NANOTECHNOLOGY

AND ITS ADVENT IN ELECTRONICS NETWORKS

AND

COMMUNICATION

Maansi Bhasin', Kasturi Mishra2 Mrs. S.P. Gaikwad", Mrs. S.P. Tondare4 , Bharati Vidyapeeth Deemed University College of Engineering, Pune-411043 (MS), India
1maansi

_bhasin@yahoo.co. in, 2 mishrakasturi02@yahoo. co. in in

,4 tondaresharda@yahoo.com

3*spgaikwad@bvucoep.edu.

Abstract: The world is on the brink of a new .technological revolution beyond any human experience. A new, more powerful industrial revolution capable of bringing wealth, health and education, without pollution, to every person on the planet. This is the promise of nanotechnology. Nanotechnology has gained

Switching and Interference which consists of Quantum Point Contacts, Electronic

Waveguides and The 3-Terminal(Y-Branch) Switching Devices. One of the central visions of the wireless industry aims at ambient intelligence are computation and communication always

increased design, whose

popularity

largely due to the available and ready to serve the user in an of materials exist at intelligent way. This requires that the devices are mobile. Core requirements for this kind of ubiquitous ambient intelligence

creation" utilization constituent

structures

Nanoscale i.e. physical dimensions that are in the range of 'one-billionth (1O~ of a

are that the devices are autonomous and meter.Nanotechriology applications can be robust. The nanotechnology is developing discussed in both the field of electronics as briskly in telecommunications area. well as telecommunications. The devices devices talked over include Sensors, Nanotubes, Nanoscale Antennae. Towards include Nan.o-Materials, Nanoscale the end Transistors, Semiconductor Flash Memory, Wave Interference Devices including Quantum. The applications m the field of communications can be found in association thrown on The Basics-of -Coherent commercial applications of Nano electronics bas been inculcated in the paper. a brief overview of emerging which have been discussed in the paper The

Electronic

Wave guiding and

Interference Devices. Some light bas been

to

Network

concepts Nano

ill

Nano

every 24 months, and it has been the guiding principle for the semiconductor industry for over 30 years. The sustaining of Moore's Law, however, requires continued transistor scaling and performance improvements. The

communication,

communication (e.g. micro-surgery, networks),

applications-Healthcare drug

delivery/target

aeronautics,transportation,communication, environmental communication for monitoring, pervasive Nano computing

physical gate length of the Si transistors used in the 90 nm logic generation node is ~ 30 nm. It is projected that transistor length will reach 10 nm in 2015. By way of such as

(e.g. pervasive sensing). are therefore expected

Nanotechnologies to enable the

production of smaller, cheaper and powerful devices with increasing efficiency. Keywords: Moore's law, Nantenna, Y-

innovation in silicon technology, strained-Si channels,

high-x/metal-gate

stacks, and the non-planar Tri-gate CMOS transistor architecture, CMOS transistor at

branch devices, quantum point, NEMS. I INTRODUCTION Electronics, nanotubes, and

. scaling and performance

will continue

least until the middle of the next decade. Recently, a lot of interest has been generated and good progress has been made in the study of novel silicon and non-silicon including

Molecular

Nanodevices address the state of the art in nanoelectronics. The semiconductor industry is undergoing a transition from standard

nanoelectronic Sinanowire

devices,

silicon interconnects to novel nanowires that include carbon nanotubes. New exciting

field-effect

transistors (FETs),

carbon-nanotube V compound

FETs (CNTFETs) and 1IIquantum-welt

opportunities in emerging materials will take system performance beyond that offered by traditional CMOS-based microelectronics. are bright for

semiconductor

FETs (QWFETs), in the capacity of future computation applications. These devices

Nanofabrication

possibilities

hold promise as candidates for integration with the ubiquitous silicon platform in order to enhance circuit functionality while of

future technologies. A. MOORE'S LAW Law, the number of circuit doubles

simultaneously

enabling

the extension

Moore's Law well into the next decade and According to Moore's transistors beyond. per integrated

II

NAND-ELECTRONIC

DEVICES

of less than 100nm in diameter. Fullerenes (carbon 60): Spherical molecule formed of

Below are mentioned presently used devices in the field of electronics. A. 1. NAND-MATERIALS Nanomaterial in one dimension:

hexagonal

carbon

structure

recently

discovered 1986. Dendrimers polymeric nanoscale molecules, formed

are spherical through a

hierarchical

self-assembly.

