BTA24BW/CW BTB24BW/CW

SNUBBERLESS TRIACS

. . . .

FEATURES HIGH COMMUTATION : (dI/dt)c > 22A/ms without snubber HIGH SURGE CURRENT : ITSM = 250A VDRM UP TO 800V BTA family: Insulated voltage = 2500V(RMS) (UL RECOGNIZED : E81734)

DESCRIPTION The BTA/BTB24 BW/CW triac family are high performance glass passivated chips technology. The SNUBBERLESS concept offers suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s Parameter BTA BTB Tc = 75 C Tc = 95 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Value 25 25 260 250 312 20 100 - 40 to + 150 - 40 to + 125 260 C C C A2s A/s Unit A A A
G A1 A2

TO220AB (Plastic)

ITSM

I2t dI/dt

Symbol

Parameter

BTA/BTB24-... BW/CW 600 700 700 800 800

Unit

VDRM VRRM

Repetitive peak off-state voltage Tj = 125 C

600

August 1998 Ed : 2A

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BTA/BTB24 BW/CW
THERMAL RESISTANCES
Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 2.3 1.3 1.7 1.0 Unit C/W C/W C/W C/W C/W

Rth (j-c) DC Junction to case for DC

GATE CHARACTERISTICS (maximum values)

PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s).

ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant Suffix BW IGT VD=12V (DC) RL=33 Tj=25C I-II-III MIN MAX VGT VGD IL VD=12V (DC) RL=33 Tj=25C Tj=125C Tj=25C I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * (dI/dt)c * IT= 250mA gate open ITM= 35A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open Without snubber Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C Tj=125C MAX MIN MAX MAX MAX MAX MAX MAX MIN MIN 1000 22 60 120 75 1.5 5 3 500 13 4 50 1.3 0.2 50 80 50 mA V A mA V/s A/ms CW 2 35 V V mA mA Unit

VD=VDRM RL=3.3k IG=1.2 IGT

* For either polarity of electrode A2 voltage with reference to electrode A1.

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BTA/BTB24 BW/CW
ORDERING INFORMATION
Package IT(RMS) A BTA (Insulated) 25 VDRM / VRRM V 600 700 800 BTB (Uninsulated) 25 600 700 800 Sensitivity Specification BW X X X X X X CW X X X X X X

Fig.1 : Maximum RMS power dissipation versus RMS on-state current.

P(W) 30

25 20 15

10
180

5 0 0

IT(RMS)(A)
5 10 15

20

25

Fig.2 : Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. (BTA)
P(W)
Rth=0C/W

Fig.3 : Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact.(BTB)
P(W) Tcase (C)
95
Rth=0C/W Rth=3C/W

30 25 20 15 10 5

Tcase (C)
75 85

30 25 20

100
Rth=2C/W

Rth=3C/W

105
Rth=1C/W

95
Rth=2C/W

15 10 5 0 0

110 115 120

105
Rth=1C/W

115

Tamb(C)

Tamb(C)

20

40

60

80

100

120

140

125

20

40

60

80

100

120

140

125

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BTA/BTB24 BW/CW
Fig.4 : RMS on-state current versus case temperature. Fig.5 : Relative variation of thermal impedance versus pulse duration.
K=[Zth/Rth] 1.00

Zth(j-c)

30 25 20 15 10 5

IT(rms)(A)

BTB BTA
0.10
Zth(j-a)

Tcase(C) 0 0 25 50 75 100 125

0.01 1E-3 1E-2 1E-1

tp(s) 1E+0 1E+1 1E+2 5E+2

Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature (typical values).
IGT,IH[Tj]/IG,IH[Tj=25C]

Fig.7 : Non Repetitive surge peak on-state current versus number of cycles.

2.5 2.0

IGT
1.5 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140

IH

220 200 180 160 140 120 100 80 60 40 20 0

ITSM(A)
Tj initial=25C F=50Hz

Number of cycles 1 10 100 1000

Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.

Fig.9 : On-state characteristics (maximum values).

1000

ITSM(A),It(As)
ITSM
Tj initial=25C

300 100

ITM(A)

500
Tj=Tj max.

It
10
200 tp(ms) 100 1 2 5 10
Tj=25C

Tj max.: Vto=0.85V Rt=16m

VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

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BTA/BTB24 BW/CW
PACKAGE MECHANICAL DATA TO220AB Plastic

REF.

b2

L F I A

l4

a1

c2

l3
l2 a2

b1 e

M c1

A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M

DIMENSIONS Millimeters Inches Min. Max. Min. Max. 15.20 15.90 0.598 0.625 3.50 4.20 0.137 0.165 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 16.40 Typ. 0.646 Typ. 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 Typ. 0.102 Typ.

Cooling method : C Marking : type number Weight : 2.1 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

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