UMT2907A / SST2907A / MMST2907A / PN2907A

Transistors

PNP Medium Power Transistor

(Switching)
UMT2907A / SST2907A / MMST2907A / PN2907A
!External dimensions (Units : mm)
UMT2907A

2.00.2
0.90.1

1.30.1
0.65 0.65

0.2

(3)

!Package, marking and packaging specifications

Part No.

2.10.1

0~0.1

0.3+0.1
0
All terminals have
same dimensions

ROHM : UMT3
EIAJ : SC-70

0.70.1

(2)

1.250.1

(1)

0.1~0.4

!Features
1) BVCEO< -60V (IC=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A / PN2222A.

0.150.05

(1) Emitter
(2) Base
(3) Collector

UMT2907A SST2907A MMST2907A PN2907A

Code
Basic ordering unit
(pieces)

UMT3
R2F
T106

SST3
R2F
T116

TO-92
T93

SMT3
R2F
T146

SST2907A

2.90.2

0.95 +0.2
0.1

1.90.2

0.450.1

0.95 0.95

3000

3000

3000

3000

(2)

(1)

1.3+0.2
0.1

Marking

0~0.1

2.40.2

Packaging type

0.2Min.

(3)

All terminals have

same dimensions
+0.1
0.15 0.06
0.4 +0.1
0.05

!Absolute maximum ratings (Ta=25C)

Limits

Unit

VCBO
VCEO

-60
-60

V
V

VEBO
IC

-5
-0.6

V
A

0.2

0.80.1

(2)

1.6+0.2
0.1

PC

1.1+0.2
0.1

1.90.2

0~0.1

All terminals have

same dimensions

C
C

0.4 +0.1
0.05

ROHM : SMT3
EIAJ : SC-59

PN2907A

4.80.2

+0.1
0.15 0.06

(1) Emitter
(2) Base
(3) Collector

3.70.2

2.5Min.

0.625
150
-55~+150

0.3~0.6

(3)

Tj
Tstg

4.80.2

Storage temperature

2.90.2

0.95 0.95
(1)

PN2907A
Junction temperature

MMST2907A

2.80.2

Symbol

(12.7Min.)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
UMT2907A,
Collector power SST2907A,
dissipation
MMST2907A

(1) Emitter
(2) Base
(3) Collector

ROHM : SST3

0.50.1
(1)

(2)
5

ROHM : TO-92
EIAJ : SC-43

(3)

2.5 +0.3
0.1
0.450.1

2.3

(1) Emitter
(2) Base
(3) Collector

UMT2907A / SST2907A / MMST2907A / PN2907A

Transistors
!Electrical characteristics (Ta=25C)
Parameter

Symbol

Min.

Typ.

Max.

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

BVCBO
BVCEO

60
60

V
V

IC=10A
IC=10mA

Emitter-base breakdown voltage

BVEBO

IE=10A

ICBO

100

ICES

100

IEBO

100

0.4

1.6

0.6

1.3

Collector cutoff current

Emitter cutoff current
Collector-emitter saturation voltage

VCE(sat)

Base-emitter saturation voltage

VBE(sat)

