Ir 2010

Data Sheet No.
PD60195-E
IR2010(S)(TR) & (PbF)

Features

Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground 5V offset CMOS Schmitt-triggered inputs with pull-down Shut down input turns off both channels Matched propagation delay for both channels Outputs in phase with inputs Also available LEAD-FREE
HIGH AND LOW SIDE DRIVER

Product Summary
VOFFSET IO+/VOUT ton/off Delay Matching 200V max. 3.0A / 3.0A typ. 10 - 20V 95 & 65 ns typ. 15 ns max.
Applications
Audio Class D amplifiers High power DC-DC SMPS converters Other high frequency applications
Packages
Description
The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
14-Lead PDIP
16-Lead SOIC
Typical Connection
HO V DD HIN SD LIN VSS VCC VDD HIN SD LIN VSS V CC COM LO VB VS
200V
TO LOAD
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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IR2010(S)(TR) & (PbF)

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Absolute Maximum Ratings
Symbol
VB VS VHO VCC VLO VDD VSS VIN dVs/dt PD RTHJA TJ TS TL
Definition
High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side fixed supply voltage Low side output voltage Logic supply voltage Logic supply offset voltage Logic input voltage (HIN, LIN & SD) Allowable offset supply voltage transient (figure 2) Package power dissipation @ TA +25C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (14 lead DIP) (16 lead SOIC) (14 lead DIP) (16 lead SOIC)
Min.
-0.3 VB - 25 V S - 0.3 -0.3 -0.3 -0.3 VCC - 25 V SS - 0.3 -55
Max.
225 VB + 0.3 VB + 0.3 25 VCC + 0.3 VSS + 25 VCC + 0.3 VDD + 0.3 50 1.6 1.25 75 100 150 150 300
Units
V/ns W C/W
Recommended Operating Conditions

Symbol
VB VS VHO VCC VLO VDD VSS VIN TA
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in figures 24 and 25.
Definition
High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Low side fixed supply voltage Low side output voltage Logic supply voltage Logic supply offset voltage Logic input voltage (HIN, LIN & SD) Ambient temperature
Min.
VS + 10 Note 1 VS 10 0 V SS + 3 -5 (Note 2) VSS -40
Max.
VS + 20 200 VB 20 VCC VSS + 20 5 VDD 125
Units
Note 1: Logic operational for VS of -4 to +200V. Logic state held for VS of -4V to -VBS. Note 2: When VDD < 5V, the minimum VSS offset is limited to -VDD. (Please refer to the Design Tip DT97-3 for more details).
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IR2010(S)(TR) & (PbF)

Dynamic Electrical Characteristics
VBIAS (VCC , V BS, V DD ) = 15V, CL = 1000 pF, TA = 25C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
ton toff tsd tr tf MT
Definition
Turn-on propagation delay Turn-off propagation delay Shutdown propagation delay Turn-on rise time Turn-off fall time Delay matching, HS & LS turn-on/off
Figure Min. Typ. Max. Units Test Conditions

7 8 9 10 11 6 50 30 35 95 65 70 10 15 135 105 105 20 25 15 V S = 0V VS = 200V VS = 200V
ns
VBIAS (V CC, VBS, V DD) = 15V, TA = 25C and VSS = COM unless otherwise specified. The VIN , VTH and IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Static Electrical Characteristics
Symbol
VIH VI L VIH VI L V OH VOL ILK IQBS IQCC IQDD IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+ IO-
Definition
Logic 1 input voltage Logic 0 input voltage Logic 1 input voltage Logic 0 input voltage High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent V CC supply current Quiescent V DD supply current Logic 1 input bias current Logic 0 input bias current VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold Output high short circuit pulsed current Output low short circuit pulsed current
Figure Min. Typ. Max. Units Test Conditions

12 13 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 9.5 2 7.5 7.0 7.5 7.0 2.5 2.5 70 100 1 20 8.6 8.2 8.6 8.2 3.0 3.0 6.0 1 1.0 0.1 50 210 230 5 40 1.0 9.7 9.4 9.7 9.4 A VO = 0V, VIN = VDD PW 10 s VO = 15V, VIN = 0V PW 10 s V A V V DD = 15V VDD = 3.3V IO = 0A IO = 0A VB=VS = 200V VIN = 0V or VDD VIN = 0V or VDD VIN = 0V or VDD V IN = VDD V IN = 0V
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IR2010(S)(TR) & (PbF)

