R. C. Jaeger and T. N.

Blalock
08/09/10
1
Microelectronic Circuit Design
Fourth Edition - Part I
Solutions to Exercises

CHAPTER 1

Page 11


V
LSB
=
5.12V
2
10
bits
=
5.12V
1024bits
= 5.00 mV V
MSB
=
5.12V
2
= 2.560V
1100010001
2
= 2
9
+ 2
8
+ 2
4
+ 2
0
= 785
10
V
O
= 785 5.00mV
( )
= 3.925 V
or V
O
= 2
1
+ 2
2
+ 2
6
+ 2
10
( )
5.12V = 3.925 V

Page 12


V
LSB
=
5.0V
2
8
bits
=
5.00V
256bits
=19.53 mV N =
1.2V
5.00V
256bits = 61.44bits
61= 32 +16 + 8 + 4 +1= 2
5
+ 2
4
+ 2
3
+ 2
2
+ 2
0
= 00111101
2

Page 12
The dc component is V
A
= 4V.
The signal consists of the remaining portion of v
A
: v
a
= (5 sin 2000t + 3 cos 1000 t) Volts.

Page 23


v
o
= 5cos 2000t + 25
o
( )
= 5sin 2000t + 25
o
90
o
( ) [ ]
= 5sin 2000t 65
o
( )
V
o
= 565
o
V
i
= 0.0010
o
A
v
=
565
o
0.0010
o
= 500065
o


Page 25


A
v
=
R
2
R
1
| 5 =
R
2
10k
R
2
= 50 k

R. C. Jaeger and T. N. Blalock
08/08/10
2
Page 26


v
s
= 0.5sin 2000t
( )
+ sin 4000t
( )
+1.5sin 6000t
( ) [ ]
The three spectral component frequencies are f
1
=1000 Hz f
2
= 2000 Hz f
3
= 3000 Hz
a
( )
The gain of the band - pass filter is zero at both f
1
and f
3
. At f
2
, V
o
=10 1V
( )
=10V,
and v
o
=10.0sin 4000t
( )
volts.
b
( )
The gain of the low- pass filter is zero at both f
2
and f
3
. At f
2
, V
o
= 6 0.5V
( )
= 3V,
and v
o
= 3.00sin 2000t
( )
volts.

Page 27


39k 10.1
( )
R 39k 1+ 0.1
( )
or 35.1 k R 42.9 k
3.6k 10.01
( )
R 3.6k 1+ 0.01
( )
or 3.56 k R 3.64 k

Page 29


P =
V
I
2
R
1
+ R
2
P
nom
=
15
2
54k
= 4.17 mW
P
max
=
1.1x15
( )
2
0.95x54k
= 5.31 mW P
min
=
0.9x15
( )
2
1.05x54k
= 3.21 mW

Page 33


R =10k 1+
10
3
o
C
5525
( )
o
C





= 9.20 k R =10k 1+
10
3
o
C
8525
( )
o
C





=10.6 k

R. C. Jaeger and T. N. Blalock
08/09/10
3
CHAPTER 2

Page 47


n
i
= 2.31x10
30
K
3
cm
6
( )
300K
( )
3
exp
0.66eV
8.62x10
5
eV / K
( )
300K
( )








= 2.27x10
13
cm
3

Page 47


n
i
= 1.08x10
31
K
3
cm
6
( )
50K
( )
3
exp
1.12eV
8.62x10
5
eV / K
( )
50K
( )
|
|
|
|
|
|
|
|
= 4.34x10
39
cm
3
n
i
= 1.08x10
31
K
3
cm
6
( )
325K
( )
3
exp
1.12eV
8.62x10
5
eV / K
( )
325K
( )
|
|
|
|
|
|
|
|
= 4.01x10
10
cm
3
L
3
=
cm
3
4.34x10
39
10
2
m
cm
[
\
|

)
j
3
L = 6.13x10
10
m

Page 49


v
p
=
p
E = 500
cm
2
V s
10
V
cm






= 5.00x10
3
cm
s
v
n
=
n
E = 1350
cm
2
V s
1000
V
cm






= 1.35x10
6
cm
s
E =
V
L
=
1
2x10
4
V
cm
= 5.00x10
3
V
cm

Page 49


(a) From Fig. 2.5: The drift velocity for Ge saturates at 6x10
6
cm/ sec.
At low fields the slope is constant. Choose E =100 V/cm

n
=
v
n
E
=
4.3x10
5
cm/ s
100V / cm
= 4300
cm
2
s

p
=
v
p
E
=
2.1x10
5
cm/ s
100V / cm
= 2100
cm
2
s
b
( )
The velocity peaks at 2x10
7
cm/ sec

n
=
v
n
E
=
8.5x10
5
cm/ s
100V / cm
= 8500
cm
2
s

R. C. Jaeger and T. N. Blalock
08/08/10
4
Page 51


n
i
2
=1.08x10
31
400
( )
3
exp
1.12
8.62x10
5
400
( )








= 5.40x10
24
/ cm
6
| n
i
= 2.32x10
12
/ cm
3
=
1

=
1
1.60x10
19
2.32x10
12
( )
1350
( )
+ 2.32x10
12
( )
500
( )
[ ]
=1450 cm
n
i
2
=1.08x10
31
50
( )
3
exp
1.12
8.62x10
5
50
( )








=1.88x10
77
/ cm
6
| n
i
= 4.34x10
39
/ cm
3
=
1

=
1
1.60x10
19
4.34x10
39
( )
6500
( )
+ 4.34x10
39
( )
2000
( )
[ ]
=1.69x10
53
cm

Page 55


n
i
2
=1.08x10
31
400
( )
3
exp
1.12
8.62x10
5
400
( )








= 5.40x10
24
/ cm
6
p = N
A
N
D
=10
16
2x10
15
= 8x10
15
holes
cm
3
n =
n
i
2
p
=
5.40x10
24
8x10
15
= 6.75x10
8
electrons
cm
3

Antimony (Sb) is a Column - V element, so it is a donor impurity. n = N
D
= 2x10
16
electrons
cm
3
p =
n
i
2
n
=
10
20
2x10
16
= 5.00x10
3
holes
cm
3
n > p n - type silicon

Page 56
Reading from the graph for N
T
= 10
16
/cm
3
, 1230 cm
2
/V-s and 405 cm
2
/V-s.
Reading from the graph for N
T
= 10
17
/cm
3
, 800 cm
2
/V-s and 230 cm
2
/V-s.