In this category belong nanomaterialssuch as thin films and engineered surfaces. This type of nanomaterial can't be really

process. (trivial definition: 3d polymer) 4. Nanocomposite silicate materials: nanolayer (clay

Nanoparticle

considered that have

as a new material considering been developed and used for

nanocomposites) and nanotubes can be used as reinforced mechanical filler not only to increase properties of nanocomposites

decades in fields such as electronic device manufacture, chemistry and engineering. 2. Nanomaterials in two dimension: such as are

but also to impart new properties (optical, electronic etc.) 5. Nanocoatings: surface coating with

Two dimensional tubes

nanomaterials

and wires. Halloysite nanotubes

nanometre thickness of nanomaterial can be used to improve properties scratch-resistant, hydrophobic properties. like wear and optoelectonics, Several key

hollow tubes with high aspect ratios that are tens to hundreds of nanometers (billionths of a meter) in diameter, with lengths typically ranging from about 500 nanometers to over 1.2 Nanowires are ultrafine microns. wires or Iinear by self-assembly.

emerging nanoelectronic devices, such as Si nanowire field-effect transistors (FETs),

carbon nanotube FETs, and III-V compound semiconductor quantum-well FETs, are

arrays of dots, formed

They can be made from a wide range of materials. of silicon, phosphide optical, Semiconductor gallium nanowires and made indium

assessed for their potential performance, low-power

in future highcomputation

nitride

applications. Furthermore, these devices are benchmarked against state-of-the-art Si

has demonstrated electronic and

remarkable magnetic

CMOS technologies.

characteristics. 3. Nanoscale in three dimensions:

Nanoparticles

are often defined as particles

B.

NANOSCALE TRANSISTORS transistors, the more atomic-

complex products

silicon using

chips and corresponding unreliable and variable

The smaller

devices.

scale variations
affect

in their size and structure and thus

whole

their

performance

the

reliability

of

circuit.

FIGURE 2: NANOTRANSISTORS Currently manufacturer

the

F FIGURE

lead

semiconductor

1:

MOLECULAR

is producing microchips with

TRANSISTORS
Figure 1 shows the different molecular

transistors less than 30 nanometres in size by comparison a human wide hair is around - but future

100 ,000 nanometres

transistor structures. This increased which presents variability a huge

IS

transistors will hav~ to be even smaller if computers a problem to the

C.

are to continue

to increase

in

power. SEMICONDUCTOR MEMORY Semiconductor memory

IS

barrier

continued

scaling of microchips of ever-more

and the powerful

FLASH

development

computers and electronic systems. The focus is to develop new design tools and

an important In

component of modem microelectronics.

methodology the nanoscale

for transistors and circuits at which will enable the low

Flash memories , the absence or presence of stored charge in the floating gate changes the threshold voltage of a transistor, and as such indicates logic levels 1 or O. Flash

manufacturing electromagnetic

of reliable,

low cost,

interference,

high-yield

"-";''''''devices have their own s~ issues: The high

._he.lDw the' Fermi energy in two of }he 3 .inject possible diroc1Ums_ ~ \ 1 dimensional wavegnffie- Da;mar,'., 'PBF
\

~~_;o'

jamrge~ft11he11o~vng

gate makes ,gate/drain

j unction. susceptible to HCI damage. Radiation from the may eject the trapped electrons floating nodes, with the

waveguideer

a single- moded optical fibre.

It is a natural question to ask, to what extent the well-known devices used for

manipulating, RF radiation or light signals can be rediscovered and employed for

corresponding loss of the information stored at the node. And finally, Stress induced leakage current (SILC, precursor to TDDB) caused by formation of bulk oxide defects is a major problem for Flash transistors. The SILC-related defects do not completely

electrons in electronic

Waveguide devices.