Functional Block Diagram
VB VDD UV DETECT LEVEL SHIFT CIRCUIT UV Q S R VS
HO
HIN
VSS /COM LEVEL SHIFT
SD UV DETECT
VCC
LIN
VSS /COM LEVEL SHIFT
LO DELAY
VSS
COM
Lead Definitions
VDD HIN SD LIN VSS VB HO VS VCC LO COM
Symbol Description
Logic supply Logic input for high side gate driver output (HO), in phase Logic input for shutdown Logic input for low side gate driver output (LO), in phase Logic ground High side floating supply High side gate drive output High side floating supply return Low side supply Low side gate drive output Low side return
Lead Assignments
14 Lead PDIP
16 Lead SOIC (Wide Body)
IR2010
4
Part Number
IR2010S
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IR2010(S)(TR) & (PbF)

HV =10 to 200V
HIN LIN
SD
<50 V/ns
HO LO
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
HIN LIN
(0 to 200V)
50%
50%
ton
tr 90%
toff 90%
tf
HO LO
10%
10%
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
HIN LIN
50%
50%
50%
SD
tsd
LO
HO
10%
HO LO
90%
MT 90%
MT
LO
Figure 5. Shutdown Waveform Definitions
HO
Figure 6. Delay Matching Waveform Definitions
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IR2010(S)(TR) & (PbF)
250
Turn-on Time (nS)
20 5 Turn-on Time (nS) 20 0
max
200
max
150
10 5
typ
100
10 0 5 0 0 -0 5
typ
50
-5 2
2 5
5 0
7 5
10 0
15 2
10
12
14
16
18
20
Tmra r (C ep t e ) eu
VCC/VBS Supply Voltage (V)
Figure 7A. Turn-on Time vs. Temperature

300 250 200
250
Figure 7B: Turn-on Time vs. /VBS Voltage Figure 7B. Turn-on Time vs. VCCVoltage
Turn-off Time (nS)
Turn-on Time (nS)
200
max
150
max
150 100
100
typ
50 0 0 2 4 6 8 10 12 14 16 18 20
typ
50
0 -50
-25
25
50
75
100
125
VDD Supply Voltage (V)
Temperature (C)
Figure 7C: Turn-on Time vs. Voltage Figure 7C. Turn-on Time vs VDD Voltage
250
300 250
Figure 8A: Turn-off Time vs. Temperature Figure 8A. Turn-off Time vs. Temperature
200
Turn-off Time (nS)
Turn-off Time (nS)
200 150
150
max
100
max
100 50 0
50
typ
typ
0 10 12 14 16 18 20
10
12
14
16
18
20
Vdd Supply Voltage (V)
Figure 8B. Turn-off Time vs. VCC/V BS Voltage
Figure 8B: Turn-off Time vs. Voltage
Figure 8C. Turn-off Time vs. VDD Voltage
Figure 8C: Turn-off Time vs. Voltage
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IR2010(S)(TR) & (PbF)
250
250
Shutdown Time (nS)
max
150
Shutdown Time (nS)
200
200
150
max
100
100
typ
50
50
typ
0 -50 -25 0 25 50 75 100 125
0 10 12 14 16 18 20
Temperature (C)
Figure 9A. Shutdown Time vs. Temperature

300 250
Figure 9B. Shutdown Time vs. VCC/V BSVoltage

40
Turn-on Rise Time (nS)
Shutdown Time (nS)
30
200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20
max
20
10
typ
0 -50 -25 0 25 50 75 100 125
VDD Supply Voltage (V)
Temperature (C)
Figure 9C. Shutdown Time vs VDD Voltage

40
Figure 10A. Turn-on Rise Time vs. Temperature

40
Turn-on Rise Time (nS)
S) Turn-off Fall Time (nS)
30
max
30
max
20
20
10
typ
10
typ
0 10 12 14 16 18 20
0 -50 -25 0 25 50 75 100 125
VBIAS Supply Voltage (V)
Figure 10B. Turn-on Rise Time vs. VBIAS (V CC=VBS =VDD) Voltage
Temperature (C)
Figure 11A. Turn-off Fall Time vs. Temperature
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IR2010(S)(TR) & (PbF)

40
15
30
max
20
Logic 1 Input Threshold (V)
Turn-off Fall Time (nS)
12
min
typ
10
0 10 12 14 16 18 20
0 -50 -25 0 25 50 75 100 125
Temperature (C)
Figure 11B. Turn-Off Fall Time vs. VBIAS (VCC=VBS=VDD) Voltage