R. C. Jaeger and T. N. Blalock
08/09/10
5
Page 58


=1000 =1.60x10
19

n
n u
n
n = 6.25x10
21
/ cm
3
= 6.25x10
19
( )
100
( )
| =
1

= 0.001 cm

(a) N
D
= 2x10
16
/ cm
3
| N
A
= 0/ cm
3
| N
T
= 2x10
16
/ cm
3
|

n
= 92 +
1270
1+
2x10
16
1.3x10
17






0.91
=1170 cm
2
/ V s |
p
= 48 +
447
1+
2x10
16
6.3x10
16






0.76
= 363 cm
2
/ V s
(b) N
T
= N
D
+ N
A
= 2x10
16
/ cm
3
+ 3x10
16
/ cm
3
= 5x10
16
/ cm
3

n
= 92 +
1270
1+
5x10
16
1.3x10
17






0.91
= 990 cm
2
/ V s |
p
= 48 +
447
1+
5x10
16
6.3x10
16






0.76
= 291 cm
2
/ V s

Page 59


Boron (B) is a Column - III element, so it is an acceptor impurity.
p = N
A
N
D
= 4x10
18
holes
cm
3
| n =
n
i
2
p
=
10
20
4x10
18
= 25
electrons
cm
3
| p - type material
N
T
=
4x10
18
cm
3
and mobilities from Fig. 2.8 :
n
=150 cm
2
/ V s |
p
= 70 cm
2
/ V s

1
q
p
p
=
1
1.60x10
19
4x10
18
( )
70
( )
= 0.022 cm
- - -
Indium (In) is a Column - III element, so it is an acceptor impurity.
p = N
A
N
D
= 7x10
19
holes
cm
3
| n =
n
i
2
p
=
10
20
7x10
19
=1.43
electrons
cm
3
| p - type material
N
T
=
7x10
19
cm
3
and mobilities from Fig. 2.8 :
n
=100 cm
2
/ V s |
p
= 50 cm
2
/ V s
=
1

=
1
1.60x10
19
7x10
19
( )
50
( )
=1.79 mcm

R. C. Jaeger and T. N. Blalock
08/08/10
6
Page 60


V
T
=
kT
q
=
1.38x10
23
50
( )
1.602x10
19
= 4.31 mV | V
T
=
1.38x10
23
300
( )
1.602x10
19
= 25.8 mV
V
T
=
1.38x10
23
400
( )
1.602x10
19
= 34.5mV

D
n
=
kT
q

n
= 25.8mV 1362
cm
2
V s





= 35.1
cm
2
s
| D
p
=
kT
q

p
= 25.8mV 495
cm
2
V s





=12.8
cm
2
s

j
n
= qD
n
dn
dx
=1.60x10
19
C 20
cm
2
s






10
16
cm
3
m






10
4
m
cm





= 320
A
cm
2
j
p
= qD
p
dp
dx
= 1.60x10
19
C 4
cm
2
s






10
16
cm
3
m






10
4
m
cm





= 64
A
cm
2

R. C. Jaeger and T. N. Blalock
08/09/10
7
CHAPTER 3

Page 79

j
=V
T
ln
N
A
N
D
n
i
2





= 0.025V ln
2x10
18
10
20
( )
10
20








=1.05 V
w
do
=
2
s
q
1
N
A
+
1
N
D

j
=
2 11.7
( )
8.85x10
14
( )
1.60x10
19
1
2x10
18
+
1
10
20






1.05
( )
= 2.63x10
6
cm = 0.0263 m

Page 80


E
max
=
1

s
qN
A
x
p
0

dx =
qN
A
x
p

s
E
max
=
1

s
qN
D
0
x
n

dx =
qN
D
x
n

s
For the values in Ex.3.2 :
E
max
=
1.6x10
19
C 10
17
/ cm
3
( )
1.13x10
5
cm
( )
11.7 8.854x10
14
F / cm
( )
=175
kV
cm

E
max
=
2 1.05V
( )
2.63x10
6
cm
= 798
kV
cm

x
p
= 0.0263m 1+
2x10
18
10
20






1
= 0.0258 m x
n
= 0.0263m 1+
10
20
2x10
18






1
= 5.16x10
4
m

Page 83


n
kT
q
=1
1.381x10
23
300
( )
1.602x10
19
= 0.0259 | T =
300
1.03
= 291 K

Page 85


i
D
= 40x10
15
A exp
0.55
0.025
[
\
|

)
j
1
|
|
|
|
|
|
=143 A i
D
= 40x10
15
A exp
0.70
0.025
[
\
|

)
j
1
|
|
|
|
|
|
= 57.9 mA
V
D
= 0.025V
( )
ln 1+
6x10
3
A
40x10
15
A
[
\
|

)
j = 0.643 V

i
D
= 5x10
15
A exp
0.04
0.025
[
\
|

)
j
1
|
|
|
|
|
|
= 3.99 fA | i
D
= 5x10
15
A exp
2.0
0.025
[
\
|

)
j
1
|
|
|
|
|
|
= 5.00 fA

R. C. Jaeger and T. N. Blalock
08/08/10
8
Page 87


a
( )
V
BE
=V
T
ln 1+
I
D
I
S






= 0.025V ln 1+
40x10
6
A
2x10
15
A





= 0.593 V
V
BE
=V
T
ln 1+
I
D
I
S






= 0.025V ln 1+
400x10
6
A
2x10
15
A





= 0.651 V V
BE
= 57.6 mV
b
( )
V
BE
=V
T
ln 1+
I
D
I
S






= 0.0258V ln 1+
40x10
6
A
2x10
15
A





= 0.612 V
V
BE
=V
T
ln 1+
I
D
I
S






= 0.0258V ln 1+
400x10
6
A
2x10
15
A





= 0.671 V V
BE
= 59.4 mV

Page 89


ln
i
D
I
S






= ln i
D ( )
ln I
S ( )
| Assume i
D
is constant, and E
G
= E
GO
dv
D
dT
=
k
q
ln
i
D
I
S

kT
q
1
I
S
dI
S
dT
=
v
d
T
V
T
1
I
S
dI
S
dT
| I
S
= Kn
i
2
= KBT
3
exp
E
GO
kT






dI
S
dT
= 3KBT
2
exp
E
GO
kT






+ KBT
3
exp
E
GO
kT






+
E
GO
kT
2






1
I
S
dI
S
dT
=
3
T
+
E
GO
kT
2
=
3
T
+
qV
GO
kT
2
=
3
T
+
V
GO
V
T
T
|
dv
D
dT
=
v
d
T
V
T
1
I
S
dI
S
dT
=
v
d
V
GO
3V
T
T