Indeed, it turns out that such an analogy is very useful and has' given inspiration to many beautiful and potentially fabricated useful by

electronic

devices

short the floating gate to the channel but the stored charge may be lost due to leakage, eventually resulting in memory failure. The bits with such excessive leakage are called "Anomalous bits" and even a small fraction of such bits may render a technology

nanotechnologies nanometer

to match the short (~ 40 electron wavelength

(nm))

normally encountered. Electronic waves have a cut-off in electron energy bel~w which no electronic wave can propagate;' above this energy a single-mode I-dimensional (lD) electronic system is energy
IS

unsuitable for practical applications. D. 1) AND DEVICES: Semiconductor quantum energy heterostructures may define giving sharp in the the WA VEINTERFERENCE ELECTRONIC QUANTUM DEVICES:

observed

until a characteristic

WAVEGUIDING INTERFERENCE

reached, above which two transverse modes can propagate. The transmission through

such an electronic waveguide gives rise to a fundamental h/2e2=12.9 macroscopic DC electrical per resistance mode. of The wells for electrons

kOhm

states

for the

electrons to

leads normally contain many

directions heterostructure

perpendicular

modes. The quantum resistance is due to the transition between this many-mode system to the ID electronic channel in question.

interfaces. It is possible to for electrons with only

fabricate channels

one (or a few) Eigen energies (or modes)

Again this is qualitatively analogous to the

matching. o.~~-spiitC waves being guided

cledlOrnagnetic into a square RF

balance between two values as for insjance

.

.a111

t#ilee,g ."j"fiiU';~'8~~in -

the J

waveguide by a-so-called microwave horn. The devices are based on the wave

vicinity lead to -wedJ_;s3in~e~~ resistance. Such a switching device does not rely on a capacitance and the switching may be potentially achieved without a transient current. Electronic utilized waveguides may therefore' be In much m a the same way as

properties of the electrons by controlling the constructive or destructive interference of two or more partial waves. For nanoscale devices these effects are generally much more sensitive to external electric field than the traditional field effect

variation

rrncrowaves

waveguide.

Some

presently used in most electronics. III THE BASICS OF COHERENT

preliminary waveguide devices do already exist. Examples are standing electron wave patterns
ill

SWITCHING AND INTERFERENCE An electronic confinement such as

in quantum

dots (cavities)

or

splitting electron waves and letting them subsequently interfere with each other

quantum well structures leads to a set of Eigen energies that can be calculated from the Schrodinger equation. The population of the electron energy states (following the Pauli principle) has to be taken into account, which adds extra charge to the quantum well which alters the potential energy due to capacitance or electron-electron interaction effects. The calculation of Eigen energies therefore involves a simultaneous and selfconsistent solution of the Poisson equation and the Schrodinger equation. The density of electrons and hence the confmement changed necessary by an external gate and it
IS IS

(directional couplers). Phenomena are observed in so called stub

'r

tuner structures, where effectively the length of a reflecting arm is modulated, causing interference via the reflected electron wave. . 1) QUANTUM POINT CONTACTS AND

ELECTRONIC WAVEGUIDES This section introduces the quantum point contacts (QPCs) and electron waveguides as the general building blocks for the

waveguide devices. In the remaining parts of this section on waveguide devices we

describe a set of different devices which contain combinations of these ,~ building blocks, together having different
".

to solve the new state self-

different

consistently. In a case where for instance the electrical resistance comes out as a delicate

functional properties. The fact~~t

electrons

are Fermi particles leads to a characteristic dissipation dimensional higher less conductance through one-

narrowed

down

by

coupling

Via

two

coupling contacts along

the 1D channels dot)

channels, where coupling to a background regions

forming an artificial atom (quantum with a discrete energy similar to the coupling traditional rmcrowave

dimensional

spectrum. This is via a cavity techniques. in The

leads to a characteristic "contact" resistances of h/2e2=12.9 quantization kOhrn. The conductance

is sharp for short pieces of

resonant coupling at a ID-OD-ID electron system has shown to exhibit negative

electronic waveguides, also called normally termed. quantum point contacts. This

differential conductance. 2) THE 3-TERMINAL (Y-BRANCH)

quantization wave

is a clear sign of electronic that can be observed in

guiding

SWITCHING DEVICES "Artificial" electrostatic atoms can be made by

channels

up. to Lengths of about

10 mm.

