SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK

PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-1 1. Explain about semiconductor, Insulator & Conductor with neat sketch. 2. (a) Explain about diffusion capacitance in detail. (b) Derive an expression for diffusion capacitance. 3. Explain N type & P type Semiconductors. 4. Derive an expression for total diode current starting from Boltzmann relationship in terms of the applied voltage. 5. Explain the operation of silicon p n junction diode and obtain the forward bias and reverse bias Volt Ampere characteristics. 6. Difference between i) Static and dynamic resistances of a p n diode. 7. Transition and Diffusion capacitances of a p n diode. 8. Volt Ampere characteristics of a single silicon p n diode and two indetical silicon p- n diodes connected in parallel. 9. Avalanche and zener break down mechanisms. 10Define the following terms for a PN diode i) Dynamic resistance ii) Load line iii) diffusion capacitance iv) Reverse saturation current 11. Explain about Transition capacitance in detail. 12. Explain the operation of Zener diode and obtain the forward bias and reverse bias Volt Ampere characteristics. 13. Explain about temperature characteristics of a single silicon p n diode. 14. Explain the formation of depletion region. 15. Explain the energy band diagram of open circuited p-n junction 16. Explain any one application of Zener diode in detail.

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

Problems: 17. The reverse saturation current of a silicon p n function diode at an operating temperature of 270C is 50 nA. Compute the dynamic forward and reverse resistances of the diode for applied voltages of 0.8 V and -0.4 V respectively. 18. Obtain the transition capacitance CT of a junction diode at a reverse bias voltage of 12 V if CT of the diode is given as 15 PF at a reverse bias of 8 V. Differentiate between transition and diffusion capacitances. 19. A reverse bias voltage of 90V is applied to a Germanium diode through a resistance R. The reverse saturation current of the diode is 50 A at an operating temperature of 250C. Compute the diode current and voltage for i) R = 10 M ii) R = 100 K 20. In a Zener diode regulator, the supply voltage = 300V, V = 220V, I = 15mA and load
z z

current = 25mA. Calculate the value of resistor required to be connected in series with the Zener diode. 21. Design a zener shunt voltage regulator4 with the following speci_cations.V0 = 10V, Vin = (20-30)V, IL (30-50)mA, I2 = (20-40)mA.

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-2 1. Draw the circuit diagram of a FWR: With centre tap connection 2. Derive all the necessary parameters of HWR. 3. Write a short note on multiple L- Section and multiple _ - Section Filter. 4. Compare all the filter circuits from the point of view of ripple factor. 5. Define the following terms of a rectifier and filter: i) Ripple Factor ii) Regulation iii) Rectification Efficiency iv) Form Factor 6. Derive the expression for the ripple factor of -Section filter when used with a Half-waverectifier. Make necessary approximations. 7. Draw the circuit of bridge rectifier and explain its operation with the help of input and output waveforms. 8. Draw the circuit of a half-wave-rectifier and find out the ripple factor, % regulation, efficiency and PIV. 9. Compare the performance of Inductor filter and capacitor filter. 10. With suitable diagrams, explain the working of centre-tapped full wave rectifier. Derive expressions for V , I , V and I for it.
DC DC rms rms

11. What is bleeder resistance in L section filters? 12. List out the merits and demerits of Bridge type Full Wave rectifiers over centre tapped type Full Wave rectifiers. 13. Define Ripple factor and form factor. Establish a relation between them Problems: 1. What is the ripple factor if a power supply of 220 V, 50 Hz is to be Full Wave rectified and filtered with a 220F capacitor before delivering to a resistive load of 120? Compute the value of the capacitor for the ripple factor to be less than 15% 2. Compute the average and RMS load currents, TUF of an unfiltered centre tapped Full Wave Rectifier specified below. Input voltage to transformer = 220 V/50 Hz. Step down ratio of centre tapped transformer = 4:1(Primary to each section secondary). Sum of transformer

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

secondary winding in each secondary segment and diode forward resistance = 100. Load resistance, R = 220.
L

3. Compute ripple factor of an L section choke input filter used at the output of a Full wave rectifier.nd capacitor values of the filter are given as 10 H and 8.2 F respectively. 4. The secondary voltages of a centre tapped transformer are given as 60V-0V-60V the total resistance of secondary coil and forward diode resistance of each section of transformer secondary is 62 . Compute the following for a load resistance of 1 K. i) Average load current ii) Percentage load regulation iii) Rectification efficiency iv) Ripple factor for 240 V/50Hz supply to primary of transformer. 5. A FWR makes use of a - section filter with two 8f capacitors and one 20 H choke. The secondary voltage is 300 V w.r.t center tap. If the load current is 40mA, determine the D.C output voltage and ripple without neglecting the choke resistance of 300.