Page 90


w
d
= 0.113m 1+
10V
0.979V
= 0.378 m | E
max
=
2 V +
j ( )
w
d
=
2 10.979V
( )
0.378x10
4
cm
= 581
kV
cm

I
S
=10 fA 1+
10V
0.8V
= 36.7 fA

Page 93


C
jo
=
11.7 8.854x10
14
F / cm
( )
0.113x10
4
cm
= 91.7
nF
cm
2
| C
j
0V
( )
= 91.7
nF
cm
2
10
2
cm
( )
1.25x10
2
cm
( )
=11.5 pF
C
j
5V
( )
=
11.5pF
1+
5V
0.979V
= 4.64 pF

C
D
=
10
5
A
0.025V
10
8
s = 4.00 pF | C
D
=
8x10
4
A
0.025V
10
8
s = 320 pF | C
D
=
5x10
2
A
0.025V
10
8
s = 0.02 F

R. C. Jaeger and T. N. Blalock
08/09/10
9
Page 98


Two points on the load line : V
D
= 0, I
D
=
5V
5k
=1 mA; I
D
= 0, V
D
= 5V
The intersection of the two curves occurs at the Q- pt : 0.88 mA, 0.6 V
( )

Page 100


10 =10
4
I
D
+V
D
| V
D
=V
T
ln 1+
I
D
I
S






| 10 =10
4
I
D
+ 0.025ln 1+
I
D
I
S







Page 101
fzero(@(id) (10-10000*id-0.025*log(1+id/1e-13), 5e-4)
ans = 9.4258e-004

Page 102
fzero(@(id) (10-10000*(1e-14)*(exp(40*vd)-1)-vd), 0.5)
ans = 0.6316

Page 109


From the answer, the diodes are on,on, off.
I
1
= I
D1
+ I
D2

10V - V
B
2.5k
=
V
B
0.6V 20V
( )
10k
+
V
B
0.6V 10V
( )
10k
= 0 V
B
=1.87 V
I
D1
=
1.87 0.6 20V
( )
10k
= 2.13 mA | I
D2
=
1.87 0.6 10V
( )
10k
=1.13 mA | V
D3
= 1.87 0.6
( )
= 1.27 V
I
D1
> 0, I
D2
> 0, V
D3
< 0. These results are consistent with the assumptions.

Page 111


R
min
=
5k
20
5
1
=1.67 k | V
O
= 20V
1k
5k+1k
= 3.33 V (V
Z
is off) | V
O
= 5 V (V
Z
is conducting)

Page 112


V
L
20V
1k
+
V
L
5V
0.1k
+
V
L
5k
= 0 V
L
= 6.25 V | I
Z
=
6.25V 5V
0.1k
=12.5mA
P
Z
= 5V 12.5mA
( )
+10012.5mA
( )
2
= 78.1 mW

Line Regulation =
0.1k
0.1k+ 5k
=19.6
mV
V
Load Regulation = 0.1k 5k= 98.0

R. C. Jaeger and T. N. Blalock
08/08/10
10
Page 118


V
dc
=V
P
V
on
= 6.3 2 1= 7.91 V I
dc
=
7.91V
0.5
=15.8 A V
r
=
I
dc
C
T =
15.8A
0.5F
1
60
s = 0.527 V
T =
1

2
V
r
V
P
=
1
2 60
( )
2
0.527V
8.91V






= 0.912 ms
c
=120 0.912ms
( )
180
o

=19.7
o

V
dc
=V
P
V
on
=10 2 1=13.1 V I
dc
=
13.1V
2
= 6.57 A C =
I
dc
V
r
T =
6.57A
0.1F
1
60
s =1.10 F
T =
1

2
V
r
V
P
=
1
2 60
( )
2
0.1V
14.1V






= 0.316 ms
c
=120 0.316ms
( )
180
o

= 6.82
o

Page 120


At 300K: V
D
=
kT
q
ln 1+
I
D
I
S






=
1.38x10
23
J / K 300K
( )
1.60x10
19
C
ln 1+
48.6A
10
15
A






= 0.994 V
At 50
o
C: V
D
=
kT
q
ln 1+
I
D
I
S






=
1.38x10
23
J / K 273K + 50K
( )
1.60x10
19
C
ln 1+
48.6A
10
15
A






=1.07 V
Note : For V
T
= 0.025V, V
D
=
kT
q
ln 1+
I
D
I
S






= 0.025V ln 1+
48.6A
10
15
A






= 0.961 V

Page 127


V
rms
=
V
dc
+V
on
2
=
15+1
2
=11.3 V | C =
I
dc
V
r
T =
2A
0.0115V
( )
1
60
s = 0.222F = 222, 000 F
I
SC
=CV
P
= 2 60Hz
( )
0.222F
( )
16V
( )
=1340 A
T =
1

2
V
r
V
P
=
1
2 60
( )
2
0.01
( )
15
( )
16
= 0.363 ms | I
P
= I
dc
2T
T
= 2A
2s
60 0.363ms
( )
=184 A

R. C. Jaeger and T. N. Blalock
08/09/10
11
CHAPTER 4

Page 153


K
n
'
=
n

ox
T
ox
= 500
cm
2
V s
3.9 8.854x10
14
F / cm
( )
25x10
7
cm
= 69.1x10
6
C
V
2
s
= 69.1
A
V
2
- - -
K
n
= K
n
'
W
L
= 50
A
V
2
20m
1m






=1000
A
V
2
K
n
= 50
A
V
2
60m
3m






=1000
A
V
2

K
n
= 50
A
V
2
10m
0.25m






= 2000
A
V
2
- - -
For V
GS
= 0V and 1V, V
GS
<V
TN
and the transistor is off. Therefore I
D
= 0.
V
GS
- V
TN
= 2 -1.5 = 0.5V and V
DS
= 0.1 V Triode region operation
I
D
= K
n
'
W
L
V
GS
V
TN

V
DS
2






V
DS
= 25
A
V
2
10m
1m






2 1.5
0.1
2






0.1V
2
=11.3 A
V
GS
- V
TN
= 3-1.5 =1.5V and V
DS
= 0.1 V Triode region operation
I
D
= K
n
'
W
L
V
GS
V
TN

V
DS
2






V
DS
= 25
A
V
2
10m
1m






31.5
0.1
2






0.1V
2
= 36.3 A
K
n
'
= 25
A
V
2
100m
1m






= 250
A
V
2

Page 154


R
on
=
1
K
n
'
W
L
V
GS
V
TN
( )
=
1
250
A
V
2
2 1
( )
= 4.00 k | R
on
=
1
250
A
V
2
4 1
( )
=1.00 k
V
GS
=V
TN
+
1
K
n
R
on
=1V +
1
250
A
V
2
2000
( )
= 3.00 V