This length sets the limit for the extension of coherent electronic waveguide, but there is no reason to believe that this is an intrinsic limit. The quantized nuisance particularly for resistance the is
III

confinement of a 2D electron

gas in the two lateral directions. To produce a 3-termirtal device, such an "atom" must be coupled to some leads in a waveguide

general a

structure. The simplest 3-terminal concept is a confined region with three electronic

practical the

applications, free space

because

waveguides leading into one middle region. Due to its form it is generally called a Ybranch device. The very open structure at the Y-junction permits no states modified Coulomb

impedance is 377 Ohm and typical strip line or coplanar impedance interference waveguide below effect this with have characteristic value. an For an

electronic

blockade. junction

The extended are strongly

ill

the

Y-

waveguide at high (microwave) frequencies without extensive loss, a built-in amplifier or a switch with conductance, such a negative as found differential in resonant

and the

transmission right drain

from source to either left or is a delicate balance, which solution

depends on the full self-consistent

tunnel diodes, is required . Two ID electron systems may couple to each other in several ways where the broad band transmission through the waveguides is

in this region. A slight change of geometry where a bias on the left or right gate may very quickly switch the two drains between high (2e2/h) and low conductance.

source-left drain and source - right drain can be observed The fact that the stem copies the most

negative of the voltages applied to the two other electrodes rectification up makes it a candidate for to the 1Hz regime.

Furthermore, it bas been shown that such Ybranch devices provide Properties suitable for logical circuits. Strictly speaking, this is, however, neither an interference device nor FIGURE 3: Y-BRANCH SWITCH (Scanning electron microscope (SEM) picture of a hetero structure defined Ybranch switch.) a waveguide device, since the thermal

energy is larger than the typical Fermi or sub band energies in the Y-j unction. The etched ridges support a ID electronic waveguide, which carries currents from the

This switch is a result of an amplified effect of changing rearrangement the confinement; of charge on i.e. a small the gate

upper source region to either of the two lower drain regions. The left or the right gate voltages give rise to an abrupt

capacitance has due to the wave-mechanics a big influence on the transmission in one or both source-drain channels. The limitation

switching in resistance between the source and the left (or right) drain. The switching is governed by large wave guiding changes at the Y branch point and only indirectly due to charging effects. IV. MAJOR CHALLENGES FOR AND

of this device is its intrinsic low working temperature, which is needs that the sub

band and Fermi energies are larger than the thermal energies, i.e. below 50 K. For such a Y-branch device, the mean free path length for ballistic coupling is in the order of 100200 nm devices at room fulfilling temperature. this criterion Y-branch can be

DIFFICULTIES INTERFERENCE DEVICES A. Fabrication

ELECTRON SWITCHING

AND

tolerances

and

temperature limits: Quantum mechanical interference driven by a gate voltage or a magnetic field requires

produced so that QPC coupling between the

that the states that are responsible for the interference have a coherence length that is longer than the region over which the

transmission line impedance of 50-400 Ohm will lead to a considerable loss of signal

unless special measures are taken to match impedances. The obvious way is to work devices with a built-in devices) (HEMn or by

coherence occurs. In order to have a simple type of interference the geometry must be

with waveguide amplification having an

simple with a small number of unintended electron scattering points in the sample. The interference once the effect will be destroyed energy becomes

(switching amplifier

closely

integrated in the designed waveguide circuit limiting the frequency response to about 0.1 THz. The impedance problem will be a

thermal

comparable to the lowest energy differences in the system causing the interference. In an ideal 1D-system difference waveguide corresponding energy of it is the sub band. energy

major challenge for any nm. circuit that may become relevant for high frequencies in the future.
C.