15
Figure 12A. Logic 1 Input Threshold vs. Temperature

15
Logic 1 Input Threshold (V))
12
12
max
min
0 0 2 4 6 8 10 12 14 16 18 20
0 -50 -25 0 25 50 75 100 125
VDD Logic Supply Voltage (V)
Temperature (C)
Figure 12B. Logic 1 Input Threshold vs. V DD Voltage

15
Figure 13A. Logic 0 Input Threshold vs. Temperature

5
High Level Output (V)
12
max
max
1
0 0 2 4 6 8 10 12 14 16 18 20
0 -50 -25 0 25 50 75 100 125
VDD Logic Supply Voltage (V)
Temperature (C)
Figure 13B. Logic 0 Input Threshold vs. VDD Voltage
Figure 14A. High Level Output vs. Temperature
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IR2010(S)(TR) & (PbF)

5
1.0
High Level Output (V)
Low Level Output (V) Low Level Output (V)
0.8
0.6
0.4
max
1
0.2
max
0 10 12 14 16 18 20
0.0 -50 -25 0 25 50 75 100 125
Temperature (C)
Figure 14B. High Level Output vs. V BIAS Voltage

1.0
Figure 15A. Low Level Output vs. Temperature

300
Low Level Output (V)
0.8
Offset Supply Current (uA) Offset Supply Current (uA)
200
0.6
0.4
max
100
0.2
max
0.0 10 12 14 16 18 20
0 -50 -25 0 25 50 75 100 125
Temperature (C)
Figure 15B. Low Level Output vs. VBIAS Voltage

100
Figure 16A. Offset Supply Current vs. Temperature

500
Offset Supply Current (uA)
VBS Supply Current (uA)
80
400
60
max
40
300
max
200
20
100
typ
0 0 20 40 60 80 100 120 140 160 180 200
0 -50 -25 0 25 50 75 100 125
Offset Supply Voltage (V)
Temperature (C)
Figure 16B. Offset Supply Current vs. Offset Voltage
Figure 17A. Vbs Supply Current vs. Temperature
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IR2010(S)(TR) & (PbF)

500
500
VBS Supply Current (uA)
VCC Supply Current (uA)
400
400
300
300
200
max
200
max
100
100
typ
0 10 12 14 16 18 20
0 -50 -25 0
typ
25 50 75 100 125
VBS Floating Supply Voltage (V)
Temperature (C)
Figure 17B. Vbs Supply Current vs. VBS Voltage

500
Figure 18A. Vcc Supply Current vs. Temperature

20
VCC Supply Current (uA)
VDD Supply Current (uA)
400
15
300
10
200
max
max
5
100
typ
0 10 12 14 16 18 20
0 -50 -25 0
typ
25 50 75 100 125
VCC Voltage (V)
Temperature (C)
Figure 18B. Vcc Supply Current vs. VCC Voltage

10
Figure 19A. Vdd Supply Current vs. Temperature

100
VDD Supply Current (uA)
Logic 1 Input Current (uA)
80
max
60
max
40
20
typ
0 2 4 6 8 10
typ
12 14 16 18 20
0 -50 -25 0 25 50 75 100 125
VDD Voltage (V)
Temperature (C)
Figure 19B. Vdd Supply Current vs. V DD Voltage
Figure 20A. Logic 1 Input Current vs. Temperature
10
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IR2010(S)(TR) & (PbF)

100
5.0
80
4.0
60
3.0
40
2.0
max
20
1.0
max
typ
0 2 4 6 8 10 12 14 16 18 20
0.0 -50 -25 0 25 50 75 100 125

V DD Voltage (V)
Temperature (C)
Figure 20B. Logic 1 Input Current vs. VDD Voltage

5.0
Figure 21A. Logic 0 Input Current vs. Temperature

11.0
VBS Undervoltage Lockout + (V)
4.0
10.0
Max.
3.0
9.0
Typ.
2.0
8.0
Min.
max
1.0
7.0
0.0 2 4 6 8 10 12 14 16 18 20
6.0 -50 -25 0 25 50 75 100 125
VDD Voltage (V)
Temperature (C)
Figure 21B. Logic 0 Input Current vs. VDD Voltage