R. C. Jaeger and T. N. Blalock
08/08/10
12
Page 157


V
GS
- V
TN
= 5-1= 4 V and V
DS
=10 V Saturation region operation
I
D
=
K
n
2
V
GS
V
TN ( )
2
=
1
2
mA
V
2
51
( )
2
V
2
= 8.00 mA
K
n
= K
n
'
W
L

W
L
=
1mA
40A
=
25
1
W = 25L = 8.75 m

Assuming saturation region operation,

I
D
=
K
n
2
V
GS
V
TN ( )
2
=
1
2
mA
V
2
2.51
( )
2
V
2
=1.13 mA
g
m
= K
n
V
GS
V
TN ( )
=1
mA
V
2
2.51
( )
V =1.50 mS
Checking: g
m
=
2I
D
V
GS
V
TN
2 1.125mA
( )
2.51
( )
V
=1.50 mS

Page 158


V
GS
- V
TN
= 5-1= 4 V and V
DS
=10 V Saturation region operation
I
D
=
K
n
2
V
GS
V
TN
( )
2
1+ V
DS
( )
=
1
2
mA
V
2
51
( )
2
V
2
1+ 0.02 10
( ) [ ]
= 9.60 mA
I
D
=
K
n
2
V
GS
V
TN
( )
2
1+ V
DS
( )
=
1
2
mA
V
2
51
( )
2
V
2
1+ 0 10
( ) [ ]
= 8.00 mA
- - -
V
GS
- V
TN
= 4 -1= 3 V and V
DS
= 5 V Saturation region operation
I
D
=
K
n
2
V
GS
V
TN
( )
2
1+ V
DS
( )
=
25
2
A
V
2
4 1
( )
2
V
2
1+ 0.01 5
( ) [ ]
=118 A
I
D
=
K
n
2
V
GS
V
TN
( )
2
1+ V
DS
( )
=
25
2
A
V
2
51
( )
2
V
2
1+ 0.0110
( ) [ ]
= 220 A

Page 159


Assuming pinchoff region operation, I
D
=
K
n
2
0 V
TN ( )
2
=
50
2
A
V
2
+2V
( )
2
=100 A
V
GS
=V
TN
+
2I
D
K
n
= 2V +
2 100 A
( )
50A/ V
2
= 4.00 V

Assuming pinchoff region operation, I

D
=
K
n
2
V
GS
V
TN ( )
2
=
50
2
A
V
2
1 2V
( ) [ ]
2
= 225 A

R. C. Jaeger and T. N. Blalock
08/09/10
13
Page 161


V
TN
=V
TO
+ V
SB
+ 0.6V 0.6V
( )
=1+ 0.75 0 + 0.6 0.6
( )
=1 V
V
TN
=1+ 0.75 1.5+ 0.6 0.6
( )
=1.51 V | V
TN
=1+ 0.75 3+ 0.6 0.6
( )
=1.84 V
- - -
a
( )
V
GS
is less than the threshold voltage, so the transistor is cut off and I
D
= 0.
b
( )
V
GS
- V
TN
= 2 -1=1 V and V
DS
= 0.5 V Triode region operation
I
D
= K
n
V
GS
V
TN

V
DS
2






V
DS
=1
mA
V
2
2 1
0.5
2






0.5V
2
= 375 A
(c) V
GS
- V
TN
= 2 -1=1 V and V
DS
= 2 V Saturation region operation
I
D
=
K
n
2
V
GS
V
TN
( )
2
1+ V
DS
( )
= 0.5
mA
V
2
2 1
( )
2
V
2
1+ 0.02 2
( ) [ ]
= 520 A

Page 163


a
( )
V
GS
is greater than the threshold voltage, so the transistor is cut off and I
D
= 0.
b
( )
V
GS
- V
TN
= -2 +1 =1 V and V
DS
= 0.5 V Triode region operation
I
D
= K
n
V
GS
V
TN

V
DS
2






V
DS
= 0.4
mA
V
2
2 +1
0.5
2






0.5
( )
V
2
=150 A
c
( )
V
GS
- V
TN
= 2 +1 =1 V and V
DS
= 2 V Saturation region operation
I
D
=
K
n
2
V
GS
V
TN
( )
2
1+ V
DS
( )
=
0.4
2
mA
V
2
2 +1
( )
2
V
2
1+ 0.02 2
( ) [ ]
= 208 A

R. C. Jaeger and T. N. Blalock
08/08/10
14
Page 167


C
GC
= 200
F
m
2






5x10
6
m
( )
0.5x10
6
m
( )
= 0.500 fF
Triode region : C
GD
= C
GS
=
C
GC
2
+ C
GSO
W = 0.25 fF + 300
pF
m






5x10
6
m
( )
=1.75 fF
Saturation region : C
GS
=
2
3
C
GC
+ C
GSO
W = 0.333 fF + 300
pF
m






5x10
6
m
( )
=1.83 fF
C
GD
= C
GSO
W = 300
pF
m






5x10
6
m
( )
=1.50 fF

Page 169


KP = K
n
=150U | LAMBDA= = 0.0133 | VTO =V
TN
=1 | PHI = 2
F
= 0.6
W =W =1.5U | L = L = 0.25U

Page 170


Circuits/cm
2

2
=
1m
0.25m






2
=16
Power - Delay Product
1

3
=
1
4
3
=
1
64
64 times improvement

Page 171


i
D
*
=
n

ox
T
ox
/
W /
L/
v
GS
V
TN

v
DS
2






v
DS
= i
D
| P
*
=V
DD
i
D
*
=V
DD
i
D
( )
= P
P
*
A
*
=
P
W /
( )
L/
( )
=
3
P
A

a
( )
f
T
=
1
2
500cm
2
/ V s
10
4
cm
( )
2
1V
( )
= 7.96 GHz | b
( )
f
T
=
1
2
500cm
2
/ V s
0.25x10
4
cm
( )
2
1V
( )
=127 GHz

V
L
10
5
V
cm
L = 10
5
V
cm






10
4
cm
( )
=10 V | L = 10
5
V
cm






10
5
cm
( )
=1 V

R. C. Jaeger and T. N. Blalock
08/09/10
15
Page 172


a
( )
From the graph for V
GS
= 0.25 V, I
D
10
18
A |
b
( )
From the graph for V
GS
=V
TN
0.5 V, I
D
3x10
15
A
c
( )
I = 10
9
transistors
( )
3x10
-15
A/transistors
( )
= 3 A