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-3 1. Define a Transistor. What are the differences between Bipolar Junction transistor & Field effect Transistor? 2. Write applications of transistor. 3. With necessary diagram explain the input & output characteristics of common Emitter configuration. 4. Draw the energy variation curve in the conduction band for an open circuited n-p-n transistor. How is the curve modified when the transistor is operating in active region? 5. Explain the constructional details of Bipolar Junction Transistor. 6. Explain Current Amplification in CE configuration. 7. Draw the circuit diagram of a transistor in CB configuration and explain the output characteristics with the help of different regions. 8. Explain different current components in a transistor. 9. Write short notes on Early effect. 10. Compare the characteristics of a BJT in CB, CE and CC configurations. 11. Describe the significance of the terms, and . Establish a relation between them. 12. Describe the functioning of a BJT in common base configuration. 13. How do you identify the region of operation of a BJT to be saturation region from the values of various circuit currents?

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

Problems: 1. A silicon n-p-n transistor with = 0.995 and I =15 nA, operates in the CE configuration.
CO

What is the collector current for a base current of 20A? 2. In a germanium transistor collector current is 51mA, when current is 0.4mA. If h = =
fe dc

125, Calculate cut off current, I 3.

N

CEO

.
CO

For an NPN transistor with = 0.98, J

= 2A and I

EO

= 1.6A connected in Common

Emitter Configuration, calculate the minimum base current for which the transistor enters into saturation region. V and load resistance are given as 12 V and 4.0 K respectively.
CC

4. A Silicon BJT is connected in common Emitter configuration with collector to Base bias. Calculate the base resistance R for the quiescent collector to Emitter voltage,
b

V V

CE BE

has to be 4 V. V

CC

and R are given as 12 V and 1 K respectively. Assume = 100,

C

to be zero volts. Also find the stability factor of the circuit.

5. A transistor is operated at a forward emitter current of 2 mA and with the collector open circuited. Assuming = 0.98, I = 1.6 A and I = 2 A, determine i) The junction
N EO CO

voltages V and V ii) The collector to Emitter voltage V

C E

CE

iii) The region of transistor

operation (Saturation/Active/Cut-off). Assume any other values necessary.

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-4 1. Explain the criteria for fixing operating point. 2. List out the different types of biasing methods. 3. Explain the simpler way of drawing dc load line. 4. Explain how self biasing can be done in a BJT with relevant sketches and waveforms. 5. Explain how biasing is provided to a transistor through potential divider bias. List the assumptions made. 6. List the need of bias compensation methods. 7. Justify statement Potential divider bias is the most commonly used biasing method for BJT circuits. Explain how bias compensation can be done in such biasing through diodes. 8. Describe the significance of operating point, DC and AC load lines to ensure active region operation of a BJT in CE amplifier application. 9. Calculate the Q point for the DC biased circuit. 10. What are the factors that effect the stability of operating point? Discuss. 11. Define stability factor. Derive the expression for stability factor for a self biased CE amplifier circuit.

Problems: 1. Design a self bias circuit for the following specifications: V

fe CC

= 12 V; V

CE

= 2V; I = 4mA;
C

h = 80. Assume any other design parameters required. Draw the designed circuit. 2. An NPN transistor with = 50 is used in common Emitter configuration with V
C CC

= 10V

and R = 2.2 K. Biasing is done through a 100 K resistance from collector to Base. Assuming V
BE

to be zero volts, Find i) The quiescent point ii) The stability Factor, S.

3. An NPN transistor with = 100 is used in common Emitter configuration with Collector to Base bias. If VCC = 10 V, RC = 1 K and VBE = 0 V, determine i) R such that quiescent
b

Collector to Emitter Voltage is 4V. ii) The stability factor, S.