that sets the limit. For a ID with to a sub 1-10 meV, a confmement band separation the maximum

Periodic versus on-off devices interference phenomena discussed

The

above comes about as a quantum mechanical phase shift between two partial waves giving a periodic, often sinusoidal, variation of the conductance with the externally applied

temperature will then be 5-50 K. To reach room temperature the device sizes must be

smaller than 10 nm.

magnetic or electrical fields. The periodic B. High frequency limitations in coherence phenomena and response leads to the same conductance for several different external field values; this is generally not desired and preferentially there should be a one to one correspondence between input and output. Most application will require a digital signal handling and the switching devices mentioned above may

The interest switching

is particularly usage

pointing towards up to THz. The of 1D

high frequency

existence of a minimum resistance

devices, given by the resistance quantization value h/2e2=12.9 intrinsic problem. kOhm This is however resistance an

always appear in series value. between The strong

.will with the modulated

mismatch the typical and

therefore be most suitable. V. A. EMERGING DEVICES Single Electron Tunneling Devices

impedance

12.9

kOhm

 A Single Electron Tunn~ce is a three terminal Coulomb .device based on .the

_fttitMi::t~-:

A Yano-Type Memory is a two terytinal cdev2c.e ~~::stBiM-~eF ~

.. '" -TIapS in poly-~

b~-gf-Mrere-'lhe

..

electrons o~. ap i~d

(or dot) is controlled

A Nano-Flash Memory is a three terminal device without a tunnel barrier between

by a gate. The island (or dot) may have up to thousands of electrons depending on the size and material.

source and drain but has a floating gate between the driven gate and the transistor channel. When fabricated at nanoscale

dimensions, the increase of charge by one

~ ...

-~

I--_Ur'~
.'

.'/-:

~.

_--'00{

electron causes an abrupt shift in the turn off voltage . VI. TELECOMMUNICATIO 'S

.:\ -r=
FIGURE

l ..

A.

INFORMATION PROCESSING processors manipulate and

4:

PRINCIPLE

OF

Information interpret

SINGLE TRANSISTOR
(a) no electrons

gathered

or sensed

data. The

ELECTRON

exponential development of microelectronic integrated circuit technology throughout the

may flow from one

last

half

century

has

driven

an

electrode to the other if the applied voltage, V, is such that ~N+1 > ~I ;'This state is known as Coulomb blockade (b) If the voltage between the electrodes is increased such that ~I > ~N+1 > W , then the empty states in the island are populated and single electrons can

unprecedented

revolution.

in information

processing capacity and speed. With the development and commercial

introduction of 65nm complementary metaloxide-semiconductor the semiconductor (CMOS) industry technology, has already frontier.These

tunnel through the island. To change the Fermi level of the island a gate may be used that switches the single electron current on or off.

crossed the nanoelectronics

trends are expected to continue until the feature size of silicon based nano-electronics reaches 22nm or perhaps even 16nm.Then the fundamental physical limits to the size of

conventional dissipate improvements. B. How

devices and the power they will prevent additional

technologies and cross-disciplinary

research

in many ways. Embedding intelligent and autonomous devices into physical objects of the world requires that devices adapt to their

SENSORS Can Nanotechnology Improve the

environment

and

become a part of the

network of devices surrounding them. There is no way to configure this kind of a huge system manually - top down. Nanotechnology can help to develop novel

Performance of Sensors? The application of nanotechnology

ill

to sensors nanotechnology allow improvements

ill

should

functionality. technology

In particular, combined

new biosensor micro and a

kind of intelligent devices where learning is one of the key characteristic properties of the system, similarly to biological systems which grow and adapt to the environment autonomously. Nanotechnologies may open

with

nanofabrication

technology

can deliver

huge range of applications. They should also lead to much decreased size, enabling the integration of 'nanosensors' devices. an Micromechanical part into many other sensors became of automotive

solutions for sensors that are robust in harsh environmental conditions and that are stable over long period of time. Today mechanical sensors - pressure and acceleration sensors are already demonstrated to fulfill these