Page 176


Active area =10 12
( )
=120
2
=120 0.125m
( )
2
=1.88 m
2
L = 2 = 0.250 m | W =10 =1.25 m
Gate area = 2 10
( )
= 20
2
= 20 0.125m
( )
2
= 0.313 m
2

Transistor area = 10+ 2+ 2
( )
12+ 2+ 2
( )
= 224
2
= 224 0.125m
( )
2
= 3.50 m
2
N =
10
4
m
( )
2
3.50m
2
= 28.6 x 10
6
transistors

Page 180


Assume saturation region operation and = 0. Then I
D
is indpendent of V
DS
, and I
D
= 50 A.
V
DS
=V
DD
I
D
R
D
=10 50k 50A
( )
= 7.50 V. V
DS
V
GS
V
TN
, so our assumption was correct.
Q- Point = 50.0 A, 7.50 V
( )
- - -
V
EQ
=
270k
270k+ 750k
10V = 2.647 V | R
EQ
= 270k 750k | Assume saturation region.
I
D
=
25x10
6
2
A
V
2
2.647 1
( )
2
V
2
= 33.9 A | V
DS
=V
DD
I
D
R
D
=10 100k 33.9A
( )
= 6.61 V.
V
DS
V
GS
V
TN
, so our assumption was correct. Q- Point = 33.9 A, 6.61 V
( )
- - -
V
GS
does not change : V
GS
= 3.00 V | I
D
=
30x10
6
2
A
V
2
31
( )
2
V
2
= 60.0 A
V
DS
=V
DD
I
D
R
D
=10 100k 60.0A
( )
= 4.00 V. V
DS
V
GS
V
TN
, so our assumption was correct.
Q- Point = 60.0 A, 4.00 V
( )

R. C. Jaeger and T. N. Blalock
08/08/10
16
Page 181


V
GS
does not change : V
GS
= 3.00 V | I
D
=
25x10
6
2
A
V
2
31.5
( )
2
V
2
= 28.1 A
V
DS
=V
DD
I
D
R
D
=10 100k 28.1A
( )
= 7.19 V. V
DS
V
GS
V
TN
, so our assumption was correct.
Q- Point = 28.1 A, 7.19 V
( )
- - -
V
DS
=10
25x10
6
10
5
( )
2
31
( )
2
1+ 0.01V
DS
( )
V
DS
=10 5 1+ 0.01V
DS
( )
V
DS
=
10 5
1.05
V = 4.76 V I
D
=
25x10
6
2
31
( )
2
1+ 0.01 4.76
( ) [ ]
= 52.4 A

Page 182


For I
D
= 0, V
DS
=10 V. For V
DS
= 0, I
D
=
10V
66.7k
=150A.
The load line intersects the V
GS
= 3- V curve at I
D
= 50 A, V
DS
= 6.7 V.

R. C. Jaeger and T. N. Blalock
08/09/10
17
Page 185 Upper group


V
GS
2
+V
GS
2
K
n
R
S
2V
TN






+V
TN
2

2V
EQ
K
n
R
S
= 0 | V
GS
=
1
K
n
R
S
V
TN

1
K
n
R
S
V
TN






2
V
TN
2
+
2V
EQ
K
n
R
S
V
GS
=V
TN

1
K
n
R
S

1
K
n
R
S






2

2V
TN
K
n
R
S
+V
TN
2
V
TN
2
+
2V
EQ
K
n
R
S
=V
TN
+
1
K
n
R
S
1+ 2K
n
R
S
V
EQ
V
TN ( )
1
( )

Assume saturation region operation.
I
D
=
1
2K
n
R
S
2
1+ 2K
n
R
S
V
EQ
V
TN ( )
1
( )
2
=
1
2 30A
( )
39k
( )
2
1+ 2 30A
( )
39k
( )
4 1
( )
1
( )
2
= 36.8 A
V
DS
=10 114k 36.8A
( )
= 5.81 V | Saturation region is correct. | Q- Point : 36.8 A, 5.81 V
( )

Assume saturation region operation. I
D
=
1
2 25A
( )
39k
( )
2
1+ 2 25A
( )
39k
( )
4 1.5
( )
1
( )
2
= 26.7 A
V
DS
=10 114k 26.7A
( )
= 6.96 V | Saturation region is correct. | Q- Point : 26.7 A, 6.96 V
( )
Assume saturation region operation. I
D
=
1
2 25A
( )
62k
( )
2
1+ 2 25A
( )
62k
( )
4 1
( )
1
( )
2
= 36.8 A
V
DS
=10 137k 25.4A
( )
= 6.52 V | Saturation region is correct. | Q- Point : 25.4 A, 6.52 V
( )

R. C. Jaeger and T. N. Blalock
08/08/10
18
Page 185 Lower group


V
EQ
=
R
1
R
1
+ R
2
V
DD
=
1M
1M+1.5M
10V = 4 V | Assume saturation region operation.
I
D
=
1
2K
n
R
S
2
1+ 2K
n
R
S
V
EQ
V
TN ( )
1
( )
2
=
1
2 25A
( )
1.8k
( )
2
1+ 2 25A
( )
1.8k
( )
4 1
( )
1
( )
2
= 99.5 A
V
DS
=10 40.8k 99.5A
( )
= 5.94 V | Saturation region is correct. | Q- Point : 99.5 A, 5.94 V
( )
V
EQ
=
R
1
R
1
+ R
2
V
DD
=
1.5M
1.5M+1M
10V = 6 V | Assume saturation region operation.
I
D
=
1
2 25A
( )
22k
( )
2
1+ 2 25A
( )
22k
( )
6 1
( )
1
( )
2
= 99.2 A
V
DS
=10 40k 99.2A
( )
= 6.03 V | Saturation region is correct. | Q- Point : 99.2 A, 6.03 V
( )

I
Bias
=
V
DD
R
1
+ R
2
R
1
+ R
2
=
V
DD
I
Bias
=
10V
2A
= 5 M
V
EQ
=
R
1
R
1
+ R
2
V
DD
R
1
= R
1
+ R
2 ( )
V
EQ
V
DD
= 5M
4V
10V
= 2 M
R
2
= 5M R
1
= 3 M | R
EQ
= R
1
R
2
=1.2 M

Page 187


V
GS
= 6 22000I
D
V
SB
= 22000I
D
V
TN
=1+ 0.75 V
SB
+ 0.6 0.6
( )
I
D
=
25A
2
V
GS
V
TN
( )
2
Spreadsheet iteration yields I
D
= 83.2 A.