11.0
Figure 22. VBS Undervoltage (+) vs. Temperature

11.0
VCC Undervoltage Lockout + (V)
10.0 VBS Undervoltage Lockout - (V)

Max.
10.0
Max.
9.0
9.0
Typ.
Typ.
8.0
8.0
Min.
7.0
Min.
7.0
6.0 -50 -25 0 25 50 75 100 125 Temperature (C)
6.0 -50 -25 0 25 50 75 100 125 Temperature (C)
Figure 23. VBS Undervoltage (-) vs. Temperature
Figure 24. VCC Undervoltage (+) vs. Temperature
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11
IR2010(S)(TR) & (PbF)

11.0
5.0
Vcc Undervoltage Lockout - (V)
10.0
Max.
Output Source Current (uA)
4.0
typ
3.0
9.0
8.0
Typ.
min
2.0
7.0
Min.
1.0
6.0 -50 -25 0 25 50 75 100 125 Temperature (C)
0.0 -50 -25 0 25 50 75 100 125
Temperature (C)
Figure 25. VCC Undervoltage (-) vs. Temperature

5.0
Figure 26A. Output Source Current vs. Temperature

5.0
Output Source Current (uA)
Output Sink Current (uA)
4.0
4.0
typ
3.0
3.0
typ
2.0
2.0
min
min
1.0
1.0
0.0 10 12 14 16 18 20
0.0 -50 -25 0 25 50 75 100 125
Vbias Supply Voltage (V)
Temperature (C)
Figure Output Source Current vs. VBIAS Voltage Figure 26B.26B: Output Source Current vs. Voltage
5.0
Figure 27A. Output Sink Current vs. Temperature

200V 150.00
Junction Temperature (C)
Output Sink Current (uA)
4.0
125.00 100.00
100V
3.0
typ
10V 75.00 50.00 25.00 0.00
2.0
min
1.0
0.0 10 12 14 16 18 20
1.E+03
1.E+04 1.E+05 Frequency (Hz)
1.E+06
Vbias Supply Voltage (V)
Figure 27B. Output Sink Current vs. VBIAS Voltage
Figure 28. IR2010 Tj vs Frequency RGATE = 10 Ohm, Vcc = 15V with IRFPE50
12
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IR2010(S)(TR) & (PbF)

150.00 Junction Temperature (C) 125.00
150.00 Junction Temperature (C) 125.00 100.00 75.00 50.00 25.00 0.00
1.E+04 1.E+05 1.E+06
200V
100.00 75.00 50.00 25.00 0.00
1.E+03
200V 100V 10V
100V 10V
1.E+03
1.E+04
1.E+05
1.E+06
Frequency (Hz)
Frequency (Hz)
Figure 29. IR2010 Tj vs Frequency RGATE = 16 Ohm, Vcc = 15V with IRFBC40
Figure 29: IR2010 Tj vs Frequency
200V
150.00 125.00 100.00 75.00
150.00
100V
125.00 10V 100.00 75.00 50.00 25.00 0.00
200V 100V 10V
50.00 25.00 0.00

1.E+03 1.E+04 1.E+05 1.E+06
1.E+03
1.E+04
1.E+05
1.E+06
Frequency (Hz)
Frequency (Hz)
Figure 32. IR2010S Tj vs Frequency RGATE = 10 Ohm, Vcc = 15V with IRFPE50
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13
IR2010(S)(TR) & (PbF)

150.00 125.00 100.00 75.00 50.00 25.00 0.00
1.E+03 1.E+04 1.E+05 1.E+06
150.00
200V
100V 10V
125.00 100.00 75.00 50.00 25.00 0.00

1.E+03 1.E+04 1.E+05
200V 100V 10V
1.E+06
Frequency (Hz)
Frequency (Hz)
Figure 33. IR2010S Tj vs Frequency RGATE = 16 Ohm, Vcc = 15V with IRFBC40
150.00 125.00
200V
100.00 75.00 50.00 25.00 0.00
1.E+03 1.E+04 1.E+05 1.E+06
100V 10V
Frequency (Hz) Frequency (Hz)
14
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IR2010(S)(TR) & (PbF)

Case Outlines
14 Lead PDIP
01-6010 01-3002 03 (MS-001AC)
16 Lead SOIC (wide body)

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01 6012 01-3014 03 (MS-013AA)
15
IR2010(S)(TR) & (PbF)

