Lecture 3

PN Junction and MOS Electrostatics(I)

Semiconductor Electrostatics in Thermal Equilibrium

Outline
1. 2. Non-uniformly doped semiconductor in thermal equilibrium Relationships between potential, (x) and equilibrium carrier concentrations, po(x), no(x) Boltzmann relations & 60 mV Rule Quasi-neutral situation

3.

Reading Assignment: Howe and Sodini; Chapter 3, Sections 3.1-3.2

6.012 Microelectronic Devices and CircuitsFall 2004

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Summary of Key Concepts

It is possible to have an electric field inside a semiconductor in thermal equilibrium Non-uniform doping distribution In thermal equilibrium, there is a fundamental relationship between potential, (x) and the equilibrium carrier concentrations po(x) & no(x) Boltzmann relations (or 60 mV Rule) In a slowly varying doping profile, majority carrier concentration tracks well the doping concentration.

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1. Non-uniformly doped semiconductor in thermal equilibrium

Consider a piece of n-type Si in thermal equilibrium with non-uniform dopant distribution:

What is the resulting electron concentration in thermal equilibrium?

n-type lots of electrons, few holes focus on electrons

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OPTION 1: Every donor gives out one electron

n o (x) = N d (x)

Gradient of electron concentration net electron diffusion not in thermal equilibrium!

6.012 Microelectronic Devices and CircuitsFall 2004

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OPTION 2: electron concentration uniform in space

n o (x) = n ave f(x)

Think about space charge density:

(x) q[N d (x) n o (x)]

If Nd(x) no(x) (x) 0 electric field net electron drift not in thermal equilibrium!

6.012 Microelectronic Devices and CircuitsFall 2004

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OPTION 3:

Demand that Jn = 0 in thermal equilibrium at every x (Jp = 0 too)

Diffusion precisely balances Drift

J n (x) = J n

drift

(x) + Jn (x) = 0

diff

What is no(x) that satisfies this condition?

Let us examine the electrostatics implications of no(x) Nd(x)

6.012 Microelectronic Devices and CircuitsFall 2004

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Space charge density

(x) = q[Nd (x) n o (x)]

6.012 Microelectronic Devices and CircuitsFall 2004

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Electric Field
Gauss equation:

dE (x) = dx s
x

Integrate from x = 0:
E(x) E(0) =

(x )dx
1
s
0

6.012 Microelectronic Devices and CircuitsFall 2004

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Electrostatic Potential
d = E(x) dx
Integrate from x=0:

(x) (0) = E (x )dx

0

Need to select reference

(physics is in the potential difference, not in absolute value!);

Select (x = 0) = ref

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Given Nd(x), want to know no(x), (x), E(x) and (x) Equations that describe the problem:
J n = qn no E + qDn dE q = (Nd n o ) dx s dno =0 dx

Express them in terms of :

q n n o

d dn + qD n o = 0 dx dx

(1)
(2)

d 2 q 2 = (Nd no ) dx s
Plug (1) into (2):

d 2 (ln n o ) dx
2

q2 = (n o N d ) skT

One equation with one unknown. Given Nd(x), we can solve for no(x) and all the rest, but No analytical solutions for most situations!
6.012 Microelectronic Devices and CircuitsFall 2004 Lecture 3 10

2. Relationships between potential, (x) and equilibrium carrier concentrations, po(x), no(x) (Boltzmann relations)
From [1]:
1 dno d = Dn dx n o dx

Using Einstein relation:

q d d(ln no ) = kT dx dx
Integrate:
q ( ref ) = ln no ln n o,ref = ln no n o,ref kT

Then:

q((x ) ref ) n o (x ) = n o ,ref exp kT

6.012 Microelectronic Devices and CircuitsFall 2004 Lecture 3 11

What is the reference potential?

Any reference is good In 6.012, ref = 0 at no,ref = ni Then:

n o (x ) = n i eq (x ) kT
If we do same with holes (starting with Jh = 0 in thermal equilibrium, or simply using n0po = ni2 );

po = ni e q kT
We can re-write as:

n o (x ) kT (x ) = ln q ni
and

(x ) =

p (x ) kT ln o q ni
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6.012 Microelectronic Devices and CircuitsFall 2004

60 mV Rule
At room temperature for Si:

= (25mV ) ln
Or

no n = (25mV ) ln(10 ) log o ni ni

n o (x ) (x ) (60mV ) log ni
EXAMPLE 1:

n o = 10 cm

18

= (60mV ) 8 = 480 mV

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60 mV Rule: contd.
With holes:

po po = (25mV ) ln = (25mV ) ln (10) log ni ni

Or
(x ) (60mV ) log

p o (x ) ni

EXAMPLE 2:

n o = 10 cm

18

= (60mV) 8 = 480mV

p o = 10 cm

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Relationship between , no and po:

Note: cannot exceed 550 mV or be smaller than -550 mV. (Beyond this point different physics come into play.)

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Example 3: Compute potential difference in thermal equilibrium between region where no = 1017 cm-3 and po = 1015 cm-3.

(n o = 1017 cm3 ) = 60 7 = 420 mV (po = 1015 cm3) = 60 5 = 300 mV (n o = 1017 cm3 ) (po = 1015 cm3 ) = 720mV

Example 4: Compute potential difference in thermal equilibrium between region where no = 1020 cm-3 and po = 1016 cm-3.

(n o = 10 20 cm3 ) = max = 550 mV (po = 1016 cm3 ) = 60 6 = 360mV (n o = 10 20 cm3 ) (po = 1016 cm3 ) = 910 mV

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3. Quasi-neutral situation
Back to equation that gives no(x) in terms of Nd(x):
d 2 (ln n o ) dx 2
q2 = (n o N d ) skT

If Nd(x) changes slowly with x no(x) also changes 2 slowly d (ln2n o ) small
dx

Then:

n o (x) Nd (x)

no(x) tracks Nd(x) well minimum space charge semiconductor is quasi-neutral

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What did we learn today?

Summary of Key Concepts
It is possible to have an electric field inside a semiconductor in thermal equilibrium Non-uniform doping distribution. In thermal equilibrium, there is a fundamental relationship between the (x) and the equilibrium carrier concentrations no(x) & po(x) Boltzmann relations (or 60 mV Rule). In a slowly varying doping profile, majority carrier concentration tracks well the doping concentration. Equations to remember

=
Or

n p kT kT ln o = log o q ni q ni

(60mV ) log
6.012 Microelectronic Devices and CircuitsFall 2004

no p = (60mV ) log o ni ni
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