Page 183


Equation 4.55 becomes 6 - 1+ 0.75 V
SB
+ 0.6 0.6
( )
+ 2.83
[ ]
V
SB
= 0.
V
SB
2
6.065V
SB
+ 7.231= 0 V
SB
=1.63V.
R
S
=
1.63V
10
4
A
=16.3 k16 k R
D
=
10 6 1.63
( )
V
10
4
A
= 23.7k24 k

R. C. Jaeger and T. N. Blalock
08/09/10
19
Page 189


Assume saturation region operation.
10 6 =
25x10
6
62x10
4
( )
2
V
GS
+1
( )
2
V
GS
V
GS
2
+ 0.710V
GS
4.161= 0 V
GS
= 2.426V, +1.716V
I
D
=
25x10
6
2
2.426 +1
( )
2
= 25.4 A | V
DS
= 10 137k 25.4A
( ) [ ]
= 6.52 V
Saturation region is correct. | Q- Point : 25.4 A, - 6.52 V
( )

Page 195


a
( )
V
DS
= 3 V, V
GS
V
P
= 2 3.5
( )
= +1.5 V. The transistor is pinched off.
I
D
= I
DSS
1
V
GS
V
P
[
\
|

)
j
2
=1mA 1
2V
3.5V
[
\
|

)
j
|
|
|
|
|
|
2
=184 A | Pinchoff requires V
DS
V
GS
V
P
= +1.5 V
b
( )
V
DS
= 6 V, V
GS
V
P
= 1 3.5
( )
= +2.5 V. The transistor is pinched off.
I
D
= I
DSS
1
V
GS
V
P
[
\
|

)
j
2
=1mA 1
1V
3.5V
[
\
|

)
j
|
|
|
|
|
|
2
= 510 A | Pinchoff requires V
DS
V
GS
V
P
= +2.5 V
c
( )
V
DS
= 0.5 V, V
GS
V
P
= 2 3.5
( )
= +1.5 V. The transistor is in the triode region.
I
D
=
2I
DSS
V
P
2
V
GS
V
P

V
DS
2
[
\
|

)
j
V
DS
=
2 1mA
( )
3.5
( )
2
2 + 3.5
0.5
2
[
\
|

)
j
0.5 = 51.0 A
Pinchoff requires V
DS
V
GS
V
P
= +1.5 V

a
( )
V
DS
= 0.5 V, V
GS
V
P
= 2 4
( )
= +2 V. The transistor is in the triode region.
I
D
=
2I
DSS
V
P
2
V
GS
V
P

V
DS
2
[
\
|

)
j
V
DS
=
2 0.2mA
( )
4
( )
2
2 + 4
0.5
2
[
\
|

)
j
0.5 = 21.9 A
b
( )
V
DS
= 6 V, V
GS
V
P
= 1 4
( )
= +3 V. The transistor is pinched off.
I
D
= I
DSS
1
V
GS
V
P
[
\
|

)
j
2
= 0.2mA 1
1V
4V
[
\
|

)
j
|
|
|
|
|
|
2
=113 A

R. C. Jaeger and T. N. Blalock
08/08/10
20
Page 197


a
( )
V
DS
= 3 V, V
GS
V
P
= 34 = 1 V. The transistor is pinched off.
I
D
= I
DSS
1
V
GS
V
P
[
\
|

)
j
2
= 2.5mA 1
3V
4V
|
|
|
|
|
|
2
=156 A | Pinchoff requires V
DS
V
GS
V
P
= 1 V
b
( )
V
DS
= 6 V, V
GS
V
P
=1 4
( )
= 3 V. The transistor is pinched off.
I
D
= I
DSS
1
V
GS
V
P
[
\
|

)
j
2
= 2.5mA 1
1V
4V
|
|
|
|
|
|
2
=1.41 mA | Pinchoff requires V
DS
V
GS
V
P
= 3 V
c
( )
V
DS
= 0.5 V, V
GS
V
P
= 2 4
( )
= 2 V. The transistor is in the triode region.
I
D
=
2I
DSS
V
P
2
V
GS
V
P

V
DS
2
[
\
|

)
j
V
DS
=
2 2.5mA
( )
4
2
2 4
0.5
2
[
\
|

)
j
0.5
( )
= 273 A
Pinchoff requires V
DS
V
GS
V
P
= 2 V

Page 198


BETA =
I
DSS
V
P
2
=
2.5mA
2
( )
2
= 0.625 mA | VTO=V
P
= 2 V | LAMBDA = = 0.025 V
-1

BETA =
I
DSS
V
P
2
=
5mA
2
2
=1.25 mA | VTO=V
P
= 2 V | LAMBDA = = 0.02 V
-1

R. C. Jaeger and T. N. Blalock
08/09/10
21
Page 200


VTO=V
P
= 5 V | BETA =
I
DSS
V
P
2
=
5mA
5
( )
2
= 0.2 mA | LAMBDA = = 0.02 V
-1

V
GS
=V
G
V
S
= I
G
R
G
I
S
R
S
= 0 I
D
R
S
= I
D
R
S
V
GS
=
K
n
2
V
GS
V
TN ( )
2
R
S
=
K
n
2
V
TN
2
R
S
V
GS
V
TN
1






2
= I
DSS
R
S
1
V
GS
V
P






2
for I
DSS
=
K
n
2
V
TN
2
and V
P
=V
TN
V
GS
=
0.4mA
2
5
( )
2
1k
( )
1
V
GS
5






2
= 5 1+
V
GS
5






2
V
GS
2
15V
GS
+ 25 = 0 and the rest is identical.
- - -
Assuming pinchoff, I
D
=1.91 mA and V
DS
= 9 1.91mA 2k+1k
( )
= 3.27 V.
V
GS
V
P
= 3.09 V, V
DS
>V
GS
V
P
, and pinchoff is correct.
- - -
Assuming pinchoff, V
GS
= I
DSS
R
S
1
V
GS
V
P






2
= 5x10
3
( )
2x10
3
( )
1+
V
GS
5






2
V
GS
2
+12.5V
GS
+ 25 = 0
V
GS
= 2.5 V | I
D
= I
DSS
1
V
GS
V
P






2
= 5mA 1
2.5
5






2
=1.25 mA
V
DS
=12 1.25mA 2k+ 2k
( )
= 7.00 V.
V
GS
V
P
= 2.5 5
( )
= +2.5 V, V
DS
>V
GS
V
P
, and pinchoff is correct. Q- Point : 1.25 mA, 7.00 V
( )
- - -
a
( )
V
G
= I
G
R
G
= 10nA 680k
( )
= 6.80 mV.
V
GS
=V
G
V
S
= I
G
R
G
I
DSS
R
S
1
V
GS
V
P