elementary

technologies in mid 1990, roughly ten years later more miniaturized are enabling micromechanical features for

sensors consumer
~

novel

requirements, but we do not have chemical or biochemical robust enough. sensors that are stable or Furthermore, the future

electronics

and mobile devices of on

within next ten years the development truly embedded sensors based

embedded sensors need to be so inexpensive and ecologically sustainable that they can be used in very large nwnbers. 1) Future Prospects

nanostructures everyday

will become a part of our intelligent environments. the

Nanotechnologies

may also augment

sensory skills of humans based on wearable or embedded sensors and the capabilities to aggregate this immense global sensory data into meaningful life. information This requires for our novel

We can also expect to see actuators that control movement on the nanoscale. will deliver in products

Sensor/actuator 'smart'

combinations

and precise functions

everyday
v

and processes. For example, nanofabrication

and

inspection

tools require

sensors and

for

solar

cells,

large-area

transparent

actuator with sensors

systems that can position objects accuracy. In this way, another

transistors,

and heating elements based on

nanometre

nanotube networks. Following sections can be described: Nanotube manipulation: We can

and actuators

constitute

enabling technology. C. Nanotubes and their Applications

Companies to consider using them in several fields. nanotubes weight For example, because carbon to

manipulate

the nanotube positions, change

their shape, cut them and place them on electrodes.

have ratio of

the highest any

strength

known

material,

Molecular the

mechanics: mechanical

We can behavior of

researchers at NASA are combining carbon nanotubes composites Nanotube with that other can be are materials into

simulate nanotubes

by calculating the forces acting

used. to build prepared by

between nanotubes and other objects such as the substrate. Nanotube Field-Effect Transistor:

networks

adsorbing nanotubes on surfaces (spraying, dip-coating, electroplating) or by mixing

We have successfully used semiconducting single and multi-walled nanotubes as

nanotubes into matrixes (polymers, metals, ceramics). This will give an introduction

channels of field-effect transistors.

into the physics of electrically conducting networks (charge carrier localization,

interference phenomena, sample specific noise, thermally assisted tunneling),

lightweight spacecraft. This will summarize the state of the art of material performance (interplay of optical transparency and electrical conductivity, microwave compatibility, shielding, dissipation electromagnetic of electrostatic FIGURE 5: NANOTUBE STRUCTURE charges), and will discuss selected industrial applications: transparent conducting films

Nanotube

rings:

While

normally

D. In

NANOSCALE ANTENNAE telecom applications, the detection

nanotubes

are straight, we have devised

ways to prepare them in a ring form. theory Nanotube of the theory: Computation electrical and and

devices typically used for light detection are well based on the semiconductor

mechanical

technology. A nantenna is an electromagnetic collector

properties. Incredible nanotechnologies nanonetworks nanomachines. Communicating with each other for a specific nanoscale application. Due to size and capabilities of nanomachinesthat may constitute molecules, of just several atoms or improvements m

designed to absorb specific wavelengths that are proportional to the size of the nantenna. Currently, Idaho National Laboratories has designed a nantenna to absorb wavelengths in the range of 3-15 um . have enabled the vision of

composed of a number of

traditional

communication inapplicable in nanoscale currently molecular FIGURE 6: A nano antenna radio

mechanisms are deemed nanonetworks. communication under Many

novel are as

paradigms such

investigation

frequency receiver/transmitter.

communication,

communication over carbon It measures only 10.Tmicrons long and 400 nm wide. These wavelengths correspond to

nanotubes and nanowires. Recent work has also revealed that nanoscale physical with each

devices naturally

communicate

photon energies of 0.08-0.4 eV. Based on antenna theory, a nantenna can absorb any wavelength of light efficiently provided that the size of the nantenna is optimized for that specific would wavelength. be used between to Ideally,. absorb 0.4-1.6 ~ nanteaaas light at

other through various quantum phenomena, which makes nanoscale communication also closely rel~ to the quantum based

communica~ on princip~M

networks structured

Af ~tum

entanglement.

