2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

November 2008

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Applications
High-Fidelity Audio Output Amplifier General Purpose Power Amplifier

Features
High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts
1

TO-264

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings*

Symbol
BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current

Ta = 25C unless otherwise noted

Parameter

Ratings
230 230 5 15 1.5 150 1.04 - 50 ~ +150

Units
V V V A A W W/C C

Total Device Dissipation(TC=25C) Derate above 25C Junction and Storage Temperature

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics*
Symbol
RJC
* Device mounted on minimum pad size

Ta=25C unless otherwise noted

Parameter
Thermal Resistance, Junction to Case

Max.
0.83

Units
C/W

hFE Classification
Classification
hFE1

R
55 ~ 110

O
80 ~ 160

2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. B 1

www.fairchildsemi.com

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Electrical Characteristics* T =25C unless otherwise noted

a

Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Test Condition
IC=5mA, IE=0 IC=10mA, RBE= IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz

Min.
230 230 5

Typ.

Max.

Units
V V V

5.0 5.0 55 35 60 0.4 1.0 30 200 3.0 1.5 160

A A

V V MHz pF

* Pulse Test: Pulse Width=20s, Duty Cycle2%

Ordering Information
Part Number
2SC5200RTU 2SC5200OTU FJL4315RTU FJL4315OTU

Marking
C5200R C5200O J4315R J4315O

Package
TO-264 TO-264 TO-264 TO-264

Packing Method
TUBE TUBE TUBE TUBE

Remarks
hFE1 R grade hFE1 O grade hFE1 R grade hFE1 O grade

2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. B 2

www.fairchildsemi.com

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Typical Characteristics

16

IB=200mA
14

IC[A], COLLECTOR CURRENT

hFE, DC CURRENT GAIN

12 10 8

IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA

Vce=5V Tj=125 C 100

o

Tj=25 C

Tj=-25 C

IB = 40mA
4 2

10

IB = 0
0 0 2 4 6 8 10 12 14 16 18 20

1 1 10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain ( R grade )

10000

Vce(sat)[mV], SATURATION VOLTAGE

Tj=125 C

Tj=25 C

Ic=10Ib

Vce=5V

hFE, DC CURRENT GAIN

100 Tj=-25 C
o

1000

100

Tj=125 C

Tj=25 C

10

Tj=-25 C 10

1 1 10

1 0.1

10

Ic[A], COLLECTOR CURRENT

Ic[A], COLLECTOR CURRENT

Figure 3. DC current Gain ( O grade )

Figure 4. Collector-Emitter Saturation Voltage

12

10000

VCE = 5V
10

Vbe(sat)[mV], SATURATION VOLTAGE

Ic=10Ib

IC[A], COLLECTOR CURRENT

Tj=-25 C 1000

Tj=25 C

Tj=125 C

0 0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100 0.1

10

VBE[V], BASE-EMITTER VOLTAGE

Ic[A], COLLECTOR CURRENT

Figure 5. Base-Emitter On Voltage

Figure 6. Base-Emitter Saturation Voltage

2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. B 3

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2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Typical Characteristics
Transient Thermal Resistance, Rthjc[ C / W]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
100

IC MAX. (Pulsed*)

IC [A], COLLECTOR CURRENT

10ms*
10

IC MAX. (DC)

100ms* DC

0.1

*SINGLE NONREPETITIVE PULSE TC=25[ C]

0.01 1 10 100
o

Pulse duration [sec]

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Power Derating

Figure 8. Safe Operating Area

160 140

PC[W], POWER DISSIPATION

120 100 80 60 40 20 0 0 25 50
o

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 9. Power Derating

2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. B 4

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2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

Package Dimensions

TO-264
6.00 0.20

20.00 0.20
(4.00)

(8.30)

(8.30)

(2.00)

(1.00)

(9.00)

(9.00)

(11.00)

(0.50)
20.00 0.20 2.50 0.10

1.50 0.20

(R1

(7.00)

(7.00)

4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 0.10
+0.25

(2.00)

20.00 0.50

2 (R .00

0 3.3
0.2

.00

(1.50)

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.60 0.10

+0.25

2.80 0.30

5.00 0.20

3.50 0.20

(0.15)

(1.50)

(2.80)

Dimensions in Millimeters

2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. B 5

www.fairchildsemi.com

2SC5200/FJL4315 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. B

www.fairchildsemi.com 6