nA
nA
V
V

Conditions

VCB=50V
VCB=30V
VEB=3V
IC/IB=150mA/15mA
IC/IB=500mA/50mA
IC/IB=150mA/15mA

2.6

75

100

hFE

100

300

fT

100
50
200

Collector output capacitance

Cob

pF

VCE=10V, IC=500mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, f=100kHz

Emitter input capacitance

Cib

30

pF

VEB=2V, f=100kHz

Turn-on time

ton

50

ns

VCC=30V, VBE(OFF)=1.5V, IC=150mA, IB1=15mA

Delay time

td

10

ns

VCC=30V, VBE(OFF)=1.5V, IC=150mA, IB1=15mA

Rise time

tr

40

ns

VCC=30V, VBE(OFF)=1.5V, IC=150mA, IB1=15mA

Turn-off time

toff

100

ns

VCC=30V, IC=150mA, IB1=IB2=15mA

Storage time

tstg

80
30

ns
ns

VCC=30V , IC=150mA, IB1=IB2=15mA

tf

DC current transfer ratio

Transition frequency

Fall time

IC/IB=500mA/50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA

VCE=10V, IC=10mA
VCE=10V, IC=150mA

MHz

VCC=30V, IC=150mA, IB1=IB2=15mA

100
COLLECTOR CURRENT : IC (mA)

Ta=25C

600

500
400
50

300
200
100

1B=0A
0
0
10
5
COLLECTOR-EMITTER VOLTAGE : VCE (V)

BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V)

!Electrical characteristic curves

1.8
Ta=25C
IC / IB=10

1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2

Fig.1 Grounded emitter output

characteristics

0
1.0

10
100
1000
COLLECTOR CURRENT : IC (mA)

Fig.2 Base-emitter saturation

voltage vs. collector current

1000

DC CURRENT GAIN : hFE

Ta=25C

VCE=10V

100

10
0.1

1V

1.0

10
COLLECTOR CURRENT : IC (mA)

100

Fig.3 DC current gain vs. collector current ( I )

1000

UMT2907A / SST2907A / MMST2907A / PN2907A

Transistors
1000

DC CURRENT GAIN : hFE

VCE=10V

Ta=125C
Ta=25C

100
Ta=55C

10
0.1

1.0

10
COLLECTOR CURRENT : IC (mA)

100

1000

Fig.4 DC current gain vs. collector current ( II )

1000

AC CURRENT GAIN : hFE

COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE (sat) (V)

Ta=25C
VCE=10V
f=1kHz

100

10
0.1

1.0

10
COLLECTOR CURRENT : IC (mA)

100

Ta=25C
IC / IB=10
0.3

0.2

0.1

0
1.0

1000

Fig.6 Collector-emitter saturation

voltage vs. collector current

1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0

100

1000

Ta=25C
VCE=10V

10
100
1000
COLLECTOR CURRENT : IC (mA)

Fig.7 Grounded emitter propagation

characteristics

Ta=25C
VCE=10V

100

10
1

10

100

COLLECTOR CURRENT : IC (mA)

Fig.8 Gain bandwidth product

vs. collector current

1000

COLLECTOR-EMITTER VOLTAGE : VCE(V)

1.6

CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)

BASE-EMITTER ON VOLTAGE : VBE(on) (V)

Fig.5 AC current gain vs. collector current

1.8

10
100
1000
COLLECTOR CURRENT : IC (mA)

Ta=25C
100MHz
300MHz
200MHz

10

250MHz
1

200MHz
0.1

10
100
1000
COLLECTOR CURRENT : IC (mA)

Fig.9 Gain bandwidth product

UMT2907A / SST2907A / MMST2907A / PN2907A

Transistors

Cib
Cob

10

1000

Ta=25C
IC / IB=10

500
Ta=25C
VCC=30V
IC / IB=10

RISE TIME : tr (ns)

Ta=25C
f=1MHz

TURN ON TIME : ton (ns)

CAPACITANCE (pF)

100

100

VCC=30V

100

10V

10

1
0.1

10

1
10
REVERSE BIAS VOLTAGE (V)

100

Fig.11 Turn-on time vs.collector

current

Fig.10 Input/output capacitance

vs. voltage

1000

100

10

1000

Ta=25C
VCC=30V
IC=10IB1=10IB2

FALL TIME : tf (ns)

STORAGE TIME : ts (ns)

Ta=25C
VCC=30V
IC=10IB1=10IB2

10
100
1000
COLLECTOR CURRENT : IC (mA)

100

10
100
1000
COLLECTOR CURRENT : IC (mA)

Fig.13 Storage time vs. collector

current

10
1

10
100
1000
COLLECTOR CURRENT : IC (mA)

Fig.14 Fall time vs. collector

current

10
100
1000
COLLECTOR CURRENT : IC (mA)

Fig.12 Rise time vs. collector

current