2
= .00680 5x10
3
( )
10
3
( )
1+
V
GS
5






2
V
GS
2
15V
GS
+ 25 = 0
The value of V
G
is insignificant with respect to the constant term of 25. So the answers are
the same to 3 significant digits.
b
( )
V
G
= I
G
R
G
= 1A 680k
( )
= 0.680 V and now cannot be neglected.
V
GS
=V
G
V
S
= I
G
R
G
I
DSS
R
S
1
V
GS
V
P






2
= 0.680 5x10
3
( )
10
3
( )
1+
V
GS
5






2
V
GS
2
15V
GS
+ 28.4 = 0
V
GS
= 2.226 V | I
D
= I
DSS
1
V
GS
V
P






2
= 5mA 1
2.226
5






2
=1.54 mA
V
DS
=12 1.54mA 2k+1k
( )
= 7.38 V | Q- Point : 1.54 mA, 7.38 V
( )

R. C. Jaeger and T. N. Blalock
08/08/10
22
CHAPTER 5

Page 223


a
( )

F
=

F
1
F
=
0.970
10.970
= 32.3 |
F
=
0.993
10.993
=142 |
F
=
0.250
1.250
= 0.333
b
( )

F
=

F

F
+1
=
40
41
= 0.976 |
F
=
200
201
= 0.995 |
F
=
3
4
= 0.750

Page 225


i
C
=10
15
A exp
0.700
0.025
[
\
|

)
j
exp
9.30
0.025
[
\
|

)
j
|
|
|
|
|
|

10
15
A
0.5
exp
9.30
0.025
[
\
|

)
j
1
|
|
|
|
|
|
=1.45 mA
i
E
=10
15
A exp
0.700
0.025
[
\
|

)
j
exp
9.30
0.025
[
\
|

)
j
|
|
|
|
|
| +
10
15
A
100
exp
0.700
0.025
[
\
|

)
j
1
|
|
|
|
|
| =1.46 mA
i
B
=
10
15
A
100
exp
0.700
0.025
[
\
|

)
j
1
|
|
|
|
|
|
+
10
15
A
0.5
exp
9.30
0.025
[
\
|

)
j
1
|
|
|
|
|
|
=14.5 A

Page 227


i
C
=10
16
A exp
0.750
0.025
[
\
|

)
j
exp
0.700
0.025
[
\
|

)
j
|
|
|
|
|
|
10
16
A
0.4
exp
0.700
0.025
[
\
|

)
j
1
|
|
|
|
|
| = 563 A
i
E
=10
16
A exp
0.750
0.025
[
\
|

)
j
exp
0.700
0.025
[
\
|

)
j
|
|
|
|
|
|
+
10
16
A
75
exp
0.750
0.025
[
\
|

)
j
1
|
|
|
|
|
|
= 938 A
i
B
=
10
16
A
75
exp
0.750
0.025
[
\
|

)
j
1
|
|
|
|
|
| +
10
16
A
0.4
exp
0.700
0.025
[
\
|

)
j
1
|
|
|
|
|
| = 376 A

i
T
=10
15
A exp
0.750
0.025
[
\
|

)
j
exp
2
0.025
[
\
|

)
j
|
|
|
|
|
|
=10.7 mA
i
T
=10
16
A exp
0.750
0.025
[
\
|

)
j
exp
4.25
0.025
[
\
|

)
j
|
|
|
|
|
| =1.07 mA

R. C. Jaeger and T. N. Blalock
08/09/10
23
Page 230


V
BE
=V
T
ln
I
C
I
S
+1






= 0.025V ln
10
4
A
10
16
A
+1





= 0.691 V
V
BE
=V
T
ln
I
C
I
S
+1






= 0.025V ln
10
3
A
10
16
A
+1





= 0.748 V

Page 231


npn : V
BE
> 0, V
BC
< 0 Forward Active Region | pnp : V
EB
> 0, V
CB
> 0 Saturation Region

Page 233

F
=

F
1
F
=
0.95
0.05
=19
R
=

R
1
R
=
0.25
0.75
=
1
3
V
BE
= 0, V
BC
<< 0 : I
C
= I
S
1+
1

R






=10
16
A 1+
1
0.333






= 0.400 fA
I
E
= I
S
= 0.100 fA I
B
=
I
S

R
=
10
16
A
0.333
= 0.300 fA
V
BE
<< 0, V
BC
<< 0 : I
C
=
I
S

R
= 3x10
16
A= 0.300 fA
I
E
=
I
S

F
=
10
16
A
19.0
= 5.26 aA I
B
=
I
S

F

I
S

R
=
10
16
A
19.0

10
16
A
1/ 3
= 0.305 fA

Page 235


a
( )
The currents do not depend upon V
CC
as long as the collector - base junction is reverse
biased by more than 0.1 V. (Later when Early votlage V
A
is discussed, one should revisit
this problem.)
b
( )
I
E
=100 A | I
B
=
I
E

F
+1
=
100A
51
=1.96 A | I
C
=
F
I
B
= 50I
B
= 98.0 A
V
BE
=V
T
ln
I
C
I
S
+1






= 0.025V ln
98.0A
10
16
A
+1






= 0.690 V

R. C. Jaeger and T. N. Blalock
08/08/10
24
Page 236


a
( )
The currents do not depend upon V
CC
as long as the collector - base junction is reverse
biased by more than 0.1 V. (Later when Early voltage V
A
is discussed, one should revisit
this problem.)
b
( )
Forward - active region : I
B
=100 A | I
E
=
F
+1
( )
I
B
= 5.10 mA | I
C
=
F
I
B
= 5.00 mA
V
BE
=V
T
ln
I
C
I
S
+1






= 0.025V ln
5.00mA
10
16
A
+1






= 0.789 V | Checking: V
BC
= 5+ 0.789 = 4.21

Forward - active region with V
CB
0 requires V
CC
V
BE
or V
CC
0.764 V

Page 238


a
( )
Resistor R is changed.
I
E
=
0.7V 9V
( )
5.6k
=1.48 mA | I
B
=
I
E

F
+1
=
I
E
51
= 29.1 A | I
C
=
F
I
B
= 50I
B
=1.45 mA
V
CE
=V
C
V
E
= 9 4300I
C ( )
0.7
( )
= 3.47 V | Q- Point : 1.45 mA, 3.47 V
( )
b
( )
I
E
=

F
+1

F
I
C
=
51
50
100A =102A | R =
0.7V 9V
( )
102A
=
8.3V
102A
= 81.4 k
The nearest 5% value is 82 k.

