-7

IC+25C IC+75C

-9

-11

0.2

0.4

0.6

0.8 V (V)
BE

1.2

1.4

The following two plots show measured fT and fmax of two BJT transistors. The base and emitter of these two transistors are exactly the same (same doping concentrations and thicknesses). Both of them have an emitter area of 0.15x10m2. The only difference between these two transistors is the collector. The left one has a breakdown voltage of BVceo=3.8V and the right one has a breakdown voltage of BVceo=6V. Explain the differences between the measured fT and fmax curves from these two transistors.

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 Relate the gate length modulation effect to the fmax of MOSFET.

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