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-5 1. Draw the low frequency hybrid equivalent. Circuit for CE & CB amplifier. 2. Give the approximate h-parameter conversion formulae for CB and CC configuration in terms of CE. 3. Give the advantages of h-parameter analysis. 4. Give the procedure to form the approximate h - model from exact h - model Of amplifier. 5. Derive the expressions for voltage gain, current gain, I/P impedance, O/P impedance of CE amplifier, using exact & approximate model. 6. Explain the concept of biasing for amplification and principle of amplification with a BJT. 7. Draw the hybrid equivalent circuit of an NPN BJT in CE configuration. Derive the expressions for A , A , R and R .
V I in O

8. Define all the four hybrid parameters of a BJT in CE configuration. Draw the circuit and its equivalent circuit. 9. With the help of a hybrid equivalent circuit of a BJT amplifier, derive expressions for voltage gain and current gain when the source and load resistances of finite values are connected. 10. List out the typical values of h parameters in the three BJT configurations (CE, CB and CC). 11. Describe how h and h can be determine from BJT characteristics.
ie fe

12. Draw the circuit diagram of CC amplifier using hybrid parameters and derive expressions for A , A , R , R .
I V i O

13. Compare the three transistor amplifier configurations with related to A , A , R and R .
I V i O

Problems: 1. Determine Zi, Zo and AV for the following network for the specifications listed below. H = 110; h = 1.1 k; h = 210 and hoe = 20 A/V
fe ie re -4

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

2. The source and load resistances connected to a BJT amplifier in CE configuration are 680 and 1 K respectively. Calculate the voltage gain A and the input resistance R if the hV i

parameters are listed as h = 1.1 k; h = 210 ; h = 50 and h = 20 mhas. Compute A

ie re fe oe

-4

and R using both approximate and exact analysis.

i

3. For the emitter follower with R = 0.5K, R = 50K, h = -50, h = 1K, h = 25A/V, h = 1.
S L fe ie oe re

Calculate A , A , Z and Z .
V I i O

4. A given transistor with I = 10mA, V

C ie

CE

= 10V and at room temperature has the following

-5 -4 oe fe re

set of low frequency parameters: h = 500, h = 10 A/V, h = 100, h = 10 . Find the values of the entire hybrid - parameters of a low frequency model.

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-6 1. Bring out neat comparison between JFET and MOSFET. 2. List the advantages and disadvantages of FET over MOSFET. 3. The field effect transistor is called a voltage-sensitive electronic control device. Explain why is the case? 4. Name and define the circuit parameters of the JFET. How are they related to each other? 5.Sketch the drain characteristics of MOSFET for different values of V & mark different regions
GS

of operation.

6. Give the construction details of JFET and explain its operation

7. Explain the working of MOSFET in i) Enhancement mode ii) Depletion mode. Draw the necessary diagrams and graphs. 8. Explain the operation of FET with its characteristics and explain the different regions in transfer characteristics 9. The field effect transistor is called a voltage-sensitive electronic control device. Explain why is the case? 10. Name and define the circuit parameters of the JFET. How are they related to each other? 11. Bring out neat comparison between JFET and MOSFET. 12. List the advantages and disadvantages of FET over MOSFET.

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-7 1. Write the expressions for mid-frequency gain of a FET Common Source Amplifier. 2. Discuss the high frequency response of CD Configuration. 3. What is the effect of external source resistance on the voltage gain of a common source amplifier? Explain with necessary derivations. 4. How a small signal high frequency model is different from a low-frequency model? Explain it briefly. 5. Give the construction details of UJT & explain its operation with the help of equivalent circuits. 6. Compare BJT & FET. 7. Write short notes on applications of FET as a voltage variable resistor. 8. Explain the principle of CS amplifier with the help of circuit diagram. Derive the expressions for A , input impedance and output impedance.
V

SREE DATTHA INSTITUTE OF ENGINEERING AND SCIENCE (SDES)

DEPARTMENT OF ECE ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK
PREPARED BY Mr.K.VINOD KUMAR, ASST.PROFESSOR

UNIT-8 1. Explain the construction and working of photo diode. 2. Sketch the static characteristics and firing characteristics of SCR and explain the shape of the curve. 3. Explain the working of Tunnel diode with help of energy band diagrams. 4. Explain Schottky diode with necessary sketches. 5. Write in detail: i) Varactor diode with necessary sketches. 6. Explain the tunneling phenomenon. Explain the characteristics of tunnel diode with the help of necessary energy band diagrams. 7. Explain its principle of operation and applications in detail