wavelengths

because

these wavelengths have higher energy than

infrared (shorter wavelength) and make up about 85% of the solar radiation spectrum.

material can be approximated quite well by a low-cost containing solution, using colloidal nanocrystals ink to

semiconductor

VII

EMERGING

COMMERCIAL OF NANO

create a bulk material

while retaining the

APPLICATIONS ELECTRONICS Nanoscale properties

nano properties. Some of the first markets for this technology industry, will be in it the could

semiconductor enable improved thermoelectric , NEMS gas sensors because of the scale on which they can function. NEMS are expected to significantly impact many areas of technology and science and eventually replace MEMS. First application The much-hyped the nanoscale properties of materials at are finally starting to be sophisticated

where

enable efficient, flexible, solid-state cooling for integrated circuits and LEOs. This could greatly reduce the size or need for a heat sink, he argues, and .performance. is likely to be for less cooling, though, potentially improve

solid-state

such as spot cooling

for things like wine

applied to some real electronics applications, ranging material from near-ideal thermoelectric

coolers. But eventual markets for low-cost roll-to-roll coated thermoelectric films could also include waste heat recovery in

based on spray-on semiconductor

nanocrystals, to transparent conductive films made from on carbon nanotubes assembled silver and self to

automobiles

and central

power

stations,

general heating and cooling, and even power generation transparent innovative .likely closer to market films to are using

nanopartic1es,

ultrasensitive nanoscale MEMS gas sensors. Nanoscale materials properties are enabling efficient, low-cost thermoelectric Though long studied , materials.

conductive nanomaterials

potentially

challenge. Pushing MEMS (Micro-ElectroMechanical Systems) to the nanoscale opens up new potential as well. This means

thermoelectric

conversion of heat to electricity has never been efficient enough to be practical for ,most applications. Modeling suggests that

MEMS-based detectors in an electronic nose can be made significantly more sensitive, as well as scaled xlown in size by about a million fold, compared to the existing state-

the most efficient structure would be point sources of excited electrons distributed

evenly in a matrix-and

that ideal efficient

of-the-art-and scale processes.

made

with efficient

wafer-

nanodevices used in the field of electronics and telecommunication. basics of coherent We also studied the switching and

Alliance for Nanosystems VLSI for the final stage of developing the MEMS and CMOS processes low-cost to integrate gas-phase them into practical chemical sensors, to

interferences and discussed quantum pots as well as electronic waveguides. We briefly looked at some problems in the implementation of switching systems. In the . end, a light was thrown on emerging

monitor toxic industrial gases and gas phase processes, or to analyze human breath to

detect diseases. The detectors are essentially arrays of nanoscale MEMS resonators-fancy

commercial applications of nano-electronics. ACKNOWLEDGMENT

versions of guitar strings-set within MEMS flow channels. The resonators are coated We would like to thank Prof. N. Srivastava for his sincere help leading us to the

with a kind of chemical sponge that absorbs the target material, which changes the mass of the resonator. The gas is first sent through a chip scale version of a gas chromatograph process, to simplify the identification

completion of the document. REFERENCES: [1] A To Z Of Nanotechnolgy,

problem. Though first markets will likely be military and industrial, the most interesting potential may be in medical diagnostics, All these structures can be made at 90nrn,

http://www.azonano.com [2] A. A. Baladin, "Nanoscale thermal

management," IEEE Potentials, pp.II-15. [3] Memory Brown Chip J. and A. Pohm"l-Mb Giant Magneto'

though 45nrn would

be preferable device

Using

arrays successfully being produced at waferscale, current efforts precursor systems are directed towards including surface

resistive Memory Cells",

IEEE Trans on

Camp, Pack and Manu fact Techno. [4] and Centre for Ultra structure Research Ludwig Boltzmann Institute for

chemical fictionalization and integration en masse with both MEMS flow channels and CMOS circuits for data post processing. VHl CONCLUSION

