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Preliminary Data Sheet No.

PD60062-K

IR2153(D) (S)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features

Integrated 600V half-bridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on CT pin Increased undervoltage lockout Hysteresis (1V) Lower power level-shifting circuit Constant LO, HO pulse widths at startup Lower di/dt gate driver for better noise immunity Low side output in phase with RT Internal 50nsec (typ.) bootstrap diode (IR2153D) Excellent latch immunity on all inputs and outputs ESD protection on all leads

Product Summary
VOFFSET Duty Cycle Tr/Tp Vclamp Deadtime (typ.) 600V max. 50% 80/40ns 15.6V 1.2 s

Packages

Description
The IR2153(D)(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front 8 Lead SOIC 8 Lead PDIP end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Typical Connections
IR2153(S)
600V MAX VCC VB

IR2153D
600V MAX

VCC

VB

HO RT VS RT

HO VS

CT Shutdown COM

LO Shutdown

CT COM

LO

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IR2153(D) (S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol
VB VS VHO VLO VRT VCT ICC IRT dV s/dt PD RthJA TJ TS TL

Definition
High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side output voltage RT pin voltage CT pin voltage Supply current (note 1) RT pin current Allowable offset voltage slew rate Maximum power dissipation @ T A +25C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC)

Min.
-0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 -5 -50 -55 -55

Max.
625 VB + 0.3 VB + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 25 5 50 1.0 0.625 125 200 150 150 300

Units

mA V/ns W C/W

Recommended Operating Conditions


For proper operation the device should be used within the recommended conditions.

Symbol
VBs VS VCC ICC TJ Note 1:

Definition
High side floating supply voltage Steady state high side floating supply offset voltage Supply voltage Supply current Junction temperature

Min.
VCC - 0.7 -3.0 (note 2) 10 (note 3) -40

Max.
VCLAMP 600 VCLAMP 5 125

Units
V

mA C

Note 2: Note 3:

This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by more than 5V. Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin.

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IR2153(D) (S)

Recommended Component Values


Symbol
RT CT

Component
Timing resistor value CT pin capacitor value

Min.
10 330

Max.

Units
k pF

IR2153 RT vs Frequency
1000000

100000

Frequency (Hz)

10000

330pf 470pF 1nF

CT Values

1000

2.2nF 4.7nF 10nF

100

10 10 100 1000 RT (ohms) 10000 100000 1000000

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IR2153(D) (S)

Electrical Characteristics
VBIAS (VCC , VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

Low Voltage Supply Characteristics


Symbol Definition
VCCUV+ VCCUVVCCUVH IQCCUV IQCC VCLAMP Rising V CC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout Hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC zener clamp voltage

Min.
8.1 7.2 0.5 14.4

Typ.
9.0 8.0 1.0 75 500 15.6

Max.
9.9 8.8 1.5 150 950 16.8

Units Test Conditions


V A V VCC VCCUVICC = 5mA

Floating Supply Characteristics


Symbol Definition
IQBSUV IQBS VBSMIN ILK VF Micropower startup VBS supply current Quiescent VBS supply current Minimum required VBS voltage for proper functionality from RT to HO Offset supply leakage current Bootstrap diode forward voltage (IR2153D)

Min.
0.5

Typ.
0 30 4.0

Max.
10 50 5.0 50 1.0

Units Test Conditions


A V A V VCC VCCUVVCC=VCCUV+ + 0.1V VB = VS = 600V IF = 250mA

Oscillator I/O Characteristics


Symbol Definition
fosc d ICT ICTUV VCT+ VCTVCTSD VRT+ VRTVRTUV VRTSD Oscillator frequency RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper CT ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level RT output voltage, VCC - VRT Low-level RT output voltage UV-mode RT output voltage SD-Mode RT output voltage, VCC - VRT

Min.
19.4 94 48 0.30 1.8

Typ.
20 100 50 0.001 0.70 8.0 4.0 2.1 10 100 10 100 0 10 10

Max.
20.6 106 52 1.0 1.2 2.4 50 300 50 300 100 50 300

Units Test Conditions


kHz % uA mA V IRT = 100A IRT = 1mA IRT = 100A IRT = 1mA VCC VCCUVIRT = 100A, VCT = 0V IRT = 1mA, VCT = 0V RT = 36.9k RT = 7.43k fo < 100kHz VCC = 7V

mV

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IR2153(D) (S)

Electrical Characteristics (cont.)


Gate Driver Output Characteristics
Symbol Definition
VOH High level output voltage, V BIAS -VO VOL Low-level output voltage, VO VOL_UV UV-mode output voltage, VO tr tf tsd td Output rise time Output fall time Shutdown propogation delay Output deadtime (HO or LO)

Min.
0.75

Typ.
0 0 0 80 45 660 1.20

Max.
100 100 100 150 100 1.65

Units Test Conditions


mV IO = OA IO = OA IO = OA VCC VCCUV-

nsec sec

Lead Definitions
Symbol
VCC RT CT COM LO VS HO VB

Description
Logic and internal gate drive supply voltage Oscillator timing resistor input Oscillator timing capacitor input IC power and signal ground Low side gate driver output High voltage floating supply return High side gate driver output High side gate driver floating supply

Lead Assignments

8 Lead PDIP

8 Lead SOIC

IR2153(D)
NOTE: The IR2153D is offered in 8 lead PDIP only.

IR2153S

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IR2153(D) (S)
Functional Block Diagram for IR2153(S)
RT VB R + R R + R/2 + R/2 LOGIC DEAD TIME DELAY 15.6V LO S Q Q VCC DEAD TIME PULSE GEN
HV LEVEL SHIFT

Q PULSE FILTER R S VS HO

CT

UV DETECT

COM

Functional Block Diagram for IR2153D


RT VB R + R R + R/2 + R/2 LOGIC DEAD TIME DELAY 15.6V LO S Q Q VCC DEAD TIME PULSE GEN
HV LEVEL SHIFT

Q PULSE FILTER R S VS HO

D1

CT

UV DETECT

COM

NOTE: The D1 is a separate die.

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IR2153(D) (S)

8 Lead PDIP

01-3003 01

8 Lead SOIC
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01-0021 08

IR2153(D) (S)

V Vccuv+ Vcc

CLAMP

RT RT ,C T 2/3 1/3 CT

td LO

td HO

Figure 1. Input/Output Timing Diagram

RT
50%
(HO)

50%

(LO)

90%

HO LO
90%

10% DT

10%

Figure 2. Switching Time Waveform Definitions

Figure 3. Deadtime Waveform Definitions

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 http://www.irf.com/ Data and specifications subject to change without notice. 4/6/2001

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