Tape and Reel Details: SOIC8N
LOADED TAPE FEED DIRECTION
D F C
NOTE : CONTROLLING DIMENSION IN MM
E G
CARRIER TAPE DIMENSION FOR 8SOICN Metric Code Min Max A 7.90 8.10 B 3.90 4.10 11.70 12.30 C D 5.45 5.55 E 6.30 6.50 F 5.10 5.30 G 1.50 n/a 1.50 1.60 H
Imperial Min 0.311 0.153 0.46 0.214 0.248 0.200 0.059 0.059
Max 0.318 0.161 0.484 0.218 0.255 0.208 n/a 0.062
D C E B A
REEL DIMENSIONS FOR 8SOICN Metric Code Min Max 329.60 330.25 A B 20.95 21.45 C 12.80 13.20 1.95 2.45 D 98.00 102.00 E F n/a 18.40 G 14.50 17.10 H 12.40 14.40
Imperial Min Max 12.976 13.001 0.824 0.844 0.503 0.519 0.767 0.096 3.858 4.015 n/a 0.724 0.570 0.673 0.488 0.566
16
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IR2010(S)(TR) & (PbF)
LEADFREE PART MARKING INFORMATION

Part number
IRxxxxxx YWW? ?XXXX

Lot Code (Prod mode - 4 digit SPN code) IR logo
Date code
Pin 1 Identifier ? P MARKING CODE Lead Free Released Non-Lead Free Released
Assembly site code Per SCOP 200-002
ORDER INFORMATION
Basic Part (Non-Lead Free) 14-Lead PDIP IR2010 order IR2010 16-Lead SOIC IR2010S order IR2010S Leadfree Part 14-Lead PDIP IR2010 order IR2010PbF 16-Lead SOIC IR2010S order IR2010SPbF 16-Lead SOIC IR2010STR order IR2010STRPbF
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 This product has been qualified per industrial level Data and specifications subject to change without notice. 9/12/2004
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17

Ir 2010

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Data Sheet No.

IR2010(S)(TR) & (PbF)

HIGH AND LOW SIDE DRIVER

IR2010(S)(TR) & (PbF)

Absolute Maximum Ratings

Recommended Operating Conditions

IR2010(S)(TR) & (PbF)

Figure Min. Typ. Max. Units Test Conditions

Static Electrical Characteristics

Figure Min. Typ. Max. Units Test Conditions

IR2010(S)(TR) & (PbF)

VSS /COM LEVEL SHIFT

VSS /COM LEVEL SHIFT

16 Lead SOIC (Wide Body)

IR2010(S)(TR) & (PbF)

Figure 1. Input/Output Timing Diagram

Figure 2. Floating Supply Voltage Transient Test Circuit

Figure 3. Switching Time Test Circuit

Figure 4. Switching Time Waveform Definition

Figure 6. Delay Matching Waveform Definitions

IR2010(S)(TR) & (PbF)

Turn-on Time (nS)

20 5 Turn-on Time (nS) 20 0

VCC/VBS Supply Voltage (V)

Figure 7A. Turn-on Time vs. Temperature

Turn-off Time (nS)

Turn-on Time (nS)

VDD Supply Voltage (V)

Turn-off Time (nS)

Turn-off Time (nS)

VCC/VBS Supply Voltage (V)

Vdd Supply Voltage (V)

Figure 8B. Turn-off Time vs. VCC/V BS Voltage

Figure 8B: Turn-off Time vs. Voltage

Figure 8C. Turn-off Time vs. VDD Voltage

Figure 8C: Turn-off Time vs. Voltage

IR2010(S)(TR) & (PbF)

Shutdown Time (nS)

Shutdown Time (nS)

0 -50 -25 0 25 50 75 100 125

VCC/VBS Supply Voltage (V)

Figure 9A. Shutdown Time vs. Temperature

Figure 9B. Shutdown Time vs. VCC/V BSVoltage

Turn-on Rise Time (nS)

Shutdown Time (nS)

200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20

VDD Supply Voltage (V)

Figure 9C. Shutdown Time vs VDD Voltage

Figure 10A. Turn-on Rise Time vs. Temperature

Turn-on Rise Time (nS)

S) Turn-off Fall Time (nS)

0 -50 -25 0 25 50 75 100 125

VBIAS Supply Voltage (V)

Figure 11A. Turn-off Fall Time vs. Temperature

IR2010(S)(TR) & (PbF)

Logic 1 Input Threshold (V)

Turn-off Fall Time (nS)

0 -50 -25 0 25 50 75 100 125

VBIAS Supply Voltage (V)

Figure 11B. Turn-Off Fall Time vs. VBIAS (VCC=VBS=VDD) Voltage

Figure 12A. Logic 1 Input Threshold vs. Temperature

Logic 1 Input Threshold (V))