Page 239


I
E
=
0.7V 9V
( )
5.6k
=1.48 mA | I
B
=
I
E

F
+1
=
I
E
50
= 29.1 A | I
C
=
F
I
B
= 50I
B
=1.45 mA

I
E
=

F
+1

F
I
C
=
51
50
I
C
=1.02I
C
V
BE
=V
T
ln
I
C
I
S
+1
[
\
|

)
j
= 0.025ln 2x10
15
I
C
+1
( )
V
BE
+ 8200 1.02 5x10
16
( )
exp
V
BE
0.025
[
\
|

)
j
1
|
|
|
|
|
| = 9 V
BE
= 0.7079 V using a calculator solver
or spreadsheet. I
C
= 5x10
16
exp
0.7079
0.025
[
\
|

)
j
= 992 A | V
CE
= 9 4300I
C
0.708
( )
= 5.44 V

I
SD
=
I
SBJT

F
=
2x10
14
A
0.95
= 21.0 fA

R. C. Jaeger and T. N. Blalock
08/09/10
25
Page 242


Resistor R is changed :
I
C
=
0.7V 9V
( )
5.6k
=1.48 mA | I
B
=
I
C

R
+1
=
I
C
2
= 0.741 mA | I
E
=
R
I
B
= 1
( )
I
B
= 0.741 mA

Page 244


V
CESAT
= 0.025V
( )
ln
1
0.5
[
\
|

)
j
1+
1mA
2 40A
( )
1
1mA
50 40A
( )
|
|
|
|
|
|
|
|
|
|
|
|
= 99.7 mV

V
BESAT
= 0.025V
( )
ln
0.1mA+ 10.5
( )
1mA
10
15
A
1
50
+10.5
[
\
|

)
j
|
|
|
|
|
|
|
|
|
|
|
|
= 0.694 mV
V
BCSAT
= 0.025V
( )
ln
0.1mA
1mA
50
10
15
A
1
0.5
[
\
|

)
j
1
50
+10.5
[
\
|

)
j
|
|
|
|
|
|
|
|
|
|
|
|
= 0.627 mV | V
CESAT
=V
BESAT
V
BCSAT
= 67.7mV

Page 247


a
( )
D
n
=
kT
q

n
= 0.025V 500cm
2
/ V s
( )
=12.5cm
2
/ s
b
( )
I
S
=
qAD
n
n
i
2
N
AB
W
=
1.6x10
19
C 50m
2
( )
10
4
cm/ m
( )
12.5cm
2
/ s
( )
10
20
/ cm
6
( )
10
18
/ cm
3
( )
1m
( )
=10
18
A=1 aA

Page 250


V
T
=
1.38x10
23
J / K
( )
373K
( )
1.60x10
19
C
= 32.2mV | C
D
=
I
C
V
T

F
=
10A
0.0322V
4x10
9
s
( )
=1.24 F

=
f
T

F
=
300MHz
125
= 2.40 MHz

R. C. Jaeger and T. N. Blalock
08/08/10
26
Page 251


I
C
=10
15
Aexp
0.7
0.025






1+
10
50






=1.74 mA |
F
= 75 1+
10
50






= 90.0 | I
B
=
1.74mA
90.0
=19.3 A
I
C
=10
15
Aexp
0.7
0.025






=1.45 mA |
F
= 75 | I
B
=
1.45mA
75
=19.3 A

Page 253


g
m
=
40
V
10
4
A
( )
= 4.00 mS | g
m
=
40
V
10
3
A
( )
= 40.0 mS
C
D
= 4.00mS 25ps
( )
= 0.100 pF | C
D
= 40.0mS 25ps
( )
=1.00 pF

Page 256


V
T
=
kT
q
=
1.38x10
23
300
( )
1.60x10
19
= 25.9 mV | IS=
I
C
exp
V
BE
V
T






=
350A
exp
0.68
0.0259






=1.39 fA
BF = 80 | VAF = 70 V

Page 260


V
EQ
=
18k
18k+ 36k
12V = 4.00 V | R
EQ
=18k 36k=12 k
I
B
=
4.00 0.7
12 + 75+1
( )
16
V
k
= 2.687 A | I
C
= 75I
B
= 202 A | I
E
= 76I
B
= 204 A
V
CE
=12 22000I
C
16000I
E
= 4.29 V | Q- point : 202 A, 4.29 V
( )

V
EQ
=
180k
180k+ 360k
12V = 4.00 V | R
EQ
=180k 360k=120 k
I
B
=
4.00 0.7
120 + 75+1
( )
16
V
k
= 2.470 A | I
C
= 75I
B
=185 A | I
E
= 76I
B
=188 A
V
CE
=12 22000I
C
16000I
E
= 4.29 V | Q- point : 185 A, 4.93 V
( )

R. C. Jaeger and T. N. Blalock
08/09/10
27
Page 261


I
2
=
I
C
5
=
50I
B
5
=10I
B

V
EQ
=
18k
18k+ 36k
12V = 4.00 V | R
EQ
=18k 36k=12 k
I
B
=
4.00 0.7
12 + 500 +1
( )
16
V
k
= 0.4111 A | I
C
= 500I
B
= 205.6 A | I
E
= 76I
B
= 206.0 A
V
CE
=12 22000I
C
16000I
E
= 4.18 V | Q- point : 206 A, 4.18 V
( )

Page 262


The voltages all remain the same, and the currents are reduced by a factor of 10. Hence all
the resistors are just scaled up by a factor of 10.
120 k1.2 M 82 k820 k 6.8 k68 k

Page 264


V
CE
= 0.7 V at the edge of saturation. 12V - R
C
+
76
75
16k






205A
( )
0.7V R
C
38.9 k

V
BESAT
= 4 12k 24A
( )
16k184A
( )
= 0.768 V
V
CESAT
=12 56k160A
( )
16k184A
( )
= 0.096 V

Page 265


I
B
=
9 0.7
36 + 50 +1
( )
1
V
k
= 95.4 A | I
C
= 50I
B
= 4.77 mA | I
E
= 51I
B
= 4.87 mA
V
CE
= 9 1000 I
C
+ I
B ( )
= 4.13 V | Q- point : 4.77 mA, 4.13 V
( )

Page 266
VBE (V) IC (A) V'BE (V)
0.70000 2.0155E-04 0.67156
0.67156 2.0328E-04 0.67178
0.67178 2.0327E-04 0.67178
0.67178 2.0327E-04 0.67178