ae 1 (a) iste : ny (T=3e0k) = Leb -/0°(300)"" exp] ~@ebeV) 2013810 %) (Beek) = 2.50" cur? sBy ny (T=600&) = 1.66 +10" (600). ox {0.66eV) 2139 O' HM be0k) | = Atbri0'Ccmr? Com aring these results with these tn Example: hy (Ge @ 300k) 2 2315 hi (Ge@book) |. Ts hi (Si @ 300k) ni (S@ be0k) At higher temperature, the &xponential terns approaches oe, which TmplieS that np T% independent of Banelgap energy , Fy. (by For sity clped material np = nz? Assiunin at Tico k i i ie 510 cng? n= [ne(T-»06)]/p = (250% m3) = 125-10? 5-10"cm2 (0) Mobili of elections in Sp > [B50 Orns Mobittty of holes in Si = 480 on/y-s > velocity of electrons = Line =/290 un) Oly velavity of electrons AnE (1990 Fs) = (35-10% m/s velocity of holes = pe 3 2) vs mt) = 45-10? ms (b) Given E=ot Yun hole. conent neql gible Mn= 1290 Ofv-s bp = 480 CHr/ies Ter = LA Lum = 4 lune + ppE| % dlgnE eens Tee = Alun? GME (Lew NGD othe OL Yn) = £6 -10 om?3. Given L=otum fA (6 Sum) Vz LV Un? B50 Otfes lip = 480 Os nese! om (Assuming n-type depart) (a) Wi(T=200k) = 9210" "(300)" ea, 2(t eae = 108 10 Cw prreln = 1710? Cm? E=%/ = 10% oo Lap = A Stor = fa ple “fh alan ag MmJIE = (65un} (b16"C) | Dxpcie (00 bw}. Ae oo (.i)0%, vs ve (12 Yon) > In = 0.054 mA