Molecule http://www.boku.ac.atlzu. [5] Thess,

Nanotechnology

Collins, P.G., A. Zettl, H. Bando, A. and R.E. Smalley. Nanotube

In

this

paper

we

discussed

vanous
v.

nanodevice. Science 278: 100

[6]

D. B. Rutledge,

M. S. Muha, IEEE

http://europa.eu.int/commlresearchlera/pdf/n anoexpertgroupreport. pdf [15] Nanotechnology: a huge a small SCIence potential,

Transaction on Antennas and Propagation. [7] Institute of Nanotechnology list of nano sites

provides

substantial

with

http.z/www.nano.org. uk! [8] In Proc. MEMS98, IEEE 11th

http://europa.eu-int/commlresearchlgrowthlg cc/projects/in-action-nanotechnology [16] for NANOTECHNOLOGY Nanoelectronics .html Roadmap 2000,

Annual International Workshop on MEMS. [9] F. J. Gonzalez, B. Ilic, J. AIda, G.

Boreman, IEEE Journal of Selected Topics in Quantum Electronics

http://www.cordis.lu/istlfetnidqfhtm [17] Nanotechnology Applications and to

[lOJ

Joint

EClNational Workshop 1,

Science on

Telecommunications Daniel Minoli. [18] ," Sohail Anwar"

Networking,

Foundation Nanotechnologies200

ftp://ftp.cordis.lu/pub/nanotechnology/docs/ nano_workshop~roceedings.pdf

Nanotechnology for Telecommunications [19] Nanotechnology m fact the United sheet

[11]

Jeong G.J. and M.K. Lee, "Design of States"NSF IEEE http://www.nsfgov/odJIpainews/medial2000 /fsnano2001.htm

a Scalable Pipelined RAM System", 1.Solid State Circuits [12]

J. P. M. She and 1. T. W. Yeow, Wireless Sensor [20] Nanoelectronics And Information

"Nanotechnology-Enabled

Networks: Overcoming the Limitations from a Device Perspective," in Proceedings of the IEEE International and Conference Automation, on

Technology, [21] an

Rainer Waser.

Palm T. and L Thylen "Analysis of electron wave

Y -branch

switch"

Mechatronics Falls, Canada. [l3] device Lent,

Niagara

Appl.Phys.Lett, [22] Societal Implications ofNanoscience Nanotechnology March 2001

c.,

and D. Tougaw,

1997. A with

and

architecture

for computing

http://itri.loyola.edu/nano/societalimpactlnan osi.pdf

quantum dots. In Proc. IEEE. [14] Mapping Of 2001 Excellence:

[23]

Wang Z. and Y. Nakamura, IEEE

Nanotechnologies.

Trans. Magn

[24]

Wdliamson

W. et al.

"12 GJJr- -

. Mrs.S.P.Gaikwad . B.E.degree from

received

clocked operation of ultIalow powec inter band resonant tunneling diode pipelined

in Electronics

Shivaji University,

logic gates" IEEE J. Solid State Circuits [25] Yano K.. et al, IEEE Trans.. On Vidyapeeth

Kolhapur, M.E. degree in Electronics Deemed form Bharati She is

Electron Devices.

University.

currently working as Assistant Professor in the Department of Electronics, BVDUCOE, Pune. She is interested in developing and Miss Maansi her Bhasin is B Tech
&

studying new algorithms, architectures, and technologies efficiency. that enhance network

pursuing degree

in Electronics

Telecommunications from Bharati Deemed interest University. concerns Vidyapeeth field of

"

Mrs.S.P. Tondare

received

Her main

B.E. and M.E. degree in Biomedical from m Engineering

the telecommunications

networks and has a mainline interest to work in the area by making use of her analytical and practical approach.

Mumbai University
2003

and

2005

respectively. She is currently working as a Lecturer in the Department of Electronics, BVDUCOE, Pune. Her area of interest in the field of Biomedical Instrumentation and

Miss Kasturi
pursuing

Misbia is

Biomaterials,

her B Tech

degree in Electronics & Telecommunications from Bharati Vidyapeeth Deemed University. Her orientation is towards research in Signal and Video Processing.